Infineon-Technologies-IKW60N60H3
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IGBT
High speed DuoPack: IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel diode
IKW60N60H3
600V high speed switching series third generation
Data sheet
Industrial Power Control
IKW60N60H3
High speed switching series third generation
High speed IGBT in Trench and Fieldstop technology
C
Features:
TRENCHSTOP
TM
technology offering
• very low turn-off energy
• low V
CEsat
• low EMI
G
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating, halogen-free mould compound, RoHS
compliant
• complete product spectrum and PSpice Models:
Applications:
• uninterruptible power supplies
• welding converters
• converters with high switching frequency
1
2
3
Package pin definition:
• Pin 1 – gate
• Pin 2 & backside – collector
• Pin 3 – emitter
Key Performance and Package Parameters
Type
V
†Š
I
†
V
†ŠÙÈÚ,
T
ÝÎ=25°C
T
ÝÎÑÈà
1.85V 175°C
Marking
Package
IKW60N60H3
600V
60A
K60H603
PG-TO247-3
Rev. 1.2,
2012-05-29
2
IKW60N60H3
High speed switching series third generation
Table of Contents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
. 4
Testing Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
5
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
. 6
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
6
Rev. 1.2,
2012-05-29
3
IKW60N60H3
High speed switching series third generation
Maximum ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
†Š
600
V
DC collector current, limited by
T
ÝÎÑÈà
1)
T
† = 25°C
T
† = 115°C
I
†
80.0
60.0
A
Pulsed collector current,
t
Ô limited by
T
ÝÎÑÈà
I
†ÔÛÐÙ
–
180.0
180.0
A
A
Turn off safe operating area
V
†Š ù 600V,
T
ÝÎ ù 175°C
Diode forward current, limited by
T
ÝÎÑÈà
T
† = 25°C
T
† = 115°C
I
Œ
80.0
30.0
A
Diode pulsed current,
t
Ô limited by
T
ÝÎÑÈà
Gate-emitter voltage
I
ŒÔÛÐÙ
V
•Š
90.0
±20
A
V
Short circuit withstand time
V
•Š = 15.0V,
V
†† ù 400V
Allowed number of short circuits < 1000
Time between short circuits: ú 1.0s
T
ÝÎ = 150°C
t
Ƞ
µs
5
Power dissipation
T
† = 25°C
Operating junction temperature
Storage temperature
P
ÚÓÚ
T
ÝÎ
416.0
W
°C
°C
-40…+175
-55…+150
T
ÙÚÃ
Soldering temperature,
wave soldering
1.6 mm (0.063 in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
Thermal Resistance
Parameter
Symbol Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
R
ÚÌñÎ-Êò
R
ÚÌñÎ-Êò
R
ÚÌñÎ-Èò
0.36
1.05
40
K/W
K/W
K/W
Diode thermal resistance,
junction – case
Thermal resistance
junction – ambient
1)
80A value limited by bondwire
Rev. 1.2,
2012-05-29
4
IKW60N60H3
High speed switching series third generation
Electrical Characteristic, at
T
ÝÎ = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
Static Characteristic
Collector-emitter breakdown voltage
V
ñ…çò†Š»
V
•Š = 0V,
I
† = 2.00mA
600
–
–
V
V
V
•Š = 15.0V,
I
† = 60.0A
T
ÝÎ = 25°C
T
ÝÎ = 175°C
Collector-emitter saturation voltage
V
†ŠÙÈÚ
–
–
1.85 2.30
2.25
–
V
•Š = 0V,
I
Π= 30.0A
T
ÝÎ = 25°C
T
ÝÎ = 175°C
Diode forward voltage
V
Œ
–
–
1.65 2.00
1.60
V
V
Gate-emitter threshold voltage
V
•ŠñÚÌò
I
† = 1.00mA,
V
†Š =
V
•Š
4.1
5.1
5.7
V
†Š = 600V,
V
•Š = 0V
T
ÝÎ = 25°C
T
ÝÎ = 175°C
Zero gate voltage collector current
I
†Š»
–
–
–
–
40.0 µA
5000.0
Gate-emitter leakage current
Transconductance
I
•Š»
g
ËÙ
V
†Š = 0V,
V
•Š = 20V
V
†Š = 20V,
I
† = 60.0A
–
–
–
100
–
nA
S
32.0
Electrical Characteristic, at
T
ÝÎ = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
Dynamic Characteristic
Input capacitance
C
ÍþÙ
–
–
–
3680
160
–
–
–
Output capacitance
C
ÓþÙ
C
ØþÙ
V
†Š = 25V,
V
•Š = 0V, f = 1MHz
pF
Reverse transfer capacitance
100
V
†† = 480V,
I
† = 60.0A,
V
•Š = 15V
Gate charge
Q
•
L
Š
–
–
375.0
13.0
–
–
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ú 1.0s
V
•Š = 15.0V,
V
†† ù 400V,
t
»† ù 5µs
T
ÝÎ = 150°C
I
†ñ»†ò
–
–
A
534
Switching Characteristic, Inductive Load, at
T
ÝÎ = 25°C
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
t
ÁñÓÒò
t
Ø
T
ÝÎ = 25°C,
V
†† = 400V,
I
† = 60.0A,
V
•Š = 0.0/15.0V,
r
• = 6.0Â,
L
ÿ = 90nH,
C
ÿ = 50pF
L
ÿ,
C
ÿ from Fig. E
Energy losses include “tail” and
diode (IKW60N60H3) reverse
recovery. Switching test with
minimized Emitter Stray
inductance, see High Speed 3 App
–
–
–
–
–
–
–
27
44
–
–
–
–
–
–
–
ns
ns
Turn-off delay time
Fall time
t
ÁñÓËËò
t
Ë
252
27
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
E
ÓÒ
E
ÓËË
E
ÚÙ
2.10
1.13
3.23
mJ
mJ
mJ
Rev. 1.2,
2012-05-29
5
IKW60N60H3
High speed switching series third generation
Diode Characteristic, at
T
ÝÎ = 25°C
Diode reverse recovery time
t
ØØ
T
ÝÎ = 25°C,
V
ç = 400V,
I
Π= 60.0A,
di
Œ
/dt
= 1000A/µs
–
–
–
143
1.20
13.0
–
–
–
ns
µC
A
Diode reverse recovery charge
Q
ØØ
Diode peak reverse recovery current
I
ØØÑ
Diode peak rate of fall of reverse
recovery current during
t
É
di
ØØ
/dt
–
-108
–
A/µs
Switching Characteristic, Inductive Load, at
T
ÝÎ = 175°C
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
t
ÁñÓÒò
t
Ø
T
ÝÎ = 175°C,
V
†† = 400V,
I
† = 60.0A,
V
•Š = 0.0/15.0V,
r
• = 6.0Â,
L
ÿ = 90nH,
C
ÿ = 50pF
L
ÿ,
C
ÿ from Fig. E
Energy losses include “tail” and
diode (IKW60N60H3) reverse
recovery. Switching test with
minimized Emitter Stray
inductance, see High Speed 3 App
–
–
–
–
–
–
–
25
39
–
–
–
–
–
–
–
ns
ns
Turn-off delay time
Fall time
t
ÁñÓËËò
t
Ë
291
23
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
E
ÓÒ
E
ÓËË
E
ÚÙ
2.63
1.46
4.09
mJ
mJ
mJ
Diode Characteristic, at
T
ÝÎ = 175°C
Diode reverse recovery time
t
ØØ
T
ÝÎ = 175°C,
V
ç = 400V,
I
Π= 60.0A,
–
–
–
255
2.80
23.0
–
–
–
ns
µC
A
Diode reverse recovery charge
Q
ØØ
di
Œ
/dt
= 1000A/µs
Diode peak reverse recovery current
I
ØØÑ
Diode peak rate of fall of reverse
recovery current during
t
É
di
ØØ
/dt
–
-108
–
A/µs
Rev. 1.2,
2012-05-29
6
IKW60N60H3
High speed switching series third generation
90
80
70
60
50
40
30
20
10
0
100
10
1
tÔ=1µs
10µs
50µs
100µs
200µs
500µs
DC
T†=80°
I
I
T†=110°
0.1
1
10
f
, SWITCHING FREQUENCY [kHz]
100
1000
1
10
V
†Š, COLLECTOR-EMITTER VOLTAGE [V]
100
1000
Figure 1. Collector current as a function of switching
frequency
Figure 2. Forward bias safe operating area
(
D
=0,
T
†=25°C,
T
Îù175°C;
V
•Š=15V)
(
T
Îù175°C,
D
=0.5,
V
†Š=400V,
V
•Š=15/0V,
r
•=6Â)
450
400
350
300
250
200
150
100
50
90
80
70
60
50
40
30
20
10
0
I
P
0
25
50
75
T
†, CASE TEMPERATURE [°C]
100
125
150
175
25
50
75
T
†, CASE TEMPERATURE [°C]
100
125
150
175
Figure 3. Power dissipation as a function of case
temperature
(
T
Îù175°C)
Figure 4. Collector current as a function of case
temperature
(
V
•Šú15V,
T
Îù175°C)
Rev. 1.2,
2012-05-29
7
IKW60N60H3
High speed switching series third generation
200
175
150
125
100
75
200
175
150
125
100
75
V•Š=20V
17V
15V
13V
11V
9V
V•Š=20V
17V
15V
13V
11V
9V
7V
7V
5V
5V
I
I
50
50
25
25
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
†Š, COLLECTOR-EMITTER VOLTAGE [V]
3.5
4.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
†Š, COLLECTOR-EMITTER VOLTAGE [V]
Figure 5. Typical output characteristic
(
T
Î=25°C)
Figure 6. Typical output characteristic
(
T
Î=175°C)
225
3.5
TÎ=25°C
TÎ=175°C
I†=30A
I†=60A
I†=120A
200
3.0
2.5
2.0
1.5
1.0
175
150
125
100
75
I
50
25
V
0
5
6
7
V
•Š, GATE-EMITTER VOLTAGE [V]
8
9
10
11
12
0
25
50
T
Î, JUNCTION TEMPERATURE [°C]
75
100
125
150
175
Figure 7. Typical transfer characteristic
(
V
†Š=20V)
Figure 8. Typical collector-emitter saturation voltage
as a function of junction temperature
(
V
•Š=15V)
Rev. 1.2,
2012-05-29
8
IKW60N60H3
High speed switching series third generation
1000
100
10
1000
100
10
tÁñÓËËò
tË
tÁñÓÒò
tØ
tÁñÓËËò
tË
tÁñÓÒò
tØ
t
t
15
30
45
I
†, COLLECTOR CURRENT [A]
60
75
90
105
120
2
4
6
8 10
12 14 16 18 20 22 24
r
•, GATE RESISTOR [Â]
Figure 9. Typical switching times as a function of
collector current
Figure 10. Typical switching times as a function of
gate resistor
(ind. load,
T
Î=175°C,
V
†Š=400V,
V
•Š=15/0V,
r
•=6Â, test circuit in Fig. E)
(ind. load,
T
Î=175°C,
V
†Š=400V,
V
•Š=15/0V,
I
†=60A, test circuit in Fig. E)
6.0
typ.
min.
max.
5.5
tÁñÓËËò
tË
tÁñÓÒò
tØ
5.0
4.5
4.0
3.5
3.0
2.5
2.0
100
t
V
10
25
50 75
T
Î, JUNCTION TEMPERATURE [°C]
100
125
150
175
0
25
50
75
T
Î, JUNCTION TEMPERATURE [°C]
100
125
150
175
Figure 11. Typical switching times as a function of
junction temperature
Figure 12. Gate-emitter threshold voltage as a
function of junction temperature
(
I
†=1mA)
(ind. load,
V
†Š=400V,
V
•Š=15/0V,
I
†=60A,
r
•=6Â, test circuit in Fig. E)
Rev. 1.2,
2012-05-29
9
IKW60N60H3
High speed switching series third generation
12
10
8
9
8
7
6
5
4
3
2
1
0
EÓËË
EÓÒ
EÚÙ
EÓËË
EÓÒ
EÚÙ
6
4
E
E
2
0
10 20 30 40 50 60 70 80 90
100 110 120
I
†, COLLECTOR CURRENT [A]
2
4
6
8 10
12 14 16 18 20 22 24
r
•, GATE RESISTOR [Â]
Figure 13. Typical switching energy losses as a
function of collector current
(ind. load,
T
Î=175°C,
V
†Š=400V,
Figure 14. Typical switching energy losses as a
function of gate resistor
(ind. load,
T
Î=175°C,
V
†Š=400V,
V
•Š=15/0V,
r
•=6Â, test circuit in Fig. E)
V
•Š=15/0V,
I
†=60A, test circuit in Fig. E)
4.5
5.0
EÓËË
EÓÒ
EÚÙ
EÓËË
EÓÒ
EÚÙ
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
E
E
25
50
75
T
Î, JUNCTION TEMPERATURE [°C]
100
125
150
175
200
250
300
V
†Š, COLLECTOR-EMITTER VOLTAGE [V]
350
400
450
Figure 15. Typical switching energy losses as a
function of junction temperature
Figure 16. Typical switching energy losses as a
function of collector emitter voltage
(ind. load,
T
Î=175°C,
V
•Š=15/0V,
I
†=60A,
r
•=6Â, test circuit in Fig. E)
(ind load,
V
†Š=400V,
V
•Š=15/0V,
I
†=60A,
r
•=6Â, test circuit in Fig. E)
Rev. 1.2,
2012-05-29
10
IKW60N60H3
High speed switching series third generation
16
14
12
10
8
120V
480V
CÍÙÙ
CÓÙÙ
CØÙÙ
1000
100
10
6
C
4
V
2
0
0
50
100 150 200 250 300 350 400
Q
•Š, GATE CHARGE [nC]
0
5
10
15
V
†Š, COLLECTOR-EMITTER VOLTAGE [V]
20
25
30
Figure 17. Typical gate charge
(
I
†=60A)
Figure 18. Typical capacitance as a function of
collector-emitter voltage
(
V
•Š=0V, f=1MHz)
1000
900
800
700
600
500
400
300
200
100
15
12
9
6
3
t
I
0
0
10 11 12 13 14 15 16 17 18 19 20
V
•Š, GATE-EMITTER VOLTAGE [V]
10
11
12
13
V
•Š, GATE-EMITTER VOLTAGE [V]
14
15
Figure 19. Typical short circuit collector current as a
function of gate-emitter voltage
(
V
†Šù400V, start at
T
Î=25°C)
Figure 20. Short circuit withstand time as a function
of gate-emitter voltage
(
V
†Šù400V, start at
T
Îù150°C)
Rev. 1.2,
2012-05-29
11
IKW60N60H3
High speed switching series third generation
1
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.1
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
Z
Z
i:
rÍ[K/W]: 3.4E-3 0.07208849 0.08184821 0.1959702
9.3E-3
Í[s]: 3.0E-5
2.7E-4 3.0E-3 0.01558542
0.2275315 2.442003
1
2
3
4
5
6
i:
1
2
3
4
5
1.3E-3
rÍ[K/W]: 0.04915956 0.2254532 0.3125229 0.2677344
0.1951733
Í[s]: 7.5E-6
2.2E-4 2.3E-3 0.01546046
0.1078904
τ
τ
0.001
0.001
1E-6
1E-5
1E-4
t
Ô, PULSE WIDTH [s]
0.001
0.01
0.1
1
1E-7 1E-6 1E-5 1E-4
0.001 0.01
t
Ô, PULSE WIDTH [s]
0.1
1
Figure 21. IGBT transient thermal impedance
(
D
=
t
Ô/T)
Figure 22. Diode transient thermal impedance as a
function of pulse width
(
D
=
t
Ô/T)
600
3.5
TÎ=25°C, IŒ = 30A
TÎ=175°C, IŒ = 30A
TÎ=25°C, IŒ = 30A
TÎ=175°C, IŒ = 30A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
500
400
300
200
100
0
t
Q
100
300
500
di
Œ
/dt
, DIODE CURRENT SLOPE [A/µs]
700
900
1100 1300
100
300
500
di
Œ
/dt
, DIODE CURRENT SLOPE [A/µs]
700
900
1100 1300
Figure 23. Typical reverse recovery time as a
function of diode current slope
(
V
ç=400V)
Figure 24. Typical reverse recovery charge as a
function of diode current slope
(
V
ç=400V)
Rev. 1.2,
2012-05-29
12
IKW60N60H3
High speed switching series third generation
30
25
20
15
10
5
0
-20
TÎ=25°C, IŒ = 30A
TÎ=175°C, IŒ = 30A
TÎ=25°C, IŒ = 30A
TÎ=175°C, IŒ = 30A
-40
I
-60
-80
-100
-120
-140
-160
t
d
/
I
d
I
0
100
300
500
di
Œ
/dt
, DIODE CURRENT SLOPE [A/µs]
700
900
1100 1300
100
300
500
di
Œ
/dt
, DIODE CURRENT SLOPE [A/µs]
700
900
1100 1300
Figure 25. Typical reverse recovery current as a
function of diode current slope
(
V
ç=400V)
Figure 26. Typical diode peak rate of fall of reverse
recovery current as a function of diode
current slope
(
V
ç=400V)
100
2.25
TÎ=25°C
TÎ=175°C
IŒ=30A
IŒ=60A
IŒ=120A
80
60
40
20
0
2.00
1.75
1.50
1.25
1.00
I
V
0.0
0.5
1.0
V
Œ, FORWARD VOLTAGE [V]
1.5
2.0
2.5
0
25
50
75
T
Î, JUNCTION TEMPERATURE [°C]
100
125
150
175
Figure 27. Typical diode forward current as a
function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
Rev. 1.2,
2012-05-29
13
IKW60N60H3
High speed switching series third generation
PG-TO247-3
Rev. 1.2,
2012-05-29
14
IKW60N60H3
High speed switching series third generation
τ
Rev. 1.2,
2012-05-29
15
IKW60N60H3
High speed switching series third generation
Revision History
IKW60N60H3
Revision: 2012-05-29, Rev. 1.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2012-04-23 Preliminary
data sheet
2012-05-29 Prelim.
switching conditions Ic=60A
1.1
1.2
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81726 München, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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Rev. 1.2,
2012-05-29
16
