Infineon-Technologies-IKB40N65ES5ATMA1

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

TRENCHSTOP

TM

ꢀ5ꢀhighꢀspeedꢀsoftꢀswitchingꢀIGBTꢀcopackedꢀwithꢀfullꢀrated  

currentꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiꢀparallelꢀdiode  

ꢀ

C

FeaturesꢀandꢀBenefits:  

HighꢀspeedꢀS5ꢀtechnologyꢀoffering  

•ꢀHighꢀspeedꢀsmoothꢀswitchingꢀdeviceꢀforꢀhardꢀ&ꢀsoftꢀswitching  

•ꢀVeryꢀLowꢀ

V

CEsat

,ꢀ1.35Vꢀatꢀnominalꢀcurrent  

•ꢀ650Vꢀbreakdownꢀvoltage  

G

•ꢀLowꢀQ

G  

E

•ꢀIGBTꢀcopackedꢀwithꢀfullꢀratedꢀcurrentꢀRAPIDꢀ1ꢀfastꢀantiparallel  

diode  

•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C  

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  

•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  

C

PotentialꢀApplications:  

•ꢀEnergyꢀGeneration  

ꢀꢀꢀ-ꢀSolarꢀStringꢀInverter  

ꢀꢀꢀ-ꢀSolarꢀMicroꢀInverter  

•ꢀIndustrialꢀPowerꢀSupplies  

ꢀꢀꢀ-ꢀIndustrialꢀSMPS  

ꢀꢀꢀ-ꢀIndustrialꢀUPS  

G

E

•ꢀMetalꢀTreatment  

ꢀꢀꢀ-ꢀWelding  

•ꢀEnergyꢀDistribution  

ꢀꢀꢀ-ꢀEnergyꢀStorage  

•ꢀInfrastructureꢀ–ꢀCharge  

ꢀꢀꢀ-ꢀCharger  

ProductꢀValidation:  

Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests  

ofꢀJEDEC47/20/22  

KeyꢀPerformanceꢀandꢀPackageꢀParameters  

Type  

V

CE  

I

C  

V

CEsat

,ꢀ

T

vj

=25°C

T

vjmax  

1.35V 175°C  

Marking  

K40EES5  

Package  

IKB40N65ES5  

650V  

40A  

PG-TO263-3  

Datasheet  

PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument  

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

TableꢀofꢀContents  

Description .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  

Table of Contents

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  

Maximum Ratings

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Thermal Resistance

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Electrical Characteristics

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  

Electrical Characteristics Diagrams

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

7  

Package Drawing

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

.

13  

Testing Conditions

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  

Revision History

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

.

1

5  

Disclaimer .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  

Datasheet  

2

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

MaximumꢀRatings  

Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.  

Parameter  

Symbol  

Value  

Unit  

Collector-emitterꢀvoltage,ꢀ

T

vj

ꢀ

≥

ꢀ25°C  

V

CE  

650  

V

DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ

T

vjmax  

T

c

ꢀ=ꢀ25°C  

T

c

ꢀ=ꢀ100°C  

I

C  

79.0  

50.0  

A

Pulsedꢀcollectorꢀcurrent,ꢀ

t

p

ꢀlimitedꢀbyꢀ

T

vjmax  

I

Cpuls  

160.0  

160.0  

A

A

Turn off safe operating area  

V

CE

ꢀ

≤

ꢀ650V,ꢀ

T

vj

ꢀ

≤

ꢀ175°C,ꢀ

t

p

ꢀ=ꢀ1µs  

–

1)  

Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ

T

vjmax  

T

c

ꢀ=ꢀ25°C  

T

c

ꢀ=ꢀ100°C  

I

F  

40.0  

40.0  

A

Diodeꢀpulsedꢀcurrent,ꢀ

t

p

ꢀlimitedꢀbyꢀ

T

vjmax  

I

Fpuls  

V

GE  

160.0  

A

V

Gate-emitter voltage  

TransientꢀGate-emitterꢀvoltageꢀ(

t

p

ꢀ

≤

ꢀ10µs,ꢀ

D

ꢀ<ꢀ0.010)  

±20  

±30  

Powerꢀdissipationꢀ

T

c

ꢀ=ꢀ25°C  

Powerꢀdissipationꢀ

T

c

ꢀ=ꢀ100°C  

230.0  

115.0  

P

tot  

W

Operating junction temperature  

Storage temperature  

T

vj  

-40…+175  

-55…+150  

°C  

°C  

T

stg  

Soldering temperature,  

reflow soldering (MSL1 according to JEDEC J-STA-020)  

°C  

260  

ThermalꢀResistance  

Value  

min. typ. max.  

Parameter  

Symbol Conditions  

Unit  

R

th

ꢀCharacteristics  

IGBT thermal resistance,  

junction – case  

R

th(j-c)  

R

th(j-c)  

R

th(j-a)  

–

–

–

–

–

–

0.65 K/W  

0.75 K/W  

65 K/W  

Diode thermal resistance,  

junction – case  

Thermal resistance, min. footprint  

junction – ambient  

Thermal resistance, 6cm² Cu on  

PCB  

R

th(j-a)  

–

–

40 K/W  

junction – ambient  

Datasheet  

3

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

ElectricalꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

StaticꢀCharacteristic  

Collector-emitter breakdown voltage

V

(BR)CES

V

GE

ꢀ=ꢀ0V,ꢀ

I

C

ꢀ=ꢀ0.20mA  

V

GE

ꢀ=ꢀ15.0V,ꢀ

I

C

ꢀ=ꢀ40.0A  

T

vj

ꢀ=ꢀ25°C  

Collector-emitter saturation voltage

 

V

CEsat  

T

vj

ꢀ=ꢀ125°C  

650  

–

–

V

V

–

–

–

1.35 1.70  

1.50  

1.60  

–

–

T

vj

ꢀ=ꢀ175°C  

V

GE

ꢀ=ꢀ0V,ꢀ

I

F

ꢀ=ꢀ40.0A  

T

vj

ꢀ=ꢀ25°C  

T

vj

ꢀ=ꢀ125°C  

T

vj

ꢀ=ꢀ175°C  

–

–

–

1.45 1.70  

Diode forward voltage  

V

F  

V

1.42  

1.39  

–

–

Gate-emitter threshold voltage  

V

GE(th)  

I

C

ꢀ=ꢀ0.40mA,ꢀ

V

CE

ꢀ=ꢀ

V

GE  

3.2  

4.0  

4.8  

V

V

CE

ꢀ=ꢀ650V,ꢀ

V

GE

ꢀ=ꢀ0V  

T

vj

ꢀ=ꢀ25°C  

T

vj

ꢀ=ꢀ175°C  

Zero gate voltage collector current

 

I

CES  

–

–

–

50  

–

µA  

2000  

Gate-emitter leakage current  

Transconductance  

I

GES  

g

fs  

V

CE

ꢀ=ꢀ0V,ꢀ

V

GE

ꢀ=ꢀ20V  

V

CE

ꢀ=ꢀ20V,ꢀ

I

C

ꢀ=ꢀ40.0A  

–

–

–

100  

–

nA  

S

45.0  

ElectricalꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

DynamicꢀCharacteristic  

Input capacitance  

C

ies  

–

–

–

2500  

71  

–

–

–

Output capacitance  

C

oes  

C

res  

V

CE

ꢀ=ꢀ25V,ꢀ

V

GE

ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  

pF  

Reverse transfer capacitance  

9

V

CC

ꢀ=ꢀ520V,ꢀ

I

C

ꢀ=ꢀ40.0A,  

V

GE

ꢀ=ꢀ15V  

Gate charge  

Q

G  

L

E  

–

–

95.0  

7.0  

–

–

nC  

nH  

Internal emitter inductance  

measured 5mm (0.197 in.) from  

case  

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

IGBTꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

19  

18  

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ25°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ40.0A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

R

G(on)

ꢀ=ꢀ10.0

Ω

,ꢀ

R

G(off)

ꢀ=ꢀ10.0

Ω

,  

L

σ

ꢀ=ꢀ30nH,ꢀ

C

σ

ꢀ=ꢀ30pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

Energy losses include “tail” and  

diode reverse recovery.  

Turn-off delay time  

Fall time  

130  

23  

ns  

ns  

Turn-on energy  

E

on  

E

off  

E

ts  

0.86  

0.40  

1.26  

mJ  

mJ  

mJ  

Turn-off energy  

Total switching energy  

Datasheet  

4

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

18  

7

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ25°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ20.0A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

R

G(on)

ꢀ=ꢀ10.0

Ω

,ꢀ

R

G(off)

ꢀ=ꢀ10.0

Ω

,  

L

σ

ꢀ=ꢀ30nH,ꢀ

C

σ

ꢀ=ꢀ30pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

Energy losses include “tail” and  

diode reverse recovery.  

Turn-off delay time  

Fall time  

143  

24  

ns  

ns  

Turn-on energy  

Turn-off energy  

Total switching energy  

E

on  

E

off  

E

ts  

0.39  

0.21  

0.60  

mJ  

mJ  

mJ  

DiodeꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

73  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ25°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ40.0A,  

Q

rr  

1.10  

23.0  

Diode peak reverse recovery current

I

rrm  

di

F

/dt

ꢀ=ꢀ820A/µs  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-1500  

–

A/µs  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

58  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ25°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ20.0A,  

Q

rr  

0.80  

22.0  

Diode peak reverse recovery current

I

rrm  

di

F

/dt

ꢀ=ꢀ750A/µs  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-1740  

–

A/µs  

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

IGBTꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ150°C  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

20  

16  

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ150°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ40.0A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

R

G(on)

ꢀ=ꢀ10.0

Ω

,ꢀ

R

G(off)

ꢀ=ꢀ10.0

Ω

,  

L

σ

ꢀ=ꢀ30nH,ꢀ

C

σ

ꢀ=ꢀ30pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

Energy losses include “tail” and  

diode reverse recovery.  

Turn-off delay time  

Fall time  

156  

48  

ns  

ns  

Turn-on energy  

E

on  

E

off  

E

ts  

1.20  

0.69  

1.89  

mJ  

mJ  

mJ  

Turn-off energy  

Total switching energy  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

18  

8

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ150°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ20.0A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

R

G(on)

ꢀ=ꢀ10.0

Ω

,ꢀ

R

G(off)

ꢀ=ꢀ10.0

Ω

,  

L

σ

ꢀ=ꢀ30nH,ꢀ

C

σ

ꢀ=ꢀ30pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

Energy losses include “tail” and  

diode reverse recovery.  

Turn-off delay time  

Fall time  

184  

48  

ns  

ns  

Turn-on energy  

Turn-off energy  

Total switching energy  

E

on  

E

off  

E

ts  

0.60  

0.39  

0.99  

mJ  

mJ  

mJ  

Datasheet  

5

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

DiodeꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ150°C  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

120  

2.60  

36.0  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ150°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ40.0A,  

Q

rr  

Diode peak reverse recovery current

I

rrm  

di

F

/dt

ꢀ=ꢀ820A/µs  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-1250  

–

A/µs  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

91  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ150°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ20.0A,  

Q

rr  

1.80  

32.0  

Diode peak reverse recovery current

I

rrm  

di

F

/dt

ꢀ=ꢀ750A/µs  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-1350  

–

A/µs  

Datasheet  

6

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

240  

210  

180  

150  

120  

90  

80  

70  

60  

50  

40  

30  

20  

10  

0

60  

30  

0

25  

50  

75  

100  

125  

150  

175  

25  

50  

75  

100  

125  

150  

175  

T

C

,ꢀCASEꢀTEMPERATUREꢀ[°C]  

T

C

,ꢀCASEꢀTEMPERATUREꢀ[°C]  

Figure 1.

Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  

Figure 2.

Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  

temperature  

temperature  

(

T

vj

≤

175°C)  

(

V

GE

≥

15V,ꢀ

T

vj

≤

175°C)  

120  

120  

V

GE

= 20V  

V

GE

= 20V  

18V  

18V  

100  

100  

15V  

15V  

12V  

12V  

10V  

10V  

80  

80  

8V  

7V  

8V  

7V  

60  

60  

6V  

6V  

5V  

5V  

40  

40  

20  

0

20  

0

0

1

2

3

4

5

0

1

2

3

4

5

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

Figure 3.

Typicalꢀoutputꢀcharacteristic  

(

T

vj

=25°C)  

Figure 4.

Typicalꢀoutputꢀcharacteristic  

(

T

vj

=150°C)  

Datasheet  

7

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

120  

3.0  

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

T

vj

= 25°C  

T

vj

= 150°C  

I

C

= 20A  

I

C

= 40A  

I

C

= 80A  

100  

80  

60  

40  

20  

0

2

3

4

5

6

7

8

9

10  

25  

50  

75  

100  

125  

150  

175  

V

GE

,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 5.

Typicalꢀtransferꢀcharacteristic  

(

V

CE

=20V)  

Figure 6.

Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas  

aꢀfunctionꢀofꢀjunctionꢀtemperature  

(

V

GE

=15V)  

1000  

1000  

t

d(off)  

t

f  

t

d(on)  

t

r  

t

d(off)  

t

f  

t

d(on)  

t

r  

100  

10  

1

100  

10  

1

0

20  

40  

60  

80  

100  

120  

0

10  

20  

30  

40  

50  

60  

70  

I

C

,ꢀCOLLECTORꢀCURRENTꢀ[A]  

R

G

,ꢀGATEꢀRESISTANCEꢀ[

Ω

]  

Figure 7.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  

collectorꢀcurrent  

Figure 8.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate  

resistance  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

CE

=400V,  

V

GE

=0/15V,ꢀ

R

Gon

=10

Ω

,ꢀ

R

Goff

=10

Ω

,ꢀdynamic  

test circuit in Figure E)  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

CE

=400V,  

V

GE

=0/15V,ꢀ

I

C

=40A,ꢀdynamicꢀtestꢀcircuitꢀin  

Figure E)  

Datasheet  

8

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

1000  

6

5

4

3

2

1

0

t

d(off)  

t

f  

t

d(on)  

t

r  

typ.  

100  

10  

1

25  

50  

75  

100  

125  

150  

175  

25  

50  

75  

100  

125  

150  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 9.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  

junctionꢀtemperature  

Figure 10.

Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction  

ofꢀjunctionꢀtemperature  

(inductiveꢀload,ꢀ

V

CE

=400V,ꢀ

V

GE

=0/15V,  

I

C

=40A,ꢀ

R

Gon

=10

Ω

,ꢀ

R

Goff

=10

Ω

,ꢀdynamicꢀtest  

circuit in Figure E)  

(

I

C

=0.4mA)  

8

3.5  

E

off  

E

on  

E

off  

E

on  

E

ts  

E

ts  

7

3.0  

6

5

4

3

2

1

0

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

0

20  

40  

60  

80  

100  

120  

0

10  

20  

30  

40  

50  

60  

70  

I

C

,ꢀCOLLECTORꢀCURRENTꢀ[A]  

R

G

,ꢀGATEꢀRESISTANCEꢀ[

Ω

]  

Figure 11.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀcollectorꢀcurrent  

Figure 12.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀgateꢀresistance  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

CE

=400V,  

V

GE

=0/15V,ꢀ

R

Gon

=10

Ω

,ꢀ

R

Goff

=10

Ω

,ꢀdynamic  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

CE

=400V,  

V

GE

=0/15V,ꢀ

I

C

=40A,ꢀdynamicꢀtestꢀcircuitꢀin  

test circuit in Figure E)  

Figure E)  

Datasheet  

9

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

2.5  

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

E

off  

E

on  

E

ts  

E

off  

E

on  

E

ts  

2.0  

1.5  

1.0  

0.5  

0.0  

25  

50  

75  

100  

125  

150  

175  

200  

260  

320  

380  

440  

500  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

Figure 13.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀjunctionꢀtemperature  

Figure 14.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀcollectorꢀemitterꢀvoltage  

(inductiveꢀload,ꢀ

V

CE

=400V,ꢀ

V

GE

=0/15V,  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

GE

=0/15V,  

I

C

=40A,ꢀ

R

Gon

=10

Ω

,ꢀ

R

Goff

=10

Ω

,ꢀdynamicꢀtest  

circuit in Figure E)  

I

C

=40A,ꢀ

R

Gon

=10

Ω

,ꢀ

R

Goff

=10

Ω

,ꢀdynamicꢀtest  

circuit in Figure E)  

16  

14  

12  

10  

8

V

CC

ꢀ=ꢀ130V  

V

CC

ꢀ=ꢀ520V  

C

ies  

C

oes  

C

res  

1E+4  

1000  

100  

10  

6

4

2

0

1

0

20  

40  

60  

80  

100  

0

5

10  

15  

20  

25  

30  

Q

GE

,ꢀGATEꢀCHARGEꢀ[nC]  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

Figure 15.

Typicalꢀgateꢀcharge  

(

I

C

=40A)  

Figure 16.

Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  

collector-emitterꢀvoltage  

(

V

GE

=0V,ꢀf=1MHz)  

Datasheet  

10  

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

1

1

D = 0.5  

D = 0.5  

0.2  

0.1  

0.1  

0.2  

0.1  

0.1  

0.05  

0.02  

0.01  

0.05  

0.02  

0.01  

single pulse  

single pulse  

0.01  

0.01  

i:  

1

2

3

4

5

6

i:  

1

2

3

4

5

6

r

i

[K/W]: 7.6E-3 0.190913 0.291478 0.14581

 

0.012836 1.9E-3  

r

i

[K/W]: 0.010727 0.226517 0.343999 0.15413

 

0.013783 2.0E-3  

τ

i

[s]:  

1.5E-5 3.4E-4  

2.8E-3  

0.013837 0.211296 3.232888  

τ

i

[s]:  

1.6E-5  

3.5E-4  

2.7E-3  

0.014019 0.208472 3.051577  

0.001  

1E-6  

0.001  

1E-6  

1E-5  

1E-4  

0.001  

0.01  

0.1  

1

1E-5  

1E-4  

0.001  

0.01  

0.1  

1

t

p

,ꢀPULSEꢀWIDTHꢀ[s]  

t

p

,ꢀPULSEꢀWIDTHꢀ[s]  

Figure 17.

IGBTꢀtransientꢀthermalꢀimpedance  

(

D

=

t

p

/T)  

Figure 18.

Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  

functionꢀofꢀpulseꢀwidth  

(

D

=

t

p

/T)  

160  

3.0  

T

vj

= 25°C, I

F

= 40A  

T

vj

= 150°C, I

F

= 40A  

T

vj

= 25°C, I

F

= 40A  

T

vj

= 150°C, I

F

= 40A  

140  

120  

100  

80  

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

60  

40  

20  

0

400  

500  

600  

700  

800  

900  

1000  

400  

500  

600  

700  

800  

900  

1000  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

Figure 19.

Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction

Figure 20.

Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa  

ofꢀdiodeꢀcurrentꢀslope  

functionꢀofꢀdiodeꢀcurrentꢀslope  

(

V

R

=400V)  

(

V

R

=400V)  

Datasheet  

11  

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

40  

0

-300  

T

vj

= 25°C, I

F

= 40A  

T

vj

= 150°C, I

F

= 40A  

T

vj

= 25°C, I

F

= 40A  

T

vj

= 150°C, I

F

= 40A  

35  

30  

25  

20  

15  

10  

5

-600  

-900  

-1200  

-1500  

-1800  

-2100  

0

400  

500  

600  

700  

800  

900  

1000  

400  

500  

600  

700  

800  

900  

1000  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

Figure 21.

Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa  

functionꢀofꢀdiodeꢀcurrentꢀslope  

(

V

R

=400V)  

Figure 22.

Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse  

recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode  

currentꢀslope  

(

V

R

=400V)  

120  

2.50  

T

vj

= 25°C  

T

vj

= 150°C  

I

F

= 20A  

I

F

= 40A  

I

F

= 80A  

2.25  

100  

80  

60  

40  

20  

0

2.00  

1.75  

1.50  

1.25  

1.00  

0.75  

0.50  

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

25  

50  

75  

100  

125  

150  

175  

V

F

,ꢀFORWARDꢀVOLTAGEꢀ[V]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 23.

Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction

Figure 24.

Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  

ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature  

Datasheet  

12  

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

Package Drawing PG-TO263-3  

MIN  

4.30  

0.00  

0.65  

0.95  

0.33  

1.17  

8.51  

7.10  

9.80  

6.50  

MAX  

4.57  

0.25  

0.85  

1.15  

0.65  

1.40  

9.45  

7.90  

10.31  

8.60  

MIN  

MAX  

0.180  

0.010  

0.033  

0.045  

0.026  

0.055  

0.372  

0.311  

0.406  

0.339  

0.169  

0.000  

0.026  

0.037  

0.013  

0.046  

0.335  

0.280  

0.386  

0.256  

Z8B00003324  

0

5

5

0

2.54  

5.08  

2

0.100  

0.200  

2

7.5mm  

14.61  

2.29  

0.70  

1.00  

16.05  

9.30  

4.50  

10.70  

3.65  

1.25  

15.88  

3.00  

1.60  

1.78  

16.25  

9.50  

4.70  

10.90  

3.85  

1.45  

0.575  

0.090  

0.028  

0.039  

0.632  

0.366  

0.177  

0.421  

0.144  

0.049  

0.625  

0.118  

0.063  

0.070  

0.640  

0.374  

0.185  

0.429  

0.152  

0.057  

30-08-2007  

01  

Datasheet  

13  

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

Testing Conditions  

V

GE

(t)  

I,V  

90%

V

GE  

t

rr

=

t

a

+

t

b  

dI

F

/dt  

Q

rr

=

Q

a

+

Q

b  

a

b

10%

V

GE  

t

Q

a  

Q

b  

I

C

(t)  

dI  

90%

I

C  

90%

I

C  

10%

I

C  

10%

I

C  

Figure C.

Definition of diode switching  

characteristics  

t

V

CE

(t)  

t

t

t

d(off)  

t

f  

t

d(on)  

t

r  

Figure A.  

V

GE

(t)  

90%

V

GE  

Figure D.  

10%

V

GE  

t

I

C

(t)  

CC  

2%

I

C  

t

V

CE

(t)  

Figure E.

 

Dynamic test circuit  

Parasitic inductance L

 

,  

parasitic capacitor C

 

,  

s

s

relief capacitor C ,  

(only for ZVT switching)  

r

t

2  

t

4  

E

=

V

CE

x

I

C

x d

t  

E

=

V

CE

x

I

C

x d

t  

off  

on  

2%

V

CE  

t

1  

t

3  

t

t

1  

t

2  

t

3  

t

4  

Figure B.  

Datasheet  

14  

Vꢀ2.1  

2018-04-04  

IKB40N65ES5  

Highꢀspeedꢀswitchingꢀseriesꢀ5

th

ꢀgeneration  

RevisionꢀHistory  

IKB40N65ES5  

Revision:ꢀ2018-04-04,ꢀRev.ꢀ2.1  

Previous Revision  

Revision Date  

Subjects (major changes since last revision)  

2.1  

2018-04-04 Final

 

data sheet  

Datasheet  

15  

Vꢀ2.1  

2018-04-04  

Trademarks  

Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  

ꢀ

ꢀ

ꢀ

ꢀ

Publishedꢀby  

InfineonꢀTechnologiesꢀAG  

81726ꢀMünchen,ꢀGermany  

©ꢀInfineonꢀTechnologiesꢀAGꢀ2018.  

AllꢀRightsꢀReserved.  

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