Infineon-Technologies-IKW40N60DTP
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IGBT
TRENCHSTOP
TM
ꢀP
erformance
ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀanti-parallelꢀdiode
IKW40N60DTP
600VꢀDuoPackꢀIGBTꢀandꢀdiode
TRENCHSTOP
TM
ꢀP
erformance
ꢀseries
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
600VꢀDuoPackꢀIGBTꢀandꢀdiode
TRENCHSTOP
TM
ꢀP
erformance
ꢀseries
ꢀ
C
Features:
TRENCHSTOP
TM
ꢀtechnologyꢀoffering
•ꢀveryꢀlowꢀV
CEsat
•ꢀlowꢀturn-offꢀlosses
•ꢀshortꢀtailꢀcurrent
•ꢀlowꢀEMI
G
E
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀdiode
•ꢀmaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀcompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
Applications:
•ꢀdrives
•ꢀsolarꢀinverters
•ꢀuninterruptibleꢀpowerꢀsupplies
•ꢀconvertersꢀwithꢀmediumꢀswitchingꢀfrequency
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
V
CE
I
C
V
CEsat
,ꢀ
T
vj
=25°C
T
vjmax
1.6V 175°C
Marking
Package
IKW40N60DTP
600V
40A
K40DDTP
PG-TO247-3
2
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
14
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
6
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀ
T
vj
ꢀ
≥
ꢀ25°C
V
CE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°C
T
C
ꢀ=ꢀ100°C
I
C
67.0
48.0
A
1)
Pulsedꢀcollectorꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Cpuls
120.0
120.0
A
A
Turn off safe operating area
–
V
CE
ꢀ
≤
ꢀ600V,ꢀ
T
vj
ꢀ
≤
ꢀ175°C,ꢀ
t
p
ꢀ=ꢀ1µs
1)
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀ
T
vjmax
T
C
ꢀ=ꢀ25°C
T
C
ꢀ=ꢀ100°C
I
F
58.0
35.0
A
1)
Diodeꢀpulsedꢀcurrent,ꢀ
t
p
ꢀlimitedꢀbyꢀ
T
vjmax
I
Fpuls
V
GE
120.0
±20
A
V
Gate-emitter voltage
Short circuit withstand time
V
GE
ꢀ=ꢀ15.0V,ꢀ
V
CC
ꢀ
≤
ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
ꢀ=ꢀ150°C
t
SC
µs
5
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ25°C
Powerꢀdissipationꢀ
T
C
ꢀ=ꢀ100°C
246.0
123.0
P
tot
W
Operating junction temperature
Storage temperature
T
vj
-40…+175
-55…+150
°C
°C
T
stg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
R
th
ꢀCharacteristics
IGBT thermal resistance,
junction – case
R
th(j-c)
R
th(j-c)
–
–
0.41 0.61
K/W
0.83 1.29
K/W
Diode thermal resistance,
junction – case
1)
Defined by design. Not subject to production test.
4
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
ꢀ=ꢀ0V,ꢀ
I
C
ꢀ=ꢀ2.00mA
V
GE
ꢀ=ꢀ15.0V,ꢀ
I
C
ꢀ=ꢀ40.0A
600
–
–
V
V
Collector-emitter saturation voltage
V
CEsat
T
vj
ꢀ=ꢀ25°C
–
–
1.60 1.80
1.94
T
vj
ꢀ=ꢀ175°C
–
V
GE
ꢀ=ꢀ0V,ꢀ
I
F
ꢀ=ꢀ20.0A
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Diode forward voltage
V
F
–
–
1.45 1.70
V
V
1.39
–
Gate-emitter threshold voltage
V
GE(th)
I
C
ꢀ=ꢀ0.64mA,ꢀ
V
CE
ꢀ=ꢀ
V
GE
4.1
5.1
5.7
V
CE
ꢀ=ꢀ600V,ꢀ
V
GE
ꢀ=ꢀ0V
T
vj
ꢀ=ꢀ25°C
T
vj
ꢀ=ꢀ175°C
Zero gate voltage collector current
I
CES
–
–
–
–
40
–
µA
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
CE
ꢀ=ꢀ0V,ꢀ
V
GE
ꢀ=ꢀ20V
V
CE
ꢀ=ꢀ20V,ꢀ
I
C
ꢀ=ꢀ40.0A
–
–
–
100
–
nA
S
40.0
ElectricalꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
C
ies
–
–
–
1400
76
–
–
–
Output capacitance
C
oes
C
res
V
CE
ꢀ=ꢀ25V,ꢀ
V
GE
ꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
48
V
CC
ꢀ=ꢀ480V,ꢀ
I
C
ꢀ=ꢀ40.0A,
V
GE
ꢀ=ꢀ15V
Gate charge
Q
G
L
E
–
–
177.0
13.0
–
–
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits:
≥
1.0s
V
GE
ꢀ=ꢀ15.0V,ꢀ
V
CC
ꢀ
≤
ꢀ400V,
t
SC
ꢀ
≤
ꢀ5µs
T
vj
ꢀ=ꢀ150°C
I
C(SC)
–
–
A
183
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ25°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
18
30
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ25°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ40.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ10.1
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ10.1
Ω
,
L
σ
ꢀ=ꢀ32nH,ꢀ
C
σ
ꢀ=ꢀ60pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
222
18
ns
ns
Turn-on energy
E
on
E
off
E
ts
1.06
0.61
1.67
mJ
mJ
mJ
Turn-off energy
Total switching energy
5
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
87
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ25°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ20.0A,
di
F
/dt
ꢀ=ꢀ1175A/µs
Q
rr
0.56
11.5
Diode peak reverse recovery current
I
rrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
144
–
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀ
T
vj
ꢀ=ꢀ175°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
19
30
–
–
–
–
–
–
–
ns
ns
T
vj
ꢀ=ꢀ175°C,
V
CC
ꢀ=ꢀ400V,ꢀ
I
C
ꢀ=ꢀ40.0A,
V
GE
ꢀ=ꢀ0.0/15.0V,
R
G(on)
ꢀ=ꢀ10.1
Ω
,ꢀ
R
G(off)
ꢀ=ꢀ10.1
Ω
,
L
σ
ꢀ=ꢀ32nH,ꢀ
C
σ
ꢀ=ꢀ60pF
L
σ
,ꢀ
C
σ
ꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
273
47
ns
ns
Turn-on energy
E
on
E
off
E
ts
1.63
1.05
2.68
mJ
mJ
mJ
Turn-off energy
Total switching energy
Diode reverse recovery time
Diode reverse recovery charge
t
rr
–
–
–
144
1.52
18.3
–
–
–
ns
µC
A
T
vj
ꢀ=ꢀ175°C,
V
R
ꢀ=ꢀ400V,
I
F
ꢀ=ꢀ20.0A,
Q
rr
Diode peak reverse recovery current
I
rrm
di
F
/dt
ꢀ=ꢀ1175A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀ
t
b
di
rr
/dt
–
142
–
A/µs
6
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
300
250
200
150
100
50
100
10
1
t
p
=1µs
0.1
0
0.1
1
10
100
1000
25
50
75
100
125
150
175
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1.
Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(
D
=0,ꢀ
T
C
=25°C,ꢀ
T
j
≤
175°C;ꢀ
V
GE
=15V)
Figure 2.
Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
temperature
(
T
j
≤
175°C)
80
60
40
20
0
110
100
V
GE
=20V
90
15V
13V
80
11V
70
9V
60
7V
50
40
30
20
10
0
25
50
75
100
125
150
175
0
1
2
3
4
T
C
,ꢀCASEꢀTEMPERATUREꢀ[°C]
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3.
Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4.
Typicalꢀoutputꢀcharacteristic
(
T
j
=25°C)
(
V
GE
≥
15V,ꢀ
T
j
≤
175°C)
7
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
110
100
90
80
70
60
50
40
30
20
10
0
100
75
50
25
0
T
j
=25°C
T
j
=175°C
V
GE
=20V
15V
13V
11V
9V
7V
0
1
2
3
4
5
0
2
4
6
8
10
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5.
Typicalꢀoutputꢀcharacteristic
(
T
j
=175°C)
Figure 6.
Typicalꢀtransferꢀcharacteristic
(
V
CE
=20V)
3.5
I
C
=20A
I
C
=40A
I
C
=80A
t
d(off)
t
f
t
d(on)
t
r
3.0
2.5
2.0
1.5
1.0
100
10
1
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
90
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7.
Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
Figure 8.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(
V
GE
=15V)
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
r
G
=10,1
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
8
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
1000
100
10
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
100
10
0
5
10
15
20
25
30
35
40
45
25
50
75
100
125
150
175
r
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
Figure 10.
Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
I
C
=40A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,ꢀ
I
C
=40A,
r
G
=10,1
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
6.0
5.0
4.0
3.0
2.0
1.0
0.0
8
7
6
5
4
3
2
1
0
typ.
min.
max.
E
off
E
on
E
ts
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
I
C
,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11.
Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
Figure 12.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
functionꢀofꢀcollectorꢀcurrent
(
I
C
=0,64mA)
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
r
G
=10,1
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
9
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
6
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
E
off
E
on
E
ts
E
off
E
on
E
ts
0
5
10
15
20
25
30
35
40
45
25
50
75
100
125
150
175
r
G
,ꢀGATEꢀRESISTORꢀ[
Ω
]
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
Figure 14.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
functionꢀofꢀgateꢀresistor
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,
I
C
=40A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(indꢀload,ꢀ
V
CE
=400V,ꢀ
V
GE
=15/0V,ꢀ
I
C
=40A,
r
G
=10,1
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
6.0
5.0
4.0
3.0
2.0
1.0
0.0
16
E
off
E
on
E
ts
120V
480V
14
12
10
8
6
4
2
0
300
350
400
450
500
550
600
0
50
100
150
200
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Q
GE
,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15.
Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(ind.ꢀload,ꢀ
T
j
=175°C,ꢀ
V
GE
=15/0V,ꢀ
I
C
=40A,
r
G
=10,1
Ω
,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
Figure 16.
Typicalꢀgateꢀcharge
(
I
C
=40A)
10
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
350
300
250
200
150
100
50
1000
100
10
C
ies
C
oes
C
res
0
0
10
20
30
12
13
14
15
16
17
18
19
20
V
CE
,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 17.
Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18.
Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
(
V
GE
=0V,ꢀf=1MHz)
(
V
CE
≤
400V,ꢀstartꢀat
T
j
=25°C)
16
14
12
10
8
0.1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.01
single pulse
6
0.001
4
2
i:
r
i
[K/W]: 0.01470005 0.07635961 0.09972334 0.1994667
0.0170487 1.3E-3
τ
i
[s]: 3.4E-5
1.9E-4 2.1E-3 0.01129602
0.08484332 1.853814
1
2
3
4
5
6
0
1E-4
1E-6
10
11
12
13
14
15
1E-5
1E-4
0.001
0.01
0.1
1
V
GE
,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19.
Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
Figure 20.
TypicalꢀIGBTꢀtransientꢀthermalꢀimpedance
gate-emitterꢀvoltage
(
D
=
t
p
/T)
(
V
CE
≤
400V,ꢀstartꢀatꢀ
T
j
≤
150°C)
11
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
250
200
150
100
50
T
j
=25°C, I
F
= 20A
T
j
=175°C, I
F
= 20A
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1E-4
single pulse
i:
r
i
[K/W]: 0.03891365 0.1843676 0.2443055 0.3230286 0.04259767 1.4E-3
τ
i
[s]: 2.9E-5
1.5E-4 1.3E-3 7.7E-3 0.05008655
1.821936
1
2
3
4
5
6
1E-7 1E-6 1E-5 1E-4
0.001 0.01
0.1
1
600 700 800 900
1000 1100 1200 1300 1400
t
p
,ꢀPULSEꢀWIDTHꢀ[s]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21.
Typicalꢀdiodeꢀtransientꢀthermalꢀimpedance
asꢀaꢀfunctionꢀofꢀpulseꢀwidth
(
D
=
t
p
/T)
Figure 22.
Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
2.0
30
T
j
=25°C, I
F
= 20A
T
j
=175°C, I
F
= 20A
T
j
=25°C, I
F
= 20A
T
j
=175°C, I
F
= 20A
25
20
15
10
5
1.5
1.0
0.5
0.0
0
600 700 800 900
1000 1100 1200 1300 1400
600 700 800 900
1000 1100 1200 1300 1400
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23.
Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
Figure 24.
Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(
V
R
=400V)
12
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
0
60
50
40
30
20
10
0
T
j
=25°C, I
F
= 20A
T
j
=175°C, I
F
= 20A
T
j
=25°C
T
j
=175°C
-50
-100
-150
-200
600 700 800 900
1000 1100 1200 1300 1400
0.0
0.5
1.0
1.5
2.0
2.5
di
F
/dt
,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
V
F
,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 25.
Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 26.
Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(
V
R
=400V)
2.0
I
F
=10A
I
F
=20A
I
F
=40A
1.8
1.6
1.4
1.2
1.0
0.8
25
50
75
100
125
150
175
T
j
,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27.
Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
13
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
Package Drawing PG-TO247-3
14
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
Testing Conditions
V
GE
(t)
I,V
90%
V
GE
t
rr
=
t
a
+
t
b
dI
F
/dt
Q
rr
=
Q
a
+
Q
b
a
b
10%
V
GE
t
Q
a
Q
b
I
C
(t)
dI
90%
I
C
90%
I
C
10%
I
C
10%
I
C
Figure C.
Definition of diode switching
characteristics
t
V
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
Figure A.
V
GE
(t)
90%
V
GE
Figure D.
10%
V
GE
t
I
C
(t)
CC
2%
I
C
t
V
CE
(t)
Figure E.
Dynamic test circuit
Parasitic inductance L
,
parasitic capacitor C
,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t
2
t
4
E
=
V
CE
x
I
C
x d
t
E
=
V
CE
x
I
C
x d
t
off
on
2%
V
CE
t
1
t
3
t
t
1
t
2
t
3
t
4
Figure B.
15
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW40N60DTP
TRENCHSTOP
TM
ꢀP
erformance
ꢀSeries
RevisionꢀHistory
IKW40N60DTP
Revision:ꢀ2016-02-08,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
2.1
Subjects (major changes since last revision)
Release final datasheet
–
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2016.
AllꢀRightsꢀReserved.
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(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany
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16
Rev.ꢀ2.1,ꢀꢀ2016-02-08
