Infineon-Technologies-IKA10N60T
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IKA10N60T
TrenchStop Series
Low Loss DuoPack :
IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
•
•
•
•
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time – 5
µ
s
Designed for :
G
E
– Variable Speed Drive for washing machines, air
conditioners and induction cooking
– Uninterrupted Power Supply
•
Trench and Fieldstop technology for 600 V applications offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– very high switching speed
P-TO-220-3-31
(TO-220 FullPak)
– low V
CE(sat)
•
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
•
•
•
•
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
T
j,max
Marking Code
Package
Ordering Code
IKA10N60T
600V
10A
1.5V
K10T60
TO-220-FP Q67040S4683
175
°
C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25
°
C
V
C
E
I
C
600
V
A
20
10
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
I
C
puls
–
30
30
V
CE
≤
400V,
T
j
≤
150
°
C
Diode forward current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
I
F
20
10
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
I
F
puls
V
G
E
t
S
C
30
±
20
5
V
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150
°
C
Power dissipation,
T
C
= 25
°
C
Operating junction temperature
Storage temperature
µ
s
P
t
ot
T
j
30
W
-40…+175
-55…+175
°
C
T
s
tg
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2
Oct-04
Power Semiconductors
IKA10N60T
TrenchStop Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
t
hJC
R
t
hJCD
R
t
hJA
TO-220 FullPak
TO-220 FullPak
TO-220 FullPak
5
K/W
5.8
80
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
–
Static Characteristic
Collector-emitter breakdown voltage
V
(
BR)C ES
V
G
E
=
0V,
I
C
=
0.2mA
600
–
V
Collector-emitter saturation voltage
V
C
E
(sa t)
V
G
E
=
1
5V,
I
C
=
10A
T
j
=
25
°
C
–
–
1.5
1.8
2.05
T
j
=
175
°
C
Diode forward voltage
V
F
V
G
E
=
0V,
I
F
=
10A
T
j
=
25
°
C
–
–
1.6
1.6
2.05
–
T
j
=
175
°
C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
G
E(th )
I
C
E
S
I
C
=
0.3mA,
V
C
E
=
V
G
E
4.1
4.6
5.7
V
C
E
=
600V
,
µA
V
G
E
=
0V
T
j
=
25
°
C
T
j
=
175
°
C
–
–
–
–
–
–
–
6
40
1000
100
–
Gate-emitter leakage current
Transconductance
I
G
ES
g
f
s
V
C
E
=
0V,
V
G
E
=
20V
V
C
E
=
20V,
I
C
=
15A
nA
S
Integrated gate resistor
R
G
int
none
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
i
ss
V
C
E
=
25V,
V
G
E
=
0V,
f
=
1MHz
V
C
C
=
480V,
I
C
=
10A
V
G
E
=
15V
–
–
–
–
551
40
17
–
–
–
–
pF
C
o
ss
C
r
ss
Q
G
a te
62
nC
nH
A
Internal emitter inductance
L
E
TO-220-3-31
–
–
7
–
–
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C
(
SC)
100
V
G
E
=
15V,
t
S
C
≤
5
µ
s
V
C
C
=
4
00V,
T
j
=
2
5
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2
Oct-04
Power Semiconductors
IKA10N60T
TrenchStop Series
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
t
d
(
on)
t
r
t
d
(
off)
t
f
–
–
–
–
–
–
–
12
8
215
38
0.16
0.27
0.43
–
–
–
–
–
–
–
ns
T
j
=
25
°
C
,
V
C
C
=
400V,
I
C
=
10A,
V
G
E
=
0/15V,
R
G
=
23
Ω
,
L
σ
2
)
=
60nH,
C
σ
2
)
=
40pF
E
o
n
E
o
f
f
E
t
s
mJ
Energy losses include
“tail” and diode
reverse recovery.
t
r
r
–
–
–
–
115
0.38
10
–
–
–
–
ns
µC
A
T
j
=
25
°
C
,
V
R
=
400V,
I
F
=
10A,
di
F
/
dt
=
880A/
µ
s
Q
r
r
Diode peak reverse recovery current
I
r
rm
Diode peak rate of fall of reverse
di
r
r
/
dt
680
A/
µ
s
recovery current during
t
b
Switching Characteristic, Inductive Load,
at
T
j
=175
°
C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
t
d
(
on)
t
r
t
d
(
off)
t
f
–
–
–
–
–
–
–
10
11
233
63
0.26
0.35
0.61
–
–
–
–
–
–
–
ns
T
j
=
175
°
C
,
V
C
C
=
400V,
I
C
=
10A,
V
G
E
=
0/15V,
R
G
=
2
3
Ω
L
σ
1
)
=
60nH,
C
σ
1
)
=
40pF
E
o
n
E
o
f
f
E
t
s
mJ
Energy losses include
“tail” and diode
reverse recovery.
t
r
r
–
–
–
–
200
0.92
13
–
–
–
–
ns
µC
A
T
j
=
175
°
C
V
R
=
400V,
I
F
=
10A,
di
F
/
dt
=
880A/
µ
s
Q
r
r
Diode peak reverse recovery current
I
r
rm
Diode peak rate of fall of reverse
di
r
r
/
dt
390
A/
µ
s
recovery current during
t
b
2)
Leakage inductance
L
σ
a
nd
S
tray
capacity
C
σ
due to dynamic test circuit in Figure E.
1)
Leakage inductance
L
σ
a
nd
S
tray
capacity
C
σ
due to dynamic test circuit in Figure E.
3
Rev. 2
Oct-04
Power Semiconductors
IKA10N60T
TrenchStop Series
t
p
=1µs
T
C
=80°C
T
C
=110°C
30A
25A
20A
15A
10A
5A
10A
1A
20µs
50µs
500µs
5ms
I
c
100ms
I
c
0,1A
1V
DC
0A
10Hz
100Hz
1kHz
10kHz 100kHz
10V
100V
1000V
f
,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 1.
Collector current as a function of
Figure 2.
Safe operating area
(
D =
0,
T
C
= 25
°
C,
T
j
≤
175
°
C;
V
GE
=15V)
switching frequency
(
T
j
≤
175
°
C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 23
Ω
)
30W
25W
20W
15W
10W
5W
10A
8A
6A
4A
2A
0A
0W
25°C
75°C
125°C
25°C
50°C
75°C 100°C
125°C 150°C
T
C
,
CASE TEMPERATURE
Figure 3.
Power dissipation as a function of
case temperature
T
C
,
CASE TEMPERATURE
Figure 4.
Collector current as a function of
case temperature
(
T
j
≤
175
°
C)
(
V
GE
≥
15V,
T
j
≤
175
°
C)
4
Rev. 2
Oct-04
Power Semiconductors
IKA10N60T
TrenchStop Series
30A
25A
20A
15A
10A
5A
30A
25A
20A
15A
10A
5A
V
G
E
=20V
V
G
E
=20V
15V
15V
12V
10V
8V
12V
10V
8V
6V
6V
0A
0A
0V
1V
2V
3V
4V
0V
1V
2V
3V
4V
5V
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 5.
Typical output characteristic
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 6.
Typical output characteristic
(
T
j
= 25°C)
(
T
j
= 175°C)
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
25A
20A
15A
10A
I
C
=20A
I
C
=10A
I
C
=5A
T
J
=
175°C
5A
0A
25°C
-50°C
0°C
50°C
100°C
150°C
0V
2V
4V
6V
8V
10V
V
GE
,
GATE-EMITTER VOLTAGE
Figure 7.
Typical transfer characteristic
T
J
,
JUNCTION TEMPERATURE
Figure 8.
Typical collector-emitter
(V
CE
=20V)
saturation voltage as a function of
junction temperature
(
V
GE
= 15V)
5
Rev. 2
Oct-04
Power Semiconductors
IKA10N60T
TrenchStop Series
t
d(off)
t
d(off)
100ns
10ns
1ns
100ns
t
f
t
f
t
d
(on)
t
d(on)
10ns
t
r
t
r
1ns
0A
5A
10A
15A
20A
10Ω
20Ω
30Ω
40Ω
50Ω
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 10. Typical switching times as a
Figure 9.
Typical switching times as a
function of collector current
(inductive load,
T
J
=175°C,
function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 23
ꢀ
,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 10A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
7V
6V
5V
4V
3V
2V
1V
0V
t
d
(off)
max.
typ.
100ns
10ns
1ns
t
f
min.
t
d
(on)
t
r
25°C
50°C
75°C 100°C
125°C 150°C
-50°C
0°C
50°C
100°C
150°C
T
J
,
JUNCTION TEMPERATURE
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
I
C
= 0.3mA)
V
GE
= 0/15V,
I
C
= 10A,
R
G
=23
ꢀ
,
Dynamic test circuit in Figure E)
6
Rev. 2
Oct-04
Power Semiconductors
IKA10N60T
TrenchStop Series
*)
E
on
and
E
ts
include losses
due to diode recovery
*)
E
on
a
nd
E
ts
include losses
E
ts
*
E
ts
*
due to diode recovery
0,8 mJ
0,6 mJ
0,4 mJ
0,2 mJ
0,0 mJ
1,0mJ
0,8mJ
0,6mJ
0,4mJ
0,2mJ
0,0mJ
E
off
E
off
E
on
*
E
on
*
10Ω
20Ω
30Ω
40Ω
50Ω
0A
5A
10A
15A
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 23
ꢀ
,
Dynamic test circuit in Figure E)
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 10A,
Dynamic test circuit in Figure E)
*)
E
on
and
E
ts
include losses
*)
E
on
and
E
ts
include losses
due to diode recovery
0,6mJ
0,5mJ
0,4mJ
0,3mJ
0,2mJ
0,1mJ
0,0mJ
due to diode recovery
0,8mJ
E
ts
*
0,6mJ
E
ts
*
E
off
0,4mJ
E
off
0,2mJ
E
on
*
E
on
*
0,0mJ
50°C
100°C
150°C
300V 350V 400V 450V 500V 550V
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
V
CE
= 400V,
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 10A,
R
G
= 23
ꢀ
,
V
GE
= 0/15V,
I
C
= 10A,
R
G
= 23
ꢀ
,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
7
Rev. 2
Oct-04
Power Semiconductors
IKA10N60T
TrenchStop Series
1nF
C
iss
15V
10V
5V
120V
480V
100pF
C
oss
C
rss
10pF
0V
0V
10V
20V
0nC
20nC
40nC
60nC
Q
GE
,
GATE CHARGE
Figure 17. Typical gate charge
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
(
I
C
=10 A)
of collector-emitter voltage
(
V
GE
=0V,
f
= 1 MHz)
12µs
10µs
8µs
150A
125A
100A
75A
50A
25A
0A
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
12V
14V
16V
18V
V
GE
,
GATE
–
EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
V
GE
,
GATE
–
EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
=600V
,
start at
T
J
=
25°C,
T
Jmax
<150°C)
(
V
CE
≤
400V,
T
j
≤
150
°
C)
8
Rev. 2
Oct-04
Power Semiconductors
IKA10N60T
TrenchStop Series
D
=0.5
D
=0.5
0.2
0.2
0
0
K/W
0
-1
K/W
0
-2
K/W
R
, ( K / W )
τ
,
( s )
10
0
K/W
0.1
1.418
5.068
6
0.1
2.125
1.416
6.455*10
-2
5.732*10
-3
1.019*10
-3
1.499*10
-4
R
, ( K / W )
1.596
τ
,
( s )
0.5890
0.5424
0.6311
0.5061
4.622
6
1.985
1.288
0.5623
0.3324
0.3531
0.1730
5.066*10
-2
4.152*10
-3
6.059*10
-4
0.05
0.02
0.01
single pulse
0.05
0.02
0.01
single pulse
R
1
R
2
10
-1
K/W
7.863*10
-5
R
1
R
2
C
1
=
τ
1
/
R
1
C
2
=
τ
2
/
R
2
C
1
=
τ
1
/
R
1
C
2
=
τ
2
/
R
2
10
-2
K/W
10µs 100µs 1ms
10ms100ms 1s
10s
10µs 100µs 1ms
10ms100ms 1s
10s
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal resistance
t
P
,
PULSE WIDTH
Figure 22. Diode transient thermal
(
D = t
p
/
T
)
impedance as a function of pulse
width
(
D
=
t
P
/
T
)
0,8µC
0,7µC
0,6µC
0,5µC
0,4µC
0,3µC
0,2µC
0,1µC
0,0µC
T
J
=175°C
300ns
250ns
T
J
=175°C
200ns
150ns
T
J
=25°C
100ns
T
J
=25°C
50ns
0ns
200A/µs
400A/µs
600A/µs
800A/µs
200A/µs 400A/µs 600A/µs 800A/µs
di
F
/dt
,
DIODE CURRENT SLOPE
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
=400V,
I
F
=10A,
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
Dynamic test circuit in Figure E)
(
V
R
= 400V,
I
F
= 10A,
Dynamic test circuit in Figure E)
9
Rev. 2
Oct-04
Power Semiconductors
IKA10N60T
TrenchStop Series
14A
12A
10A
8A
T
J
=175°C
T
J
=25°C
T
J
=25°C
-700A/µs
-600A/µs
-500A/µs
-400A/µs
-300A/µs
-200A/µs
-100A/µs
T
J
=175°C
6A
4A
2A
0A/µs
0A
400A/µs
600A/µs
800A/µs
200A/µs 400A/µs 600A/µs 800A/µs
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(
V
R
=400V,
I
F
=10A,
(
V
R
= 400V,
I
F
= 10A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
30A
2,0V
T
J
=25°C
175°C
I
F
=20A
10A
5A
1,5V
1,0V
0,5V
0,0V
20A
10A
0A
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
V
F
,
FORWARD VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
10
Rev. 2
Oct-04
Power Semiconductors
IKA10N60T
TrenchStop Series
dimensions
[mm]
P-TO220-3-31
symbol
[inch]
min
10.37
15.86
0.65
max
10.63
16.12
0.78
min
max
A
B
C
D
E
F
0.4084
0.6245
0.0256
0.4184
0.6345
0.0306
2.95 typ.
3.15
0.1160 typ.
3.25
6.56
13.73
3.43
0.63
1.36
0.124
0.2384
0.5304
0.125
0.128
0.2584
0.5404
0.135
6.05
13.47
3.18
0.45
1.23
G
H
K
L
0.0177
0.0484
0.0247
0.0534
M
N
P
T
2.54 typ.
0.100 typ.
4.57
2.57
2.51
4.83
2.83
2.62
0.1800
0.1013
0.0990
0.1900
0.1113
0.1030
Please refer to mounting instructions (application note AN-TO220-3-31-01)
11
Rev. 2
Oct-04
Power Semiconductors
IKA10N60T
TrenchStop Series
i,v
t
r r
=t
S
+
t
F
di
F
/dt
Q
r r
=Q
S
+
Q
F
t
r r
I
F
t
S
t
F
t
Q
S
10%
I
r r m
Q
F
I
r r m
di
r r
/dt
90%
I
r r m
V
R
Figure C. Definition of diodes
switching characteristics
τ
1
τ
2
r
2
τ
n
r
1
r
n
T (t)
j
p(t)
r
2
r
1
r
n
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance
L
σ
=60nH
and
S
tray
capacity
C
σ
=40pF.
Figure B. Definition of switching losses
12
Rev. 2
Oct-04
Power Semiconductors
IKA10N60T
TrenchStop Series
Published by
Infineon Technologies AG
,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
13
Rev. 2
Oct-04
Power Semiconductors
