Infineon-Technologies-IKP20N65H5

IGBT  

Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOP

TM

ꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1  

fastꢀandꢀsoftꢀantiꢀparallelꢀdiode  

IKP20N65H5  

650VꢀDuoPackꢀIGBTꢀandꢀDiode  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

Dataꢀsheet  

IndustrialꢀPowerꢀControl  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOP

TM

ꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1  

fastꢀandꢀsoftꢀantiꢀparallelꢀdiode  

ꢀ

C

FeaturesꢀandꢀBenefits:  

HighꢀspeedꢀH5ꢀtechnologyꢀoffering  

•ꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant  

topologies  

•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs  

•ꢀ650Vꢀbreakdownꢀvoltage  

•ꢀLowꢀQ

g  

G

E

•ꢀIGBTꢀcopackedꢀwithꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode  

•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C  

•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications  

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  

•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  

C

Applications:  

•ꢀSolarꢀconverters  

•ꢀUninterruptibleꢀpowerꢀsupplies  

•ꢀWeldingꢀconverters  

G

C

E

•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters  

KeyꢀPerformanceꢀandꢀPackageꢀParameters  

Type  

V

CE  

I

C  

V

CEsat

,ꢀ

T

vj

=25°C

T

vjmax  

1.65V 175°C  

Marking  

Package  

IKP20N65H5  

650V  

20A  

K20EH5  

PG-TO220-3  

2

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

TableꢀofꢀContents  

Description .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  

Table of Contents

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  

Maximum Ratings

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

4  

Thermal Resistance

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

4  

Electrical Characteristics

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  

Electrical Characteristics Diagrams

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

8  

Package Drawing

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

.

15  

Testing Conditions

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  

Revision History

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

.

1

7  

Disclaimer .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17  

3

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

MaximumꢀRatings  

Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.  

Parameter  

Symbol  

Value  

Unit  

Collector-emitterꢀvoltage,ꢀ

T

vj

ꢀ

≥

ꢀ25°C  

V

CE  

650  

V

DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ

T

vjmax  

T

C

ꢀ=ꢀ25°C  

T

C

ꢀ=ꢀ100°C  

I

C  

42.0  

21.0  

A

Pulsedꢀcollectorꢀcurrent,ꢀ

t

p

ꢀlimitedꢀbyꢀ

T

vjmax  

I

Cpuls  

60.0  

60.0  

A

A

Turn off safe operating area  

V

CE

ꢀ

≤

ꢀ650V,ꢀ

T

vj

ꢀ

≤

ꢀ175°C,ꢀ

t

p

ꢀ=ꢀ1µs  

–

Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ

T

vjmax  

T

C

ꢀ=ꢀ25°C  

T

C

ꢀ=ꢀ100°C  

I

F  

20.0  

10.0  

A

Diodeꢀpulsedꢀcurrent,ꢀ

t

p

ꢀlimitedꢀbyꢀ

T

vjmax  

I

Fpuls  

V

GE  

60.0  

A

V

Gate-emitter voltage  

TransientꢀGate-emitterꢀvoltageꢀ(

t

p

ꢀ

≤

ꢀ10µs,ꢀDꢀ<ꢀ0.010)  

±20  

±30  

Powerꢀdissipationꢀ

T

C

ꢀ=ꢀ25°C  

Powerꢀdissipationꢀ

T

C

ꢀ=ꢀ100°C  

125.0  

63.0  

P

tot  

W

Operating junction temperature  

Storage temperature  

T

vj  

-40…+175  

-55…+150  

°C  

°C  

T

stg  

Soldering temperature,  

wave soldering

 

1.6 mm (0.063 in.) from case for 10s  

°C  

260  

0.6  

Mounting torque, M3 screw  

Maximum of mounting processes: 3  

M

Nm  

ThermalꢀResistance  

Parameter  

Symbol Conditions  

Max.ꢀValue  

Unit  

Characteristic  

IGBT thermal resistance,  

junction – case  

R

th(j-c)  

R

th(j-c)  

R

th(j-a)  

1.20  

2.20  

62  

K/W  

K/W  

K/W  

Diode thermal resistance,  

junction – case  

Thermal resistance  

junction – ambient  

4

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

ElectricalꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

StaticꢀCharacteristic  

Collector-emitter breakdown voltage

V

(BR)CES

V

GE

ꢀ=ꢀ0V,ꢀ

I

C

ꢀ=ꢀ0.20mA  

V

GE

ꢀ=ꢀ15.0V,ꢀ

I

C

ꢀ=ꢀ20.0A  

T

vj

ꢀ=ꢀ25°C  

Collector-emitter saturation voltage

 

V

CEsat  

T

vj

ꢀ=ꢀ125°C  

650  

–

–

V

V

–

–

–

1.65 2.10  

1.85  

1.95  

–

–

T

vj

ꢀ=ꢀ175°C  

V

GE

ꢀ=ꢀ0V,ꢀ

I

F

ꢀ=ꢀ10.0A  

T

vj

ꢀ=ꢀ25°C  

T

vj

ꢀ=ꢀ125°C  

T

vj

ꢀ=ꢀ175°C  

–

–

–

1.45 1.80  

Diode forward voltage  

V

F  

V

V

1.40  

1.40  

–

–

Gate-emitter threshold voltage  

V

GE(th)  

I

C

ꢀ=ꢀ0.20mA,ꢀ

V

CE

ꢀ=ꢀ

V

GE  

3.2  

4.0  

4.8  

V

CE

ꢀ=ꢀ650V,ꢀ

V

GE

ꢀ=ꢀ0V  

T

vj

ꢀ=ꢀ25°C  

T

vj

ꢀ=ꢀ175°C  

Zero gate voltage collector current

 

I

CES  

–

–

–

–

40.0 µA  

4000.0  

Gate-emitter leakage current  

Transconductance  

I

GES  

g

fs  

V

CE

ꢀ=ꢀ0V,ꢀ

V

GE

ꢀ=ꢀ20V  

V

CE

ꢀ=ꢀ20V,ꢀ

I

C

ꢀ=ꢀ20.0A  

–

–

–

100  

–

nA  

S

24.0  

ElectricalꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

DynamicꢀCharacteristic  

Input capacitance  

C

ies  

–

–

–

1200  

30  

–

–

–

Output capacitance  

C

oes  

C

res  

V

CE

ꢀ=ꢀ25V,ꢀ

V

GE

ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  

pF  

Reverse transfer capacitance  

5

V

CC

ꢀ=ꢀ520V,ꢀ

I

C

ꢀ=ꢀ20.0A,  

V

GE

ꢀ=ꢀ15V  

Gate charge  

Q

G  

L

E  

–

–

48.0  

7.0  

–

–

nC  

nH  

Internal emitter inductance  

measured 5mm (0.197 in.) from  

case  

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

IGBTꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

18  

8

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ25°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ10.0A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

r

G

ꢀ=ꢀ32.0

Ω

,ꢀ

L

σ

ꢀ=ꢀ30nH,  

C

σ

ꢀ=ꢀ30pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

Energy losses include “tail” and  

diode reverse recovery.  

Turn-off delay time  

Fall time  

156  

13  

ns  

ns  

Turn-on energy  

E

on  

E

off  

E

ts  

0.17  

0.06  

0.23  

mJ  

mJ  

mJ  

Turn-off energy  

Total switching energy  

5

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

16  

3

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ25°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ2.0A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

r

G

ꢀ=ꢀ32.0

Ω

,ꢀ

L

σ

ꢀ=ꢀ30nH,  

C

σ

ꢀ=ꢀ30pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

Energy losses include “tail” and  

diode reverse recovery.  

Turn-off delay time  

Fall time  

168  

36  

ns  

ns  

Turn-on energy  

Turn-off energy  

Total switching energy  

E

on  

E

off  

E

ts  

0.04  

0.02  

0.06  

mJ  

mJ  

mJ  

DiodeꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ25°C  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

52  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ25°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ10.0A,  

di

F

/dt

ꢀ=ꢀ1200A/µs  

Q

rr  

0.27  

10.4  

Diode peak reverse recovery current

I

rrm  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-254  

–

A/µs  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

24  

0.11  

7.9  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ25°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ2.0A,  

Q

rr  

Diode peak reverse recovery current

I

rrm  

di

F

/dt

ꢀ=ꢀ900A/µs  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-660  

–

A/µs  

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  

Value  

Parameter  

Symbol Conditions  

Unit  

min. typ. max.  

IGBTꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ150°C  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

17  

11  

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ150°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ10.0A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

r

G

ꢀ=ꢀ32.0

Ω

,ꢀ

L

σ

ꢀ=ꢀ30nH,  

C

σ

ꢀ=ꢀ30pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

Energy losses include “tail” and  

diode reverse recovery.  

Turn-off delay time  

Fall time  

190  

28  

ns  

ns  

Turn-on energy  

E

on  

E

off  

E

ts  

0.27  

0.11  

0.38  

mJ  

mJ  

mJ  

Turn-off energy  

Total switching energy  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

15  

4

–

–

–

–

–

–

–

ns  

ns  

T

vj

ꢀ=ꢀ150°C,  

V

CC

ꢀ=ꢀ400V,ꢀ

I

C

ꢀ=ꢀ2.0A,  

V

GE

ꢀ=ꢀ0.0/15.0V,  

r

G

ꢀ=ꢀ32.0

Ω

,ꢀ

L

σ

ꢀ=ꢀ30nH,  

C

σ

ꢀ=ꢀ30pF  

L

σ

,ꢀ

C

σ

ꢀfromꢀFig.ꢀE  

Energy losses include “tail” and  

diode reverse recovery.  

Turn-off delay time  

Fall time  

224  

55  

ns  

ns  

Turn-on energy  

Turn-off energy  

Total switching energy  

E

on  

E

off  

E

ts  

0.08  

0.04  

0.12  

mJ  

mJ  

mJ  

6

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

DiodeꢀCharacteristic,ꢀatꢀ

T

vj

ꢀ=ꢀ150°C  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

89  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ150°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ10.0A,  

Q

rr  

0.63  

13.3  

Diode peak reverse recovery current

I

rrm  

di

F

/dt

ꢀ=ꢀ1000A/µs  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-191  

–

A/µs  

Diode reverse recovery time  

Diode reverse recovery charge  

t

rr  

–

–

–

47  

–

–

–

ns  

µC  

A

T

vj

ꢀ=ꢀ150°C,  

V

R

ꢀ=ꢀ400V,  

I

F

ꢀ=ꢀ2.0A,  

Q

rr  

0.29  

11.4  

Diode peak reverse recovery current

I

rrm  

di

F

/dt

ꢀ=ꢀ800A/µs  

Diode peak rate of fall of reverse  

recoveryꢀcurrentꢀduringꢀ

t

b  

di

rr

/dt  

–

-402  

–

A/µs  

7

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

100  

10  

1

130  

120  

110  

100  

90  

80  

DC  

70  

60  

50  

40  

30  

20  

10  

0.1  

0

1

10  

100  

1000  

25  

50  

75  

100  

125  

150  

175  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

T

C

,ꢀCASEꢀTEMPERATUREꢀ[°C]  

Figure 1.

Forwardꢀbiasꢀsafeꢀoperatingꢀarea  

(

D

=0,ꢀ

T

C

=25°C,ꢀ

T

vj

≤

175°C;ꢀ

V

GE

=15V.  

Recommendedꢀuseꢀatꢀ

V

GE

≥

7.5V)  

Figure 2.

Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  

temperature  

(

T

vj

≤

175°C)  

45  

40  

35  

30  

25  

20  

15  

10  

5

60  

55  

50  

V

GE

=18V  

45  

15V  

40  

12V  

35  

10V  

30  

25  

20  

15  

10  

5

8V  

7V  

6V  

5V  

0

0

25  

50  

75  

100  

125  

150  

175  

0

1

2

3

4

5

T

C

,ꢀCASEꢀTEMPERATUREꢀ[°C]  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

Figure 3.

Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  

temperature  

Figure 4.

Typicalꢀoutputꢀcharacteristic  

(

T

vj

=25°C)  

(

V

GE

≥

15V,ꢀ

T

vj

≤

175°C)  

8

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

60  

55  

50  

45  

40  

35  

30  

25  

20  

15  

10  

5

60  

55  

50  

45  

40  

35  

30  

25  

20  

15  

10  

5

T

j

=25°C  

T

j

=150°C  

V

GE

=18V  

15V  

12V  

10V  

8V  

7V  

6V  

5V  

4V  

0

0

0

1

2

3

4

5

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

V

GE

,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  

Figure 5.

Typicalꢀoutputꢀcharacteristic  

(

T

vj

=150°C)  

Figure 6.

Typicalꢀtransferꢀcharacteristic  

(

V

CE

=20V)  

2.00  

I

C

=5A  

I

C

=10A  

I

C

=20A  

t

d(off)  

t

f  

t

d(on)  

t

r  

1.75  

1.50  

1.25  

1.00  

0.75  

0.50  

100  

10  

1

0

25  

50  

75  

100  

125  

150  

175  

0

5

10 15 20 25 30 35 40 45 50 55 60  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

I

C

,ꢀCOLLECTORꢀCURRENTꢀ[A]  

Figure 7.

Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas

Figure 8.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  

aꢀfunctionꢀofꢀjunctionꢀtemperature  

collectorꢀcurrent  

(

V

GE

=15V)  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

CE

=400V,  

V

GE

=15/0V,ꢀ

r

G

=32

Ω

,ꢀDynamicꢀtestꢀcircuitꢀin  

Figure E)  

9

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

1000  

100  

10  

t

d(off)  

t

f  

t

d(on)  

t

r  

t

d(off)  

t

f  

t

d(on)  

t

r  

100  

10  

1

1

10 20 30 40 50 60 70 80 90

 

100 110 120  

25  

50  

75  

100  

125  

150  

175  

r

G

,ꢀGATEꢀRESISTORꢀ[

Ω

]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 9.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate

Figure 10.

Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  

resistor  

junctionꢀtemperature  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

CE

=400V,  

V

GE

=15/0V,ꢀ

I

C

=10A,Dynamicꢀtestꢀcircuitꢀin  

Figure E)  

(inductiveꢀload,ꢀ

V

CE

=400V,ꢀ

V

GE

=15/0V,  

I

C

=10A,ꢀ

r

G

=32

Ω

,Dynamicꢀtestꢀcircuitꢀin  

Figure E)  

6.0  

5.5  

5.0  

4.5  

4.0  

3.5  

3.0  

2.5  

2.0  

1.5  

1.0  

3.0  

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

typ.  

min.  

max.  

E

off  

E

on  

E

ts  

0

25  

50  

75  

100  

125  

150  

0

5

10 15 20 25 30 35 40 45 50 55 60  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

I

C

,ꢀCOLLECTORꢀCURRENTꢀ[A]  

Figure 11.

Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction

Figure 12.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

ofꢀjunctionꢀtemperature  

(

I

C

=0.2mA)  

functionꢀofꢀcollectorꢀcurrent  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

CE

=400V,  

V

GE

=15/0V,ꢀ

r

G

=32

Ω

,Dynamicꢀtestꢀcircuitꢀin  

Figure E)  

10  

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

0.50  

0.45  

0.40  

0.35  

0.30  

0.25  

0.20  

0.15  

0.10  

0.05  

0.00  

E

off  

E

on  

E

ts  

E

off  

E

on  

E

ts  

10 20 30 40 50 60 70 80 90

 

100 110 120  

25  

50  

75  

100  

125  

150  

175  

r

G

,ꢀGATEꢀRESISTORꢀ[

Ω

]  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 13.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀgateꢀresistor  

Figure 14.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀjunctionꢀtemperature  

(inductiveꢀload,ꢀ

V

CE

=400V,ꢀ

V

GE

=15/0V,  

I

C

=10A,ꢀ

r

G

=32

Ω

,Dynamicꢀtestꢀcircuitꢀin  

Figure E)  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

CE

=400V,  

V

GE

=15/0V,ꢀ

I

C

=10A,ꢀDynamicꢀtestꢀcircuitꢀin  

Figure E)  

0.50  

16  

E

off  

E

on  

130V  

520V  

0.45  

E

ts  

14  

12  

10  

8

0.40  

0.35  

0.30  

0.25  

0.20  

0.15  

0.10  

0.05  

0.00  

6

4

2

0

200  

250  

300  

350  

400  

450  

500  

0

5

10 15 20 25 30 35 40 45 50  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

Q

GE

,ꢀGATEꢀCHARGEꢀ[nC]  

Figure 15.

Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  

functionꢀofꢀcollectorꢀemitterꢀvoltage  

(inductiveꢀload,ꢀ

T

vj

=150°C,ꢀ

V

GE

=15/0V,  

I

C

=10A,ꢀ

r

G

=32

Ω

,Dynamicꢀtestꢀcircuitꢀin  

Figure E)  

Figure 16.

Typicalꢀgateꢀcharge  

(

I

C

=20A)  

11  

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

1E+4  

1000  

100  

10  

C

ies  

C

oes  

C

res  

1

D=0.5  

0.2  

0.1  

0.05  

0.1  

0.02  

0.01  

single pulse  

0.01  

i:  

1

2

3

4

r

i

[K/W]: 0.2392053 0.410959 0.4430167

 

0.1066175  

τ

i

[s]:  

1.4E-4  

1.2E-3  

0.01493292 0.1213884  

1

0.001  

1E-7  

0

5

10  

15  

20  

25  

30  

1E-6  

1E-5  

1E-4  

0.001  

0.01  

0.1  

V

CE

,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  

t

p

,ꢀPULSEꢀWIDTHꢀ[s]  

Figure 17.

Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  

collector-emitterꢀvoltage  

Figure 18.

IGBTꢀtransientꢀthermalꢀimpedance  

(

D

=

t

p

/T)  

(

V

GE

=0V,ꢀf=1MHz)  

130  

T

j

=25°C, I

F

= 10A  

T

j

=150°C, I

F

= 10A  

120  

1

110  

100  

90  

D=0.5  

0.2  

0.1  

0.05  

0.1  

0.02  

0.01  

80  

single pulse  

70  

60  

0.01  

50  

40  

i:  

r

i

[K/W]: 0.2955981 0.7867872 0.7353328 0.3659654  

τ

i

[s]: 8.9E-5

 

6.5E-4 5.5E-3 0.05080561  

1

2

3

4

0.001  

1E-7  

30  

300  

1E-6  

1E-5  

1E-4  

0.001  

0.01  

0.1  

700  

1100  

1500  

1900  

2300  

2700  

t

p

,ꢀPULSEꢀWIDTHꢀ[s]  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

Figure 19.

Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  

Figure 20.

Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction  

ofꢀdiodeꢀcurrentꢀslope  

functionꢀofꢀpulseꢀwidth  

(

D

=

t

p

/T)  

(

V

R

=400V)  

12  

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

18  

16  

14  

12  

10  

8

T

j

=25°C, I

F

= 10A  

T

j

=150°C, I

F

= 10A  

T

j

=25°C, I

F

= 10A  

T

j

=150°C, I

F

= 10A  

6

4

2

0

300  

700  

1100  

1500  

1900  

2300  

2700  

300  

700  

1100  

1500  

1900  

2300  

2700  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

Figure 21.

Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa  

functionꢀofꢀdiodeꢀcurrentꢀslope  

(

V

R

=400V)  

Figure 22.

Typicalꢀpeakꢀreverseꢀrecoveryꢀcurrentꢀasꢀa  

functionꢀofꢀdiodeꢀcurrentꢀslope  

(

V

R

=400V)  

0

40  

T

j

=25°C, I

F

= 10A  

T

j

=25°C  

T

j

=150°C, I

F

= 10A  

T

j

=150°C  

-50  

35  

30  

25  

20  

15  

10  

5

-100  

-150  

-200  

-250  

-300  

-350  

-400  

-450  

-500  

0

300  

700  

1100  

1500  

1900  

2300  

2700  

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00  

di

F

/dt

,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  

V

F

,ꢀFORWARDꢀVOLTAGEꢀ[V]  

Figure 23.

Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse  

recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode  

currentꢀslope  

Figure 24.

Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction  

ofꢀforwardꢀvoltage  

(

V

R

=400V)  

13  

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

2.00  

1.75  

1.50  

1.25  

1.00  

0.75  

I

F

=10A  

I

F

=20A  

I

F

=40A  

25  

50  

75  

100  

125  

150  

175  

T

vj

,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  

Figure 25.

Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  

ofꢀjunctionꢀtemperature  

14  

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

PG-TO220-3  

15  

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  

v

GE

(t)  

90%

V

GE  

a

b

a

b

10%

V

GE  

t

i

C

(t)  

90%

I

C  

10%

I

C  

90%

I

C  

10%

I

C  

t

v

CE

(t)  

t

t

t

d(off)  

t

f  

t

d(on)  

t

r  

v

GE

(t)  

90%

V

GE  

10%

V

GE  

t

i

C

(t)  

CC  

2%

I

C  

t

v

CE

(t)  

t

2  

t

4  

E

=

V

CE

x

I

C

x d

t  

E

=

on  

V

CE

x

I

C

x d

t  

off  

∫

∫

2%

V

CE  

t

1  

t

3  

t

t

1  

t

2  

t

3  

t

4  

16  

Rev.ꢀ2.1,ꢀꢀ2014-06-11  

IKP20N65H5  

High speed switching series fifth generation  

Revision History  

IKP20N65H5  

Revision: 2014-06-11, Rev. 2.1  

Previous Revision  

Revision Date  

Subjects (major changes since last revision)  

2.1  

2014-06-11 Final

 

data sheet  

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81726 München, Germany  

© 2014 Infineon Technologies AG  

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17  

Rev. 2.1,

 

2014-06-11