Infineon-Technologies-IKA15N65H5
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IGBT
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOP
TM
ꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiparallelꢀdiode
IKA15N65H5
650VꢀDuoPackꢀIGBTꢀandꢀDiode
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOP
TM
ꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiparallelꢀdiode
ꢀ
C
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀH5ꢀtechnologyꢀoffering
•ꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
topologies
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs
•ꢀ650Vꢀbreakdownꢀvoltage
•ꢀLowꢀQ
G
G
E
•ꢀIGBTꢀcopackedꢀwithꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
Applications:
•ꢀSolarꢀconverters
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀWeldingꢀconverters
•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
V
CE
I
C
V
CEsat
,ꢀ
T
vj
=25°C
T
vjmax
1.65V 175°C
Marking
Package
IKA15N65H5
650V
15A
K15EH5
PG-TO220-3 FP
2
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
15
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
7
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°C
T
C
ꢀ=ꢀ100°C
I
C
14.0
8.5
A
Pulsedꢀcollectorꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Cpuls
45.0
45.0
A
A
Turnꢀoffꢀsafeꢀoperatingꢀareaꢀ
V
CE
ꢀ
≤
ꢀ650V,ꢀ
T
vj
ꢀ
≤
ꢀ175°C
–
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°C
T
C
ꢀ=ꢀ100°C
I
F
12.3
7.3
A
Diodeꢀpulsedꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Fpuls
V
GE
45.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(
t
p
ꢀ
≤
ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ25°C
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ100°C
33.3
16.7
P
tot
W
Operating junction temperature
Storage temperature
T
vj
-40…+175
-55…+150
°C
°C
T
stg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
th(j-c)
R
th(j-c)
R
th(j-a)
4.50
5.60
65
K/W
K/W
K/W
Diode thermal resistance,
junction – case
Thermal resistance
junction – ambient
4
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
ꢀ=ꢀ0V,ꢀ
I
C
ꢀ=ꢀ0.20mA
V
GE
ꢀ=ꢀ15.0V,ꢀ
I
C
ꢀ=ꢀ15.0A
T
vj
ꢀ=ꢀ25°C
Collector-emitter saturation voltage
V
CEsat
T
vj
ꢀ=ꢀ125°C
650
–
–
V
V
–
–
–
1.65 2.10
1.85
1.95
–
–
T
vj
ꢀ=ꢀ175°C
V
GE
ꢀ=ꢀ0V,ꢀ
I
F
ꢀ=ꢀ9.0A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ125°C
T
vj
ꢀ=ꢀ175°C
–
–
–
1.45 1.80
Diode forward voltage
V
F
V
V
1.40
1.40
–
–
Gate-emitter threshold voltage
V
GE(th)
I
C
ꢀ=ꢀ0.15mA,ꢀ
V
CE
ꢀ=ꢀ
V
GE
3.2
4.0
4.8
V
CE
ꢀ=ꢀ650V,ꢀ
V
GE
ꢀ=ꢀ0V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Zero gate voltage collector current
I
CES
–
–
–
–
40.0 µA
4000.0
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
ꢀ=ꢀ0V,ꢀ
V
GE
ꢀ=ꢀ20V
V
CE
ꢀ=ꢀ20V,ꢀ
I
C
ꢀ=ꢀ15.0A
–
–
–
100
–
nA
S
22.0
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
C
ies
–
–
–
930
24
4
–
–
–
Output capacitance
C
oes
C
res
V
CE
ꢀ=ꢀ25V,ꢀ
V
GE
ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
nC
Reverse transfer capacitance
V
CC
ꢀ=ꢀ520V,ꢀ
I
C
ꢀ=ꢀ15.0A,
V
GE
ꢀ=ꢀ15V
Gate charge
Q
G
–
38.0
–
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
17
7
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ7.5A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ39.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ39.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
160
10
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.12
0.05
0.17
mJ
mJ
mJ
Turn-off energy
Total switching energy
5
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
16
3
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ2.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ39.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ39.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
138
20
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
E
on
E
off
E
ts
0.04
0.02
0.06
mJ
mJ
mJ
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
48
0.20
8.0
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ25°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ7.5A,
Q
rr
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ1000A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-200
–
A/µs
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
25
0.09
6.7
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ25°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ2.0A,
Q
rr
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ1000A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-500
–
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ150°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
16
8
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ150°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ7.5A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ39.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ39.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
180
16
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.18
0.08
0.26
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
14
4
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ150°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ2.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ39.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ39.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
220
30
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
E
on
E
off
E
ts
0.06
0.03
0.09
mJ
mJ
mJ
6
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
74
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ150°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ7.5A,
Q
rr
0.42
11.0
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ1000A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-160
–
A/µs
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
42
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ150°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ2.0A,
Q
rr
0.21
10.5
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ1000A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-310
–
A/µs
7
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
35
30
25
20
15
10
5
10
t
p
=1µs
10µs
50µs
100µs
200µs
500µs
DC
1
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1.
Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(
D
=0,ꢀ
T
C
=25°C,ꢀ
T
vj
≤
175°C;ꢀ
V
GE
=15V.
Recommendedꢀuseꢀatꢀ
V
GE
≥
7.5V)
Figure 2.
Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
temperature
(
T
vj
≤
175°C)
14.0
12.0
10.0
8.0
45
40
V
GE
=20V
18V
12V
10V
8V
35
30
25
20
15
10
5
6.0
7V
6V
4.0
5V
4V
2.0
0.0
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=25°C)
(
V
GE
≥
15V,ꢀ
T
vj
≤
175°C)
8
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
T
j
=25°C
T
j
=150°C
V
GE
=20V
18V
12V
10V
8V
7V
6V
5V
4V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=150°C)
Figure 6.
Typicalꢀtransferꢀcharacteristic
(
V
CE
=20V)
2.25
1000
I
C
=3,8A
I
C
=7,5A
I
C
=15A
t
d(off)
t
f
t
d(on)
t
r
2.00
1.75
1.50
1.25
1.00
0.75
100
10
1
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
40
45
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7.
Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
Figure 8.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(
V
GE
=15V)
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=15/0V,ꢀ
r
G
=39
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
9
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1000
100
10
1000
100
10
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
1
1
5
15
25
35
45
55
65
75
85
25
50
75
100
125
150
175
r
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
Figure 10.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=15/0V,ꢀ
I
C
=7,5A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
I
C
=7,5A,ꢀ
r
G
=39
Ω
,Dynamicꢀtestꢀcircuitꢀin
Figure E)
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
typ.
min.
max.
E
off
E
on
E
ts
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
40
45
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11.
Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
Figure 12.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
(
I
C
=0.15mA)
functionꢀofꢀcollectorꢀcurrent
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=15/0V,ꢀ
r
G
=39
Ω
,Dynamicꢀtestꢀcircuitꢀin
Figure E)
10
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.300
0.275
0.250
0.225
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
E
off
E
on
E
ts
E
off
E
on
E
ts
5
15
25
35
45
55
65
75
85
25
50
75
100
125
150
175
r
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 14.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
I
C
=7,5A,ꢀ
r
G
=39
Ω
,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=15/0V,ꢀ
I
C
=7,5A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
0.300
0.275
0.250
0.225
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
16
E
off
E
on
E
ts
130V
520V
14
12
10
8
6
4
2
0
200
250
300
350
400
450
500
0
5
10
15
20
25
30
35
40
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Q
GE
,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
GE
=15/0V,
I
C
=7,5A,ꢀ
r
G
=39
Ω
,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 16.
Typicalꢀgateꢀcharge
(
I
C
=15A)
11
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
C
iss
C
oss
C
rss
1000
100
10
D=0.5
0.2
1
0.1
0.05
0.02
0.01
single pulse
0.1
i:
r
i
[K/W]: 0.2571578 0.5731833 0.4460929 0.5209172 1.804766 0.8978826
τ
i
[s]: 1.8E-4
1.2E-3 9.1E-3 0.1021129
1.367234 7.180227
1
2
3
4
5
6
1
0.01
0
5
10
15
20
25
30
1E-6 1E-5 1E-4
0.001 0.01
0.1
1
10
100
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17.
Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18.
IGBTꢀtransientꢀthermalꢀresistance
(
D
=
t
p
/T)
(
V
GE
=0V,ꢀf=1MHz)
90
T
j
=25°C, I
F
= 7.5A
T
j
=150°C, I
F
= 7.5A
80
70
60
50
40
30
1
D=0.5
0.2
0.1
0.05
0.02
0.1
0.01
single pulse
0.01
i:
r
i
[K/W]: 0.9520941 1.171948 0.5287944 0.4647577
1.671981 0.8104246
τ
i
[s]: 2.1E-4
1.1E-3 8.9E-3
0.09325149 1.367755 7.182978
1
2
3
4
5
6
0.001
1E-6 1E-5 1E-4
0.001 0.01
0.1
1
10
100
600
800 1000
1200 1400 1600 1800 2000
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19.
Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20.
Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(
D
=
t
p
/T)
(
V
R
=400V)
12
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
17.5
15.0
12.5
10.0
7.5
T
j
=25°C, I
F
= 7.5A
T
j
=150°C, I
F
= 7.5A
T
j
=25°C, I
F
= 7.5A
T
j
=150°C, I
F
= 7.5A
5.0
600
800 1000
1200 1400 1600 1800 2000
600
800 1000
1200 1400 1600 1800 2000
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21.
Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
Figure 22.
Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
0
27
T
j
=25°C, I
F
= 7.5A
T
j
=150°C, I
F
= 7.5A
T
j
=25°C
T
j
=150°C
24
-50
-100
-150
-200
-250
-300
-350
-400
21
18
15
12
9
6
3
0
600
800 1000
1200 1400 1600 1800 2000
0.0
0.5
1.0
1.5
2.0
2.5
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
V
F
,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 23.
Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 24.
Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(
V
R
=400V)
13
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
F
=4,5A
I
F
=9A
I
F
=18A
25
50
75
100
125
150
175
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25.
Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
14
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Package Drawing PG-TO220-3-FP
15
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Testing Conditions
V
GE
(t)
I,V
90%
V
GE
t
rr
=
t
a
+
t
b
dI
F
/dt
Q
rr
=
Q
a
+
Q
b
a
b
10%
V
GE
t
Q
a
Q
b
I
C
(t)
dI
90%
I
C
90%
I
C
10%
I
C
10%
I
C
Figure C.
Definition of diode switching
characteristics
t
V
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
Figure A.
V
GE
(t)
90%
V
GE
Figure D.
10%
V
GE
t
I
C
(t)
CC
2%
I
C
t
V
CE
(t)
Figure E.
Dynamic test circuit
Parasitic inductance L
,
parasitic capacitor C
,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t
2
t
4
E
=
V
CE
x
I
C
x d
t
E
=
V
CE
x
I
C
x d
t
off
on
2%
V
CE
t
1
t
3
t
t
1
t
2
t
3
t
4
Figure B.
16
Rev.ꢀ2.1,ꢀꢀ2015-05-05
IKA15N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
RevisionꢀHistory
IKA15N65H5
Revision:ꢀ2015-05-05,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2012-11-09 Preliminary
datasheet
2013-12-17 New
Marking Pattern
2015-05-05 Final
data sheet
1.1
1.2
2.1
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and/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbe
endangered.
17
Rev.ꢀ2.1,ꢀꢀ2015-05-05
