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IGB50N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
HighꢀspeedꢀIGBTꢀinꢀTRENCHSTOP
TM
ꢀꢀ5ꢀtechnology
ꢀ
C
E
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀH5ꢀtechnologyꢀoffering
•ꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
topologies
•ꢀ650Vꢀbreakdownꢀvoltage
•ꢀLowꢀQ
G
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
G
C
PotentialꢀApplications:
•ꢀEnergyꢀGeneration
ꢀꢀꢀ-ꢀSolarꢀStringꢀInverter
ꢀꢀꢀ-ꢀSolarꢀMicroꢀInverter
•ꢀIndustrialꢀPowerꢀSupplies
ꢀꢀꢀ-ꢀIndustrialꢀSMPS
ꢀꢀꢀ-ꢀIndustrialꢀUPS
G
•ꢀMetalꢀTreatment
ꢀꢀꢀ-ꢀWelding
E
•ꢀEnergyꢀDistribution
ꢀꢀꢀ-ꢀEnergyꢀStorage
•ꢀInfrastructureꢀ–ꢀCharge
ꢀꢀꢀ-ꢀCharger
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
V
CE
I
C
V
CEsat
,ꢀ
T
vj
=25°C
T
vjmax
1.65V 175°C
Marking
G50EH5
Package
IGB50N65H5
650V
50A
PG-TO263-3
Datasheet
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.2
2018-01-11
IGB50N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
11
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
3
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Datasheet
2
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IGB50N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀ
T
vj
ꢀ
≥
ꢀ25°C
V
CE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
c
ꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
T
c
ꢀ=ꢀ100°C
I
C
80.0
53.7
A
Pulsedꢀcollectorꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Cpuls
150.0
150.0
A
A
Turn off safe operating area
V
CE
ꢀ
≤
ꢀ650V,ꢀ
T
vj
ꢀ
≤
ꢀ175°C,ꢀ
t
p
ꢀ=ꢀ1µs
–
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(
t
p
ꢀ
≤
ꢀ10µs,ꢀ
D
ꢀ<ꢀ0.010)
±20
±30
V
GE
P
tot
V
Powerꢀdissipationꢀ
T
c
ꢀ=ꢀ25°C
Powerꢀdissipationꢀ
T
c
ꢀ=ꢀ100°C
270.0
135.0
W
Operating junction temperature
Storage temperature
T
vj
-40…+175
-55…+150
°C
°C
T
stg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
R
th
ꢀCharacteristics
IGBT thermal resistance,
junction – case
R
th(j-c)
R
th(j-a)
–
–
–
–
0.55 K/W
65 K/W
Thermal resistance, min. footprint
junction – ambient
Thermal resistance, 6cm² Cu on
PCB
R
th(j-a)
–
–
40 K/W
junction – ambient
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
ꢀ=ꢀ0V,ꢀ
I
C
ꢀ=ꢀ0.20mA
V
GE
ꢀ=ꢀ15.0V,ꢀ
I
C
ꢀ=ꢀ50.0A
T
vj
ꢀ=ꢀ25°C
Collector-emitter saturation voltage
V
CEsat
T
vj
ꢀ=ꢀ125°C
650
–
–
V
V
–
–
–
1.65 2.10
1.85
1.95
–
–
T
vj
ꢀ=ꢀ175°C
Gate-emitter threshold voltage
V
GE(th)
I
C
ꢀ=ꢀ0.50mA,ꢀ
V
CE
ꢀ=ꢀ
V
GE
3.2
4.0
4.8
V
V
CE
ꢀ=ꢀ650V,ꢀ
V
GE
ꢀ=ꢀ0V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Zero gate voltage collector current
I
CES
–
–
–
50
–
µA
2000
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
ꢀ=ꢀ0V,ꢀ
V
GE
ꢀ=ꢀ20V
V
CE
ꢀ=ꢀ20V,ꢀ
I
C
ꢀ=ꢀ50.0A
–
–
–
100
–
nA
S
62.0
Datasheet
3
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IGB50N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
C
ies
–
–
–
3000
50
–
–
–
Output capacitance
C
oes
C
res
V
CE
ꢀ=ꢀ25V,ꢀ
V
GE
ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
11
V
CC
ꢀ=ꢀ520V,ꢀ
I
C
ꢀ=ꢀ50.0A,
V
GE
ꢀ=ꢀ15V
Gate charge
Q
G
L
E
–
–
120.0
7.0
–
–
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
23
31
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ50.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ12.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ12.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
173
40
ns
ns
Turn-on energy
E
on
E
off
E
ts
1.59
0.75
2.34
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
21
15
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ25.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ12.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ12.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
180
18
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
E
on
E
off
E
ts
0.52
0.18
0.70
mJ
mJ
mJ
Datasheet
4
Vꢀ2.2
2018-01-11
IGB50N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ150°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
23
29
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ150°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ50.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ12.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ12.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
190
33
ns
ns
Turn-on energy
E
on
E
off
E
ts
1.95
0.73
2.68
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
20
15
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ150°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ25.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ12.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ12.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
205
26
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
E
on
E
off
E
ts
0.75
0.27
1.02
mJ
mJ
mJ
Datasheet
5
Vꢀ2.2
2018-01-11
IGB50N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
270
240
210
180
150
120
90
90
80
70
60
50
40
30
20
10
0
60
30
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1.
Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(
T
vj
≤
175°C)
(
V
GE
≥
15V,ꢀ
T
vj
≤
175°C)
150
135
150
135
120
120
V
GE
=20V
V
GE
=20V
18V
18V
105
105
15V
15V
90
90
12V
12V
10V
8V
7V
6V
5V
10V
8V
7V
6V
5V
75
60
45
30
15
0
75
60
45
30
15
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=25°C)
Figure 4.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=150°C)
Datasheet
6
Vꢀ2.2
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IGB50N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
150
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
T
j
=25°C
T
j
=150°C
I
C
=12,5A
I
C
=25A
I
C
=50A
135
120
105
90
75
60
45
30
15
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
25
50
75
100
125
150
175
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5.
Typicalꢀtransferꢀcharacteristic
(
V
CE
=20V)
Figure 6.
Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(
V
GE
=15V)
1000
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
1000
100
10
1
100
10
1
0
30
60
90
120
150
0
5
10
15
20
25
30
35
40
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
r
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
Figure 7.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
r
G
=12
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
I
C
=50A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
7
Vꢀ2.2
2018-01-11
IGB50N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1000
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
t
d(off)
t
f
t
d(on)
t
r
typ.
100
10
1
25
50
75
100
125
150
175
0
25
50
75
100
125
150
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10.
Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=0/15V,
I
C
=50A,ꢀ
r
G
=12
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(
I
C
=0.5mA)
12
5.0
E
off
E
on
E
ts
E
off
E
on
E
ts
11
10
9
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
2
1
0
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
r
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
Figure 11.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
r
G
=12
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
I
C
=50A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure E)
Datasheet
8
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IGB50N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
3.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
E
off
E
on
E
ts
E
off
E
on
E
ts
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
200
250
300
350
400
450
500
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=0/15V,
I
C
=50A,ꢀ
r
G
=12
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
GE
=0/15V,
I
C
=50A,ꢀ
r
G
=12
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
16
130V
520V
C
ies
C
oes
1E+4
C
res
14
12
10
8
1000
100
10
1
6
4
2
0
0
20
40
60
80
100
120
0
5
10
15
20
25
30
Q
GE
,ꢀGATEꢀCHARGEꢀ[nC]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15.
Typicalꢀgateꢀcharge
(
I
C
=50A)
Figure 16.
Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(
V
GE
=0V,ꢀf=1MHz)
Datasheet
9
Vꢀ2.2
2018-01-11
IGB50N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
r
i
[K/W]: 0.1587018 0.2383852 0.1347618 0.01158283 1.8E-3
τ
i
[s]:
3.4E-4
2.8E-3
0.0136827 0.2164563
3.533918
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17.
IGBTꢀtransientꢀthermalꢀimpedance
(
D
=
t
p
/T)
Datasheet
10
Vꢀ2.2
2018-01-11
IGB50N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Package Drawing PG-TO263-3
MIN
4.30
0.00
0.65
0.95
0.33
1.17
8.51
7.10
9.80
6.50
MAX
4.57
0.25
0.85
1.15
0.65
1.40
9.45
7.90
10.31
8.60
MIN
MAX
0.180
0.010
0.033
0.045
0.026
0.055
0.372
0.311
0.406
0.339
0.169
0.000
0.026
0.037
0.013
0.046
0.335
0.280
0.386
0.256
Z8B00003324
0
5
5
0
2.54
5.08
2
0.100
0.200
2
7.5mm
14.61
2.29
0.70
1.00
16.05
9.30
4.50
10.70
3.65
1.25
15.88
3.00
1.60
1.78
16.25
9.50
4.70
10.90
3.85
1.45
0.575
0.090
0.028
0.039
0.632
0.366
0.177
0.421
0.144
0.049
0.625
0.118
0.063
0.070
0.640
0.374
0.185
0.429
0.152
0.057
30-08-2007
01
Datasheet
11
Vꢀ2.2
2018-01-11
IGB50N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Testing Conditions
V
GE
(t)
I,V
90%
V
GE
t
rr
=
t
a
+
t
b
dI
F
/dt
Q
rr
=
Q
a
+
Q
b
a
b
10%
V
GE
t
Q
a
Q
b
I
C
(t)
dI
90%
I
C
90%
I
C
10%
I
C
10%
I
C
Figure C.
Definition of diode switching
characteristics
t
V
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
Figure A.
V
GE
(t)
90%
V
GE
Figure D.
10%
V
GE
t
I
C
(t)
CC
2%
I
C
t
V
CE
(t)
Figure E.
Dynamic test circuit
Parasitic inductance L
,
parasitic capacitor C
,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t
2
t
4
E
=
V
CE
x
I
C
x d
t
E
=
V
CE
x
I
C
x d
t
off
on
2%
V
CE
t
1
t
3
t
t
1
t
2
t
3
t
4
Figure B.
Datasheet
12
Vꢀ2.2
2018-01-11
IGB50N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
RevisionꢀHistory
IGB50N65H5
Revision:ꢀ2018-01-11,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2.2
2017-05-19 Final
data sheet
2018-01-11 Remove
of Pb-free symbol and editorial changes.
Datasheet
13
Vꢀ2.2
2018-01-11
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Publishedꢀby
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