Infineon-Technologies-IHW20N65R5
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ResonantꢀSwitchingꢀSeries
ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode
IHW20N65R5
Dataꢀsheet
IndustrialꢀPowerꢀControl
IHW20N65R5
ResonantꢀSwitchingꢀSeries
ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode
ꢀ
C
Features:
•ꢀPowerfulꢀmonolithicꢀreverse-conductingꢀdiodeꢀwithꢀlowꢀforward
voltage
•ꢀTRENCHSTOP
TM
ꢀtechnologyꢀoffers:
-ꢀveryꢀtightꢀparameterꢀdistribution
-ꢀhighꢀruggednessꢀandꢀstableꢀtemperatureꢀbehavior
-ꢀveryꢀlowꢀV
CEsat
ꢀandꢀlowꢀE
off
G
E
-ꢀeasyꢀparallelꢀswitchingꢀcapabilityꢀdueꢀtoꢀpositive
temperatureꢀcoefficientꢀinꢀV
CEsat
•ꢀLowꢀEMI
•ꢀQualifiedꢀaccordingꢀtoꢀJESD-022ꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
Applications:
•ꢀInductionꢀcooking
•ꢀInverterizedꢀmicrowaveꢀovens
•ꢀResonantꢀconverters
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
V
CE
I
C
V
CEsat
,ꢀ
T
vj
=25°C
T
vjmax
1.35V 175°C
Marking
Package
IHW20N65R5
650V
20A
H20ER5
PG-TO247-3
2
Rev.ꢀ2.3,ꢀꢀ2015-12-22
IHW20N65R5
ResonantꢀSwitchingꢀSeries
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
13
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
5
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3
Rev.ꢀ2.3,ꢀꢀ2015-12-22
IHW20N65R5
ResonantꢀSwitchingꢀSeries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀ
T
vj
ꢀ
≥
ꢀ25°C
V
CE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°C
T
C
ꢀ=ꢀ100°C
I
C
40.0
20.0
A
Pulsedꢀcollectorꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Cpuls
60.0
60.0
A
A
Turn off safe operating area
V
CE
ꢀ
≤
ꢀ650V,ꢀ
T
vj
ꢀ
≤
ꢀ175°C,ꢀ
t
p
ꢀ=ꢀ1µs
–
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°C
T
C
ꢀ=ꢀ100°C
I
F
19.0
10.0
A
Diodeꢀpulsedꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Fpuls
V
GE
60.0
±20
A
V
Gate-emitter voltage
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ25°C
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ100°C
150.0
75.0
P
tot
W
Operating junction temperature
Storage temperature
T
vj
-40…+175
-55…+150
°C
°C
T
stg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
th(j-c)
R
th(j-c)
R
th(j-a)
1.00
4.68
40
K/W
K/W
K/W
Diode thermal resistance,
junction – case
Thermal resistance
junction – ambient
4
Rev.ꢀ2.3,ꢀꢀ2015-12-22
IHW20N65R5
ResonantꢀSwitchingꢀSeries
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Unit
min. typ. max.
Parameter
Symbol Conditions
StaticꢀCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
ꢀ=ꢀ0V,ꢀ
I
C
ꢀ=ꢀ0.20mA
V
GE
ꢀ=ꢀ15.0V,ꢀ
I
C
ꢀ=ꢀ20.0A
650
–
–
V
V
Collector-emitter saturation voltage
V
CEsat
T
vj
ꢀ=ꢀ25°C
–
–
1.35 1.70
1.60
T
vj
ꢀ=ꢀ175°C
–
V
GE
ꢀ=ꢀ0V,ꢀ
I
F
ꢀ=ꢀ20.0A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Diode forward voltage
V
F
–
–
1.70 2.10
V
V
2.00
–
Gate-emitter threshold voltage
V
GE(th)
I
C
ꢀ=ꢀ0.20mA,ꢀ
V
CE
ꢀ=ꢀ
V
GE
3.2
4.0
4.8
V
CE
ꢀ=ꢀ650V,ꢀ
V
GE
ꢀ=ꢀ0V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Zero gate voltage collector current
I
CES
–
–
–
40
–
µA
600
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
ꢀ=ꢀ0V,ꢀ
V
GE
ꢀ=ꢀ20V
V
CE
ꢀ=ꢀ20V,ꢀ
I
C
ꢀ=ꢀ20.0A
–
–
–
100
–
nA
S
60.0
none
Integrated gate resistor
r
G
Ω
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
C
ies
–
–
–
2450
23
–
–
–
Output capacitance
C
oes
C
res
V
CE
ꢀ=ꢀ25V,ꢀ
V
GE
ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
10
V
CC
ꢀ=ꢀ480V,ꢀ
I
C
ꢀ=ꢀ20.0A,
V
GE
ꢀ=ꢀ15V
Gate charge
Q
G
L
E
–
–
97.0
13.0
–
–
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
23
16
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ20.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ23.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ23.0
Ω
,
L
σ
ꢀ=ꢀ35nH,ꢀ
C
σ
ꢀ=ꢀ32pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
250
7
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.54
0.16
0.70
mJ
mJ
mJ
Turn-off energy
Total switching energy
5
Rev.ꢀ2.3,ꢀꢀ2015-12-22
IHW20N65R5
ResonantꢀSwitchingꢀSeries
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
82
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ25°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ20.0A,
di
F
/dt
ꢀ=ꢀ1100A/µs
Q
rr
1.55
29.0
Diode peak reverse recovery current
I
rrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-2080
–
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
22
16
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ175°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ20.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ23.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ23.0
Ω
,
L
σ
ꢀ=ꢀ35nH,ꢀ
C
σ
ꢀ=ꢀ32pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
290
20
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.62
0.29
0.91
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
101
2.69
43.0
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ175°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ20.0A,
Q
rr
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ1100A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-1690
–
A/µs
6
Rev.ꢀ2.3,ꢀꢀ2015-12-22
IHW20N65R5
ResonantꢀSwitchingꢀSeries
100
10
1
160
140
120
100
80
not for linear use
60
40
20
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1.
Safeꢀoperatingꢀarea
Figure 2.
Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
(
D
=0,ꢀ
T
C
=25°C,ꢀ
T
vj
≤
175°C,ꢀ
V
GE
=15V,ꢀ
t
p
=1µs)
temperature
(
T
vj
≤
175°C)
40
35
30
25
20
15
10
5
60
V
GE
=20V
55
17V
50
15V
45
40
35
30
25
20
15
10
5
13V
11V
9V
8V
7V
6V
0
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=25°C)
(
V
GE
≥
15V,ꢀ
T
vj
≤
175°C)
7
Rev.ꢀ2.3,ꢀꢀ2015-12-22
IHW20N65R5
ResonantꢀSwitchingꢀSeries
60
55
50
45
40
35
30
25
20
15
10
5
60
V
GE
=20V
17V
15V
13V
11V
9V
T
vj
=25°C
T
vj
=175°C
50
40
30
20
10
0
8V
7V
6V
5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2
3
4
5
6
7
8
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=175°C)
Figure 6.
Typicalꢀtransferꢀcharacteristic
(
V
CE
=20V)
2.00
1000
I
C
=2,5A
I
C
=5A
I
C
=10A
I
C
=20A
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
t
d(off)
t
f
t
d(on)
t
r
100
10
1
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
40
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7.
Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
Figure 8.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(
V
GE
=15V)
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
R
Gon
=23
Ω
,ꢀ
R
Goff
=23
Ω
,ꢀdynamic
test circuit in Figure E)
8
Rev.ꢀ2.3,ꢀꢀ2015-12-22
IHW20N65R5
ResonantꢀSwitchingꢀSeries
1000
100
10
1000
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
100
10
1
1
10
20
30
40
50
60
70
80
25
50
75
100
125
150
175
R
G
,ꢀGATEꢀRESISTANCEꢀ[
Ω
]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
Figure 10.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistance
junctionꢀtemperature
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
I
C
=20A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=0/15V,
I
C
=20A,ꢀ
R
Gon
=23
Ω
,ꢀ
R
Goff
=23
Ω
,ꢀdynamicꢀtest
circuit in Figure E)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
typ.
min.
max.
E
off
E
on
E
ts
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11.
Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
Figure 12.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
functionꢀofꢀcollectorꢀcurrent
(
I
C
=0.2mA)
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
R
Gon
=23
Ω
,ꢀ
R
Goff
=23
Ω
,ꢀdynamic
test circuit in Figure E)
9
Rev.ꢀ2.3,ꢀꢀ2015-12-22
IHW20N65R5
ResonantꢀSwitchingꢀSeries
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
E
off
E
on
E
ts
E
off
E
on
E
ts
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
175
R
G
,ꢀGATEꢀRESISTANCEꢀ[
Ω
]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
Figure 14.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
I
C
=20A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=0/15V,
I
C
=20A,ꢀ
R
Gon
=23
Ω
,ꢀ
R
Goff
=23
Ω
,ꢀdynamicꢀtest
circuit in Figure E)
15
1E+4
1000
100
10
130V
520V
C
ies
C
oes
C
res
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1
0
10 20 30 40 50 60 70 80 90
100
0
3
6
9
12 15 18 21 24 27 30
Q
G
,ꢀGATEꢀCHARGEꢀ[nC]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15.
Typicalꢀgateꢀcharge
(
I
C
=20A)
Figure 16.
Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(
V
GE
=0V,ꢀf=1MHz)
10
Rev.ꢀ2.3,ꢀꢀ2015-12-22
IHW20N65R5
ResonantꢀSwitchingꢀSeries
1
1
D=0.5
D=0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.1
0.01
0.01
0.1
single pulse
single pulse
i:
1
2
3
4
5
i:
1
2
3
4
5
r
i
[K/W]: 5.0E-3 0.3855072 0.3892888 0.2350033
8.5E-3
r
i
[K/W]: 2.523557 1.451367 0.4791582 0.2141134
0.01191211
τ
i
[s]:
7.4E-6 3.4E-4
2.8E-3
0.01433068 0.208526
τ
i
[s]:
1.5E-4
5.9E-4
3.7E-3
0.01656028 0.1999705
0.01
0.01
1E-6
1E-5
1E-4
0.001
0.01
0.1
1E-6
1E-5
1E-4
0.001
0.01
0.1
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17.
IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
Figure 18.
Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(
D
=
t
p
/T)
(
D
=
t
p
/T)
200
3.5
T
vj
=25°C, I
F
= 20A
T
vj
=175°C, I
F
= 20A
T
vj
=25°C, I
F
= 20A
T
vj
=175°C, I
F
= 20A
175
150
125
100
75
3.0
2.5
2.0
1.5
1.0
0.5
50
25
0
0.0
500 600 700 800 900
1000 1100 1200 1300
500 600 700 800 900
1000 1100 1200 1300
dI
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
dI
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19.
Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
Figure 20.
Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
(
V
R
=400V)
11
Rev.ꢀ2.3,ꢀꢀ2015-12-22
IHW20N65R5
ResonantꢀSwitchingꢀSeries
50
45
40
35
30
25
20
15
10
5
0
-500
T
vj
=25°C, I
F
= 20A
T
vj
=175°C, I
F
= 20A
T
vj
=25°C, I
F
= 20A
T
vj
=175°C, I
F
= 20A
-1000
-1500
-2000
-2500
-3000
0
500 600 700 800 900
1000 1100 1200 1300
500 600 700 800 900
1000 1100 1200 1300
dI
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
dI
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21.
Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
Figure 22.
Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(
V
R
=400V)
60
2.50
T
vj
=25°C
T
vj
=175°C
I
F
=2,5A
I
F
=5A
I
F
=10A
I
F
=20A
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
25
50
75
100
125
150
175
V
F
,ꢀFORWARDꢀVOLTAGEꢀ[V]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 23.
Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
Figure 24.
Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
12
Rev.ꢀ2.3,ꢀꢀ2015-12-22
IHW20N65R5
ResonantꢀSwitchingꢀSeries
Package Drawing PG-TO247-3
13
Rev.ꢀ2.3,ꢀꢀ2015-12-22
IHW20N65R5
ResonantꢀSwitchingꢀSeries
Testing Conditions
V
GE
(t)
I,V
90%
V
GE
t
rr
=
t
a
+
t
b
dI
F
/dt
Q
rr
=
Q
a
+
Q
b
a
b
10%
V
GE
t
Q
a
Q
b
I
C
(t)
dI
90%
I
C
90%
I
C
10%
I
C
10%
I
C
Figure C.
Definition of diode switching
characteristics
t
V
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
Figure A.
V
GE
(t)
90%
V
GE
Figure D.
10%
V
GE
t
I
C
(t)
CC
2%
I
C
t
V
CE
(t)
Figure E.
Dynamic test circuit
Parasitic inductance L
,
parasitic capacitor C
,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t
2
t
4
E
=
V
CE
x
I
C
x d
t
E
=
V
CE
x
I
C
x d
t
off
on
2%
V
CE
t
1
t
3
t
t
1
t
2
t
3
t
4
Figure B.
14
Rev.ꢀ2.3,ꢀꢀ2015-12-22
IHW20N65R5
ResonantꢀSwitchingꢀSeries
RevisionꢀHistory
IHW20N65R5
Revision:ꢀ2015-12-22,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
–
1.1
1.2
2.1
2.2
2.3
2014-06-13 Preliminary
data sheet
2014-06-16
2014-09-12 Final
data sheet
2014-11-27 Update
of diode forward current values
2015-12-22 Minor
change Conditions Static Characteristic
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2015.
AllꢀRightsꢀReserved.
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(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany
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15
Rev.ꢀ2.3,ꢀꢀ2015-12-22
