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IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
TRENCHSTOP
TM
ꢀ5ꢀhighꢀspeedꢀsoftꢀswitchingꢀIGBTꢀcopackedꢀwithꢀfullꢀrated
currentꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiꢀparallelꢀdiode
ꢀ
C
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀS5ꢀtechnologyꢀoffering
•ꢀHighꢀspeedꢀsmoothꢀswitchingꢀdeviceꢀforꢀhardꢀ&ꢀsoftꢀswitching
•ꢀVeryꢀLowꢀ
V
CEsat
,ꢀ1.35Vꢀatꢀnominalꢀcurrent
•ꢀ650Vꢀbreakdownꢀvoltage
G
•ꢀLowꢀQ
G
E
•ꢀIGBTꢀcopackedꢀwithꢀfullꢀratedꢀcurrentꢀRAPIDꢀ1ꢀfastꢀantiparallel
diode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
C
PotentialꢀApplications:
•ꢀEnergyꢀGeneration
ꢀꢀꢀ-ꢀSolarꢀStringꢀInverter
ꢀꢀꢀ-ꢀSolarꢀMicroꢀInverter
•ꢀIndustrialꢀPowerꢀSupplies
ꢀꢀꢀ-ꢀIndustrialꢀSMPS
ꢀꢀꢀ-ꢀIndustrialꢀUPS
G
E
•ꢀMetalꢀTreatment
ꢀꢀꢀ-ꢀWelding
•ꢀEnergyꢀDistribution
ꢀꢀꢀ-ꢀEnergyꢀStorage
•ꢀInfrastructureꢀ–ꢀCharge
ꢀꢀꢀ-ꢀCharger
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
V
CE
I
C
V
CEsat
,ꢀ
T
vj
=25°C
T
vjmax
1.35V 175°C
Marking
K30EES5
Package
IKB30N65ES5
650V
30A
PG-TO263-3
Datasheet
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
2018-01-11
IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
13
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
5
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
Vꢀ2.1
2018-01-11
IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀ
T
vj
ꢀ
≥
ꢀ25°C
V
CE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
c
ꢀ=ꢀ25°C
T
c
ꢀ=ꢀ100°C
I
C
62.0
39.5
A
Pulsedꢀcollectorꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Cpuls
120.0
120.0
A
A
Turn off safe operating area
V
CE
ꢀ
≤
ꢀ650V,ꢀ
T
vj
ꢀ
≤
ꢀ175°C,ꢀ
t
p
ꢀ=ꢀ1µs
–
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
c
ꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
T
c
ꢀ=ꢀ100°C
I
F
40.0
39.5
A
Diodeꢀpulsedꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Fpuls
V
GE
120.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(
t
p
ꢀ
≤
ꢀ10µs,ꢀ
D
ꢀ<ꢀ0.010)
±20
±30
Powerꢀdissipationꢀ
T
c
ꢀ=ꢀ25°C
Powerꢀdissipationꢀ
T
c
ꢀ=ꢀ100°C
188.0
94.0
P
tot
W
Operating junction temperature
Storage temperature
T
vj
-40…+175
-55…+150
°C
°C
T
stg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
R
th
ꢀCharacteristics
IGBT thermal resistance,
junction – case
R
th(j-c)
R
th(j-c)
R
th(j-a)
–
–
–
–
–
–
0.80 K/W
1.00 K/W
65 K/W
Diode thermal resistance,
junction – case
Thermal resistance, min. footprint
junction – ambient
Thermal resistance, 6cm² Cu on
PCB
R
th(j-a)
–
–
40 K/W
junction – ambient
Datasheet
3
Vꢀ2.1
2018-01-11
IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
ꢀ=ꢀ0V,ꢀ
I
C
ꢀ=ꢀ0.20mA
V
GE
ꢀ=ꢀ15.0V,ꢀ
I
C
ꢀ=ꢀ30.0A
T
vj
ꢀ=ꢀ25°C
Collector-emitter saturation voltage
V
CEsat
T
vj
ꢀ=ꢀ125°C
650
–
–
V
V
–
–
–
1.35 1.70
1.50
1.60
–
–
T
vj
ꢀ=ꢀ175°C
V
GE
ꢀ=ꢀ0V,ꢀ
I
F
ꢀ=ꢀ30.0A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ125°C
T
vj
ꢀ=ꢀ175°C
–
–
–
1.45 1.70
Diode forward voltage
V
F
V
1.42
1.39
–
–
Gate-emitter threshold voltage
V
GE(th)
I
C
ꢀ=ꢀ0.30mA,ꢀ
V
CE
ꢀ=ꢀ
V
GE
3.2
4.0
4.8
V
V
CE
ꢀ=ꢀ650V,ꢀ
V
GE
ꢀ=ꢀ0V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Zero gate voltage collector current
I
CES
–
–
–
50
–
µA
1400
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
ꢀ=ꢀ0V,ꢀ
V
GE
ꢀ=ꢀ20V
V
CE
ꢀ=ꢀ20V,ꢀ
I
C
ꢀ=ꢀ30.0A
–
–
–
100
–
nA
S
42.0
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
C
ies
–
–
–
1800
55
–
–
–
Output capacitance
C
oes
C
res
V
CE
ꢀ=ꢀ25V,ꢀ
V
GE
ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
7
V
CC
ꢀ=ꢀ520V,ꢀ
I
C
ꢀ=ꢀ30.0A,
V
GE
ꢀ=ꢀ15V
Gate charge
Q
G
L
E
–
–
70.0
7.0
–
–
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
17
12
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ30.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ13.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ13.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
124
30
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.56
0.32
0.88
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
Vꢀ2.1
2018-01-11
IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
16
6
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ15.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ13.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ13.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
133
33
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
E
on
E
off
E
ts
0.26
0.17
0.43
mJ
mJ
mJ
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
75
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ25°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ30.0A,
di
F
/dt
ꢀ=ꢀ1200A/µs
Q
rr
0.83
18.0
Diode peak reverse recovery current
I
rrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-900
–
A/µs
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
52
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ25°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ15.0A,
di
F
/dt
ꢀ=ꢀ1900A/µs
Q
rr
0.60
18.5
Diode peak reverse recovery current
I
rrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-1315
–
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ150°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
17
13
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ150°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ30.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ13.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ13.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
149
55
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.77
0.56
1.33
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
16
7
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ150°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ15.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ13.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ13.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
179
54
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
E
on
E
off
E
ts
0.41
0.31
0.72
mJ
mJ
mJ
Datasheet
5
Vꢀ2.1
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IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
110
1.75
26.5
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ150°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ30.0A,
Q
rr
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ1200A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-1000
–
A/µs
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
78
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ150°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ15.0A,
Q
rr
1.25
26.2
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ1900A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-1200
–
A/µs
Datasheet
6
Vꢀ2.1
2018-01-11
IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
200
180
160
140
120
100
80
70
60
50
40
30
20
10
0
60
40
20
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1.
Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(
T
vj
≤
175°C)
(
V
GE
≥
15V,ꢀ
T
vj
≤
175°C)
90
90
V
GE
= 20V
V
GE
= 20V
18V
15V
12V
10V
8V
18V
15V
12V
10V
8V
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
7V
7V
6V
6V
5V
5V
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=25°C)
Figure 4.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=175°C)
Datasheet
7
Vꢀ2.1
2018-01-11
IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
90
3.0
2.5
2.0
1.5
1.0
0.5
T
vj
= 25°C
T
vj
= 150°C
I
C
= 15A
I
C
= 30A
I
C
= 60A
80
70
60
50
40
30
20
10
0
2
3
4
5
6
7
8
9
10
25
50
75
100
125
150
175
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5.
Typicalꢀtransferꢀcharacteristic
(
V
CE
=20V)
Figure 6.
Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(
V
GE
=15V)
1000
1000
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
100
10
1
100
10
1
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
80
90
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
R
G
,ꢀGATEꢀRESISTANCEꢀ[
Ω
]
Figure 7.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistance
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
R
Gon
=13
Ω
,ꢀ
R
Goff
=13
Ω
,ꢀdynamic
test circuit in Figure E)
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
I
C
=30A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
8
Vꢀ2.1
2018-01-11
IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
1000
6
5
4
3
2
1
0
t
d(off)
t
f
t
d(on)
t
r
typ.
100
10
1
25
50
75
100
125
150
175
25
50
75
100
125
150
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10.
Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=0/15V,
I
C
=30A,ꢀ
R
Gon
=13
Ω
,ꢀ
R
Goff
=13
Ω
,ꢀdynamicꢀtest
circuit in Figure E)
(
I
C
=0.3mA)
5.0
2.5
E
off
E
on
E
ts
E
off
E
on
E
ts
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
80
90
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
R
G
,ꢀGATEꢀRESISTANCEꢀ[
Ω
]
Figure 11.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=150/V,ꢀ
R
Gon
=13
Ω
,ꢀ
R
Goff
=13
Ω
,ꢀdynamic
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
I
C
=30A,ꢀdynamicꢀtestꢀcircuitꢀin
test circuit in Figure E)
Figure E)
Datasheet
9
Vꢀ2.1
2018-01-11
IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
2.00
1.50
1.25
1.00
0.75
0.50
0.25
0.00
E
off
E
on
E
ts
E
off
E
on
E
ts
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
50
75
100
125
150
175
200
250
300
350
400
450
500
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
Figure 14.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=0/15V,
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
GE
=0/15V,
I
C
=30A,ꢀ
R
Gon
=13
Ω
,ꢀ
R
Goff
=13
Ω
,ꢀdynamicꢀtest
circuit in Figure E)
I
C
=30A,ꢀ
R
Gon
=13
Ω
,ꢀ
R
Goff
=13
Ω
,ꢀdynamicꢀtest
circuit in Figure E)
16
14
12
10
8
1E+4
1000
100
10
V
CC
ꢀ=ꢀ130V
V
CC
ꢀ=ꢀ520V
C
ies
C
oes
C
res
6
4
2
0
1
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
Q
GE
,ꢀGATEꢀCHARGEꢀ[nC]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15.
Typicalꢀgateꢀcharge
(
I
C
=30A)
Figure 16.
Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(
V
GE
=0V,ꢀf=1MHz)
Datasheet
10
Vꢀ2.1
2018-01-11
IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
1
1
D = 0.5
D = 0.5
0.2
0.1
0.2
0.1
0.1
0.1
0.05
0.02
0.01
0.05
0.02
0.01
single pulse
single pulse
0.01
0.01
i:
1
2
3
4
5
6
i:
1
2
3
4
5
6
r
i
[K/W]: 9.3E-3 0.242715 0.373613 0.158334 0.014318 1.9E-3
r
i
[K/W]: 0.014545 0.309949 0.475571 0.182319 0.01682
2.2E-3
τ
i
[s]:
1.6E-5 3.4E-4
2.7E-3
0.014105 0.204769 2.877416
τ
i
[s]:
1.6E-5
3.4E-4
2.6E-3
0.01432 0.201605
2.700794
0.001
1E-6
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
1E-5
1E-4
0.001
0.01
0.1
1
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17.
IGBTꢀtransientꢀthermalꢀimpedance
(
D
=
t
p
/T)
Figure 18.
Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(
D
=
t
p
/T)
200
2.00
T
vj
= 25°C, I
F
= 30A
T
vj
= 150°C, I
F
= 30A
T
vj
= 25°C, I
F
= 30A
T
vj
= 150°C, I
F
= 30A
175
150
125
100
75
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
50
25
0
600
800 1000
1200 1400 1600 1800 2000
600
800 1000
1200 1400 1600 1800 2000
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19.
Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
Figure 20.
Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
(
V
R
=400V)
Datasheet
11
Vꢀ2.1
2018-01-11
IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
40
0
-200
T
vj
= 25°C, I
F
= 30A
T
vj
= 150°C, I
F
= 30A
T
vj
= 25°C, I
F
= 30A
T
vj
= 150°C, I
F
= 30A
35
30
25
20
15
10
5
-400
-600
-800
-1000
-1200
-1400
-1600
-1800
0
600
800 1000
1200 1400 1600 1800 2000
600
800 1000
1200 1400 1600 1800 2000
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21.
Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
Figure 22.
Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(
V
R
=400V)
90
2.50
T
vj
= 25°C
T
vj
= 150°C
I
F
= 15A
I
F
= 30A
80
I
F
= 60A
2.25
70
60
50
40
30
20
10
0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.0
0.5
1.0
1.5
2.0
2.5
25
50
75
100
125
150
175
V
F
,ꢀFORWARDꢀVOLTAGEꢀ[V]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 23.
Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
Figure 24.
Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.1
2018-01-11
IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
Package Drawing PG-TO263-3
MIN
4.30
0.00
0.65
0.95
0.33
1.17
8.51
7.10
9.80
6.50
MAX
4.57
0.25
0.85
1.15
0.65
1.40
9.45
7.90
10.31
8.60
MIN
MAX
0.180
0.010
0.033
0.045
0.026
0.055
0.372
0.311
0.406
0.339
0.169
0.000
0.026
0.037
0.013
0.046
0.335
0.280
0.386
0.256
Z8B00003324
0
5
5
0
2.54
5.08
2
0.100
0.200
2
7.5mm
14.61
2.29
0.70
1.00
16.05
9.30
4.50
10.70
3.65
1.25
15.88
3.00
1.60
1.78
16.25
9.50
4.70
10.90
3.85
1.45
0.575
0.090
0.028
0.039
0.632
0.366
0.177
0.421
0.144
0.049
0.625
0.118
0.063
0.070
0.640
0.374
0.185
0.429
0.152
0.057
30-08-2007
01
Datasheet
13
Vꢀ2.1
2018-01-11
IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
Testing Conditions
V
GE
(t)
I,V
90%
V
GE
t
rr
=
t
a
+
t
b
dI
F
/dt
Q
rr
=
Q
a
+
Q
b
a
b
10%
V
GE
t
Q
a
Q
b
I
C
(t)
dI
90%
I
C
90%
I
C
10%
I
C
10%
I
C
Figure C.
Definition of diode switching
characteristics
t
V
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
Figure A.
V
GE
(t)
90%
V
GE
Figure D.
10%
V
GE
t
I
C
(t)
CC
2%
I
C
t
V
CE
(t)
Figure E.
Dynamic test circuit
Parasitic inductance L
,
parasitic capacitor C
,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t
2
t
4
E
=
V
CE
x
I
C
x d
t
E
=
V
CE
x
I
C
x d
t
off
on
2%
V
CE
t
1
t
3
t
t
1
t
2
t
3
t
4
Figure B.
Datasheet
14
Vꢀ2.1
2018-01-11
IKB30N65ES5
Highꢀspeedꢀswitchingꢀseriesꢀ5
th
ꢀgeneration
RevisionꢀHistory
IKB30N65ES5
Revision:ꢀ2018-01-11,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2018-01-11 Final
data sheet
Datasheet
15
Vꢀ2.1
2018-01-11
Trademarks
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ꢀ
ꢀ
ꢀ
ꢀ
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2018.
AllꢀRightsꢀReserved.
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(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany
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