Infineon-Technologies-IKW40N120CS6XKSA1
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IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
HighꢀspeedꢀsoftꢀswitchingꢀTRENCHSTOP
TM
ꢀꢀIGBTꢀ6ꢀinꢀTrenchꢀandꢀFieldstop
technologyꢀcopackedꢀwithꢀsoftꢀandꢀfastꢀrecoveryꢀanti-parallelꢀdiode
ꢀ
C
Features:
1200VꢀTRENCHSTOP
TM
ꢀIGBT6ꢀtechnologyꢀoffering:
•ꢀHighꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonantꢀtopologies
•ꢀEasyꢀparallelingꢀcapabilityꢀdueꢀtoꢀpositiveꢀtemperature
coefficientꢀinꢀV
CEsat
G
•ꢀLowꢀEMI
E
•ꢀLowꢀGateꢀChargeꢀQ
g
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀfullꢀcurrentꢀanti-parallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
Applications:
•ꢀIndustrialꢀUPS
•ꢀCharger
•ꢀEnergyꢀstorage
•ꢀThree-levelꢀSolarꢀStringꢀInverter
•ꢀWelding
G
C
E
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
V
CE
I
C
V
CEsat
,ꢀ
T
vj
=25°C
T
vjmax
1.85V 175°C
Marking
Package
PG-TO247-3
IKW40N120CS6
1200V
40A
K40MCS6
Datasheet
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
13
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
5
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
Vꢀ2.1
2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀ
T
vj
ꢀ
≥
ꢀ25°C
V
CE
1200
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
c
ꢀ=ꢀ25°C
T
c
ꢀ=ꢀ100°C
I
C
80.0
40.0
A
Pulsedꢀcollectorꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Cpuls
160.0
160.0
A
A
Turnꢀoffꢀsafeꢀoperatingꢀareaꢀ
V
CE
ꢀ
≤
ꢀ1200V,ꢀ
T
vj
ꢀ
≤
ꢀ175°C
–
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
c
ꢀ=ꢀ25°C
T
c
ꢀ=ꢀ100°C
I
F
80.0
40.0
A
Diodeꢀpulsedꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Fpuls
V
GE
160.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(
t
p
ꢀ
≤
ꢀ0.5µs,ꢀ
D
ꢀ<ꢀ0.001)
±20
25
Short circuit withstand time
V
GE
ꢀ=ꢀ15.0V,ꢀ
V
CC
ꢀ
≤
ꢀ500V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
ꢀ=ꢀ150°C
t
SC
µs
W
3
Powerꢀdissipationꢀ
T
c
ꢀ=ꢀ25°C
Powerꢀdissipationꢀ
T
c
ꢀ=ꢀ100°C
500.0
250.0
P
tot
Operating junction temperature
Storage temperature
T
vj
-40…+175
-55…+150
°C
°C
T
stg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
R
th
ꢀCharacteristics
IGBT thermal resistance,
junction – case
R
th(j-c)
R
th(j-c)
R
th(j-a)
–
–
–
–
–
–
0.30 K/W
0.78 K/W
40 K/W
Diode thermal resistance,
junction – case
Thermal resistance
junction – ambient
Datasheet
3
Vꢀ2.1
2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
V
GE
ꢀ=ꢀ15.0V,ꢀ
I
C
ꢀ=ꢀ40.0A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ125°C
T
vj
ꢀ=ꢀ175°C
–
–
–
1.85 2.15
Collector-emitter saturation voltage
V
CEsat
V
2.15
2.25
–
–
V
GE
ꢀ=ꢀ0V,ꢀ
I
F
ꢀ=ꢀ40.0A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Diode forward voltage
V
F
–
–
2.20 2.55
V
V
2.25
–
Gate-emitter threshold voltage
V
GE(th)
I
C
ꢀ=ꢀ1.90mA,ꢀ
V
CE
ꢀ=ꢀ
V
GE
5.1
5.7
6.3
V
CE
ꢀ=ꢀ1200V,ꢀ
V
GE
ꢀ=ꢀ0V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Zero gate voltage collector current
I
CES
–
–
–
850
–
µA
1600
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
ꢀ=ꢀ0V,ꢀ
V
GE
ꢀ=ꢀ20V
V
CE
ꢀ=ꢀ20V,ꢀ
I
C
ꢀ=ꢀ40.0A
–
–
–
600
–
nA
S
32.0
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
C
ies
–
–
–
2700
185
–
–
–
Output capacitance
C
oes
C
res
V
CE
ꢀ=ꢀ25V,ꢀ
V
GE
ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
120
V
CC
ꢀ=ꢀ960V,ꢀ
I
C
ꢀ=ꢀ40.0A,
V
GE
ꢀ=ꢀ15V
Gate charge
Q
G
L
E
–
–
285.0
13.0
–
–
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
27
39
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ600V,ꢀ
I
C
ꢀ=ꢀ40.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ9.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ9.0
Ω
,
L
σ
ꢀ=ꢀ70nH,ꢀ
C
σ
ꢀ=ꢀ67pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
315
27
ns
ns
Turn-on energy
E
on
E
off
E
ts
2.55
1.55
4.10
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
Vꢀ2.1
2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
400
2.65
18.0
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ25°C,
V
R
ꢀ=ꢀ600V,
I
F
ꢀ=ꢀ40.0A,
di
F
/dt
ꢀ=ꢀ700A/µs,
L
σ
ꢀ=ꢀ70nH,
C
σ
ꢀ=ꢀ67pF
Q
rr
Diode peak reverse recovery current
I
rrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-65
–
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
27
38
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ175°C,
V
CC
ꢀ=ꢀ600V,ꢀ
I
C
ꢀ=ꢀ40.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ9.0
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ9.0
Ω
,
L
σ
ꢀ=ꢀ70nH,ꢀ
C
σ
ꢀ=ꢀ67pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
390
55
ns
ns
Turn-on energy
E
on
E
off
E
ts
3.50
2.95
6.45
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
720
6.40
27.0
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ175°C,
V
R
ꢀ=ꢀ600V,
I
F
ꢀ=ꢀ40.0A,
di
F
/dt
ꢀ=ꢀ800A/µs,
L
σ
ꢀ=ꢀ70nH,
C
σ
ꢀ=ꢀ67pF
Q
rr
Diode peak reverse recovery current
I
rrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
-70
–
A/µs
Datasheet
5
Vꢀ2.1
2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
160
V
GE
=20V
17V
15V
13V
11V
9V
not for linear use
140
120
100
80
100
10
1
7V
60
40
20
0.1
0
1
10
100
1000
0
1
2
3
4
5
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 1.
Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(
D
=0,ꢀ
T
vj
≤
175°C;ꢀ
V
GE
=15V,ꢀpulseꢀwidth
Figure 2.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=25°C)
limitedꢀbyꢀ
T
vjmax
)
160
140
120
100
80
160
V
GE
=20V
T
vj
= 25°C
T
vj
= 175°C
17V
15V
13V
11V
9V
140
120
100
80
7V
60
60
40
40
20
20
0
0
0
1
2
3
4
5
4
6
8
10
12
14
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 3.
Typicalꢀoutputꢀcharacteristic
(
T
vj
=175°C)
Figure 4.
Typicalꢀtransferꢀcharacteristic
(
V
CE
=20V)
Datasheet
6
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2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1000
I
C
= 20A
I
C
= 40A
I
C
= 80A
t
d(off)
t
f
t
d(on)
t
r
100
10
1
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 5.
Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
Figure 6.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(
V
GE
=15V)
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=600V,
V
GE
=0/15V,ꢀ
R
G
=9
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
1000
100
10
t
d(off)
t
f
t
d(on)
t
r
1000
100
10
t
d(off)
t
f
t
d(on)
t
r
0
5
10
15
20
25
30
35
25
50
75
100
125
150
175
R
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
Figure 8.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=600V,
V
GE
=0/15V,ꢀ
I
C
=40A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀ
V
CE
=600V,ꢀ
V
GE
=0/15V,
I
C
=40A,ꢀ
R
G
=9
Ω
,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigure
E)
Datasheet
7
Vꢀ2.1
2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
16
typ.
min.
max.
E
off
E
on
E
ts
14
12
10
8
6
4
2
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 9.
Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Figure 10.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
(
I
C
=1.9mA)
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=600V,
V
GE
=0/15V,ꢀ
R
G
=9
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
12
7
E
off
E
on
E
ts
E
off
E
on
E
ts
6
10
8
5
4
3
2
1
0
6
4
2
0
5
10
15
20
25
30
35
25
50
75
100
125
150
175
R
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 11.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 12.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
CE
=600V,
V
GE
=0/15V,ꢀ
I
C
=40A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀ
V
CE
=600V,ꢀ
V
GE
=0/15V,
I
C
=40A,ꢀ
R
G
=9
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
8
Vꢀ2.1
2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
9
8
7
6
5
4
3
2
1
1200
E
off
E
on
E
ts
Tv
j
= 25°C
Tv
j
= 175°C
1000
800
600
400
200
0
400 450 500 550 600 650 700 750 800
0
5
10
15
20
25
30
35
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
R
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
Figure 13.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀ
T
vj
=175°C,ꢀ
V
GE
=0/15V,
I
C
=40A,ꢀ
R
G
=9
Ω
,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14.
Typicalꢀdiodeꢀcurrentꢀslopeꢀasꢀaꢀfunctionꢀof
gateꢀresistor
(inductiveꢀload,ꢀ
V
CE
=600V,ꢀ
V
GE
=0/15V,
I
C
=40A,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
16
1E+4
V
CC
ꢀ=ꢀ240V
V
CC
ꢀ=ꢀ960V
C
ies
C
oes
C
res
14
12
10
8
1000
100
10
6
4
2
0
0
50
100
150
200
250
300
0
5
10
15
20
25
30
Q
GE
,ꢀGATEꢀCHARGEꢀ[nC]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15.
Typicalꢀgateꢀcharge
(
I
C
=40A)
Figure 16.
Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(
V
GE
=0V,ꢀf=1MHz)
Datasheet
9
Vꢀ2.1
2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
300
275
250
225
200
175
150
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
12.0
12.5
13.0
13.5
14.0
14.5
15.0
12.0
12.5
13.0
13.5
14.0
14.5
15.0
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 17.
Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 18.
Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(
V
CE
≤
500V,ꢀ
T
vj
≤
175°C)
(
V
CE
≤
500V,ꢀstartꢀatꢀ
T
vj
≤
175°C)
1
0.1
D = 0.5
0.2
D = 0.5
0.1
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
0.01
0.01
single pulse
single pulse
0.001
0.001
i:
1
2
3
4
5
6
i:
1
2
3
4
5
r
i
[K/W]: 9.4E-4 0.056801 0.070049 0.170338 8.0E-3
1.6E-3
r
i
[K/W]: 0.17605 0.29816 0.29355 0.0141
2.2E-3
τ
i
[s]:
2.5E-5 3.4E-4
3.1E-3
0.016587 0.224027 2.909819
τ
i
[s]:
3.1E-4
2.8E-3
0.01518 0.20937 2.46001
1E-4
1E-6
1E-4
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
1E-5
1E-4
0.001
0.01
0.1
1
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19.
IGBTꢀtransientꢀthermalꢀresistance
(
D
=
t
p
/T)
Figure 20.
Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(
D
=
t
p
/T)
Datasheet
10
Vꢀ2.1
2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
1000
T
vj
= 25°C, I
F
= 40A
T
vj
= 175°C, I
F
= 40A
T
vj
= 25°C, I
F
= 40A
T
vj
= 175°C, I
F
= 40A
900
800
700
600
500
400
300
7
6
5
4
3
2
200
400
600
800
1000
1200
200
400
600
800
1000
1200
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21.
Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
Figure 22.
Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=600V)
(
V
R
=600V)
30
25
20
15
10
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
T
vj
= 25°C, I
F
= 40A
T
vj
= 175°C, I
F
= 40A
T
vj
= 25°C, I
F
= 40A
T
vj
= 175°C, I
F
= 40A
200
400
600
800
1000
1200
200
400
600
800
1000
1200
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23.
Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=600V)
Figure 24.
Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(
V
R
=600V)
Datasheet
11
Vꢀ2.1
2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
160
T
j
=25°C, IF = 40A
T
j
=175°C, IF = 40A
T
vj
= 25°C
T
vj
= 175°C
140
120
100
80
60
40
20
0
200
400
600
800
1000
1200
0
1
2
3
4
5
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
V
F
,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 25.
Typicalꢀreverseꢀenergyꢀlossesꢀasꢀaꢀfunction
Figure 26.
Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
ofꢀforwardꢀvoltage
(
V
R
=600V)
3.5
3.0
2.5
2.0
1.5
1.0
I
F
= 20A
I
F
= 40A
I
F
= 80A
25
50
75
100
125
150
175
T
vj
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27.
Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.1
2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
Package Drawing PG-TO247-3
Datasheet
13
Vꢀ2.1
2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
Testing Conditions
V
GE
(t)
I,V
90%
V
GE
t
rr
=
t
a
+
t
b
dI
F
/dt
Q
rr
=
Q
a
+
Q
b
a
b
10%
V
GE
t
Q
a
Q
b
I
C
(t)
dI
90%
I
C
90%
I
C
10%
I
C
10%
I
C
Figure C.
Definition of diode switching
characteristics
t
V
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
Figure A.
V
GE
(t)
90%
V
GE
Figure D.
10%
V
GE
t
I
C
(t)
CC
2%
I
C
t
V
CE
(t)
Figure E.
Dynamic test circuit
Parasitic inductance L
,
parasitic capacitor C
,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t
2
t
4
E
=
V
CE
x
I
C
x d
t
E
=
V
CE
x
I
C
x d
t
off
on
2%
V
CE
t
1
t
3
t
t
1
t
2
t
3
t
4
Figure B.
Datasheet
14
Vꢀ2.1
2018-05-07
IKW40N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
RevisionꢀHistory
IKW40N120CS6
Revision:ꢀ2018-05-07,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2018-05-07 Final
data sheet
Datasheet
15
Vꢀ2.1
2018-05-07
Trademarks
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ꢀ
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Publishedꢀby
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