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IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
CostꢀeffectiveꢀmonolithicallyꢀintegratedꢀIGBTꢀwithꢀDiode
ꢀ
C
E
Features:
TRENCHSTOP
TM
ꢀReverseꢀConductingꢀ(RC)ꢀtechnologyꢀforꢀ600V
applicationsꢀoffering
•ꢀVeryꢀtightꢀparameterꢀdistribution
•ꢀOperatingꢀrangeꢀupꢀtoꢀ20kHz
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀShortꢀcircuitꢀcapabilityꢀofꢀ3µs
G
•ꢀHumidityꢀrobustꢀdesign
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
PotentialꢀApplications:
•ꢀMajorꢀHomeꢀAppliances
ꢀꢀꢀ-ꢀAirꢀConditioning
ꢀꢀꢀ-ꢀRefrigerators
G
•ꢀDrives
ꢀꢀꢀ-ꢀGPDꢀ(GeneralꢀPurposeꢀDrives)
E
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
V
CE
I
C
V
CEsat
,ꢀ
T
vj
=25°C
T
vjmax
2V 175°C
Marking
Package
IKD15N60RC2
600V
15A
K15DRC2
PG-TO252-3
Datasheet
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
13
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
5
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀ
T
vj
ꢀ
≥
ꢀ25°C
V
CE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
c
ꢀ=ꢀ25°C
T
c
ꢀ=ꢀ100°C
I
C
28.0
18.6
A
Pulsedꢀcollectorꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Cpuls
45.0
45.0
A
A
Turn off safe operating area
V
CE
ꢀ
≤
ꢀ600V,ꢀ
T
vj
ꢀ
≤
ꢀ175°C,ꢀ
t
p
ꢀ=ꢀ1µs
–
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
c
ꢀ=ꢀ25°C
T
c
ꢀ=ꢀ100°C
I
F
12.5
6.6
A
Diodeꢀpulsedꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Fpuls
V
GE
45.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(
t
p
ꢀ
≤
ꢀ10µs,ꢀ
D
ꢀ<ꢀ0.010)
±20
±25
Short circuit withstand time
V
GE
ꢀ=ꢀ15.0V,ꢀ
V
CC
ꢀ
≤
ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
ꢀ=ꢀ150°C
t
SC
µs
3
Powerꢀdissipationꢀ
T
c
ꢀ=ꢀ25°C
Powerꢀdissipationꢀ
T
c
ꢀ=ꢀ100°C
115.4
57.7
P
tot
W
Operating junction temperature
Storage temperature
T
vj
-40…+175
-55…+150
°C
°C
T
stg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
R
th
ꢀCharacteristics
IGBT thermal resistance,
1)
junction – case
Diode thermal resistance,
2)
junction – case
R
th(j-c)
R
th(j-c)
R
th(j-a)
–
–
–
–
–
–
1.30 K/W
5.00 K/W
75 K/W
Thermal resistance, min. footprint
junction – ambient
Thermal resistance, 6cm² Cu on
PCB
R
th(j-a)
–
–
50 K/W
junction – ambient
1)
Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
2)
Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
Datasheet
3
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
V
GE
ꢀ=ꢀ15.0V,ꢀ
I
C
ꢀ=ꢀ15.0A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Collector-emitter saturation voltage
V
CEsat
–
–
2.00 2.30
2.40
V
–
V
GE
ꢀ=ꢀ0V,ꢀ
I
F
ꢀ=ꢀ15.0A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Diode forward voltage
V
F
–
–
1.90 2.20
V
V
1.95
–
Gate-emitter threshold voltage
V
GE(th)
I
C
ꢀ=ꢀ0.16mA,ꢀ
V
CE
ꢀ=ꢀ
V
GE
4.3
5.0
5.7
V
CE
ꢀ=ꢀ600V,ꢀ
V
GE
ꢀ=ꢀ0V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Zero gate voltage collector current
I
CES
–
–
–
–
25
2500
µA
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
ꢀ=ꢀ0V,ꢀ
V
GE
ꢀ=ꢀ20V
V
CE
ꢀ=ꢀ20V,ꢀ
I
C
ꢀ=ꢀ15.0A
–
–
–
100
–
nA
S
6.0
Integrated gate resistor
r
G
none
Ω
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
C
ies
–
–
–
575
28
–
–
–
V
CE
ꢀ=ꢀ25V,ꢀ
V
GE
ꢀ=ꢀ0V
f
ꢀ=ꢀ1000kHz
Output capacitance
C
oes
C
res
pF
nC
Reverse transfer capacitance
21
V
CC
ꢀ=ꢀ480V,ꢀ
I
C
ꢀ=ꢀ15.0A,
V
GE
ꢀ=ꢀ15V
Gate charge
Q
G
–
72.0
–
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
18
18
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ15.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ49.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ49.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
374
20
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.57
0.35
0.92
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
129
0.50
11.2
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ25°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ15.0A,
Q
rr
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ787A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-93
–
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
16
19
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ175°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ15.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ49.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ49.0
Ω
,
L
σ
ꢀ=ꢀ30nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
393
21
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.77
0.39
1.16
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
199
1.04
15.3
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ175°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ15.0A,
Q
rr
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ761A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-97
–
A/µs
Datasheet
5
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
120
100
80
60
40
20
0
30
25
20
15
10
5
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1.
Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(
T
vj
≤
175°C)
(
V
GE
≥
15V,ꢀ
T
vj
≤
175°C)
45
45
V
GE
=20V
V
GE
=20V
17V
15V
13V
11V
9V
17V
15V
13V
11V
9V
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
7V
7V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=25°C)
Figure 4.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=175°C)
Datasheet
6
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
45
40
35
30
25
20
15
10
5
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
j
=25°C
T
j
=175°C
I
C
=7,5A
I
C
=15A
I
C
=30A
0
2
4
6
8
10
12
14
25
50
75
100
125
150
175
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5.
Typicalꢀtransferꢀcharacteristic
(
V
CE
=20V)
Figure 6.
Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(
V
GE
=15V)
1000
1000
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
100
10
1
100
10
1
5
10
15
20
25
30
0
10
20
30
40
50
60
70
80
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
R
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
Figure 7.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=400V,
V
GE
=15/0V,ꢀ
R
G
=49
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=400V,
V
GE
=15/0V,ꢀ
I
C
=15A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
7
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
1000
100
10
7
6
5
4
3
2
1
0
typ.
t
d(off)
t
f
t
d(on)
t
r
1
25
50
75
100
125
150
175
25
50
75
100
125
150
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10.
Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
I
C
=15A,ꢀ
R
G
=49
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(
I
C
=0.16mA)
3.0
1.6
E
off
E
on
E
ts
E
off
E
on
E
ts
1.4
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
80
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
R
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
Figure 11.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=400V,
V
GE
=15/0V,ꢀ
R
G
=49
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=400V,
V
GE
=15/0V,ꢀ
I
C
=15A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure E)
Datasheet
8
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
E
off
E
on
E
ts
E
off
E
on
E
ts
25
50
75
100
125
150
175
200
250
300
350
400
450
500
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
I
C
=15A,ꢀ
R
G
=49
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
GE
=15/0V,
I
C
=15A,ꢀ
R
G
=49
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
16
V
CC
ꢀ=ꢀ120V
V
CC
ꢀ=ꢀ480V
C
ies
C
oes
C
res
14
12
10
8
1000
100
6
4
2
0
10
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
Q
GE
,ꢀGATEꢀCHARGEꢀ[nC]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15.
Typicalꢀgateꢀcharge
(
I
C
=15A)
Figure 16.
Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(
V
GE
=0V,ꢀf=1MHz)
Datasheet
9
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
160
1
140
D=0.5
0.2
120
0.1
0.05
0.1
0.02
100
0.01
single pulse
80
0.01
60
40
i:
1
2
3
4
5
r
i
[K/W]: 0.25012 0.88582 0.118768 0.0115115 7.0E-4
τ
i
[s]:
2.0E-4
9.2E-4
5.0E-3
0.1707067 4.115216
20
0.001
1E-6
12
13
14
15
16
17
18
1E-5
1E-4
0.001
0.01
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17.
Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
(
V
CE
≤
400V,ꢀ
T
vj
=25°C)
Figure 18.
IGBTꢀtransientꢀthermalꢀresistance
(
D
=
t
p
/T)
10
300
T
j
=25°C, I
F
= 15A
T
j
=175°C, I
F
= 15A
250
200
150
100
50
D=0.5
0.2
0.1
1
0.05
0.02
0.01
single pulse
0.1
i:
1
2
3
4
5
r
i
[K/W]: 0.30342 3.7726 1.04741 0.052065
1.3E-3
τ
i
[s]:
6.3E-5
3.5E-4 2.0E-3
0.06101217 4.420898
0.01
1E-6
0
1E-5
1E-4
0.001
0.01
500 750
1000 1250 1500 1750 2000 2250 2500
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19.
Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20.
Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(
D
=
t
p
/T)
(
V
R
=400V)
Datasheet
10
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
35
30
25
20
15
10
5
T
j
=25°C, I
F
= 15A
T
j
=175°C, I
F
= 15A
T
j
=25°C, I
F
= 15A
T
j
=175°C, I
F
= 15A
0
500 750
1000 1250 1500 1750 2000 2250 2500
500 750
1000 1250 1500 1750 2000 2250 2500
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21.
Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
Figure 22.
Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
0
50
T
j
=25°C, I
F
= 15A
T
j
=25°C
T
j
=175°C, I
F
= 15A
T
j
=175°C
-50
45
-100
-150
-200
-250
-300
-350
-400
-450
40
35
30
25
20
15
10
5
-500
0
500 750
1000 1250 1500 1750 2000 2250 2500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
V
F
,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 23.
Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 24.
Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(
V
R
=400V)
Datasheet
11
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
3.5
I
F
=7,5A
I
F
=15A
I
F
=30A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25.
Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
Package Drawing PG-TO252-3
DOCUMENT NO.
Z8B00003328
MILLIMETERS
DIM
MIN
2.16
0.00
0.64
0.65
4,95
0.46
0.40
5.97
5.02
6.35
4.32
MAX
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.21
0
A
A1
b
SCALE
2.5
b2
b3
c
0
2.5
5mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29 (BSC)
4.57 (BSC)
3
e1
N
ISSUE DATE
05-02-2016
H
9.40
1.18
0.89
0.51
10.48
L
1.78
1.27
1.02
REVISION
L3
L4
06
Datasheet
13
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
Testing Conditions
V
GE
(t)
I,V
90%
V
GE
t
rr
=
t
a
+
t
b
dI
F
/dt
Q
rr
=
Q
a
+
Q
b
a
b
10%
V
GE
t
Q
a
Q
b
I
C
(t)
dI
90%
I
C
90%
I
C
10%
I
C
10%
I
C
Figure C.
Definition of diode switching
characteristics
t
V
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
Figure A.
V
GE
(t)
90%
V
GE
Figure D.
10%
V
GE
t
I
C
(t)
CC
2%
I
C
t
V
CE
(t)
Figure E.
Dynamic test circuit
Parasitic inductance L
,
parasitic capacitor C
,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t
2
t
4
E
=
V
CE
x
I
C
x d
t
E
=
V
CE
x
I
C
x d
t
off
on
2%
V
CE
t
1
t
3
t
t
1
t
2
t
3
t
4
Figure B.
Datasheet
14
Vꢀ2.1
2020-09-28
IKD15N60RC2
TRENCHSTOP
TM
ꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications
RevisionꢀHistory
IKD15N60RC2
Revision:ꢀ2020-09-28,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2020-09-28 Final
data sheet
Datasheet
15
Vꢀ2.1
2020-09-28
Trademarks
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ꢀ
ꢀ
ꢀ
ꢀ
Publishedꢀby
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81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2020.
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(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany
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