Infineon-Technologies-IKP06N60T
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IKP06N60T
p
TRENCHSTOP
™
Series
Low Loss DuoPack : IGBT in TRENCHSTOP
™
and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features
C
E
Very low
V
CE(sat)
1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5
s
Designed for :
G
– Variable Speed Drive for washing machines, air conditioners and induction
cooking
– Uninterrupted Power Supply
TRENCHSTOP
™
and Fieldstop technology for 600V applications offers :
– very tight parameter distribution
– high ruggedness, temperature stable behaviour
Low EMI
PG-TO220-3
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Type
V
CE
I
C;Tc=100°C
V
CE(sat
),Tj=25°C
T
j,max
6A 1.5V
Marking
Package
IKP06N60T
600V
K06T60
PG-TO220-3
175
C
Maximum Ratings
Parameter
Symbol
V
C E
Value
Unit
Collector-emitter voltage
,
T
j
≥ 25
C
600
V
DC collector current, limited by
T
jmax
T
C
= 25
C
T
C
= 100
C
12
6
I
C
Pulsed collector current,
t
p
limited by
T
jmax
I
C
p ul s
–
18
18
A
Turn off safe operating area,
V
CE
= 600V,
T
j
= 175
C,
t
p
= 1µs
Diode forward current, limited by
T
jmax
T
C
= 25
C
T
C
= 100
C
12
6
I
F
Diode pulsed current,
t
p
limited by
T
jmax
I
F
p ul s
V
G E
18
Gate-emitter voltage
V
20
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
400V,
T
j
150
C
t
S
C
5
s
Power dissipation
T
C
= 25
C
P
t
o
t
88
W
Operating junction temperature
Storage temperature
T
j
-40…+175
-55…+150
T
s
t g
C
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
260
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.5
20.09.2013
IFAG IPC TD VLS
IKP06N60T
p
TRENCHSTOP
™
Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
t
h
JC
R
t
h
JC D
R
t
h
JA
1.7
2.6
62
K/W
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage
V
(
B
R )C ES
V
G E
=
0V,
I
C
=
0.25mA
600
–
–
V
Collector-emitter saturation voltage
V
C
E
( sat )
V
G E
=
1
5V,
I
C
=
6A
–
–
1.5
1.8
2.05
T
j
=25
C
T
j
=175
C
V
G E
=
0V,
I
F
=
6A
T
j
=25
C
Diode forward voltage
V
F
–
–
1.6
1.6
2.05
–
T
j
=175
C
I
C
=
0.18mA,
V
C E
=
V
G E
Gate-emitter threshold voltage
V
G
E
( t h)
4.1
4.6
5.7
Zero gate voltage collector current
I
C
E S
V
C E
=
600V
,
V
G E
=
0V
µA
T
j
=25
C
–
–
–
–
–
–
40
700
100
–
T
j
=175
C
Gate-emitter leakage current
Transconductance
I
G
E S
g
f
s
V
C E
=
0V,
V
G E
=20V
V
C E
=
20V,
I
C
=
6A
–
nA
S
3.6
none
Integrated gate resistor
R
G
i
nt
Ω
Dynamic Characteristic
Input capacitance
C
i
s
s
V
C E
=
25V,
V
G E
=
0V,
f
=
1MHz
–
–
–
–
368
28
–
–
–
–
pF
Output capacitance
Reverse transfer capacitance
Gate charge
C
o
s s
C
r
s s
11
Q
G
at e
V
C C
=
480V,
I
C
=6A
V
G E
=
15V
42
nC
nH
A
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
L
E
–
–
7
–
–
I
C
( SC )
55
V
G E
=
15V,
t
S
C
5
s
V
C C
=
4
00V,
T
j
=
2
5
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.5
20.09.2013
IFAG IPC TD VLS
IKP06N60T
p
TRENCHSTOP
™
Series
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
T
j
=
25
C
,
t
d
( o n)
t
r
t
d
( of f)
t
f
–
–
–
–
–
–
–
9
–
–
–
–
–
–
–
ns
V
C C
=
400V,
I
C
=
6A,
V
G E
=
0/15V,
r
G
=
23
,
L
=
60nH,
C
=
40pF
6
Turn-off delay time
Fall time
130
58
L
,
C
f
rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Turn-on energy
E
o n
E
o
f
f
E
t s
0.09
0.11
0.2
mJ
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
t
r
r
–
–
–
–
123
190
5.3
–
–
–
–
ns
T
j
=25
C
,
Q
r
r
nC
A
V
R
=
400V,
I
F
=
6A,
di
F
/
dt
=550A/
s
Diode peak reverse recovery current
I
r
r m
Diode peak rate of fall of reverse
recovery current during
t
b
di
r
r
/
dt
450
A/
s
Switching Characteristic, Inductive Load,
at
T
j
=175
C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
T
j
=
175
C
,
t
d
( o n)
t
r
t
d
( of f)
t
f
–
–
–
–
–
–
–
9
8
–
–
–
–
–
–
–
ns
V
C C
=
400V,
I
C
=
6A,
V
G E
=
0/15V,
r
G
=
23
,
L
=
60nH,
C
=
40pF
Turn-off delay time
Fall time
165
84
L
,
C
f
rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Turn-on energy
E
o n
E
o
f
f
E
t s
0.14
0.18
0.335
mJ
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
t
r
r
–
–
–
–
180
500
7.6
–
–
–
–
ns
T
j
=175
C
Q
r
r
nC
A
V
R
=
400V,
I
F
=
6A,
di
F
/
dt
=550A/
s
Diode peak reverse recovery current
I
r
r m
Diode peak rate of fall of reverse
recovery current during
t
b
di
r
r
/
dt
285
A/
s
3
Rev. 2.5
20.09.2013
IFAG IPC TD VLS
IKP06N60T
p
TRENCHSTOP
™
Series
t
p
=1µs
10A
18A
15A
12A
9A
5µs
10µs
T
C
=80°C
50µs
T
C
=110°C
1A
6A
I
c
500µs
3A
5ms
DC
I
c
0,1A
0A
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f
,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 1.
Collector current as a function of
switching frequency
Figure 2.
Safe operating area
(
D =
0,
T
C
= 25
C,
(
T
j
175
C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/15V,
r
G
= 23
)
T
j
175
C;
V
GE
=0/15V)
80W
60W
40W
20W
0W
15A
10A
5A
0A
25°C
75°C
125°C
25°C
50°C
75°C 100°C
125°C 150°C
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3.
Power dissipation as a function of
case temperature
Figure 4.
Collector current as a function of
case temperature
(
T
j
175
C)
(
V
GE
15V,
T
j
175
C)
4
Rev. 2.5
20.09.2013
IFAG IPC TD VLS
IKP06N60T
p
TRENCHSTOP
™
Series
15A
12A
9A
15A
V
G
E
=20V
V
G
E
=20V
15V
12A
9A
6A
3A
0A
15V
13V
11V
9V
13V
11V
9V
7V
7V
6A
3A
0A
0V
1V
2V
3V
0V
1V
2V
3V
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 5.
Typical output characteristic
Figure 6.
Typical output characteristic
(
T
j
= 25°C)
(
T
j
= 175°C)
I
C
=12A
I
C
=6A
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
15A
12A
9A
I
C
=3A
6A
T
J
=
175°C
3A
25°C
0A
-50°C
0°C
50°C
100°C
0V
2V
4V
6V
8V
10V
V
GE
,
GATE-EMITTER VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 7.
Typical transfer characteristic
Figure 8.
Typical collector-emitter
saturation voltage as a function of
(V
CE
=20V)
junction temperature
(
V
GE
= 15V)
5
Rev. 2.5
20.09.2013
IFAG IPC TD VLS
IKP06N60T
p
TRENCHSTOP
™
Series
t
d(off)
t
d(off)
100ns
t
f
t
f
100ns
10ns
1ns
t
d(on)
t
r
t
d(on)
10ns
t
r
1ns
0A
3A
6A
9A
12A
15A
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9.
Typical switching times as a
function of collector current
(inductive load,
T
J
=175°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V,
r
G
= 23Ω,
Dynamic test circuit in Figure E)
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 6A,
Dynamic test circuit in Figure E)
6V
5V
4V
3V
2V
1V
0V
t
d(off)
100ns
10ns
1ns
max.
typ.
t
f
t
d(on)
min.
t
r
50°C
100°C
150°C
-50°C
0°C
50°C
100°C
150°C
T
J
,
JUNCTION TEMPERATURE
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
I
C
= 0.18mA)
V
GE
= 0/15V,
I
C
= 6A,
r
G
= 23Ω,
Dynamic test circuit in Figure E)
6
Rev. 2.5
20.09.2013
IFAG IPC TD VLS
IKP06N60T
p
TRENCHSTOP
™
Series
*)
E
on
and
E
ts
include losses
*)
E
on
and
E
ts
include losses
due to diode recovery
due to diode recovery
E
ts
*
0,6 mJ
0,5 mJ
0,4 mJ
0,3 mJ
0,2 mJ
0,1 mJ
0,0 mJ
0,4 mJ
E
ts
*
0,3 mJ
E
on
*
E
off
0,2 mJ
E
off
E
on
*
0,1 mJ
0,0 mJ
0A
2A
4A
6A
8A
10A
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
=175°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
=175°C,
V
CE
=400V, V
GE
=0/15V,
r
G
=23Ω,
Dynamic test circuit in Figure E)
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 6A,
Dynamic test circuit in Figure E)
*)
E
on
and
E
ts
include losses
*)
E
on
a
nd
E
ts
include losses
due to diode recovery
0,4mJ
due to diode recovery
0,5mJ
E
ts
*
0,4mJ
0,3mJ
0,2mJ
0,1mJ
0,0mJ
0,3mJ
E
off
E
ts
*
0,2mJ
E
off
E
on
*
0,1mJ
E
on
*
0,0mJ
50°C
100°C
150°C
200V
300V
400V
500V
T
J
,
JUNCTION TEMPERATURE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
temperature
(inductive load,
V
CE
=400V,
V
GE
= 0/15V,
I
C
= 6A,
r
G
= 23Ω,
Dynamic test circuit in Figure E)
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 6A,
r
G
= 23Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.5
20.09.2013
IFAG IPC TD VLS
IKP06N60T
p
TRENCHSTOP
™
Series
1nF
C
iss
15V
10V
5V
120V
100pF
480V
C
oss
C
rss
10pF
0V
0nC
10nC 20nC 30nC 40nC 50nC
0V
10V
20V
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 17. Typical gate charge
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(
I
C
= 6 A)
(
V
GE
=0V,
f
= 1 MHz)
12µs
10µs
8µs
80A
60A
40A
20A
0A
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
12V
14V
16V
18V
V
GE
,
GATE
–
EMITTETR VOLTAGE
V
GE
,
GATE
–
EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
=400V
,
start at
T
J
=
25°C,
T
Jmax
<150°C)
(
V
CE
400V,
T
j
150
C)
8
Rev. 2.5
20.09.2013
IFAG IPC TD VLS
IKP06N60T
p
TRENCHSTOP
™
Series
D
=0.5
10
0
K/W
10
-1
K/W
10
-2
K/W
10
0
K/W
10
-1
K/W
10
-2
K/W
D
=0.5
0.2
R
, ( K / W )
0.2520
0.4578
1.054
0.7822
R
1
,
( s )
4.849*10
-2
1.014*10
-2
1.309*10
-3
1.343*10
-4
R
2
0.2
R
, ( K / W )
0.3837
0.4533
0.5877
0.2483
,
( s )
5.047*10
-2
4.758*10
-3
4.965*10
-4
4.717*10
-5
R
2
0.1
0.1
0.05
0.05
R
1
0.02
0.01
C
1
=
1
/
R
1
C
2
=
2
/
R
2
0.02
0.01
C
1
=
1
/
R
1
C
2
=
2
/
R
2
single pulse
single pulse
1µs 10µs
100µs 1ms
10ms 100ms
1µs 10µs
100µs 1ms
10ms 100ms
t
P
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
Figure 22. Diode transient thermal
impedance as a function of pulse
(
D = t
p
/
T
)
width
(
D
=
t
P
/
T
)
250ns
200ns
0,5µC
0,4µC
0,3µC
0,2µC
0,1µC
0,0µC
T
J
=175°C
T
J
=175°C
150ns
100ns
50ns
0ns
T
J
=25°C
T
J
=25°C
200A/µs 400A/µs 600A/µs 800A/µs
200A/µs
400A/µs
600A/µs
800A/µs
di
F
/dt
,
DIODE CURRENT SLOPE
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
= 400V,
I
F
= 6A,
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
Dynamic test circuit in Figure E)
(
V
R
=400V,
I
F
=6 A,
Dynamic test circuit in Figure E)
9
Rev. 2.5
20.09.2013
IFAG IPC TD VLS
IKP06N60T
p
TRENCHSTOP
™
Series
T
J
=175°C
-500A/µs
-400A/µs
-300A/µs
-200A/µs
-100A/µs
0A/µs
T
J
=25°C
8A
6A
4A
2A
0A
T
J
=25°C
T
J
=175°C
200A/µs 400A/µs 600A/µs 800A/µs
200A/µs
400A/µs
600A/µs
800A/µs
di
F
/dt
,
DIODE CURRENT SLOPE
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(
V
R
= 400V,
I
F
= 6A,
(
V
R
= 400V,
I
F
= 6A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
10A
8A
2,0V
I
F
=12A
6A
1,5V
6A
3A
1,0V
4A
T
J
=175°C
0,5V
0,0V
2A
25°C
0A
0°C
50°C
100°C
150°C
0V
1V
2V
V
F
,
FORWARD VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
10
Rev. 2.5
20.09.2013
IFAG IPC TD VLS
IKP06N60T
p
TRENCHSTOP
™
Series
PG-TO220-3
11
Rev. 2.5
20.09.2013
IFAG IPC TD VLS
IKP06N60T
p
TRENCHSTOP
™
Series
i,v
t
=t
+
t
S F
di /dt
r r
F
Q
=Q
+
Q
r r
S
F
t
r r
I
t
t
F
S
F
t
Q
10%
I
r r m
Q
S
F
I
r r m
di /dt
V
r r
r r m
R
90%
I
Figure C. Definition of diodes
switching characteristics
1
2
n
r
1
r
2
r
n
T (t)
j
p(t)
r
2
r
1
r
n
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
12
Rev. 2.5
20.09.2013
IFAG IPC TD VLS
IKP06N60T
p
TRENCHSTOP
™
Series
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
13
Rev. 2.5
20.09.2013
IFAG IPC TD VLS
