Infineon-Technologies-IKD03N60RF

IGBT  

IGBTꢀwithꢀintegratedꢀdiodeꢀinꢀpackagesꢀofferingꢀspaceꢀsavingꢀadvantage  

IKD03N60RF  

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TM

ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplicationsꢀupꢀtoꢀ30ꢀkHz  

Dataꢀsheet  

IndustrialꢀPowerꢀControl  

IKD03N60RF  

TRENCHSTOP

TM

ꢀRC-DrivesꢀFastꢀSeries  

IGBTꢀwithꢀintegratedꢀdiodeꢀinꢀpackagesꢀofferingꢀspaceꢀsavingꢀadvantage  

ꢀ

C

E

Features:  

TRENCHSTOP

TM

ꢀReverseꢀConductingꢀ(RC)ꢀtechnologyꢀforꢀ600V  

applicationsꢀoffering  

•ꢀOptimizedꢀEon,ꢀEoffꢀandꢀQrrꢀforꢀlowꢀswitchingꢀlosses  

•ꢀOperatingꢀrangeꢀofꢀ4ꢀtoꢀ30kHz  

•ꢀSmoothꢀswitchingꢀperformanceꢀleadingꢀtoꢀlowꢀEMIꢀlevels  

•ꢀVeryꢀtightꢀparameterꢀdistribution  

G

•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C  

•ꢀShortꢀcircuitꢀcapabilityꢀofꢀ5µs  

•ꢀBestꢀinꢀclassꢀcurrentꢀversusꢀpackageꢀsizeꢀperformance  

•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications  

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliantꢀ(solderꢀtemperature  

260°C,ꢀMSL1)  

C

CompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  

G

Applications:  

E

Domesticꢀandꢀindustrialꢀdrives:  

•ꢀCompressors  

•ꢀPumps  

•ꢀFans  

KeyꢀPerformanceꢀandꢀPackageꢀParameters  

Type  

V

CE  

I

C  

V

CEsat

,ꢀ

T

vj

=25°C

T

vjmax  

2.2V 175°C  

Marking  

Package  

IKD03N60RF  

600V  

2.5A  

K03R60F  

PG-TO252-3  

2

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ꢀRC-DrivesꢀFastꢀSeries  

TableꢀofꢀContents  

Description .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  

Table of Contents

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  

Maximum Ratings

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

4  

Thermal Resistance

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

4  

Electrical Characteristics

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  

Electrical Characteristics Diagrams

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

8  

Package Drawing

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

.

15  

Testing Conditions

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  

Revision History

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

.

1

7  

Disclaimer .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17  

3

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ꢀRC-DrivesꢀFastꢀSeries  

MaximumꢀRatings  

Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.  

Parameter  

Symbol  

Value  

Unit  

Collector-emitterꢀvoltage,ꢀ

T

vj

ꢀ

≥

ꢀ25°C  

V

CE  

600  

V

DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ

T

vjmax  

T

C

ꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire  

T

C

ꢀ=ꢀ100°C  

I

C  

6.5  

6.0  

A

Pulsedꢀcollectorꢀcurrent,ꢀ

t

p

ꢀlimitedꢀbyꢀ

T

vjmax  

I

Cpuls  

7.5  

7.5  

A

A

Turn off safe operating area  

V

CE

ꢀ

≤

ꢀ600V,ꢀ

T

vj

ꢀ

≤

ꢀ175°C,ꢀ

t

p

ꢀ=ꢀ1µs  

–

Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ

T

vjmax  

T

C

ꢀ=ꢀ25°C  

T

C

ꢀ=ꢀ100°C  

I

F  

6.3  

3.9  

A

Diodeꢀpulsedꢀcurrent,ꢀ

t

p

ꢀlimitedꢀbyꢀ

T

vjmax  

I

Fpuls  

V

GE  

7.5  

A

V

Gate-emitter voltage  

±20  

Short circuit withstand time  

V

GE

ꢀ=ꢀ15.0V,ꢀ

V

CC

ꢀ

≤

ꢀ400V  

Allowed number of short circuits < 1000  

Time between short circuits:

≥

1.0s  

T

vj

ꢀ=ꢀ150°C  

t

SC  

µs  

5

Powerꢀdissipationꢀ

T

C

ꢀ=ꢀ25°C  

Operating junction temperature  

Storage temperature  

P

tot  

T

vj  

53.6  

W

°C  

°C  

-40…+175  

-55…+150  

T

stg  

Soldering temperature,  

reflow soldering (MSL1 according to JEDEC J-STA-020)  

°C  

260  

ThermalꢀResistance  

Value  

min. typ. max.  

Parameter  

Symbol Conditions  

Unit  

R

th

ꢀCharacteristics  

IGBT thermal resistance,

1)  

junction – case  

Diode thermal resistance,

2)  

junction – case  

R

th(j-c)  

R

th(j-c)  

R

th(j-a)  

–

–

–

–

–

–

2.80 K/W  

6.80 K/W  

75 K/W  

Thermal resistance, min. footprint  

junction – ambient  

Thermal resistance, 6cm² Cu on  

PCB  

R

th(j-a)  

–

–

50 K/W  

junction – ambient  

4

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ꢀRC-DrivesꢀFastꢀSeries  

ElectricalꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

StaticꢀCharacteristic  

Collector-emitter breakdown voltage

V

(BR)CES

V

GE

ꢀ=ꢀ0V,ꢀ

I

C

ꢀ=ꢀ0.20mA  

V

GE

ꢀ=ꢀ15.0V,ꢀ

I

C

ꢀ=ꢀ2.5A  

600  

–

–

V

V

Collector-emitter saturation voltage

 

V

CEsat  

T

vj

ꢀ=ꢀ25°C  

–

–

2.20 2.50  

2.30  

T

vj

ꢀ=ꢀ175°C  

–

V

GE

ꢀ=ꢀ0V,ꢀ

I

F

ꢀ=ꢀ2.5A  

T

vj

ꢀ=ꢀ25°C  

T

vj

ꢀ=ꢀ175°C  

Diode forward voltage  

V

F  

–

–

2.10 2.40  

V

V

2.00  

–

Gate-emitter threshold voltage  

V

GE(th)  

I

C

ꢀ=ꢀ0.05mA,ꢀ

V

CE

ꢀ=ꢀ

V

GE  

4.3  

5.0  

5.7  

V

CE

ꢀ=ꢀ600V,ꢀ

V

GE

ꢀ=ꢀ0V  

T

vj

ꢀ=ꢀ25°C  

T

vj

ꢀ=ꢀ175°C  

Zero gate voltage collector current

1)

I

CES  

–

–

–

–

40  

1000  

µA  

Gate-emitter leakage current  

Transconductance  

I

GES  

g

fs  

V

CE

ꢀ=ꢀ0V,ꢀ

V

GE

ꢀ=ꢀ20V  

V

CE

ꢀ=ꢀ20V,ꢀ

I

C

ꢀ=ꢀ2.5A  

–

–

–

100  

–

nA  

S

1.3  

Integrated gate resistor  

r

G  

none  

Ω

ElectricalꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

DynamicꢀCharacteristic  

Input capacitance  

C

ies  

–

–

–

200  

13  

7

–

–

–

Output capacitance  

C

oes  

C

res  

V

CE

ꢀ=ꢀ25V,ꢀ

V

GE

ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  

pF  

Reverse transfer capacitance  

V

CC

ꢀ=ꢀ480V,ꢀ

I

C

ꢀ=ꢀ2.5A,  

V

GE

ꢀ=ꢀ15V  

Gate charge  

Q

G  

L

E  

–

–

17.1  

7.0  

–

–

nC  

nH  

Internal emitter inductance  

measured 5mm (0.197 in.) from  

case  

Short circuit collector current  

Max. 1000 short circuits  

Time between short circuits:

≥

1.0s  

V

GE

ꢀ=ꢀ15.0V,ꢀ

V

CC

ꢀ

≤

ꢀ400V,  

t

SC

ꢀ

≤

ꢀ5µs  

T

vj

ꢀ=ꢀ25°C  

I

C(SC)  

–

–

A

23  

5

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ꢀRC-DrivesꢀFastꢀSeries  

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

IGBTꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

10  

8

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ25°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ2.5A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

R

G(on)

ꢀ=ꢀ68.0

Ω

,ꢀ

R

G(off)

ꢀ=ꢀ68.0

Ω

,  

L

σ

ꢀ=ꢀ60nH,ꢀ

C

σ

ꢀ=ꢀ40pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

Turn-off delay time  

Fall time  

128  

93  

ns  

ns  

Turn-on energy  

E

on  

E

off  

E

ts  

0.05  

0.04  

0.09  

mJ  

mJ  

mJ  

Turn-off energy  

Total switching energy  

DiodeꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

31  

0.06  

3.8  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ25°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ2.5A,  

Q

rr  

Diode peak reverse recovery current

I

rrm  

di

F

/dt

ꢀ=ꢀ470A/µs  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-196  

–

A/µs  

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

IGBTꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ175°C  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

9

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ175°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ2.5A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

R

G(on)

ꢀ=ꢀ68.0

Ω

,ꢀ

R

G(off)

ꢀ=ꢀ68.0

Ω

,  

L

σ

ꢀ=ꢀ60nH,ꢀ

C

σ

ꢀ=ꢀ40pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

9

Turn-off delay time  

Fall time  

142  

123  

0.08  

0.06  

0.14  

ns  

ns  

Turn-on energy  

E

on  

E

off  

E

ts  

mJ  

mJ  

mJ  

Turn-off energy  

Total switching energy  

DiodeꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ175°C  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

66  

0.19  

6.2  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ175°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ2.5A,  

Q

rr  

Diode peak reverse recovery current

I

rrm  

di

F

/dt

ꢀ=ꢀ470A/µs  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-125  

–

A/µs  

6

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ꢀRC-DrivesꢀFastꢀSeries  

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

10  

not for linear use  

Ta=55°C  

1

0.1  

0.1  

1

10  

100  

1

10  

100  

1000  

f

,ꢀSWITCHINGꢀFREQUENCYꢀ[kHz]  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

Figure 1.

Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀswitching  

frequency  

Figure 2.

Forwardꢀbiasꢀsafeꢀoperatingꢀarea  

(

D

=0,ꢀ

T

C

=25°C,ꢀ

T

vj

≤

175°C;ꢀ

V

GE

=15V)  

(

T

vj

≤

175°C,ꢀ

T

a

=55°C,ꢀ

D

=0.5,ꢀ

V

CE

=400V,  

V

GE

=0/15V,ꢀ

R

G

=68

Ω

,ꢀPCBꢀmounting,ꢀ6cm2  

Cu, Ptot=2,4W)  

60  

50  

40  

30  

20  

10  

0

7

6

limited by bond wire  

5

4

3

2

1

0

25  

50  

75  

100  

125  

150  

175  

0

25  

50  

75  

100  

125  

150  

175  

T

C

,ꢀCASEꢀTEMPERATUREꢀ[°C]  

T

C

,ꢀCASEꢀTEMPERATUREꢀ[°C]  

Figure 3.

Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  

Figure 4.

Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  

temperature  

temperature  

(

T

vj

≤

175°C)  

(

V

GE

≥

15V,ꢀ

T

vj

≤

175°C)  

7

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ꢀRC-DrivesꢀFastꢀSeries  

9

8

7

6

5

4

3

2

1

0

9

8

7

6

5

4

3

2

1

0

V

GE

= 20V  

17V  

V

GE

= 20V  

17V  

15V  

15V  

13V  

13V  

11V  

11V  

9V  

9V  

7V  

7V  

0

1

2

3

4

0

1

2

3

4

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

Figure 5.

Typicalꢀoutputꢀcharacteristic  

(

T

vj

=25°C)  

Figure 6.

Typicalꢀoutputꢀcharacteristic  

(

T

vj

=175°C)  

9

4.0  

T

vj

= 25°C  

T

vj

= 175°C  

I

C

= 0.6A  

I

C

= 1A  

8

I

C

= 2.5A  

I

C

= 5A  

3.5  

3.0  

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

7

6

5

4

3

2

1

0

4

6

8

10  

12  

14  

0

25  

50  

75  

100  

125  

150  

175  

V

GE

,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 7.

Typicalꢀtransferꢀcharacteristic  

(

V

CE

=10V)  

Figure 8.

Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas  

aꢀfunctionꢀofꢀjunctionꢀtemperature  

(

V

GE

=15V)  

8

Rev.ꢀ2.6,ꢀꢀ2016-05-10  

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ꢀRC-DrivesꢀFastꢀSeries  

t

d(off)  

t

f  

t

d(on)  

t

r  

100  

10  

1

100  

10  

1

t

d(off)  

t

f  

t

d(on)  

t

r  

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

3.5  

4.0  

10 20 30 40 50 60 70 80 90

 

100 110 120  

I

C

,ꢀCOLLECTORꢀCURRENTꢀ[A]  

R

G

,ꢀGATEꢀRESISTANCEꢀ[

Ω

]  

Figure 9.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  

collectorꢀcurrent  

Figure 10.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate  

resistance  

(inductiveꢀload,ꢀ

T

vj

=175°C,ꢀ

V

CE

=400V,  

V

GE

=0/15V,ꢀ

R

Gon

=68

Ω

,ꢀ

R

Goff

=68

Ω

,ꢀdynamic  

test circuit in Figure E)  

(inductiveꢀload,ꢀ

T

vj

=175°C,ꢀ

V

CE

=400V,  

V

GE

=0/15V,ꢀ

I

C

=2,5A,ꢀdynamicꢀtestꢀcircuitꢀin  

Figure E)  

7

t

d(off)  

t

f  

t

d(on)  

t

r  

typ.  

min.  

max.  

6

5

4

3

2

1

100  

10  

1

25  

50  

75  

100  

125  

150  

175  

25  

50  

75  

100  

125  

150  

175  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 11.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  

junctionꢀtemperature  

Figure 12.

Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction  

ofꢀjunctionꢀtemperature  

(inductiveꢀload,ꢀ

V

CE

=400V,ꢀ

V

GE

=0/15V,  

I

C

=2,5A,ꢀ

R

Gon

=68

Ω

,ꢀ

R

Goff

=68

Ω

,ꢀdynamicꢀtest  

circuit in Figure E)  

(

I

C

=0,05mA)  

9

Rev.ꢀ2.6,ꢀꢀ2016-05-10  

IKD03N60RF  

TRENCHSTOP

TM

ꢀRC-DrivesꢀFastꢀSeries  

0.25  

0.20  

0.15  

0.10  

0.05  

0.00  

0.20  

0.18  

0.16  

0.14  

0.12  

0.10  

0.08  

0.06  

0.04  

0.02  

0.00  

E

off  

E

on  

E

ts  

E

off  

E

on  

E

ts  

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

3.5  

4.0  

10 20 30 40 50 60 70 80 90

 

100 110 120  

I

C

,ꢀCOLLECTORꢀCURRENTꢀ[A]  

R

G

,ꢀGATEꢀRESISTANCEꢀ[

Ω

]  

Figure 13.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀcollectorꢀcurrent  

Figure 14.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀgateꢀresistance  

(inductiveꢀload,ꢀ

T

vj

=175°C,ꢀ

V

CE

=400V,  

V

GE

=0/15V,ꢀ

R

Gon

=68

Ω

,ꢀ

R

Goff

=68

Ω

,ꢀdynamic  

test circuit in Figure E)  

(inductiveꢀload,ꢀ

T

vj

=175°C,ꢀ

V

CE

=400V,  

V

GE

=0/15V,ꢀ

I

C

=2,5A,ꢀdynamicꢀtestꢀcircuitꢀin  

Figure E)  

0.16  

0.14  

0.12  

0.10  

0.08  

0.06  

0.04  

0.02  

0.00  

0.18  

E

off  

E

on  

E

ts  

E

off  

E

on  

E

ts  

0.16  

0.14  

0.12  

0.10  

0.08  

0.06  

0.04  

0.02  

0.00  

25  

50  

75  

100  

125  

150  

175  

200  

250  

300  

350  

400  

450  

500  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

Figure 15.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀjunctionꢀtemperature  

Figure 16.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀcollectorꢀemitterꢀvoltage  

(inductiveꢀload,ꢀ

V

CE

=400V,ꢀ

V

GE

=0/15V,  

(inductiveꢀload,ꢀ

T

vj

=175°C,ꢀ

V

GE

=0/15V,  

I

C

=2,5A,ꢀ

R

Gon

=68

Ω

,ꢀ

R

Goff

=68

Ω

,ꢀdynamicꢀtest  

circuit in Figure E)  

I

C

=2,5A,ꢀ

R

Gon

=68

Ω

,ꢀ

R

Goff

=68

Ω

,ꢀdynamicꢀtest  

circuit in Figure E)  

10  

Rev.ꢀ2.6,ꢀꢀ2016-05-10  

IKD03N60RF  

TRENCHSTOP

TM

ꢀRC-DrivesꢀFastꢀSeries  

18  

16  

14  

12  

10  

8

1000  

100  

10  

V

CC

ꢀ=ꢀ120V  

V

CC

ꢀ=ꢀ480V  

C

ies  

C

oes  

C

res  

6

4

2

0

1

0

2

4

6

8

10  

12  

14  

16  

18  

0

5

10  

15  

20  

25  

30  

Q

GE

,ꢀGATEꢀCHARGEꢀ[nC]  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

Figure 17.

Typicalꢀgateꢀcharge  

(

I

C

=2,5A)  

Figure 18.

Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  

collector-emitterꢀvoltage  

(

V

GE

=0V,ꢀf=1MHz)  

50  

45  

40  

35  

30  

25  

20  

15  

10  

5

12  

10  

8

6

4

2

0

0

12  

13  

14  

15  

16  

17  

18  

19  

20  

10  

11  

12  

13  

14  

15  

16  

17  

18  

19  

V

GE

,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  

V

GE

,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  

Figure 19.

Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa  

functionꢀofꢀgate-emitterꢀvoltage  

Figure 20.

Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof  

gate-emitterꢀvoltage  

(

V

CE

≤

400V,ꢀstartꢀatꢀ

T

vj

=25°C)  

(

V

CE

≤

400V,ꢀstartꢀatꢀ

T

vj

=150°C)  

11  

Rev.ꢀ2.6,ꢀꢀ2016-05-10  

IKD03N60RF  

TRENCHSTOP

TM

ꢀRC-DrivesꢀFastꢀSeries  

1

D = 0.5  

0.2  

D = 0.5  

0.2  

1

0.1  

0.1  

0.05  

0.05  

0.02  

0.02  

0.01  

0.01  

single pulse  

single pulse  

0.1  

0.1  

i:  

r

i

[K/W]: 0.015751 1.14785 1.341315 0.237182 0.041914 6.2E-3  

τ

i

[s]: 1.2E-5 2.3E-4

 

1.1E-3 6.0E-3  

1

2

3

4

5

6

7

i:  

1

2

3

4

5

6

7

2.2E-3  

r

i

[K/W]: 0.600659 4.018125 1.846211 0.289559 0.043754 6.0E-3  

τ

i

[s]: 4.2E-5 1.9E-4 1.1E-3 6.1E-3  

2.1E-3  

0.047561 0.288161 1.246755  

0.048469 0.301349 1.300555  

0.01  

0.01  

1E-7 1E-6 1E-5 1E-4

 

0.001 0.01  

0.1  

1

1E-7 1E-6 1E-5 1E-4

 

0.001 0.01  

0.1  

1

t

p

,ꢀPULSEꢀWIDTHꢀ[s]  

t

p

,ꢀPULSEꢀWIDTHꢀ[s]  

Figure 21.

IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa  

functionꢀofꢀpulseꢀwidthꢀ

1)

ꢀ(seeꢀpageꢀ4)  

(

D

=

t

p

/T)  

Figure 22.

Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  

functionꢀofꢀpulseꢀwidthꢀ

2)

ꢀ(seeꢀpageꢀ4)  

(

D

=

t

p

/T)  

80  

0.20  

0.18  

0.16  

T

vj

= 25°C, I

F

= 2.5A  

T

vj

= 175°C, I

F

= 2.5A  

70  

60  

50  

40  

30  

20  

10  

0

0.14  

T

vj

= 25°C, I

F

= 2.5A  

T

vj

= 175°C, I

F

= 2.5A  

0.12  

0.10  

0.08  

0.06  

0.04  

0.02  

0.00  

400  

500  

600  

700  

800  

900  

1000  

400  

500  

600  

700  

800  

900  

1000  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

Figure 23.

Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction

Figure 24.

Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa  

ofꢀdiodeꢀcurrentꢀslope  

functionꢀofꢀdiodeꢀcurrentꢀslope  

(

V

R

=400V)  

(

V

R

=400V)  

12  

Rev.ꢀ2.6,ꢀꢀ2016-05-10  

IKD03N60RF  

TRENCHSTOP

TM

ꢀRC-DrivesꢀFastꢀSeries  

10  

9

0

-100  

-200  

-300  

-400  

-500  

-600  

T

vj

= 25°C, I

F

= 2.5A  

T

vj

= 175°C, I

F

= 2.5A  

T

vj

= 25°C, I

F

= 2.5A  

T

vj

= 175°C, I

F

= 2.5A  

8

7

6

5

4

3

2

400  

500  

600  

700  

800  

900  

1000  

400  

500  

600  

700  

800  

900  

1000  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

Figure 25.

Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa  

functionꢀofꢀdiodeꢀcurrentꢀslope  

(

V

R

=400V)  

Figure 26.

Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse  

recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode  

currentꢀslope  

(

V

R

=400V)  

9

2.8  

2.6  

T

vj

= 25°C, V

GE

= 0V  

T

vj

= 175°C, V

GE

= 0V  

8

7

6

5

4

3

2

1

0

2.4  

2.2  

2.0  

1.8  

1.6  

1.4  

1.2  

1.0  

I

F

= 0.6A  

I

F

= 1A  

I

F

= 2.5A  

I

F

= 5A  

0

1

2

3

4

0

25  

50  

75  

100  

125  

150  

175  

V

F

,ꢀFORWARDꢀVOLTAGEꢀ[V]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 27.

Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction

Figure 28.

Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  

ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature  

13  

Rev.ꢀ2.6,ꢀꢀ2016-05-10  

IKD03N60RF  

TRENCHSTOP

TM

ꢀRC-DrivesꢀFastꢀSeries  

Package Drawing PG-TO252-3  

14  

Rev.ꢀ2.6,ꢀꢀ2016-05-10  

IKD03N60RF  

TRENCHSTOP

TM

ꢀRC-DrivesꢀFastꢀSeries  

Testing Conditions  

V

GE

(t)  

I,V  

90%

V

GE  

t

rr

=

t

a

+

t

b  

dI

F

/dt  

Q

rr

=

Q

a

+

Q

b  

a

b

10%

V

GE  

t

Q

a  

Q

b  

I

C

(t)  

dI  

90%

I

C  

90%

I

C  

10%

I

C  

10%

I

C  

Figure C.

Definition of diode switching  

characteristics  

t

V

CE

(t)  

t

t

t

d(off)  

t

f  

t

d(on)  

t

r  

Figure A.  

V

GE

(t)  

90%

V

GE  

Figure D.  

10%

V

GE  

t

I

C

(t)  

CC  

2%

I

C  

t

V

CE

(t)  

Figure E.

 

Dynamic test circuit  

Parasitic inductance L

 

,  

parasitic capacitor C

 

,  

s

s

relief capacitor C ,  

(only for ZVT switching)  

r

t

2  

t

4  

E

=

V

CE

x

I

C

x d

t  

E

=

V

CE

x

I

C

x d

t  

off  

on  

2%

V

CE  

t

1  

t

3  

t

t

1  

t

2  

t

3  

t

4  

Figure B.  

15  

Rev.ꢀ2.6,ꢀꢀ2016-05-10  

IKD03N60RF  

TRENCHSTOP

TM

ꢀRC-DrivesꢀFastꢀSeries  

RevisionꢀHistory  

IKD03N60RF  

Revision:ꢀ2016-05-10,ꢀRev.ꢀ2.6  

Previous Revision  

Revision Date  

Subjects (major changes since last revision)  

2011-06-07 Preliminary

 

Data sheet  

2012-02-23 Final

 

data sheet  

1.1  

2.2  

2.3  

2.4  

2.5  

2.6  

2013-12-10 New

 

value ICES max limit at 175°C  

2014-02-26 Without

 

PB free logo  

2014-03-12 Storage

 

temperature -55…+150°C  

2016-05-10 New

 

maximum values Ic(Tc), I

F

(Tc) and Figure 4  

Publishedꢀby  

InfineonꢀTechnologiesꢀAG  

81726ꢀMünchen,ꢀGermany  

©ꢀInfineonꢀTechnologiesꢀAGꢀ2016.  

AllꢀRightsꢀReserved.  

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(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany  

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party.  

Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  

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16  

Rev.ꢀ2.6,ꢀꢀ2016-05-10