Infineon-Technologies-IHW30N110R3XKSA1
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ResonantꢀSwitchingꢀSeries
ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode
IHW30N110R3
Dataꢀsheet
IndustrialꢀPowerꢀControl
IHW30N110R3
ResonantꢀSwitchingꢀSeries
ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode
ꢀ
C
Features:
•ꢀPowerfulꢀmonolithicꢀbodyꢀdiodeꢀwithꢀlowꢀforwardꢀvoltage
designedꢀforꢀsoftꢀcommutationꢀonly
•ꢀVeryꢀtightꢀparameterꢀdistribution
•ꢀHighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior
•ꢀLowꢀV
CEsat
•ꢀEasyꢀparallelꢀswitchingꢀcapabilityꢀdueꢀtoꢀpositiveꢀtemperature
coefficientꢀinꢀV
CEsat
G
E
•ꢀLowꢀEMI
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
Applications:
G
•ꢀInductiveꢀcooking
C
E
•ꢀInverterizedꢀmicrowaveꢀovens
•ꢀResonantꢀconverters
•ꢀSoftꢀswitchingꢀapplications
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
V
CE
I
C
V
CEsat
,ꢀ
T
vj
=25°C
T
vjmax
1.55V 175°C
Marking
Package
IHW30N110R3
1100V
30A
H30R1103
PG-TO247-3
2
Rev.ꢀ2.1,ꢀꢀ2015-01-26
IHW30N110R3
ResonantꢀSwitchingꢀSeries
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
13
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
5
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3
Rev.ꢀ2.1,ꢀꢀ2015-01-26
IHW30N110R3
ResonantꢀSwitchingꢀSeries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CE
1100
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°C
T
C
ꢀ=ꢀ100°C
I
C
60.0
30.0
A
Pulsedꢀcollectorꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Cpuls
90.0
90.0
A
A
Turnꢀoffꢀsafeꢀoperatingꢀareaꢀ
V
CE
ꢀ
≤
ꢀ1100V,ꢀ
T
vj
ꢀ
≤
ꢀ175°C
–
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°C
T
C
ꢀ=ꢀ100°C
I
F
60.0
30.0
A
Diodeꢀpulsedꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Fpuls
V
GE
90.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(
t
p
ꢀ
≤
ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±25
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ25°C
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ100°C
333.0
166.0
P
tot
W
Operating junction temperature
Storage temperature
T
vj
-40…+175
-55…+175
°C
°C
T
stg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
th(j-c)
R
th(j-c)
R
th(j-a)
0.45
0.45
40
K/W
K/W
K/W
Diode thermal resistance,
junction – case
Thermal resistance
junction – ambient
4
Rev.ꢀ2.1,ꢀꢀ2015-01-26
IHW30N110R3
ResonantꢀSwitchingꢀSeries
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Unit
min. typ. max.
Parameter
Symbol Conditions
StaticꢀCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
ꢀ=ꢀ0V,ꢀ
I
C
ꢀ=ꢀ0.50mA
V
GE
ꢀ=ꢀ15.0V,ꢀ
I
C
ꢀ=ꢀ30.0A
T
vj
ꢀ=ꢀ25°C
Collector-emitter saturation voltage
V
CEsat
T
vj
ꢀ=ꢀ125°C
1100
–
–
V
V
–
–
–
1.55 1.75
1.85
2.00
–
–
T
vj
ꢀ=ꢀ175°C
V
GE
ꢀ=ꢀ0V,ꢀ
I
F
ꢀ=ꢀ30.0A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ125°C
T
vj
ꢀ=ꢀ175°C
–
–
–
1.35 1.55
Diode forward voltage
V
F
V
1.38
1.41
–
–
Gate-emitter threshold voltage
V
GE(th)
I
C
ꢀ=ꢀ0.70mA,ꢀ
V
CE
ꢀ=ꢀ
V
GE
5.1
5.8
6.4
V
V
CE
ꢀ=ꢀ1100V,ꢀ
V
GE
ꢀ=ꢀ0V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Zero gate voltage collector current
I
CES
–
–
–
–
5.0
2500.0
µA
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
ꢀ=ꢀ0V,ꢀ
V
GE
ꢀ=ꢀ20V
V
CE
ꢀ=ꢀ20V,ꢀ
I
C
ꢀ=ꢀ30.0A
–
–
–
100
–
nA
S
15.0
none
Integrated gate resistor
r
G
Ω
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
C
ies
–
–
–
1460
55
–
–
–
Output capacitance
C
oes
C
res
V
CE
ꢀ=ꢀ25V,ꢀ
V
GE
ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
45
V
CC
ꢀ=ꢀ880V,ꢀ
I
C
ꢀ=ꢀ30.0A,
V
GE
ꢀ=ꢀ15V
Gate charge
Q
G
L
E
–
–
180.0
13.0
–
–
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Turn-off delay time
Fall time
t
d(off)
t
f
–
–
–
350
16
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ600V,ꢀ
I
C
ꢀ=ꢀ30.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ15.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ15.0
Ω
,
L
σ
ꢀ=ꢀ80nH,ꢀ
C
σ
ꢀ=ꢀ39pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Turn-off energy
E
off
1.15
mJ
Energy losses include “tail” and
diode reverse recovery.
5
Rev.ꢀ2.1,ꢀꢀ2015-01-26
IHW30N110R3
ResonantꢀSwitchingꢀSeries
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Unit
min. typ. max.
Parameter
Symbol Conditions
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Turn-off delay time
Fall time
t
d(off)
t
f
–
–
–
410
60
–
–
–
ns
ns
T
vj
ꢀ=ꢀ175°C,
V
CC
ꢀ=ꢀ600V,ꢀ
I
C
ꢀ=ꢀ30.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ15.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ15.0
Ω
,
L
σ
ꢀ=ꢀ80nH,ꢀ
C
σ
ꢀ=ꢀ39pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Turn-off energy
E
off
1.80
mJ
Energy losses include “tail” and
diode reverse recovery.
6
Rev.ꢀ2.1,ꢀꢀ2015-01-26
IHW30N110R3
ResonantꢀSwitchingꢀSeries
100
90
80
70
60
50
40
30
20
10
0
100
t
p
=1µs
10
T
C
=80°
10µs
20µs
T
C
=110°
50µs
500µs
1
5ms
DC
0.1
1
10
100
1000
1
10
100
1000
f
,ꢀSWITCHINGꢀFREQUENCYꢀ[kHz]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 1.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀswitching
Figure 2.
Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(
D
=0,ꢀ
T
C
=25°C,ꢀ
T
j
≤
175°C;ꢀ
V
GE
=15V)
frequency
(
T
j
≤
175°C,ꢀ
D
=0.5,ꢀ
V
CE
=600V,ꢀ
V
GE
=0/15V,
R
G
=15
Ω
)
350
300
250
200
150
100
50
60
40
20
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 3.
Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 4.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(
T
j
≤
175°C)
(
V
GE
≥
15V,ꢀ
T
j
≤
175°C)
7
Rev.ꢀ2.1,ꢀꢀ2015-01-26
IHW30N110R3
ResonantꢀSwitchingꢀSeries
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
V
GE
=20V
17V
15V
13V
11V
9V
V
GE
=20V
17V
15V
13V
11V
9V
7V
7V
5V
5V
0
1
2
3
0
1
2
3
4
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 5.
Typicalꢀoutputꢀcharacteristic
(
T
j
=25°C)
Figure 6.
Typicalꢀoutputꢀcharacteristic
(
T
j
=175°C)
90
25°C
T
j
=175°C
I
C
=15A
I
C
=30A
I
C
=60A
80
3
2
1
70
60
50
40
30
20
10
0
4
6
8
10
12
14
25
50
75
100
125
150
175
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7.
Typicalꢀtransferꢀcharacteristic
(
V
CE
=20V)
Figure 8.
Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(
V
GE
=15V)
8
Rev.ꢀ2.1,ꢀꢀ2015-01-26
IHW30N110R3
ResonantꢀSwitchingꢀSeries
t
d(off)
t
f
t
d(off)
t
f
1000
100
10
1000
100
10
10
20
30
40
50
60
10
20
30
40
50
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
R
G
,ꢀGATEꢀRESISTANCEꢀ[
Ω
]
Figure 9.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 10.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistance
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=600V,ꢀ
V
GE
=0/15V,
R
G(on)
=15
Ω
,ꢀ
R
G(off)
=15
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=600V,ꢀ
V
GE
=0/15V,
I
C
=30A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
8
t
d(off)
typ.
t
f
min.
max.
1000
7
6
5
4
3
2
100
10
1
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 11.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 12.
Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(ind.ꢀload,ꢀ
V
CE
=600V,ꢀ
V
GE
=0/15V,ꢀ
I
C
=30A,
R
G(on)
=15
Ω
,ꢀ
R
G(off)
=15
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(
I
C
=0.7mA)
9
Rev.ꢀ2.1,ꢀꢀ2015-01-26
IHW30N110R3
ResonantꢀSwitchingꢀSeries
4
3
2
1
0
3
E
off
E
off
2
1
0
0
15
30
45
60
10
20
30
40
50
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
R
G
,ꢀGATEꢀRESISTANCEꢀ[
Ω
]
Figure 13.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
Figure 14.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
functionꢀofꢀgateꢀresistance
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=600V,ꢀ
V
GE
=0/15V,
R
G(on)
=15
Ω
,ꢀ
R
G(off)
=15
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=600V,ꢀ
V
GE
=0/15V,
test circuit in Fig. E)
2
1
0
2.2
2.0
1.8
1.6
1.4
1.2
E
off
E
off
25
50
75
100
125
150
175
300
400
500
600
700
800
900
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
Figure 16.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(indꢀload,ꢀ
V
CE
=600V,ꢀ
V
GE
=0/15V,ꢀ
I
C
=30A,
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
GE
=0/15V,ꢀ
I
C
=30A,
R
G(on)
=15
Ω
,ꢀ
R
G(off)
=15
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
R
G(on)
=15
Ω
,ꢀ
R
G(off)
=15
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
10
Rev.ꢀ2.1,ꢀꢀ2015-01-26
IHW30N110R3
ResonantꢀSwitchingꢀSeries
16
14
12
10
8
220V
880V
1000
100
10
C
ies
C
oes
C
res
6
4
2
0
0
40
80
120
160
200
0
10
20
30
Q
GE
,ꢀGATEꢀCHARGEꢀ[nC]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 17.
Typicalꢀgateꢀcharge
(
I
C
=30A)
Figure 18.
Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(
V
GE
=0V,ꢀf=1MHz)
1
1
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
r
i
[K/W]: 4.5E-3 0.1058 0.152
0.1827
τ
i
[s]: 9.8E-6
3.2E-4 2.9E-3 0.01487178
1
2
3
4
i:
r
i
[K/W]: 4.5E-3 0.1058 0.152
0.1827
τ
i
[s]: 9.8E-6
3.2E-4 2.9E-3 0.01487178
1
2
3
4
0.001
1E-6
0.001
1E-5
1E-4
0.001
0.01
0.1
1
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19.
IGBTꢀtransientꢀthermalꢀimpedance
(
D
=
t
p
/T)
Figure 20.
Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(
D
=
t
p
/T)
11
Rev.ꢀ2.1,ꢀꢀ2015-01-26
IHW30N110R3
ResonantꢀSwitchingꢀSeries
60
50
40
30
20
10
0
2
T
j
=25°C
T
j
=175°C
I
F
=15A
I
F
=30A
I
F
=60A
1
0
1
2
25
50
75
100
125
150
175
V
F
,ꢀFORWARDꢀVOLTAGEꢀ[V]
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 21.
Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
Figure 22.
Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
12
Rev.ꢀ2.1,ꢀꢀ2015-01-26
IHW30N110R3
ResonantꢀSwitchingꢀSeries
PG-TO247-3
13
Rev.ꢀ2.1,ꢀꢀ2015-01-26
IHW30N110R3
ResonantꢀSwitchingꢀSeries
V
GE
(t)
I,V
90%
V
GE
t
rr
=
t
a
+
t
b
Q
rr
=
Q
a
+
Q
b
dI
F
/dt
a
b
10%
V
GE
t
Q
a
Q
b
I
C
(t)
dI
90%
I
C
10%
I
C
90%
I
C
10%
I
C
Figure C.
Definition of diode switching
t
characteristics
V
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
Figure A.
V
GE
(t)
90%
V
GE
Figure D.
10%
V
GE
t
I
C
(t)
CC
2%
I
C
t
V
CE
(t)
Figure E.
Dynamic test circuit
Parasitic inductance L
,
s
parasitic capacitor C
,
s
relief capacitor C ,
r
t
2
t
4
(only for ZVT switching)
E
=
V
CE
x
I
C
x d
t
E
=
V
CE
x
I
C
x d
t
off
on
2%
V
CE
t
1
t
3
t
t
1
t
2
t
3
t
4
Figure B.
14
Rev.ꢀ2.1,ꢀꢀ2015-01-26
IHW30N110R3
Resonant Switching Series
Revision History
IHW30N110R3
Revision: 2015-01-26, Rev. 2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
–
1.1
1.2
1.3
2.1
2009-12-01
2011-01-21 Package
drawing Rev. 05
2013-02-12 Layout
change
2015-01-26 Final
data sheet
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15
Rev. 2.1,
2015-01-26
