Infineon-Technologies-IKW15N120H3
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IGBT
HighꢀspeedꢀDuoPack:ꢀIGBTꢀinꢀTrenchꢀandꢀFieldstopꢀtechnologyꢀwithꢀsoft,ꢀfastꢀrecoveryꢀ
anti-parallelꢀdiode
IKW15N120H3
1200Vꢀhighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
HighꢀspeedꢀDuoPack:ꢀIGBTꢀinꢀTrenchꢀandꢀFieldstopꢀtechnologyꢀwithꢀsoft,ꢀfast
recoveryꢀanti-parallelꢀdiode
ꢀ
C
Features:
TRENCHSTOP
TM
ꢀtechnologyꢀoffering
•ꢀveryꢀlowꢀV
CEsat
•ꢀlowꢀEMI
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀdiode
•ꢀmaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀcompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
G
E
Applications:
•ꢀuninterruptibleꢀpowerꢀsupplies
•ꢀweldingꢀconverters
•ꢀconvertersꢀwithꢀhighꢀswitchingꢀfrequency
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
V
CE
I
C
V
CEsat
,ꢀ
T
vj
=25°C
T
vjmax
2.05V 175°C
Marking
Package
IKW15N120H3
1200V
15A
K15H1203
PG-TO247-3
2
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
15
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
7
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CE
1200
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°C
T
C
ꢀ=ꢀ100°C
I
C
30.0
15.0
A
Pulsedꢀcollectorꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Cpuls
60.0
60.0
A
A
Turnꢀoffꢀsafeꢀoperatingꢀareaꢀ
V
CE
ꢀ
≤
ꢀ1200V,ꢀ
T
vj
ꢀ
≤
ꢀ175°C
–
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°C
T
C
ꢀ=ꢀ100°C
I
F
15.0
7.5
A
Diodeꢀpulsedꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Fpuls
V
GE
60.0
±20
A
V
Gate-emitter voltage
Short circuit withstand time
V
GE
ꢀ=ꢀ15.0V,ꢀ
V
CC
ꢀ
≤
ꢀ600V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
ꢀ=ꢀ175°C
t
SC
µs
10
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ25°C
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ100°C
217.0
105.0
P
tot
W
Operating junction temperature
Storage temperature
T
vj
-40…+175
-55…+150
°C
°C
T
stg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
th(j-c)
R
th(j-c)
R
th(j-a)
0.70
2.12
40
K/W
K/W
K/W
Diode thermal resistance,
junction – case
Thermal resistance
junction – ambient
4
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
ꢀ=ꢀ0V,ꢀ
I
C
ꢀ=ꢀ0.50mA
V
GE
ꢀ=ꢀ15.0V,ꢀ
I
C
ꢀ=ꢀ15.0A
T
vj
ꢀ=ꢀ25°C
Collector-emitter saturation voltage
V
CEsat
T
vj
ꢀ=ꢀ125°C
1200
–
–
V
V
–
–
–
2.05 2.40
2.50
2.70
–
–
T
vj
ꢀ=ꢀ175°C
V
GE
ꢀ=ꢀ0V,ꢀ
I
F
ꢀ=ꢀ7.5A
Diode forward voltage
V
F
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
–
–
1.80 2.35
1.85
V
–
V
GE
ꢀ=ꢀ0V,ꢀ
I
F
ꢀ=ꢀ15.0A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ125°C
–
–
–
2.40 3.05
Diode forward voltage
V
F
V
V
2.60
2.60
–
–
T
vj
ꢀ=ꢀ175°C
Gate-emitter threshold voltage
V
GE(th)
I
C
ꢀ=ꢀ0.50mA,ꢀ
V
CE
ꢀ=ꢀ
V
GE
5.0
5.8
6.5
V
CE
ꢀ=ꢀ1200V,ꢀ
V
GE
ꢀ=ꢀ0V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Zero gate voltage collector current
I
CES
–
–
–
–
250.0 µA
2500.0
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
ꢀ=ꢀ0V,ꢀ
V
GE
ꢀ=ꢀ20V
V
CE
ꢀ=ꢀ20V,ꢀ
I
C
ꢀ=ꢀ15.0A
–
–
–
600
–
nA
S
7.5
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
C
ies
–
–
–
875
75
–
–
–
Output capacitance
C
oes
C
res
V
CE
ꢀ=ꢀ25V,ꢀ
V
GE
ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
45
V
CC
ꢀ=ꢀ960V,ꢀ
I
C
ꢀ=ꢀ15.0A,
V
GE
ꢀ=ꢀ15V
Gate charge
Q
G
L
E
–
–
75.0
13.0
–
–
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits:
≥
1.0s
V
GE
ꢀ=ꢀ15.0V,ꢀ
V
CC
ꢀ
≤
ꢀ600V,
t
SC
ꢀ
≤
ꢀ10µs
T
vj
ꢀ=ꢀ175°C
I
C(SC)
–
–
A
52
5
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
21
34
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ600V,ꢀ
I
C
ꢀ=ꢀ15.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ35.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ35.0
Ω
,
L
σ
ꢀ=ꢀ95nH,ꢀ
C
σ
ꢀ=ꢀ67pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
260
14
ns
ns
Turn-on energy
E
on
E
off
E
ts
1.10
0.45
1.55
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
260
0.80
7.7
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ25°C,
V
R
ꢀ=ꢀ600V,
I
F
ꢀ=ꢀ15.0A,
Q
rr
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ500A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-110
–
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
19
30
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ175°C,
V
CC
ꢀ=ꢀ600V,ꢀ
I
C
ꢀ=ꢀ15.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ35.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ35.0
Ω
,
L
σ
ꢀ=ꢀ95nH,ꢀ
C
σ
ꢀ=ꢀ67pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
327
43
ns
ns
Turn-on energy
E
on
E
off
E
ts
1.60
0.90
2.50
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
470
1.70
9.8
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ175°C,
V
R
ꢀ=ꢀ600V,
I
F
ꢀ=ꢀ15.0A,
Q
rr
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ500A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-80
–
A/µs
6
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
70
60
50
40
30
20
10
0
100
10
1
t
p
=1µs
10µs
50µs
T
C
=80°
T
C
=110°
T
C
=80°
100µs
200µs
500µs
DC
T
C
=110°
0.1
1
10
100
1000
1
10
100
1000
f
,ꢀSWITCHINGꢀFREQUENCYꢀ[kHz]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 1.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀswitching
Figure 2.
Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(
D
=0,ꢀ
T
C
=25°C,ꢀ
T
j
≤
175°C;ꢀ
V
GE
=15V)
frequency
(
T
j
≤
175°C,ꢀ
D
=0.5,ꢀ
V
CE
=600V,ꢀ
V
GE
=15/0V,
r
G
=35
Ω
)
250
200
150
100
50
30
20
10
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 3.
Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 4.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(
T
j
≤
175°C)
(
V
GE
≥
15V,ꢀ
T
j
≤
175°C)
7
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
60
45
30
15
0
60
45
30
15
0
V
GE
=20V
17V
15V
13V
11V
9V
V
GE
=20V
17V
15V
13V
11V
9V
7V
7V
5V
5V
0
2
4
6
0
2
4
6
8
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 5.
Typicalꢀoutputꢀcharacteristic
(
T
j
=25°C)
Figure 6.
Typicalꢀoutputꢀcharacteristic
(
T
j
=175°C)
60
5.0
T
j
=25°C
T
j
=175°C
I
C
=7.5A
I
C
=15A
I
C
=30A
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
45
30
15
0
5
10
15
0
25
50
75
100
125
150
175
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7.
Typicalꢀtransferꢀcharacteristic
(
V
CE
=20V)
Figure 8.
Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(
V
GE
=15V)
8
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
1000
100
10
1000
100
10
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
0
5
10
15
20
25
30
10
30
50
70
90
110
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
r
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
Figure 9.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 10.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=600V,ꢀ
V
GE
=15/0V,
r
G
=35
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=600V,ꢀ
V
GE
=15/0V,
I
C
=15A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
1000
7
t
d(off)
t
f
t
d(on)
t
r
typ.
min.
max.
6
5
4
3
2
100
10
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 11.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 12.
Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(ind.ꢀload,ꢀ
V
CE
=600V,ꢀ
V
GE
=15/0V,ꢀ
I
C
=15A,
r
G
=35
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(
I
C
=0.5mA)
9
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
7
6
5
4
3
2
1
0
5
4
3
2
1
0
E
off
E
on
E
ts
E
off
E
on
E
ts
0
5
10
15
20
25
30
10
30
50
70
90
110
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
r
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
Figure 13.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
Figure 14.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
functionꢀofꢀcollectorꢀcurrent
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=600V,ꢀ
V
GE
=15/0V,
r
G
=35
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=600V,ꢀ
V
GE
=15/0V,
I
C
=15A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
2.5
2.0
1.5
1.0
0.5
0.0
3.5
E
off
E
on
E
ts
E
off
E
on
E
ts
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
400
500
600
700
800
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
Figure 16.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
GE
=15/0V,ꢀ
I
C
=15A,
r
G
=35
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(indꢀload,ꢀ
V
CE
=600V,ꢀ
V
GE
=15/0V,ꢀ
I
C
=15A,
r
G
=35
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
10
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
16
14
12
10
8
240V
960V
1000
100
10
C
ies
C
oes
C
res
6
4
2
0
0
10
20
30
40
50
60
70
80
0
10
20
30
Q
GE
,ꢀGATEꢀCHARGEꢀ[nC]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 17.
Typicalꢀgateꢀcharge
(
I
C
=15A)
Figure 18.
Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(
V
GE
=0V,ꢀf=1MHz)
90
80
70
60
50
40
30
20
10
50
40
30
20
10
0
10
12
14
16
18
10
12
14
16
18
20
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 19.
Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 20.
Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(
V
CE
≤
600V,ꢀstartꢀat
T
j
=25°C)
(
V
CE
≤
600V,ꢀstartꢀatꢀ
T
j
≤
150°C)
11
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
1
1
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.1
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
r
i
[K/W]: 3.9E-3 0.15885 0.23655 0.2763
τ
i
[s]: 1.6E-5
3.0E-4 2.9E-3 0.01490178
0.1582781
1
2
3
4
5
i:
1
2
3
4
5
0.015225
r
i
[K/W]: 0.67965 0.8319 0.51885 0.08454
τ
i
[s]:
9.7E-3
2.5E-4
1.5E-3 8.7E-3
0.03938437 0.2738978
0.001
1E-6
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
1E-5
1E-4
0.001
0.01
0.1
1
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
Figure 21.
IGBTꢀtransientꢀthermalꢀimpedance
(
D
=
t
p
/T)
Figure 22.
Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(
D
=
t
p
/T)
800
2.5
T
j
=25°C, I
F
= 15A
T
j
=175°C, I
F
= 15A
T
j
=25°C, I
F
= 15A
T
j
=175°C, I
F
= 15A
700
600
500
400
300
200
2.0
1.5
1.0
0.5
0.0
100
300
500
700
900
1100
100
300
500
700
900
1100
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23.
Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
Figure 24.
Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=600V)
(
V
R
=600V)
12
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
15
12
9
0
T
j
=25°C, I
F
= 15A
T
j
=175°C, I
F
= 15A
T
j
=25°C, I
F
= 15A
T
j
=175°C, I
F
= 15A
-50
-100
-150
-200
6
3
0
100
300
500
700
900
1100
100
300
500
700
900
1100
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 25.
Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=600V)
Figure 26.
Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(
V
R
=600V)
50
4.0
T
j
=25°C
T
j
=175°C
I
F
=3.75A
I
F
=7.5A
I
F
=15A
3.5
3.0
2.5
2.0
1.5
1.0
40
30
20
10
0
0
1
2
3
4
0
25
50
75
100
125
150
175
V
F
,ꢀFORWARDꢀVOLTAGEꢀ[V]
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27.
Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
Figure 28.
Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
13
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
PG-TO247-3
14
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
v
GE
(t)
I,V
90%
V
GE
a
b
dI
F
/dt
a
b
10%
V
GE
t
I
C
(t)
dI
90%
I
C
10%
I
C
90%
I
C
10%
I
C
Figure C.
Definition of diode switching
t
characteristics
v
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
Figure A.
v
GE
(t)
90%
V
GE
Figure D.
10%
V
GE
t
I
C
(t)
CC
2%
I
C
t
v
CE
(t)
Figure E.
Dynamic test circuit
Parasitic inductance L
,
s
parasitic capacitor L
,
s
relief capacitor C ,
r
t
2
t
4
(only for ZVT switching)
E
=
V
CE
x
I
C
x d
t
E
=
V
CE
x
I
C
x d
t
off
on
2%
V
CE
t
1
t
3
t
t
1
t
2
t
3
t
4
Figure B.
15
Rev.ꢀ2.1,ꢀꢀ2014-12-01
IKW15N120H3
High speed switching series third generation
Revision History
IKW15N120H3
Revision: 2014-12-01, Rev. 2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
1.1
1.2
2.1
2009-11-27
2010-02-10
–
–
2014-12-01 Final
data sheet
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© 2014 Infineon Technologies AG
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16
Rev. 2.1,
2014-12-01
