Infineon-Technologies-IHW25N120E1

ResonantꢀSoft-SwitchingꢀSeries  

ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀDiodeꢀforꢀsoft-switching  

IHW25N120E1  

Dataꢀsheet  

IndustrialꢀPowerꢀControl  

IHW25N120E1  

ResonantꢀSoft-SwitchingꢀSeries  

ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode  

ꢀ

C

Features:  

•ꢀPowerfulꢀmonolithicꢀbodyꢀdiodeꢀwithꢀlowꢀforwardꢀvoltage  

designedꢀforꢀsoftꢀcommutationꢀonly  

•ꢀTRENCHSTOP

TM

ꢀtechnologyꢀapplicationsꢀoffers:  

-ꢀveryꢀtightꢀparameterꢀdistribution  

-ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior  

-ꢀlowꢀV

CEsat  

G

E

-ꢀeasyꢀparallelꢀswitchingꢀcapabilityꢀdueꢀtoꢀpositive  

temperatureꢀcoefficientꢀinꢀV

CEsat  

•ꢀLowꢀEMI  

•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications  

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  

•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  

Applications:  

•ꢀInductiveꢀcooking  

•ꢀInverterizedꢀmicrowaveꢀovens  

•ꢀResonantꢀconverters  

•ꢀSoftꢀswitchingꢀapplications  

G

C

E

KeyꢀPerformanceꢀandꢀPackageꢀParameters  

Type  

V

CE  

I

C  

V

CEsat

,ꢀ

T

vj

=25°C

T

vjmax  

1.5V 150°C  

Marking  

Package  

IHW25N120E1  

1200V  

25A  

H25ME1  

PG-TO247-3  

2

Rev.ꢀ2.1,ꢀꢀ2016-07-29  

IHW25N120E1  

ResonantꢀSoft-SwitchingꢀSeries  

TableꢀofꢀContents  

Description .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  

Table of Contents

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  

Maximum Ratings

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

4  

Thermal Resistance

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

4  

Electrical Characteristics

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  

Electrical Characteristics Diagrams

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

7  

Package Drawing

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

.

12  

Testing Conditions

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  

Revision History

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

.

1

4  

Disclaimer .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  

3

Rev.ꢀ2.1,ꢀꢀ2016-07-29  

IHW25N120E1  

ResonantꢀSoft-SwitchingꢀSeries  

MaximumꢀRatings  

Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.  

Parameter  

Symbol  

Value  

Unit  

Collector-emitterꢀvoltage,ꢀ

T

vj

ꢀ

≥

ꢀ25°C  

V

CE  

1200  

V

DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ

T

vjmax  

T

C

ꢀ=ꢀ25°C  

T

C

ꢀ=ꢀ100°C  

I

C  

50.0  

25.0  

A

Pulsedꢀcollectorꢀcurrent,ꢀ

t

p

ꢀlimitedꢀbyꢀ

T

vjmax  

Turnꢀoffꢀsafeꢀoperatingꢀareaꢀ

V

CE

ꢀ

≤

ꢀ1200V,ꢀ

T

vj

ꢀ

≤

ꢀ150°C

1)  

I

Cpuls  

75.0  

75.0  

A

A

–

Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ

T

vjmax  

T

C

ꢀ=ꢀ25°C  

T

C

ꢀ=ꢀ100°C  

I

F  

50.0  

25.0  

A

Diodeꢀpulsedꢀcurrent,ꢀ

t

p

ꢀlimitedꢀbyꢀ

T

vjmax  

I

Fpuls  

V

GE  

75.0  

A

V

Gate-emitter voltage  

TransientꢀGate-emitterꢀvoltageꢀ(

t

p

ꢀ

≤

ꢀ10µs,ꢀDꢀ<ꢀ0.010)  

±20  

±25  

Powerꢀdissipationꢀ

T

C

ꢀ=ꢀ25°C  

Powerꢀdissipationꢀ

T

C

ꢀ=ꢀ100°C  

231.0  

92.4  

P

tot  

W

Operating junction temperature  

Storage temperature  

T

vj  

-40…+150  

-55…+150  

°C  

°C  

T

stg  

Soldering temperature,  

wave soldering 1.6mm (0.063in.) from case for 10s  

°C  

260  

0.6  

Mounting torque, M3 screw  

Maximum of mounting processes: 3  

M

Nm  

ThermalꢀResistance  

Value  

min. typ. max.  

Parameter  

Symbol Conditions  

Unit  

R

th

ꢀCharacteristics  

IGBT thermal resistance,  

junction – case  

R

th(j-c)  

R

th(j-c)  

R

th(j-a)  

–

–

–

–

–

–

0.54 K/W  

0.54 K/W  

40 K/W  

Diode thermal resistance,  

junction – case  

Thermal resistance  

junction – ambient  

4

Rev.ꢀ2.1,ꢀꢀ2016-07-29  

IHW25N120E1  

ResonantꢀSoft-SwitchingꢀSeries  

ElectricalꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  

Value  

Unit  

min. typ. max.  

Parameter  

Symbol Conditions  

StaticꢀCharacteristic  

Collector-emitter breakdown voltage

V

(BR)CES

V

GE

ꢀ=ꢀ0V,ꢀ

I

C

ꢀ=ꢀ0.50mA  

V

GE

ꢀ=ꢀ15.0V,ꢀ

I

C

ꢀ=ꢀ25.0A  

T

vj

ꢀ=ꢀ25°C  

Collector-emitter saturation voltage

 

V

CEsat  

T

vj

ꢀ=ꢀ100°C  

1200  

–

–

V

V

–

–

–

1.50 2.00  

1.65  

1.75  

–

–

T

vj

ꢀ=ꢀ150°C  

V

GE

ꢀ=ꢀ0V,ꢀ

I

F

ꢀ=ꢀ25.0A  

T

vj

ꢀ=ꢀ25°C  

T

vj

ꢀ=ꢀ100°C  

T

vj

ꢀ=ꢀ150°C  

–

–

–

1.90 2.50  

Diode forward voltage  

V

F  

V

2.15  

2.35  

–

–

Gate-emitter threshold voltage  

V

GE(th)  

I

C

ꢀ=ꢀ0.80mA,ꢀ

V

CE

ꢀ=ꢀ

V

GE  

4.0  

5.8  

8.0  

V

V

CE

ꢀ=ꢀ1200V,ꢀ

V

GE

ꢀ=ꢀ0V  

T

vj

ꢀ=ꢀ25°C  

T

vj

ꢀ=ꢀ150°C  

Zero gate voltage collector current

 

I

CES  

–

–

–

100  

–

µA  

500  

Gate-emitter leakage current  

Transconductance  

I

GES  

g

fs  

V

CE

ꢀ=ꢀ0V,ꢀ

V

GE

ꢀ=ꢀ20V  

V

CE

ꢀ=ꢀ20V,ꢀ

I

C

ꢀ=ꢀ25.0A  

–

–

–

100  

–

nA  

S

23.0  

8.5  

Integrated gate resistor  

r

G  

Ω

ElectricalꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

DynamicꢀCharacteristic  

Input capacitance  

C

ies  

–

–

–

1300  

37  

–

–

–

Output capacitance  

C

oes  

C

res  

V

CE

ꢀ=ꢀ25V,ꢀ

V

GE

ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  

pF  

Reverse transfer capacitance  

31  

V

CC

ꢀ=ꢀ960V,ꢀ

I

C

ꢀ=ꢀ25.0A,  

V

GE

ꢀ=ꢀ15V  

Gate charge  

Q

G  

L

E  

–

–

147.0  

13.0  

–

–

nC  

nH  

Internal emitter inductance  

measured 5mm (0.197 in.) from  

case  

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

IGBTꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C  

Turn-off delay time  

t

d(off)  

t

f  

–

–

229  

–

–

ns  

ns  

T

vj

ꢀ=ꢀ25°C,  

V

CC

ꢀ=ꢀ105V,ꢀ

I

C

ꢀ=ꢀ25.0A,  

V

GE

ꢀ=ꢀ0.0/18.0V,  

R

G(o

ff

)

ꢀ=ꢀ10.2

Ω  

Fall time  

1020  

ꢀ

Energy losses include “tail”  

according Figure B. (Test circuit  

FigureꢀE,ꢀ

C

r

ꢀ=ꢀ300nF).  

Turn-off energy, soft switching  

E

off  

dv/dt

ꢀ=ꢀ83.0V/µs  

–

0.08  

–

mJ  

5

Rev.ꢀ2.1,ꢀꢀ2016-07-29  

IHW25N120E1  

ResonantꢀSoft-SwitchingꢀSeries  

Turn-off delay time  

Fall time  

t

d(off)  

t

f  

–

–

249  

850  

–

–

ns  

ns  

T

vj

ꢀ=ꢀ25°C,  

V

CC

ꢀ=ꢀ210V,ꢀ

I

C

ꢀ=ꢀ50.0A,  

V

GE

ꢀ=ꢀ0.0/18.0V,  

R

G(o

ff

)

ꢀ=ꢀ10.2

Ω  

ꢀ

Energy losses include “tail”  

according Figure B. (Test circuit  

FigureꢀE,ꢀ

C

r

ꢀ=ꢀ300nFꢀ).  

Turn-off energy, soft switching  

E

off  

dv/dt

ꢀ=ꢀ166.0V/µs  

–

0.24  

–

mJ  

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

IGBTꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ150°C  

Turn-off delay time  

t

d(off)  

t

f  

–

–

240  

–

–

ns  

ns  

T

vj

ꢀ=ꢀ150°C,  

V

CC

ꢀ=ꢀ105V,ꢀ

I

C

ꢀ=ꢀ25.0A,  

V

GE

ꢀ=ꢀ0.0/18.0V,  

R

G(o

ff

)

ꢀ=ꢀ10.2

Ω  

Fall time  

1764  

ꢀ

Energy losses include “tail”  

according Figure B. (Test circuit  

FigureꢀE,ꢀ

C

r

ꢀ=ꢀ300nF).  

Turn-off energy, soft switching  

E

off  

dv/dt

ꢀ=ꢀ83.0V/µs  

–

0.19  

–

mJ  

Turn-off delay time  

Fall time  

t

d(off)  

t

f  

–

–

253  

–

–

ns  

ns  

T

vj

ꢀ=ꢀ150°C,  

V

CC

ꢀ=ꢀ210V,ꢀ

I

C

ꢀ=ꢀ50.0A,  

V

GE

ꢀ=ꢀ0.0/18.0V,  

R

G(o

ff

)

ꢀ=ꢀ10.2

Ω  

1424  

ꢀ

Energy losses include “tail”  

according Figure B. (Test circuit  

FigureꢀE,ꢀ

C

r

ꢀ=ꢀ300nFꢀ).  

Turn-off energy, soft switching  

E

off  

dv/dt

ꢀ=ꢀ166.0V/µs  

–

0.52  

–

mJ  

6

Rev.ꢀ2.1,ꢀꢀ2016-07-29  

IHW25N120E1  

ResonantꢀSoft-SwitchingꢀSeries  

240  

210  

180  

150  

120  

90  

70  

60  

50  

40  

30  

20  

10  

0

60  

30  

0

25  

50  

75  

100  

125  

150  

25  

50  

75  

100  

125  

150  

T

C

,ꢀCASEꢀTEMPERATUREꢀ[°C]  

T

C

,ꢀCASEꢀTEMPERATUREꢀ[°C]  

Figure 1.

Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  

Figure 2.

Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  

temperature  

temperature  

(

T

vj

≤

150°C)  

(

V

GE

≥

15V,ꢀ

T

vj

≤

150°C)  

75  

75  

V

GE

=20V  

V

GE

=20V  

17V  

15V  

13V  

17V  

15V  

13V  

11V  

9V  

11V  

9V  

50  

25  

0

50  

25  

0

7V  

7V  

5V  

5V  

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

3.5  

4.0  

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

3.5  

4.0  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

Figure 3.

Typicalꢀoutputꢀcharacteristic  

(

T

vj

=25°C)  

Figure 4.

Typicalꢀoutputꢀcharacteristic  

(

T

vj

=150°C)  

7

Rev.ꢀ2.1,ꢀꢀ2016-07-29  

IHW25N120E1  

ResonantꢀSoft-SwitchingꢀSeries  

75  

50  

25  

0

3.5  

T

vj

=25°C  

T

vj

=150°C  

I

C

=12.5A  

I

C

=25A  

I

C

=50A  

3.0  

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

4

5

6

7

8

9

10  

11  

12  

25  

50  

75  

100  

125  

150  

V

GE

,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 5.

Typicalꢀtransferꢀcharacteristic  

(

V

CE

=20V)  

Figure 6.

Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas  

aꢀfunctionꢀofꢀjunctionꢀtemperature  

(

V

GE

=15V)  

1E+4  

1E+4  

t

d(off)  

t

f  

t

d(off)  

t

f  

1000  

100  

10  

1000  

100  

10  

0

10  

20  

30  

40  

50  

0

10  

20  

30  

40  

50  

I

C

,ꢀCOLLECTORꢀCURRENTꢀ[A]  

R

G

,ꢀGATEꢀRESISTORꢀ[

Ω

]  

Figure 7.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  

collectorꢀcurrent  

Figure 8.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate  

resistance  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

GE

=0/18V,  

R

G

=10.2

Ω

,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

GE

=0/18V,  

I

C

=25A,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)  

8

Rev.ꢀ2.1,ꢀꢀ2016-07-29  

IHW25N120E1  

ResonantꢀSoft-SwitchingꢀSeries  

1E+4  

1000  

100  

7.0  

t

d(off)  

t

f  

typ.  

6.5  

6.0  

5.5  

5.0  

4.5  

4.0  

3.5  

3.0  

10  

25  

50  

75  

100  

125  

150  

25  

50  

75  

100  

125  

150  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 9.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  

junctionꢀtemperature  

Figure 10.

Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction  

ofꢀjunctionꢀtemperature  

(inductiveꢀload,ꢀ

V

GE

=0/18V,ꢀ

I

C

=25A,  

R

G

=10.2

Ω

,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)  

(

I

C

=0.8mA)  

0.6  

0.30  

E

off

, T

vj

= 25°C  

E

off

, T

vj

= 100°C  

E

off

, T

vj

= 150°C  

E

off  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

0.25  

0.20  

0.15  

0.10  

0.05  

0.00  

0

10  

20  

30  

40  

50  

0

10  

20  

30  

40  

50  

I

C

,ꢀCOLLECTORꢀCURRENTꢀ[A]  

R

G

,ꢀGATEꢀRESISTORꢀ[

Ω

]  

Figure 11.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀcollectorꢀcurrent  

Figure 12.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀgateꢀresistance  

(inductiveꢀload,ꢀ

V

GE

=0/18V,ꢀ

R

G

=10.2

Ω

,  

Dynamic test circuit in Figure E)  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

GE

=0/18V,  

I

C

=25A,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)  

9

Rev.ꢀ2.1,ꢀꢀ2016-07-29  

IHW25N120E1  

ResonantꢀSoft-SwitchingꢀSeries  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

16  

E

off

, 12,5A  

E

off

, 25A  

E

off

, 50A  

V

CC

ꢀ=ꢀ240V  

V

CC

ꢀ=ꢀ960V  

14  

12  

10  

8

6

4

2

0

25  

50  

75  

100  

125  

150  

0

20  

40  

60  

80  

100 120 140 160  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Q

GE

,ꢀGATEꢀCHARGEꢀ[nC]  

Figure 13.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀjunctionꢀtemperature  

Figure 14.

Typicalꢀgateꢀcharge  

(

I

C

=25A)  

(inductiveꢀload,ꢀ

V

GE

=0/18V,ꢀ

I

C

=25A,  

R

G

=10.2

Ω

,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)  

1

C

ies  

C

oes  

C

res  

1000  

100  

10  

D=0.5  

0.1  

0.2  

0.1  

0.05  

0.02  

single pulse  

0.01  

0.001  

0

5

10  

15  

20  

25  

30  

1E-6  

1E-5  

1E-4  

0.001  

0.01  

0.1  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

t

p

,ꢀPULSEꢀWIDTHꢀ[s]  

Figure 15.

Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  

collector-emitterꢀvoltage  

Figure 16.

IGBTꢀ/ꢀDiodeꢀtransientꢀthermalꢀimpedance  

(

D

=

t

p

/T)  

(

V

GE

=0V,ꢀf=1MHz)  

10  

Rev.ꢀ2.1,ꢀꢀ2016-07-29  

IHW25N120E1  

ResonantꢀSoft-SwitchingꢀSeries  

75  

50  

25  

0

3.5  

T

vj

=25°C  

T

vj

=150°C  

I

F

=12.5A  

I

F

=25A  

I

F

=50A  

3.0  

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

3.5  

4.0  

25  

50  

75  

100  

125  

150  

V

F

,ꢀFORWARDꢀVOLTAGEꢀ[V]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 17.

Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction

Figure 18.

Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  

ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature  

11  

Rev.ꢀ2.1,ꢀꢀ2016-07-29  

IHW25N120E1  

ResonantꢀSoft-SwitchingꢀSeries  

Package Drawing PG-TO247-3  

12  

Rev.ꢀ2.1,ꢀꢀ2016-07-29  

IHW25N120E1  

ResonantꢀSoft-SwitchingꢀSeries  

Testing Conditions  

90%

V

GE  

V

G

E

(t)  

I,V  

t

V

C

E  

V

GE  

ꢁ

0

%

I

C  

I (t)  

I

C

E

 

ꢀ

2

%

I

C  

t

t

Figure C.

Typical switching behavior  

in resonant

application

s  

V

CE

(t)  

t

t

f  

t

t

d(off)  

Figure A.  

V

GE

(t)  

90%

V

GE  

Figure D.  

t

I

C

(t)  

R

CC  

1

%

I

 

C

t

t

2  

V

C

E

(t)  

Figure E.

 

Dynamic test circuit  

E

=

V

CE

x

I

C

x d

t  

off  

Resonant capacitor,  

C

r



t

1  

Damping resistor, R  



t

t

1  

t

2  

Figure B.  

13  

Rev.ꢀ2.1,ꢀꢀ2016-07-29  

IHW25N120E1  

ResonantꢀSoft-SwitchingꢀSeries  

RevisionꢀHistory  

IHW25N120E1  

Revision:ꢀ2016-07-29,ꢀRev.ꢀ2.1  

Previous Revision  

Revision Date  

Subjects (major changes since last revision)  

2.1  

2016-07-29 Final

 

data sheet  

Publishedꢀby  

InfineonꢀTechnologiesꢀAG  

81726ꢀMünchen,ꢀGermany  

©ꢀInfineonꢀTechnologiesꢀAGꢀ2016.  

AllꢀRightsꢀReserved.  

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(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany  

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liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird  

party.  

Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  

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customer’sꢀtechnicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀthe  

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InfineonꢀTechnologiesꢀofficeꢀ(www.infineon.com).  

PleaseꢀnoteꢀthatꢀthisꢀproductꢀisꢀnotꢀqualifiedꢀaccordingꢀtoꢀtheꢀAECꢀQ100ꢀorꢀAECꢀQ101ꢀdocumentsꢀofꢀtheꢀAutomotive  

ElectronicsꢀCouncil.  

Warnings  

Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion  

pleaseꢀcontactꢀyourꢀnearestꢀInfineonꢀTechnologiesꢀoffice.  

ExceptꢀasꢀotherwiseꢀexplicitlyꢀapprovedꢀbyꢀInfineonꢀTechnologiesꢀinꢀaꢀwrittenꢀdocumentꢀsignedꢀbyꢀauthorized  

representativesꢀofꢀInfineonꢀTechnologies,ꢀInfineonꢀTechnologies’ꢀproductsꢀmayꢀnotꢀbeꢀusedꢀinꢀanyꢀapplicationsꢀwhereꢀa  

failureꢀofꢀtheꢀproductꢀorꢀanyꢀconsequencesꢀofꢀtheꢀuseꢀthereofꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀresultꢀinꢀpersonalꢀinjury.  

14  

Rev.ꢀ2.1,ꢀꢀ2016-07-29