Infineon-Technologies-IKW30N65EL5
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IGBT
LowꢀV
CE(sat)
ꢀIGBTꢀinꢀTRENCHSTOP
TM
ꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiparallelꢀdiode
IKW30N65EL5
650VꢀDuoPackꢀIGBTꢀandꢀdiode
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
LowꢀV
CE(sat)
ꢀIGBTꢀinꢀTRENCHSTOP
TM
ꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiparallelꢀdiode
ꢀ
C
FeaturesꢀandꢀBenefits:
LowꢀV
CE(sat)
ꢀL5ꢀtechnologyꢀoffering
•ꢀVeryꢀlowꢀcollector-emitterꢀsaturationꢀvoltageꢀV
CEsat
•ꢀBest-in-Classꢀtradeoffꢀbetweenꢀconductionꢀandꢀswitchingꢀlosses
•ꢀ650Vꢀbreakdownꢀvoltage
G
•ꢀLowꢀgateꢀchargeꢀQ
G
E
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating
•ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀmodels:
Applications:
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀSolarꢀphotovoltaicꢀinverters
•ꢀWeldingꢀmachines
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
V
CE
I
C
V
CEsat
,ꢀ
T
vj
=25°C
T
vjmax
1.05V 175°C
Marking
Package
IKW30N65EL5
650V
30A
K30EEL5
PG-TO247-3
2
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
14
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
6
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀ
T
vj
ꢀ
≥
ꢀ25°C
V
CE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
T
C
ꢀ=ꢀ100°C
I
C
85.0
62.0
A
1)
Pulsedꢀcollectorꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Cpuls
120.0
120.0
A
A
Turn off safe operating area
–
V
CE
ꢀ
≤
ꢀ650V,ꢀ
T
vj
ꢀ
≤
ꢀ175°C,ꢀ
t
p
ꢀ=ꢀ1µs
1)
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
T
C
ꢀ=ꢀ100°C
I
F
50.0
41.0
A
1)
Diodeꢀpulsedꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Fpuls
V
GE
120.0
A
V
Gate-emitter voltage
±20
±30
TransientꢀGate-emitterꢀvoltageꢀ(
t
p
ꢀ
≤
ꢀ10µs,ꢀDꢀ<ꢀ0.010)
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ25°C
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ100°C
227.0
114.0
P
tot
W
Operating junction temperature
Storage temperature
T
vj
-40…+175
-55…+150
°C
°C
T
stg
Soldering temperature,
2)
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
th(j-c)
R
th(j-c)
R
th(j-a)
0.66
0.95
40
K/W
K/W
K/W
Diode thermal resistance,
junction – case
Thermal resistance
junction – ambient
1)
Defined by design. Not subject to production test.
2)
Package not recommended for surface mount applications.
4
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Unit
min. typ. max.
Parameter
Symbol Conditions
StaticꢀCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
ꢀ=ꢀ0V,ꢀ
I
C
ꢀ=ꢀ0.20mA
V
GE
ꢀ=ꢀ15.0V,ꢀ
I
C
ꢀ=ꢀ30.0A
T
vj
ꢀ=ꢀ25°C
Collector-emitter saturation voltage
V
CEsat
T
vj
ꢀ=ꢀ100°C
650
–
–
V
V
–
–
–
1.05 1.35
1.05
1.04
–
–
T
vj
ꢀ=ꢀ150°C
V
GE
ꢀ=ꢀ0V,ꢀ
I
F
ꢀ=ꢀ30.0A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ100°C
T
vj
ꢀ=ꢀ150°C
–
–
–
1.35 1.70
Diode forward voltage
V
F
V
V
1.32
1.28
–
–
Gate-emitter threshold voltage
V
GE(th)
I
C
ꢀ=ꢀ0.40mA,ꢀ
V
CE
ꢀ=ꢀ
V
GE
4.2
5.0
5.8
V
CE
ꢀ=ꢀ650V,ꢀ
V
GE
ꢀ=ꢀ0V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ150°C
–
40.0
–
–
Zero gate voltage collector current
I
CES
–
–
µA
400.0
2000.0
T
vj
ꢀ=ꢀ175°C
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
ꢀ=ꢀ0V,ꢀ
V
GE
ꢀ=ꢀ20V
V
CE
ꢀ=ꢀ20V,ꢀ
I
C
ꢀ=ꢀ30.0A
–
–
–
100
–
nA
S
65.0
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
C
ies
–
–
–
4600
64
–
–
–
Output capacitance
C
oes
C
res
V
CE
ꢀ=ꢀ25V,ꢀ
V
GE
ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
18
V
CC
ꢀ=ꢀ520V,ꢀ
I
C
ꢀ=ꢀ30.0A,
V
GE
ꢀ=ꢀ15V
Gate charge
Q
G
L
E
–
–
168.0
13.0
–
–
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
33
11
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ30.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ10.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ10.0
Ω
,
L
σ
ꢀ=ꢀ60nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
308
51
ns
ns
Turn-on energy
E
on
E
off
E
ts
0.47
1.35
1.82
mJ
mJ
mJ
Turn-off energy
Total switching energy
5
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
87
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ25°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ30.0A,
di
F
/dt
ꢀ=ꢀ1500A/µs
Q
rr
0.91
21.0
Diode peak reverse recovery current
I
rrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-1250
–
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ150°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
31
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ150°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ30.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ10.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ10.0
Ω
,
L
σ
ꢀ=ꢀ60nH,ꢀ
C
σ
ꢀ=ꢀ30pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
13
Turn-off delay time
Fall time
370
150
0.68
2.18
2.86
ns
ns
Turn-on energy
E
on
E
off
E
ts
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
100
1.91
28.0
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ150°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ30.0A,
Q
rr
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ1500A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-1075
–
A/µs
6
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
250
225
200
175
150
125
100
75
100
10
1
50
25
not for linear use
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1.
Forwardꢀbiasꢀsafeꢀoperatingꢀarea
Figure 2.
Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
(
D
=0,ꢀ
T
C
=25°C,ꢀ
T
vj
≤
175°C,ꢀ
V
GE
=15V,ꢀ
t
p
=1µs,
I
Cmax
ꢀdefinedꢀbyꢀdesignꢀ-ꢀnotꢀsubjectꢀto
production test)
temperature
(
T
vj
≤
175°C)
90
80
70
60
50
40
30
20
10
0
90
V
GE
= 20V
18V
15V
12V
10V
8V
80
70
60
50
40
30
20
10
0
7V
6V
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=25°C)
(
V
GE
≥
15V,ꢀ
T
vj
≤
175°C)
7
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
90
80
70
60
50
40
30
20
10
0
90
V
GE
= 20V
18V
15V
12V
10V
8V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ150°C
80
70
60
50
40
30
20
10
0
7V
6V
5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2
3
4
5
6
7
8
9
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=175°C)
Figure 6.
Typicalꢀtransferꢀcharacteristic
(
V
CE
=20V)
1.3
I
C
ꢀ=ꢀ7.5A
I
C
ꢀ=ꢀ15A
I
C
ꢀ=ꢀ30A
t
d(off)
t
f
t
d(on)
t
r
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1000
100
10
1
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
90
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7.
Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
Figure 8.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(
V
GE
=15V)
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
R
G(on)
=10
Ω
,ꢀ
R
G(off)
=10
Ω
,ꢀdynamic
test circuit in Figure E)
8
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
1000
1000
100
10
100
10
1
1
0
10
20
30
40
50
60
70
25
50
75
100
125
150
175
R
G
,ꢀGATEꢀRESISTANCEꢀ[
Ω
]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
Figure 10.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistance
junctionꢀtemperature
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
I
C
=30A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=0/15V,
I
C
=30A,ꢀ
R
G(on)
=10
Ω
,ꢀ
R
G(off)
=10
Ω
,ꢀdynamic
test circuit in Figure E)
7
6
5
4
3
2
1
8
7
6
5
4
3
2
1
0
typ.
min.
max.
E
off
E
on
E
ts
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
90
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11.
Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
Figure 12.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
functionꢀofꢀcollectorꢀcurrent
(
I
C
=0.4mA)
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
R
G(on)
=10
Ω
,ꢀ
R
G(off)
=10
Ω
,
dynamic test circuit in Figure E)
9
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
3.2
E
off
E
on
E
ts
E
off
E
on
E
ts
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
10
20
30
40
50
60
70
25
50
75
100
125
150
175
R
G
,ꢀGATEꢀRESISTANCEꢀ[
Ω
]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
Figure 14.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=0/15V,
I
C
=30A,ꢀ
R
G(on)
=10
Ω
,ꢀ
R
G(off)
=10
Ω
,ꢀdynamic
test circuit in Figure E)
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
CE
=400V,
V
GE
=0/15V,ꢀ
I
C
=30A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
3.6
16
E
off
E
on
E
ts
V
CC
ꢀ=ꢀ130V
V
CC
ꢀ=ꢀ520V
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
14
12
10
8
6
4
2
0
200
250
300
350
400
450
500
0
30
60
90
120
150
180
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Q
G
,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀ
T
vj
=150°C,ꢀ
V
GE
=0/15V,
I
C
=30A,ꢀ
R
G(on)
=10
Ω
,ꢀ
R
G(off)
=10
Ω
,ꢀdynamic
test circuit in Figure E)
Figure 16.
Typicalꢀgateꢀcharge
(
I
C
=30A)
10
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
1
C
ies
C
oes
C
res
1E+4
1000
100
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
6
r
i
[K/W]: 0.0107 0.15506 0.17294 0.29017 0.02714 2.2E-3
τ
i
[s]:
2.0E-5 2.2E-4
2.0E-3
0.01147 0.09256 1.82712
10
0.001
1E-6
0
5
10
15
20
25
30
1E-5
1E-4
0.001
0.01
0.1
1
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17.
Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18.
IGBTꢀtransientꢀthermalꢀimpedance
(
D
=
t
p
/T)
(
V
GE
=0V,ꢀf=1MHz)
1
150
T
vj
ꢀ=ꢀ25°C,ꢀ
I
F
ꢀ=ꢀ30A
T
vj
ꢀ=ꢀ150°C,ꢀ
I
F
ꢀ=ꢀ30A
140
130
120
110
100
90
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
80
0.01
70
60
50
i:
1
2
3
4
5
6
40
r
i
[K/W]: 0.031494 0.220947 0.291265 0.366808 0.03663 2.3E-3
τ
i
[s]:
2.5E-5
2.1E-4
1.7E-3
0.010113 0.08082 1.811337
0.001
30
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
1000
1500
2000
2500
3000
3500
4000
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
dI
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19.
Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20.
Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(
D
=
t
p
/T)
(
V
R
=400V)
11
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
50
T
vj
ꢀ=ꢀ25°C,ꢀ
I
F
ꢀ=ꢀ30A
T
vj
ꢀ=ꢀ150°C,ꢀ
I
F
ꢀ=ꢀ30A
T
vj
ꢀ=ꢀ25°C,ꢀ
I
F
ꢀ=ꢀ30A
T
vj
ꢀ=ꢀ150°C,ꢀ
I
F
ꢀ=ꢀ30A
45
40
35
30
25
20
15
10
5
0
1000
1500
2000
2500
3000
3500
4000
1000
1500
2000
2500
3000
3500
4000
dI
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
dI
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21.
Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
Figure 22.
Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
-500
90
T
vj
ꢀ=ꢀ25°C,ꢀ
I
F
ꢀ=ꢀ30A
T
vj
ꢀ=ꢀ150°C,ꢀ
I
F
ꢀ=ꢀ30A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
80
-750
-1000
-1250
-1500
-1750
-2000
-2250
70
60
50
40
30
20
10
0
1000
1500
2000
2500
3000
3500
4000
0.0
0.5
1.0
1.5
2.0
2.5
dI
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
V
F
,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 23.
Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 24.
Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(
V
R
=400V)
12
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
F
ꢀ=ꢀ7.5A
I
F
ꢀ=ꢀ15A
I
F
ꢀ=ꢀ30A
25
50
75
100
125
150
175
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25.
Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
13
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
PG-TO247-3
14
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
LowꢀV
CE(sat)
ꢀseriesꢀfifthꢀgeneration
V
GE
(t)
I,V
90%
V
GE
t
rr
=
t
a
+
t
b
Q
rr
=
Q
a
+
Q
b
dI
F
/dt
a
b
10%
V
GE
t
Q
a
Q
b
I
C
(t)
dI
90%
I
C
10%
I
C
90%
I
C
10%
I
C
Figure C.
Definition of diode switching
t
characteristics
V
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
Figure A.
V
GE
(t)
90%
V
GE
Figure D.
10%
V
GE
t
I
C
(t)
CC
2%
I
C
t
V
CE
(t)
Figure E.
Dynamic test circuit
Parasitic inductance L
,
s
parasitic capacitor C
,
s
relief capacitor C ,
r
t
2
t
4
(only for ZVT switching)
E
=
V
CE
x
I
C
x d
t
E
=
V
CE
x
I
C
x d
t
off
on
2%
V
CE
t
1
t
3
t
t
1
t
2
t
3
t
4
Figure B.
15
Rev.ꢀ2.1,ꢀꢀ2014-12-10
IKW30N65EL5
Low V
CE(sat)
series fifth generation
Revision History
IKW30N65EL5
Revision: 2014-12-10, Rev. 2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2014-12-10 Final
data sheet
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Published by
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© 2014 Infineon Technologies AG
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16
Rev. 2.1,
2014-12-10
