Infineon-Technologies-IKP04N60T
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IKP04N60T
q
TrenchStop
®
Series
Low Loss DuoPack :
IGBT in TrenchStop
®
and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
E
•
•
•
•
Very low
V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
µ
s
Designed for :
G
– Frequency Converters
– Drives
•
TrenchStop
®
and Fieldstop technology for 600 V applications
offers :
PG-TO-220-3-1
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– very high switching speed
– low V
CE(sat)
•
•
•
•
•
•
•
Positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
T
j,max
1.5 V
Marking
Package
IKP04N60T
600 V
4 A
K04T60
PG-TO-220-3-1
175
°
C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
C
E
I
C
600
V
A
DC collector current, limited by
T
jmax
T
C
= 25
°
C
8
4
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
I
C
pul s
–
I
F
12
12
Turn off safe operating area (
V
CE
≤
600V,
T
j
≤
175
°
C)
Diode forward current, limited by
T
jmax
T
C
= 25
°
C
8
4
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
I
F
pul s
V
G E
t
S
C
12
±
20
5
V
Short circuit withstand time
2)
µ
s
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150
°
C
P
t
o
t
T
j
T
s
tg
–
42
W
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-40…+175
-55…+175
260
°
C
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.4
Sep. 07
Power Semiconductors
IKP04N60T
q
TrenchStop
®
Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
t
h
JC
R
t
h
JCD
R
t
h
JA
3.5
5
K/W
62
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage
V
(
B
R)CES
V
G
E
=
0V,
I
C
=
0.2mA
600
–
–
V
Collector-emitter saturation voltage
V
C
E
( sat )
V
G E
=
1
5V,
I
C
=
4A
T
j
=25
°
C
–
–
1.5
1.9
2.05
–
T
j
=
175
°
C
Diode forward voltage
V
F
V
G
E
=
0V,
I
F
=
4A
–
–
1.65
1.6
2.05
–
T
j
=25
°
C
T
j
=
175
°
C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
G
E
(t h)
I
C
ES
I
C
=
6
0µA,
V
C
E
=
V
G
E
4.1
4.9
5.7
V
CE
=
600V
,
µA
V
G
E
=
0V
T
j
=25
°
C
T
j
=
175
°
C
–
–
–
–
–
–
–
40
1000
100
–
Gate-emitter leakage current
Transconductance
I
G
ES
g
f
s
V
V
CE
=
0V,
V
G
E
=
20V
CE
=
20V,
I
C
=
4A
nA
S
2.2
–
Integrated gate resistor
R
G
i
nt
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
i
ss
C
o
ss
C
r
ss
V
V
CE
=
25V,
G
E
=
0V,
–
–
–
–
252
20
7.5
27
–
–
–
–
pF
f
=
1MHz
V
V
Q
G
ate
CC
=
480V,
I
C
=
4A
G
E
=
15V
nC
nH
A
Internal emitter inductance
L
E
–
–
7
–
–
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C
( SC)
36
V
G
E
=
15V,
t
S
C
≤
5
µ
s
V
C
C
=
4
00V,
T
j
≤
150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.4
Sep. 07
Power Semiconductors
IKP04N60T
q
TrenchStop
®
Series
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
Unit
Parameter
Symbol
Conditions
min.
Typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
t
d
(on)
t
r
t
d
(off)
t
f
E
o
n
E
o
ff
E
t s
–
–
–
–
–
–
–
14
7
164
43
61
84
–
–
–
–
–
–
–
ns
µJ
T
j
=25
°
C
,
V
V
CC
=
400V,
I
C
=
4A,
G
E
=
0/15V,
R
G
=
4
7
Ω
,
L
σ
1
)
=
150nH,
C
σ
1
)
=
47pF
Energy losses include
“tail” and diode
reverse recovery.
145
t
r
r
Q
r
r
–
–
–
–
28
79
5.3
346
–
–
–
–
ns
nC
A
T
j
=25
°
C
,
V
R
=
400V,
I
F
=
4A,
di
F
/
dt
=
610A/
µ
s
Diode peak reverse recovery current
I
r
rm
Diode peak rate of fall of reverse
di
r
r
/
dt
A/
µ
s
recovery current during
t
b
Switching Characteristic, Inductive Load,
at
T
j
=175
°
C
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
t
d
(on)
t
r
t
d
(off)
t
f
E
o
n
E
o
ff
E
t s
–
–
–
–
–
–
–
14
10
185
83
99
97
–
–
–
–
–
–
–
ns
T
j
=
175
°
C
,
V
V
CC
=
400V,
I
C
=
4A,
G
E
=
0/15V,
R
G
=
4
7
Ω
L
σ
1
)
=
150nH,
C
σ
1
)
=
47pF
µJ
Energy losses include
“tail” and diode
reverse recovery.
196
t
r
r
Q
r
r
–
–
–
–
95
291
6.6
–
–
–
–
ns
nC
A
T
j
=
175
°
C
V
R
=
400V,
I
F
=
4A,
di
F
/
dt
=
610A/
µ
s
Diode peak reverse recovery current
I
r
rm
Diode peak rate of fall of reverse
di
r
r
/
dt
253
A/
µ
s
recovery current during
t
b
1)
Leakage inductance
L
σ
a
nd
S
tray
capacity
C
σ
due to dynamic test circuit in Figure E.
3
Rev. 2.4
Sep. 07
Power Semiconductors
IKP04N60T
q
TrenchStop
®
Series
t
p
=2µs
10A
12A
10A
8A
10µs
T
C
=
80°C
T
C
=110°C
1A
6A
50µs
4A
I
c
I
c
1ms
DC
2A
0.1A
10ms
0A
10Hz
1V
10V
100V
1000V
100Hz
1kHz
10kHz 100kHz
f
,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 1.
Collector current as a function of
Figure 2.
Safe operating area
(
D =
0,
T
C
= 25
°
C,
T
j
≤
175
°
C;
V
GE
=15V)
switching frequency
(
T
j
≤
175
°
C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 47
Ω
)
8A
6A
4A
2A
0A
40W
30W
20W
10W
0W
25°C
75°C
125°C
25°C 50°C
75°C 100°C
125°C 150°C
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3.
Power dissipation as a function of
Figure 4.
Collector current as a function of
case temperature
case temperature
(
T
j
≤
175
°
C)
(
V
GE
≥
15V,
T
j
≤
175
°
C)
4
Rev. 2.4
Sep. 07
Power Semiconductors
IKP04N60T
q
TrenchStop
®
Series
10A
8A
6A
4A
2A
0A
10A
V
GE
=20V
15V
V
GE
=20V
15V
8A
6A
4A
2A
0A
13V
11V
9V
13V
11V
9V
7V
7V
0V
1V
2V
3V
0V
1V
2V
3V
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 5.
Typical output characteristic
Figure 6.
Typical output characteristic
(
T
j
= 25°C)
(
T
j
= 175°C)
2.5V
I
C
=8A
8A
6A
4A
2.0V
1.5V
1.0V
0.5V
0.0V
I
C
=4A
I
C
=2A
2A
0A
T
J
=
175°C
25°C
0°C
50°C
100°C
150°C
0V
2V
4V
6V
8V
V
GE
,
GATE-EMITTER VOLTAGE
Figure 7.
Typical transfer characteristic
T
J
,
JUNCTION TEMPERATURE
Figure 8.
Typical collector-emitter
(V
CE
=20V)
saturation voltage as a function of
junction temperature
(
V
GE
= 15V)
5
Rev. 2.4
Sep. 07
Power Semiconductors
IKP04N60T
q
TrenchStop
®
Series
t
d(off)
t
d(off)
100ns
10ns
1ns
100ns
t
f
t
d(on)
t
f
t
d(on)
t
r
10ns
t
r
50Ω
0A
2A
4A
6A
100Ω
150Ω
200Ω
250Ω
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9.
Typical switching times as a
function of collector current
(inductive load,
T
J
=175°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 47
ꢀ
,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 4A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
7V
t
d(off)
6V
max.
100ns
typ.
5V
t
f
4V
3V
2V
1V
0V
min.
t
d(on)
10ns
t
r
25°C
50°C
75°C 100°C
125°C 150°C
-50°C
0°C
50°C
100°C
150°C
T
J
,
JUNCTION TEMPERATURE
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
I
C
= 60 µA)
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 4A,
R
G
=47
ꢀ
,
Dynamic test circuit in Figure E)
6
Rev. 2.4
Sep. 07
Power Semiconductors
IKP04N60T
q
TrenchStop
®
Series
*)
E
on
and
E
ts
include losses
*)
E
on
and
E
ts
include losses
due to diode recovery
due to diode recovery
E
ts
*
0.4 mJ
0.3 mJ
0.2 mJ
0.1 mJ
0.0 mJ
E
ts
*
0.3mJ
0.2mJ
0.1mJ
0.0mJ
E
off
E
off
E
on
*
E
on
*
25Ω 50Ω
100Ω
150Ω
200Ω
250Ω
0A
2A
4A
6A
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 47
ꢀ
,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 4A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
*)
E
on
and
E
ts
include losses
*)
E
on
a
nd
E
ts
include losses
175µJ
150µJ
125µJ
100µJ
75µJ
50µJ
25µJ
0µJ
due to diode recovery
due to diode recovery
0.25mJ
0.20mJ
0.15mJ
0.10mJ
0.05mJ
0.00mJ
E
ts
*
E
ts
*
E
off
E
off
E
on
*
E
on
*
25°C 50°C 75°C
100°C 125°C 150°C
300V
350V
400V
450V
T
J
,
JUNCTION TEMPERATURE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 15. Typical switching energy losses
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
as a function of junction
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 4A,
R
G
= 47
ꢀ
,
Dynamic test circuit in Figure E)
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 4A,
R
G
= 47
ꢀ
,
Dynamic test circuit in Figure E)
7
Rev. 2.4
Sep. 07
Power Semiconductors
IKP04N60T
q
TrenchStop
®
Series
C
iss
15V
10V
5V
120V
100pF
480V
C
oss
10pF
C
rss
0V
0V 10V
20V 30V 40V 50V 60V 70V
0nC 5nC
10nC 15nC 20nC 25nC 30nC
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 17. Typical gate charge
Figure 18. Typical capacitance as a function
(
I
C
=4 A)
of collector-emitter voltage
(
V
GE
=0V,
f
= 1 MHz)
12µs
10µs
8µs
60A
50A
40A
30A
20A
10A
0A
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
12V
14V
16V
18V
V
GE
,
GATE
–
EMITTETR VOLTAGE
V
GE
,
GATE
–
EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
=600V
,
start at
T
J
=
25°C,
T
Jmax
<150°C)
(
V
CE
≤
400V,
T
j
≤
150
°
C)
8
Rev. 2.4
Sep. 07
Power Semiconductors
IKP04N60T
q
TrenchStop
®
Series
D
=0.5
D
=0.5
10
0
K/W
0.2
0.1
0.2
R
, ( K / W )
0.38216
0.68326
1.49884
0.93550
τ
,
( s )
5.16*10
-2
7.818*10
-3
9*10
-4
10
0
K/W
R
, ( K / W )
0.29183
0.79081
1.86970
2.04756
τ
,
( s )
7.018*10
-2
1.114*10
-2
1.236*10
-3
2.101*10
-4
R
2
6
0.1
1.134*10
-4
R
2
0.05
R
1
R
1
0.05
0.02
0.01
10
-1
K/W
C
1
=
τ
1
/
R
1
C
2
=
τ
2
/
R
2
C
1
=
τ
1
/
R
1
C
2
=
τ
2
/
R
2
0.02
0.01
10
-1
K/W
single pulse
single pulse
1µs
10µs 100µs
1ms 10ms
100ms
1µs 10µs
100µs 1ms
10ms 100ms
t
P
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal resistance
Figure 22. Diode transient thermal
(
D = t
p
/
T
)
impedance as a function of pulse
width
(
D
=
t
P
/
T
)
280ns
240ns
0.35µC
T
J
=175°C
0.30µC
0.25µC
0.20µC
T
J
=175°C
200ns
160ns
120ns
T
J
=25°C
0.15µC
0.10µC
0.05µC
0.00µC
80ns
T
J
=25°C
40ns
0ns
400A/µs
600A/µs
400A/µs
600A/µs
di
F
/dt
,
DIODE CURRENT SLOPE
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
=400V,
I
F
=4A,
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
Dynamic test circuit in Figure E)
(
V
R
= 400V,
I
F
= 4A,
Dynamic test circuit in Figure E)
9
Rev. 2.4
Sep. 07
Power Semiconductors
IKP04N60T
q
TrenchStop
®
Series
T
J
=175°C
T
J
=175°C
10A
8A
6A
4A
2A
0A
-300A/µs
-200A/µs
-100A/µs
0A/µs
T
J
=25°C
T
J
=25°C
400A/µs
600A/µs
400A/µs
600A/µs
di
F
/dt
,
DIODE CURRENT SLOPE
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(
V
R
=400V,
I
F
=4A,
(
V
R
= 400V,
I
F
= 4A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
I
F
=8A
10A
8A
2.0V
4A
2A
1.5V
1.0V
0.5V
0.0V
6A
T
J
=25°C
4A
175°C
2A
0A
0°C
50°C
100°C
150°C
0V
1V
2V
V
F
,
FORWARD VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
Figure 27. Typical diode forward current as
a function of forward voltage
10
Rev. 2.4
Sep. 07
Power Semiconductors
IKP04N60T
q
TrenchStop
®
Series
PG-TO-220-3-1
11
Rev. 2.4
Sep. 07
Power Semiconductors
IKP04N60T
q
TrenchStop
®
Series
i,v
t
r r
=t
S
+
t
F
di
F
/dt
Q
r r
=Q
S
+
Q
F
t
r r
I
F
t
S
t
F
t
Q
S
10%
I
r r m
Q
F
I
r r m
di
r r
/dt
V
R
90%
I
r r m
Figure C. Definition of diodes
switching characteristics
τ
1
τ
2
r
2
τ
n
r
1
r
n
T (t)
j
p(t)
r
2
r
1
r
n
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance
L
σ
=60nH
and
S
tray
capacity
C
σ
=40pF.
Figure B. Definition of switching losses
12
Rev. 2.4
Sep. 07
Power Semiconductors
IKP04N60T
q
TrenchStop
®
Series
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 9/12/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
13
Rev. 2.4
Sep. 07
Power Semiconductors
