Infineon-Technologies-IGB20N60H3
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IGBT
HighꢀspeedꢀIGBTꢀinꢀTrenchꢀandꢀFieldstopꢀtechnology
IGB20N60H3
600Vꢀhighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IGB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
HighꢀspeedꢀIGBTꢀinꢀTrenchꢀandꢀFieldstopꢀtechnology
ꢀ
Features:
C
E
TRENCHSTOP
TM
ꢀtechnologyꢀoffering
•ꢀveryꢀlowꢀturn-offꢀenergy
•ꢀlowꢀV
CEsat
•ꢀlowꢀEMI
•ꢀmaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating,ꢀhalogen-freeꢀmouldꢀcompound,ꢀRoHS
compliant
G
•ꢀcompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
C
Applications:
•ꢀuninterruptibleꢀpowerꢀsupplies
•ꢀweldingꢀconverters
•ꢀconvertersꢀwithꢀhighꢀswitchingꢀfrequency
G
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
V
CE
I
C
V
CEsat
,ꢀ
T
vj
=25°C
T
vjmax
1.95V 175°C
Marking
Package
IGB20N60H3
600V
20A
G20H603
PG-TO263-3
2
Rev.ꢀ2.3,ꢀꢀ2014-03-11
IGB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
12
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
4
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3
Rev.ꢀ2.3,ꢀꢀ2014-03-11
IGB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
Maximumꢀratings
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀ
T
vj
ꢀ
≥
ꢀ25°C
V
CE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°C
T
C
ꢀ=ꢀ100°C
I
C
40.0
20.0
A
Pulsedꢀcollectorꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Cpuls
–
80.0
80.0
±20
A
A
V
Turn off safe operating area
V
CE
ꢀ
≤
ꢀ600V,ꢀ
T
vj
ꢀ
≤
ꢀ175°C,ꢀ
t
p
ꢀ=ꢀ1µs
Gate-emitter voltage
V
GE
Short circuit withstand time
V
GE
ꢀ=ꢀ15.0V,ꢀ
V
CC
ꢀ
≤
ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
ꢀ=ꢀ150°C
t
SC
µs
5
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ25°C
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ100°C
170.0
85.0
P
tot
W
Operating junction temperature
Storage temperature
T
vj
-40…+175
-55…+150
°C
°C
T
stg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
th(j-c)
R
th(j-a)
0.88
65
K/W
K/W
Thermal resistance, min. footprint
junction – ambient
Thermal resistance, 6cm² Cu on
PCB
R
th(j-a)
40
K/W
junction – ambient
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
ꢀ=ꢀ0V,ꢀ
I
C
ꢀ=ꢀ2.00mA
V
GE
ꢀ=ꢀ15.0V,ꢀ
I
C
ꢀ=ꢀ20.0A
T
vj
ꢀ=ꢀ25°C
Collector-emitter saturation voltage
V
CEsat
T
vj
ꢀ=ꢀ125°C
600
–
–
V
V
V
–
–
–
1.95 2.40
2.30
2.50
–
–
T
vj
ꢀ=ꢀ175°C
Gate-emitter threshold voltage
V
GE(th)
I
C
ꢀ=ꢀ0.29mA,ꢀ
V
CE
ꢀ=ꢀ
V
GE
4.1
5.1
5.7
V
CE
ꢀ=ꢀ600V,ꢀ
V
GE
ꢀ=ꢀ0V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Zero gate voltage collector current
I
CES
–
–
–
–
40.0 µA
1500.0
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
ꢀ=ꢀ0V,ꢀ
V
GE
ꢀ=ꢀ20V
V
CE
ꢀ=ꢀ20V,ꢀ
I
C
ꢀ=ꢀ20.0A
–
–
–
100
–
nA
S
10.9
4
Rev.ꢀ2.3,ꢀꢀ2014-03-11
IGB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
C
ies
–
–
–
1100
70
–
–
–
Output capacitance
C
oes
C
res
V
CE
ꢀ=ꢀ25V,ꢀ
V
GE
ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
32
V
CC
ꢀ=ꢀ480V,ꢀ
I
C
ꢀ=ꢀ20.0A,
V
GE
ꢀ=ꢀ15V
Gate charge
Q
G
–
–
120.0
120
–
–
nC
A
Short circuit collector current
Max. 1000 short circuits
Time between short circuits:
≥
1.0s
V
GE
ꢀ=ꢀ15.0V,ꢀ
V
CC
ꢀ
≤
ꢀ400V,
t
SC
ꢀ
≤
ꢀ5µs
T
vj
ꢀ=ꢀ150°C
I
C(SC)
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
16
20
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ20.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
r
G
ꢀ=ꢀ14.6
Ω
,ꢀ
L
σ
ꢀ=ꢀ75nH,
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode (IKP20N60H3) reverse
recovery.
Turn-off delay time
Fall time
194
11
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.45
0.24
0.69
mJ
mJ
mJ
Turn-off energy
Total switching energy
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
16
15
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ175°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ20.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
r
G
ꢀ=ꢀ14.6
Ω
,ꢀ
L
σ
ꢀ=ꢀ75nH,
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode (IKP20N60H3) reverse
recovery.
Turn-off delay time
Fall time
227
14
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.60
0.36
0.96
mJ
mJ
mJ
Turn-off energy
Total switching energy
5
Rev.ꢀ2.3,ꢀꢀ2014-03-11
IGB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
60
50
40
30
20
10
0
100
10
1
t
p
=1µs
10µs
50µs
T
C
=80°
T
C
=110°
T
C
=80°
100µs
200µs
500µs
DC
T
C
=110°
0.1
1
10
100
1000
1
10
100
1000
f
,ꢀSWITCHINGꢀFREQUENCYꢀ[kHz]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 1.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀswitching
Figure 2.
Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(
D
=0,ꢀ
T
C
=25°C,ꢀ
T
j
≤
175°C;ꢀ
V
GE
=15V)
frequency
(
T
j
≤
175°C,ꢀ
D
=0.5,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
r
G
=14,6
Ω
)
180
160
140
120
100
80
40
35
30
25
20
15
10
5
60
40
20
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 3.
Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 4.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(
T
j
≤
175°C)
(
V
GE
≥
15V,ꢀ
T
j
≤
175°C)
6
Rev.ꢀ2.3,ꢀꢀ2014-03-11
IGB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
V
GE
=20V
17V
15V
13V
11V
9V
V
GE
=20V
17V
15V
13V
11V
9V
7V
7V
5V
5V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 5.
Typicalꢀoutputꢀcharacteristic
(
T
j
=25°C)
Figure 6.
Typicalꢀoutputꢀcharacteristic
(
T
j
=175°C)
70
4.0
T
j
=25°C
T
j
=175°C
I
C
=10A
I
C
=20A
I
C
=40A
60
50
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
1.0
5
6
7
8
9
10
11
12
0
25
50
75
100
125
150
175
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7.
Typicalꢀtransferꢀcharacteristic
(
V
CE
=20V)
Figure 8.
Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(
V
GE
=15V)
7
Rev.ꢀ2.3,ꢀꢀ2014-03-11
IGB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
1000
100
10
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
100
10
0
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
45
50
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
r
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
Figure 9.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 10.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
r
G
=14,6
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
I
C
=20A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
6.0
typ.
min.
max.
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
t
d(off)
t
f
t
d(on)
t
r
100
10
1
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 11.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 12.
Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(ind.ꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,ꢀ
I
C
=20A,
r
G
=14,6
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(
I
C
=0.29mA)
8
Rev.ꢀ2.3,ꢀꢀ2014-03-11
IGB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
2.5
2.0
1.5
1.0
0.5
0.0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
E
off
E
on
E
ts
E
off
E
on
E
ts
4
8
12
16
20
24
28
32
36
40
5
10
15
20
25
30
35
40
45
50
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
r
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
Figure 13.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
Figure 14.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
functionꢀofꢀgateꢀresistor
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
r
G
=14,6
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
I
C
=20A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
1.0
0.8
0.6
0.4
0.2
0.0
1.50
1.25
1.00
0.75
0.50
0.25
0.00
E
off
E
on
E
ts
E
off
E
on
E
ts
25
50
75
100
125
150
175
200
250
300
350
400
450
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
Figure 16.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
GE
=15/0V,ꢀ
I
C
=20A,
r
G
=14,6
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(indꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,ꢀ
I
C
=20A,
r
G
=14,6
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
9
Rev.ꢀ2.3,ꢀꢀ2014-03-11
IGB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
16
14
12
10
8
120V
480V
1000
100
10
C
ies
C
oes
C
res
6
4
2
0
0
20
40
60
80
100
120
140
0
10
20
30
Q
GE
,ꢀGATEꢀCHARGEꢀ[nC]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 17.
Typicalꢀgateꢀcharge
(
I
C
=20A)
Figure 18.
Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(
V
GE
=0V,ꢀf=1MHz)
300
250
200
150
100
50
15
12
9
6
3
0
10
12
14
16
18
20
10
11
12
13
14
15
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 19.
Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 20.
Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(
V
CE
≤
400V,ꢀstartꢀat
T
j
=25°C)
(
V
CE
≤
400V,ꢀstartꢀatꢀ
T
j
≤
150°C)
10
Rev.ꢀ2.3,ꢀꢀ2014-03-11
IGB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
r
i
[K/W]: 0.07041042 0.3070851 0.3198984
0.1871538
τ
i
[s]: 9.6E-5
6.8E-4 0.01084623
0.06925485
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
Figure 21.
IGBTꢀtransientꢀthermalꢀimpedance
(
D
=
t
p
/T)
11
Rev.ꢀ2.3,ꢀꢀ2014-03-11
IGB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
PG-TO263-3
MIN
4.30
0.00
0.65
0.95
0.33
1.17
8.51
7.10
9.80
6.50
MAX
4.57
0.25
0.85
1.15
0.65
1.40
9.45
7.90
MIN
MAX
0.180
0.010
0.033
0.045
0.026
0.055
0.372
0.311
0.406
0.339
0.169
0.000
0.026
0.037
0.013
0.046
0.335
0.280
Z8B00003324
0
10.31
8.60
0.386
0.256
5
5
0
2.54
5.08
2
0.100
0.200
2
7.5mm
14.61
2.29
0.70
1.00
16.05
9.30
4.50
10.70
3.65
1.25
15.88
3.00
1.60
1.78
16.25
9.50
4.70
10.90
3.85
1.45
0.575
0.090
0.028
0.039
0.632
0.366
0.177
0.421
0.144
0.049
0.625
0.118
0.063
0.070
0.640
0.374
0.185
0.429
0.152
0.057
30-08-2007
01
12
Rev.ꢀ2.3,ꢀꢀ2014-03-11
IGB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
v
GE
(t)
90%
V
GE
a
b
a
b
t
i
C
(t)
90%
I
C
10%
I
C
90%
I
C
10%
I
C
t
v
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
v
GE
(t)
90%
V
GE
10%
V
GE
t
i
C
(t)
2%
I
C
t
v
CE
(t)
2%
V
CE
t
t
1
t
2
t
3
t
4
13
Rev.ꢀ2.3,ꢀꢀ2014-03-11
IGB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
RevisionꢀHistory
IGB20N60H3
Revision:ꢀ2014-03-11,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2010-07-26 Preliminary
datasheet
2013-12-09 New
value IRmax limit at 175°C
1.1
2.1
2.2
2.3
2014-02-26 Without
PB free logo
2014-03-11 Max
ratings Vce, Tvj
≥
25°C
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14
Rev.ꢀ2.3,ꢀꢀ2014-03-11
