Infineon-Technologies-IKD06N60RF
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IGBT
IGBTꢀwithꢀintegratedꢀdiodeꢀinꢀpackagesꢀofferingꢀspaceꢀsavingꢀadvantage
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplicationsꢀupꢀtoꢀ30ꢀkHz
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
IGBTꢀwithꢀintegratedꢀdiodeꢀinꢀpackagesꢀofferingꢀspaceꢀsavingꢀadvantage
ꢀ
C
E
Features:
TRENCHSTOP
TM
ꢀReverseꢀConductingꢀ(RC)ꢀtechnologyꢀforꢀ600V
applicationsꢀoffering
•ꢀOptimizedꢀEon,ꢀEoffꢀandꢀQrrꢀforꢀlowꢀswitchingꢀlosses
•ꢀOperatingꢀrangeꢀofꢀ4ꢀtoꢀ30kHz
•ꢀSmoothꢀswitchingꢀperformanceꢀleadingꢀtoꢀlowꢀEMIꢀlevels
•ꢀVeryꢀtightꢀparameterꢀdistribution
G
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀShortꢀcircuitꢀcapabilityꢀofꢀ5µs
•ꢀBestꢀinꢀclassꢀcurrentꢀversusꢀpackageꢀsizeꢀperformance
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliantꢀ(solderꢀtemperature
260°C,ꢀMSL1)
C
CompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
G
Applications:
E
Domesticꢀandꢀindustrialꢀdrives:
•ꢀCompressors
•ꢀPumps
•ꢀFans
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
V
CE
I
C
V
CEsat
,ꢀ
T
vj
=25°C
T
vjmax
2.2V 175°C
Marking
Package
IKD06N60RF
600V
6A
K06R60F
PG-TO252-3
Datasheet
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
14
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
6
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Datasheet
3
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀ
T
vj
ꢀ
≥
ꢀ25°C
V
CE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
c
ꢀ=ꢀ25°C
T
c
ꢀ=ꢀ100°C
I
C
12.0
6.0
A
Pulsedꢀcollectorꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Cpuls
18.0
18.0
A
A
Turn off safe operating area
V
CE
ꢀ
≤
ꢀ600V,ꢀ
T
vj
ꢀ
≤
ꢀ175°C,ꢀ
t
p
ꢀ=ꢀ1µs
–
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
c
ꢀ=ꢀ25°C
T
c
ꢀ=ꢀ100°C
I
F
12.0
6.0
A
Diodeꢀpulsedꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Fpuls
V
GE
18.0
±20
A
V
Gate-emitter voltage
Short circuit withstand time
V
GE
ꢀ=ꢀ15.0V,ꢀ
V
CC
ꢀ
≤
ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
ꢀ=ꢀ150°C
t
SC
µs
5
Powerꢀdissipationꢀ
T
c
ꢀ=ꢀ25°C
Operating junction temperature
Storage temperature
P
tot
T
vj
100.0
W
°C
°C
-40…+175
-55…+150
T
stg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
R
th
ꢀCharacteristics
IGBT thermal resistance,
1)
junction – case
Diode thermal resistance,
2)
junction – case
R
th(j-c)
R
th(j-c)
R
th(j-a)
–
–
–
–
–
–
1.50 K/W
3.60 K/W
75 K/W
Thermal resistance, min. footprint
junction – ambient
Thermal resistance, 6cm² Cu on
PCB
R
th(j-a)
–
–
50 K/W
junction – ambient
1)
Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
2)
Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
Datasheet
4
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
ꢀ=ꢀ0V,ꢀ
I
C
ꢀ=ꢀ0.20mA
V
GE
ꢀ=ꢀ15.0V,ꢀ
I
C
ꢀ=ꢀ6.0A
600
–
–
V
V
Collector-emitter saturation voltage
V
CEsat
T
vj
ꢀ=ꢀ25°C
–
–
2.20 2.50
2.30
T
vj
ꢀ=ꢀ175°C
–
V
GE
ꢀ=ꢀ0V,ꢀ
I
F
ꢀ=ꢀ6.0A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Diode forward voltage
V
F
–
–
2.10 2.40
V
V
2.00
–
Gate-emitter threshold voltage
V
GE(th)
I
C
ꢀ=ꢀ0.11mA,ꢀ
V
CE
ꢀ=ꢀ
V
GE
4.3
5.0
5.7
V
CE
ꢀ=ꢀ600V,ꢀ
V
GE
ꢀ=ꢀ0V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Zero gate voltage collector current
1)
I
CES
–
–
–
–
40
1000
µA
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
ꢀ=ꢀ0V,ꢀ
V
GE
ꢀ=ꢀ20V
V
CE
ꢀ=ꢀ20V,ꢀ
I
C
ꢀ=ꢀ6.0A
–
–
–
100
–
nA
S
2.9
Integrated gate resistor
r
G
none
Ω
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
C
ies
–
–
–
470
24
–
–
–
Output capacitance
C
oes
C
res
V
CE
ꢀ=ꢀ25V,ꢀ
V
GE
ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
14
V
CC
ꢀ=ꢀ480V,ꢀ
I
C
ꢀ=ꢀ6.0A,
V
GE
ꢀ=ꢀ15V
Gate charge
Q
G
L
E
–
–
48.0
7.0
–
–
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits:
≥
1.0s
V
GE
ꢀ=ꢀ15.0V,ꢀ
V
CC
ꢀ
≤
ꢀ400V,
t
SC
ꢀ
≤
ꢀ5µs
T
vj
ꢀ=ꢀ25°C
I
C(SC)
–
–
A
46
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
7
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ6.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ23.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ23.0
Ω
,
L
σ
ꢀ=ꢀ50nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
8
Turn-off delay time
Fall time
106
22
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.09
0.09
0.18
mJ
mJ
mJ
Turn-off energy
Total switching energy
1)
Not subject to production test – verified by design/characterization
Datasheet
5
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
48
0.16
7.4
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ25°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ6.0A,
Q
rr
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ770A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-195
–
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
8
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ175°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ6.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ23.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ23.0
Ω
,
L
σ
ꢀ=ꢀ50nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
8
Turn-off delay time
Fall time
115
35
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.15
0.13
0.28
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
74
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ175°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ6.0A,
Q
rr
0.34
10.3
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ770A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-177
–
A/µs
Datasheet
6
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
t
p
=10µs
20µs
50µs
1
100µs
200µs
500µs
DC
0.1
0.1
1
10
100
1
10
100
1000
f
,ꢀSWITCHINGꢀFREQUENCYꢀ[kHz]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 1.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀswitching
frequency
Figure 2.
Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(
D
=0,ꢀ
T
C
=25°C,ꢀ
T
vj
≤
175°C;ꢀ
V
GE
=15V)
(
T
vj
≤
175°C,ꢀ
T
a
=55°C,ꢀ
D
=0.5,ꢀ
V
CE
=400V,
V
GE
=15/0V,ꢀ
r
G
=23
Ω
,ꢀPCBꢀmounting,ꢀ6cm
2
Cu,
Ptot=2,4W)
100
90
80
70
60
50
40
30
20
10
0
14
12
10
8
6
4
2
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 3.
Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 4.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(
T
vj
≤
175°C)
(
V
GE
≥
15V,ꢀ
T
vj
≤
175°C)
Datasheet
7
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
18
18
16
14
12
10
8
V
GE
=20V
16
17V
15V
V
GE
=20V
17V
15V
13V
11V
9V
14
13V
12
11V
9V
10
7V
8
7V
6
4
2
0
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 5.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=25°C)
Figure 6.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=175°C)
18
4.0
T
j
=25°C
T
j
=175°C
I
C
=0.5A
I
C
=3A
16
I
C
=6A
I
C
=12A
3.5
14
12
10
8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
4
2
0
4
5
6
7
8
9
10
11
12
0
25
50
75
100
125
150
175
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7.
Typicalꢀtransferꢀcharacteristic
(
V
CE
=10V)
Figure 8.
Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(
V
GE
=15V)
Datasheet
8
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
t
d(off)
t
f
t
d(on)
t
r
100
100
10
1
t
d(off)
t
f
t
d(on)
t
r
10
1
3
4
5
6
7
8
9
10
11
12
10
20
30
40
50
60
70
80
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
r
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
Figure 9.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 10.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=400V,
V
GE
=15/0V,ꢀ
r
G
=23
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=400V,
V
GE
=15/0V,ꢀ
I
C
=6A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
6.0
typ.
min.
max.
5.5
100
t
d(off)
t
f
5.0
4.5
4.0
3.5
3.0
2.5
2.0
t
d(on)
t
r
10
1
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 11.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 12.
Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
I
C
=6A,ꢀ
r
G
=23
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(
I
C
=0,11mA)
Datasheet
9
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
0.6
0.5
0.4
0.3
0.2
0.1
0.0
E
off
E
on
E
ts
E
off
E
on
E
ts
0.5
0.4
0.3
0.2
0.1
0.0
3
4
5
6
7
8
9
10
11
12
10
20
30
40
50
60
70
80
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
r
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
Figure 13.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 14.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=400V,
V
GE
=15/0V,ꢀ
r
G
=23
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=400V,
V
GE
=15/0V,ꢀ
I
C
=6A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
0.30
0.4
E
off
E
on
E
ts
E
off
E
on
E
ts
0.25
0.20
0.15
0.10
0.05
0.00
0.3
0.2
0.1
0.0
25
50
75
100
125
150
175
300
325
350
375
400
425
450
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
I
C
=6A,ꢀ
r
G
=23
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 16.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
GE
=15/0V,
I
C
=6A,ꢀ
r
G
=23
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
10
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
16
1000
100
10
120V
480V
14
12
10
8
C
ies
C
oes
C
res
6
4
2
0
1
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Q
GE
,ꢀGATEꢀCHARGEꢀ[nC]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 17.
Typicalꢀgateꢀcharge
(
I
C
=6A)
Figure 18.
Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(
V
GE
=0V,ꢀf=1MHz)
90
80
70
60
50
40
30
20
10
0
12
10
8
6
4
2
0
12
14
16
18
20
10
11
12
13
14
15
16
17
18
19
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 19.
Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 20.
Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(
V
CE
≤
400V,ꢀstartꢀatꢀ
T
vj
=25°C)
(
V
CE
≤
400V,ꢀstartꢀatꢀ
T
vj
=150°C)
Datasheet
11
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
1
1
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.05
0.02
0.01
single pulse
single pulse
0.1
0.1
i:
r
i
[K/W]: 0.1032 0.7299 0.5682 0.0638
τ
i
[s]: 7.9E-5
4.0E-4 1.8E-3 0.0307
1
2
3
4
i:
r
i
[K/W]: 1.0958 1.6643 0.7461 0.0827
τ
i
[s]: 7.9E-5
2.8E-4 1.7E-3 0.02494
1
2
3
4
0.01
0.01
1E-7 1E-6 1E-5 1E-4
0.001 0.01
0.1
1
1E-7 1E-6 1E-5 1E-4
0.001 0.01
0.1
1
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
Figure 21.
IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidthꢀ
1)
ꢀ(seeꢀpageꢀ4)
(
D
=
t
p
/T)
Figure 22.
Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidthꢀ
2)
ꢀ(seeꢀpageꢀ4)
(
D
=
t
p
/T)
120
0.6
0.5
T
j
=25°C, I
F
= 6A
T
j
=175°C, I
F
= 6A
100
80
60
40
20
0
T
j
=25°C, I
F
= 6A
T
j
=175°C, I
F
= 6A
0.4
0.3
0.2
0.1
0.0
500
600
700
800
900
500
600
700
800
900
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23.
Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
Figure 24.
Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
(
V
R
=400V)
Datasheet
12
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
12
0
-50
T
j
=25°C, I
F
= 6A
T
j
=175°C, I
F
= 6A
T
j
=25°C, I
F
= 6A
T
j
=175°C, I
F
= 6A
11
10
9
-100
-150
-200
-250
-300
8
7
6
5
4
500
600
700
800
900
500
600
700
800
900
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 25.
Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
Figure 26.
Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(
V
R
=400V)
18
3.0
T
j
=25°C, V
GE
=0V
T
j
=175°C, V
GE
=0V
16
I
F
=0.5A
2.5
I
F
=3A
I
F
=6A
I
F
=12A
14
12
10
8
2.0
1.5
1.0
0.5
0.0
6
4
2
0
0
1
2
3
4
0
25
50
75
100
125
150
175
V
F
,ꢀFORWARDꢀVOLTAGEꢀ[V]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27.
Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
Figure 28.
Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
13
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
Package Drawing PG-TO252-3
DOCUMENT NO.
Z8B00003328
MILLIMETERS
DIM
MIN
2.16
0.00
0.64
0.65
4,95
0.46
0.40
5.97
5.02
6.35
4.32
MAX
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.21
0
A
A1
b
SCALE
2.5
b2
b3
c
0
2.5
5mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29 (BSC)
4.57 (BSC)
3
e1
N
ISSUE DATE
05-02-2016
H
9.40
1.18
0.89
0.51
10.48
L
1.78
1.27
1.02
REVISION
L3
L4
06
Datasheet
14
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
Testing Conditions
V
GE
(t)
I,V
90%
V
GE
t
rr
=
t
a
+
t
b
dI
F
/dt
Q
rr
=
Q
a
+
Q
b
a
b
10%
V
GE
t
Q
a
Q
b
I
C
(t)
dI
90%
I
C
90%
I
C
10%
I
C
10%
I
C
Figure C.
Definition of diode switching
characteristics
t
V
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
Figure A.
V
GE
(t)
90%
V
GE
Figure D.
10%
V
GE
t
I
C
(t)
CC
2%
I
C
t
V
CE
(t)
Figure E.
Dynamic test circuit
Parasitic inductance L
,
parasitic capacitor C
,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t
2
t
4
E
=
V
CE
x
I
C
x d
t
E
=
V
CE
x
I
C
x d
t
off
on
2%
V
CE
t
1
t
3
t
t
1
t
2
t
3
t
4
Figure B.
Datasheet
15
Vꢀ2.4
2014-03-12
IKD06N60RF
TRENCHSTOP
TM
ꢀRC-DrivesꢀFastꢀSeries
RevisionꢀHistory
IKD06N60RF
Revision:ꢀ2014-03-12,ꢀRev.ꢀ2.4
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2.2
2.3
2.4
2012-02-24 Final
data sheet
2013-12-10 New
value ICES max limit at 175°C
2014-02-26 Without
PB free logo
2014-03-12 Storage
temp -55…+150°C
Datasheet
16
Vꢀ2.4
2014-03-12
Trademarks
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ꢀ
ꢀ
ꢀ
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Publishedꢀby
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