Infineon-Technologies-IGLD60R070D1
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IGLD60R070D1
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
Features
Enhancement mode transistor – Normally OFF switch
Ultra fast switching
No reverse-recovery charge
G
SK
Capable of reverse conduction
S
S
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for industrial applications according to JEDEC
Standards (JESD47 and JESD22)
D
D
D
D
1
S
S
K
G
8
Benefits
Gate
8
Improves system efficiency
Drain
1,2,3,4
7
Improves power density
Enables higher operating frequency
System cost reduction savings
Reduces EMI
Kelvin Source
Source
5,6
Applications
Industrial, telecom, datacenter SMPS based on the half-bridge topology
(half-bridge topologies for hard and soft switching such as Totem pole PFC,
high frequency LLC).
For other applications:
review CoolGaN
™
reliability white paper and contact
Infineon regional support
Table 1
Key Performance Parameters at T
j
= 25 °C
Parameter
V
DS,max
R
DS(on),max
Q
G,typ
Value
600
70
5.8
60
Unit
V
m
Ω
nC
A
I
D,pulse
Q
oss
@ 400 V
Q
rr
41
0
nC
nC
Table 2
Ordering Information
Type / Ordering Code
Package
Marking
Related links
IGLD60R070D1
PG-LSON-8-1
60R070D1
see Appendix A
Final Data Sheet
Please read the Important Notice and Warnings at the end of this document
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
Table of Contents
Final Data Sheet
2
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
1
Maximum ratings
at T
j
= 25 °C, unless otherwise specified.Continuous application of maximum ratings can deteriorate transistor
lifetime. For further information, contact your local Infineon sales office.
Table 3
Maximum ratings
Parameter
Symbol
Values
Unit
Note/Test Condition
V
GS
= 0 V
Min. Typ. Max.
V
DS,max
V
DS,bd
–
–
–
600
–
V
V
Drain source destructive breakdown
voltage
2
800
V
GS
= 0 V, I
DS
= 12.2 mA
Drain source voltage, pulsed
2
V
DS,pulse
–
–
–
750
650
V
V
T
j
= 25 °C;
V
GS
≤ 0 V;
≤1 hour
of total time
T
j
= 125 °C,
V
GS
≤ 0 V; ≤1 hour
of total time
Switching surge voltage, pulsed
2
V
DS,surge
–
750
V
DC bus voltage = 700 V;
turn
off V
DS,pulse
= 750 V; turn on
I
D,pulse
= 27 A; T
j
= 105 °C;
f ≤ 100 kHz, t ≤ 100 secs (10
million pulses)
Continuous current, drain source
I
D
–
–
–
–
15
60
A
A
T
C
= 25 °C;
3 4
Pulsed current, drain source
I
D,pulse
T
C
= 25 °C; I
G
= 26.1 mA;
T
C
= 125 °C;
I
G
= 26.1 mA;
–
–
35
A
4 5
Pulsed current, drain source
I
D,pulse
4 5 6
Gate current, continuous
I
G,avg
–
–
–
–
20
mA T
j
= -55 °C
to 150 °C;
Gate current, pulsed
4 6
I
G,pulse
2000
mA T
j
= -55 °C
to 150 °C;
t
PULSE
= 50 ns, f=100 kHz
Gate source voltage, continuous
6
Gate source voltage, pulsed
6
V
GS
-10
-25
–
–
–
–
V
V
T
j
= -55 °C
to 150 °C;
V
GS,pulse
T
j
= -55 °C to 150 °C;
t
PULSE
= 50 ns, f = 100 kHz;
open drain
Power dissipation
P
tot
T
j
–
–
–
–
114
150
150
W
T
C
= 25 °C
Operating temperature
Storage temperature
-55
°C
T
stg
°C Max
shelf life depends on
storage conditions.
-55
Drain-source voltage slew-rate
dV/dt
200
V/ns
1
All devices are 100% tested at I
DS
= 12.2 mA to assure V
DS
≥ 800 V
2
3
4
5
6
Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation
Limits derived from product characterization, parameter not measured during production
Ensure that average gate drive current, I
G,avg
is ≤ 20 mA. Please see figure 27 for I
G,avg
, I
G,pulse
and I
G
details
Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application
We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for
details
Final Data Sheet
3
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
2
Thermal characteristics
Table 4
Thermal characteristics
Parameter
Symbol
Values
Unit
Note/Test Condition
Min. Typ. Max.
Thermal resistance, junction-case
Reflow soldering temperature
R
thJC
T
sold
–
–
–
–
1.1
°C/W
245
°C MSL3
Final Data Sheet
4
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
3
Electrical characteristics
at T
j
= 25 °C, unless specified otherwise
Table 5
Static characteristics
Parameter
Symbol
Values
Unit
Note/Test Condition
Min. Typ.
Max.
Gate threshold voltage
V
GS(th)
0.9
0.7
1.2
1.0
1
20
60
1.6
1.4
100
–
V
I
DS
= 2.6 mA; V
DS
= 10 V; T
j
=25 °C
I
DS
= 2.6 mA; V
DS
= 10 V; T
j
=125 °C
Drain-Source leakage current
–
–
–
µA V
DS
= 600 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 600 V; V
GS
= 0 V; T
j
= 150 °C
I
DSS
Drain-Source leakage current at
–
μA
I
DSSapp
I
GSS
V
DS
= 400 V; V
GS
= 0 V; T
j
= 125 °C
-1
-1
–
–
–
–
–
mA V
DS
= 0 V; V
GS
= -10 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -10 V; T
j
= 125 °C
Drain-Source on-state resistance
Gate resistance
0.055 0.070
0.100
Ω
I
G
= 26.1 mA; I
D
= 8 A; T
j
= 25 °C
I
G
= 26.1 mA; I
D
= 8 A; T
j
= 150 °C
R
DS(on)
R
G,int
–
–
–
0.78
–
Ω
LCR impedance measurement;
f = f
res
; open drain;
Table 6
Dynamic characteristics
Parameter Symbol
Values
Unit
Note/Test Condition
Min. Typ.
Max.
V
GS
= 0 V; V
DS
= 400 V;
f = 1 MHz
380
72
–
–
–
–
–
Input capacitance
C
iss
–
–
–
–
–
pF
pF
pF
pF
pF
V
GS
= 0 V; V
DS
= 400 V;
f = 1 MHz
Output capacitance
C
oss
C
rss
Reverse Transfer capacitance
V
GS
= 0 V; V
DS
= 400 V;
f = 1 MHz
0.3
80
C
o(er)
C
o(tr)
V
DS
= 0 to 400 V
V
GS
= 0 V; V
DS
= 0 to 400 V;
Id = const
102.5
41
Output charge
Turn- on delay time
Turn- off delay time
Rise time
Q
oss
t
d(on)
t
d(off)
t
r
–
–
–
–
–
–
–
–
–
–
nC V
DS
= 0 to 400 V
15
15
ns
ns
ns
ns
9
13
t
f
Fall time
1
Parameter represents end of use leakage in applications
2
C
o(er)
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400 V
3
C
o(tr)
is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400 V
Final Data Sheet
5
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
Table 7
Gate charge characteristics
Parameter Symbol
Values
Unit
Note/Test Condition
Min. Typ.
Max.
I
GS
= 0 to 10 mA; V
DS
= 400 V;
I
D
= 8 A
5.8
–
Gate charge
Q
G
–
nC
Table 8
Reverse conduction characteristics
Parameter Symbol
Values
Min. Typ.
Max.
Unit
Note/Test Condition
2.2
–
2.5
60
–
Source-Drain reverse voltage
Pulsed current, reverse
V
SD
–
–
–
–
–
V
A
V
GS
= 0 V; I
SD
= 8 A
I
G
= 26.1 mA
I
S,pulse
Reverse recovery charge
Reverse recovery time
Q
rr
0
I
S
= 8 A, V
DS
= 400 V
nC
ns
A
t
rr
0
–
Peak reverse recovery current
I
rrm
0
–
1
Excluding Qoss
Final Data Sheet
6
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
4
Electrical characteristics diagrams
at T
j
= 25 °C, unless specified otherwise
Figure 1
Power dissipation
Figure 2
Max. transient thermal impedance
120
1
100
80
60
40
20
0
0.1
D=
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.01
0
20
40
60
80
100 120 140 160
1E-6
1E-4
1E-2
1E+0
1E+2
T
C
[
o
C]
t
p
[s]
P
tot
=f(T
c
)
Z
thJC
=f(t
p
, D)
Figure 3
Safe operating area
Figure 4
Safe operating area
100
100
tp = 20 ns
tp = 20 ns
tp = 10 μs
tp = 10 μs
10
1
10
1
tp = 100 μs
tp = 1 ms
DC
Limited by
R
DS
(on)
Limited by
R
DS
(on)
tp = 100 μs
tp = 1 ms
DC
0.1
0.01
0.1
0.01
1
10
100
1000
1
10
100
1000
V
DS
[V]
V
DS
[V]
I
D
=f(V
DS
);
T
C
= 25 °C
I
D
=f(V
DS
);
T
C
= 125 °C
Final Data Sheet
7
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
Figure 5
Figure 6
Repetitive safe operating area
1
70
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
tp ≤ 20ns
Limited by
R
DS(on)
tp ≤ 20ns
Limited by
R
DS(on)
0
100
200
300
400
500
600
0
100
200
300
400
500
600
V
DS
[V]
V
DS
[V]
Tc = 25 °C; T
j
≤ 150 °C
Tc = 125 °C; T
j
≤ 150 °C
Figure 7
Typ. output characteristics
Figure 8
Typ. output characteristics
90
90
I
G
=
26.1 mA
I
G
=
10 mA
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
I
G
=
2.6 mA
I
G
=
1 mA
I
G
=
26.1 mA
I
G
=
10 mA
I
G
=
0.26 mA
I
G
=
0.1 mA
I
G
=
2.6 mA
I
G
=
1 mA
I
G
=
0.26 mA
I
G
=
0.1 mA
0
2
4
6
8
10
0
2
4
6
8
10
V
DS
[V]
V
DS
[V]
I
D
=f(V
DS
,I
G
);
T
j
= 25 °C
I
D
=f(V
DS
,I
G
);
T
j
= 125 °C
1
Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application.
Final Data Sheet
8
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
Figure 9
Typ. Drain-source on-state resistance
Figure 10
Drain-source on-state resistance
140
120
100
80
200
180
160
140
120
100
80
I
G
=
0.26 mA
I
G
=
0.1 mA
I
G
=
1 mA
I
G
=
10 mA
V
GS
= 3 V
60
I
G
= 26.1 mA
I
G
=
2.6 mA
I
G
=
26.1 mA
40
20
0
-50
0
50
100
150
0
10
20
30
40
50
60
T
j
[
o
C]
I
D
[A]
R
DS(on)
=f(I
D
,I
G
);
T
j
= 125 °C
R
DS(on)
=f(T
j
);
I
D
= 8 A
Figure 11
Typ. gate characteristics forward
Figure 12
Typ. gate characteristics reverse
V
GS
(V)
500
450
400
350
-25
-20
-15
-10
-5
0
0
-50
-100
-150
-200
-250
-300
-350
300
250
200
150
100
50
125°C
25°C
-55°C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
(V)
I
GS
=f(V
GS
,T
j
);
open drain
I
GS
=f(V
GS
);
T
j
= 25 °C
Final Data Sheet
9
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
Figure 13
Typ. transfer characteristics
Figure 14
Typ. transfer characteristics
I I
=f(V );
V
DS
= 8 V; T = 25 °C
I I
=f(V );
V
DS
= 8 V ; T = 125 °C
,
,
D
G
GS
j
D
G
GS
j
Figure 15
Typ. channel reverse characteristics
Figure 16
Typ. channel reverse characteristics
V
DS
(V)
V
DS
(V)
-8
-7
-6
-5
-4
-3
-2
-1
0
-8
-6
-4
-2
0
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-5V
–
3V
-4V
-2V
-5V
-1V
0V
-1V
-4V
–
3V
-2V
0V
V
GS
V
GS
V
DS
=f(I
D
, V
GS
);
T
j
= 25 °C
V
DS
=f(I
D
, V
GS
);
T
j
= 125 °C
Final Data Sheet
10
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
Figure 17
Typ. channel reverse characteristics
Figure 18
Typ. channel reverse characteristics
60
60
50
40
30
20
10
0
+4V
50
40
30
20
10
0
0V
+4V
0V
0
2
4
6
8
0
2
4
6
8
10
V
SD
(V)
V
SD
(V)
I
D
=f(V
DS
, V
GS
);
T
j
= 25 °C
I
D
=f(V
DS
, V
GS
);
T
j
= 125 °C
Figure 19
Typ. gate charge
Figure 20
Typ. capacitances
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1,000.0
Ciss
Coss
100.0
10.0
1.0
Crss
0.1
0
100
200
300
400
500
0
1
2
3
4
5
6
Q (nC)
V
DS
(V)
V
GS
= f(Q
G
);
V
DCLINK
= 400 V; I
D
= 8 A
C
xSS
= f(V
DS
)
Final Data Sheet
11
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
Figure 21
Typ. output charge
Figure 22
Typ. Coss stored Energy
10
9
8
7
6
5
4
3
2
1
0
50
45
40
35
30
25
20
15
10
5
0
0
100
200
300
V
DS
(V)
400
500
0
100
200
300
400
500
V
DS
(V)
Q
OSS
= f(V
DS
)
E
OSS
= f(V
DS
)
Final Data Sheet
12
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
5
Test Circuits
Figure 23
Figure 24
D
R
SS
C
G
T1
R
ON
L
G
SK
R
OFF
+
S
D
I
D
R
SS
C
G
T2
R
ON
G
SK
R
OFF
S
I
D
= 8A, R
ON
= 10
Ω
; R
OFF
= 10
Ω; R
SS
= 820 Ω; C
G
= 2 nF;
V
DRV
= 12V
Figure 25
Reverse Channel Characteristics Test
Figure 26
Typical Reverse
Channel Recovery
D
R
SS
C
G
T1
R
ON
L
G
SK
R
OFF
+
S
D
I
D
R
SS
C
G
T2
R
ON
G
SK
R
OFF
S
I
D
= 8A, R
ON
= 10
Ω
; R
OFF
= 10
Ω; R
SS
= 820 Ω; C
G
= 2 nF;
V
DRV
= 12V
The recovery charge is Q
OSS
only, no additional Q
rr
Figure 27
Gate current switching waveform
I
G,pulse
I
G
I
G, avg
t
Final Data Sheet
13
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
6
Package Outlines
Figure 28
PG-LSON-8-1 Package Outline, dimensions (mm)
Final Data Sheet
14
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
7
Appendix A
Table 9
Related links
IFX CoolGaN
TM
applications information:
o
o
o
o
Final Data Sheet
15
Rev. 2.1
2020-01-16
IGLD60R070D1
600V CoolGaN
™
enhancement-mode Power Transistor
8
Revision History
Major changes since the last revision
Revision Date
Description of
changes
2.0
2.1
2018-10-12
2020-01-16
Final version release
Added V
DS,bd
, V
DS,pulse
, V
DS,surge
specifications in maximum ratings table of page3
Final Data Sheet
16
Rev. 2.1
2020-01-16
Trademarks of Infineon Technologies AG
µHVIC
™
, µIPM
™
, µPFC
™
, AU-ConvertIR
™
, AURIX
™
, C166
™
, CanPAK
™
, CIPOS
™
, CIPURSE
™
, CoolDP
™
, CoolGaN
™
, COOLiR
™
, CoolMOS
™
, CoolSET
™
, CoolSiC
™
,
DAVE
™
, DI-POL
™
, DirectFET
™
, DrBlade
™
, EasyPIM
™
, EconoBRIDGE
™
, EconoDUAL
™
, EconoPACK
™
, EconoPIM
™
, EiceDRIVER
™
, eupec
™
, FCOS
™
, GaNpowIR
™
,
HEXFET
™
, HITFET
™
, HybridPACK
™
, iMOTION
™
, IRAM
™
, ISOFACE
™
, IsoPACK
™
, LEDrivIR
™
, LITIX
™
, MIPAQ
™
, ModSTACK
™
, my-d
™
, NovalithIC
™
, OPTIGA
™
,
OptiMOS
™
, ORIGA
™
, PowIRaudio
™
, PowIRStage
™
, PrimePACK
™
, PrimeSTACK
™
, PROFET
™
, PRO-SIL
™
, RASIC
™
, REAL3
™
, SmartLEWIS
™
, SOLID FLASH
™
,
SPOC
™
, StrongIRFET
™
, SupIRBuck
™
, TEMPFET
™
, TRENCHSTOP
™
, TriCore
™
, UHVIC
™
, XHP
™
, XMC
™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no
For further information on the product, technology,
Edition 2020-01-16
event be regarded as a guarantee of conditions or
delivery terms and conditions and prices please
Published by
characteristics (“Beschaffenheitsgarantie”)
.
contact your nearest Infineon Technologies office
Infineon Technologies AG
81726 München, Germany
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
© 2020 Infineon Technologies AG.
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document?
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
Document reference
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The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
