Infineon-Technologies-IKWH40N65WR6
| Part # | Infineon-Technologies-IKWH40N65WR6 |
Download  | Infineon-Technologies-IKWH40N65WR6 |
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
offers
improved reliability
against package contamination
Features
• V
CE
= 650 V
• I
C
= 40 A
• Pin-to-pin
creepage distance > 4.8 mm
• Pin-to-pin
clearance distance > 3.4 mm
• Monolithic
diode optimized for PFC and welding applications
• Stable
temperature behavior
• Very
low V
CEsat
and low E
off
• Easy
parallel switching capability based on positive temperature
coefficient
of V
CEsat
• Low
temperature dependence of V
CEsat
and E
sw
Potential applications
• PFC
• Welding
• ZCS
applications
Product validation
• Qualified
for industrial applications according to the relevant tests of JEDEC47/20/22
Description
C
G
E
Type
Package
Marking
IKWH40N65WR6
PG-TO247-3-STD-NN4.8
H40EWR6
Datasheet
Please read the sections “Important notice” and “Warnings” at the end of this document
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
Table of contents
Table of contents
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
Potential applications
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
1
2
3
4
5
6
Package
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Diode
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16
Disclaimer
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
7
Datasheet
2
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
1 Package
1
Package
Table 1
Characteristic values
Symbol Note
or test condition
Parameter
Values
Typ.
13
Unit
Min.
Max.
Internal emitter
inductance measured 5
mm (0.197 in.) from case
L
E
nH
Storage temperature
Soldering temperature
T
stg
-55
150
260
°C
°C
T
sold
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
Mounting torque
M
M3 screw, Maximum of mounting process: 3
0.6
40
Nm
Thermal resistance,
junction-ambient
R
th(j-a)
K/W
IGBT thermal resistance,
junction-case
R
th(j-c)
R
th(j-c)
0.9
4.2
K/W
K/W
Diode thermal resistance,
junction-case
2
IGBT
Table 2
Maximum rated values
Symbol Note
or test condition
Parameter
Values
650
70
Unit
Collector-emitter voltage
V
CE
T
vj
≥ 25 °C
V
A
DC collector current,
limited by T
vjmax
I
C
T
c
= 25 °C
T
c
= 100 °C
45
Pulsed collector current, t
p
limited by T
vjmax
I
Cpulse
120
A
A
Turn-off
safe operating
area
V
CE
≤ 650 V,
T
vj
≤ 175 °C
t
p
≤ 10 µs,
D
< 0.01
120
Gate-emitter voltage
V
GE
V
GE
20
30
V
V
Transient gate-emitter
voltage
Power dissipation
P
tot
T
c
= 25 °C
175
78
W
T
c
= 100 °C
Table 3
Characteristic values
Symbol Note
or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Collector-emitter
breakdown voltage
V
BRCES
I
C
= 0.2 mA,
V
GE
=0 V
650
V
(table continues…)
Datasheet
3
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
2 IGBT
Table 3
(continued) Characteristic values
Symbol Note
or test condition
Parameter
Values
Typ.
1.55
1.8
Unit
Min.
Max.
Collector-emitter
saturation voltage
V
CEsat
I
C
= 40 A,
V
GE
= 15 V
T
vj
= 25 °C
1.85
V
V
T
vj
= 175 °C
Gate-emitter threshold
voltage
V
GEth
I
CES
I
C
= 0.4 mA, V
CE
= V
GE
V
CE
= 650 V,
V
GE
=0 V
3.2
4
4.8
40
Zero gate-voltage collector
current
T
vj
= 25 °C
µA
mA
nA
T
vj
= 175 °C
0.5
Gate-emitter leakage
current
I
GES
V
CE
=0 V,
V
GE
= 20 V
I
C
= 40 A,
V
CE
= 20 V
100
Transconductance
Input capacitance
Output capacitance
g
fs
C
ies
C
oes
C
res
89
2890
28
S
V
CE
= 25 V,
V
GE
=0 V,
f
= 100 kHz
V
CE
= 25 V,
V
GE
=0 V,
f
= 100 kHz
V
CE
= 25 V,
V
GE
=0 V,
f
= 100 kHz
pF
pF
pF
Reverse transfer
capacitance
11
Gate charge
Q
G
I
C
= 40 A,
V
GE
= 15 V,
V
CC
= 520 V
117
37
nC
ns
Turn-on delay time
t
d(on)
V
CC
= 400 V,
V
GE
= 0/15 V,
T
vj
= 25 °C,
R
G(on)
= 27 Ω,
I
C
= 40 A
R
G(off)
= 27 Ω,
L
= 30 nH,
σ
T
vj
= 175 °C,
I
C
= 40 A
34
24
C
= 26 pF
σ
Rise time (inductive load)
Turn-off
delay time
t
r
t
d(off)
t
f
V
CC
= 400 V,
V
GE
= 0/15 V,
T
vj
= 25 °C,
ns
ns
R
G(on)
= 27 Ω,
I
C
= 40 A
R
G(off)
= 27 Ω,
L
= 30 nH,
σ
T
vj
= 175 °C,
I
C
= 40 A
25
C
= 26 pF
σ
V
CC
= 400 V,
V
GE
= 0/15 V,
T
vj
= 25 °C,
353
401
23
R
G(on)
= 27 Ω,
I
C
= 40 A
R
G(off)
= 27 Ω,
L
= 30 nH,
σ
T
vj
= 175 °C,
I
C
= 40 A
C
= 26 pF
σ
Fall time (inductive load)
V
CC
= 400 V,
V
GE
= 0/15 V,
T
vj
= 25 °C,
ns
R
G(on)
= 27 Ω,
I
C
= 40 A
R
G(off)
= 27 Ω,
L
= 30 nH,
σ
T
vj
= 175 °C,
I
C
= 40 A
18
C
= 26 pF
σ
Turn-on energy
E
on
V
CC
= 400 V,
V
GE
= 0/15 V,
T
vj
= 25 °C,
1.09
1.23
mJ
R
G(on)
= 27 Ω,
I
C
= 40 A
R
G(off)
= 27 Ω,
L
= 30 nH,
σ
T
vj
= 175 °C,
I
C
= 40 A
C
= 26 pF
σ
(table continues…)
Datasheet
4
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
3 Diode
Table 3
(continued) Characteristic values
Symbol Note
or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Turn-off
energy
E
off
E
ts
T
vj
V
CC
= 400 V,
V
GE
= 0/15 V,
T
vj
= 25 °C,
0.57
mJ
R
G(on)
= 27 Ω,
I
C
= 40 A
R
G(off)
= 27 Ω,
L
= 30 nH,
σ
T
vj
= 175 °C,
I
C
= 40 A
0.89
1.66
2.12
C
= 26 pF
σ
Total switching energy
V
CC
= 400 V,
V
GE
= 0/15 V,
T
vj
= 25 °C,
mJ
°C
R
G(on)
= 27 Ω,
I
C
= 40 A
R
G(off)
= 27 Ω,
L
= 30 nH,
σ
T
vj
= 175 °C,
I
C
= 40 A
C
= 26 pF
σ
Operating junction
temperature
-40
175
Note:
Electrical Characteristic, at T
vj
= 25°C, unless otherwise specified.
3
Diode
Table 4
Maximum rated values
Parameter
Symbol Note
or test condition
Values
Unit
Repetitive peak reverse
voltage
V
RRM
T
vj
≥ 25 °C
650
V
Diode forward current,
limited by T
vjmax
I
F
T
c
= 25 °C
20
11
40
A
A
T
c
= 100 °C
Diode pulsed current, t
p
limited by T
vjmax
I
Fpulse
Table 5
Characteristic values
Symbol Note
or test condition
Parameter
Values
Typ.
1.3
Unit
V
Min.
Max.
Diode forward voltage
V
F
I
F
= 10 A
T
vj
= 25 °C
1.6
T
vj
= 175 °C
1.3
Diode reverse recovery
time
t
rr
V
R
= 400 V
T
vj
= 25 °C,
79
ns
I
F
= 20 A,
-di
F
/dt
= 1460 A/µs
T
vj
= 175 °C,
104
I
F
= 20 A,
-di
F
/dt
= 1350 A/µs
(table continues…)
Datasheet
5
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
3 Diode
Table 5
(continued) Characteristic values
Symbol Note
or test condition
Parameter
Values
Typ.
1.4
Unit
Min.
Max.
Diode reverse recovery
charge
Q
rr
V
R
= 400 V
T
vj
= 25 °C,
µC
I
F
= 20 A,
-di
F
/dt
= 1460 A/µs
T
vj
= 175 °C,
2.5
24.7
38.3
383
821
I
F
= 20 A,
-di
F
/dt
= 1350 A/µs
Diode peak reverse
recovery current
I
rrm
V
R
= 400 V
T
vj
= 25 °C,
I
F
= 20 A,
-di
F
/dt
= 1460 A/µs
A
A/µs
°C
T
vj
= 175 °C,
I
F
= 20 A,
-di
F
/dt
= 1350 A/µs
Diode peak rate of fall of
reverse recovery current
di
rr
/dt V
R
= 400 V
T
vj
= 25 °C,
I
F
= 20 A,
-di
F
/dt
= 1460 A/µs
T
vj
= 175 °C,
I
F
= 20 A,
-di
F
/dt
= 1350 A/µs
Operating junction
temperature
T
vj
-40
175
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Datasheet
6
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
4
Characteristics diagrams
Reverse bias safe operating area
I
C
= f(V
CE
Power dissipation as a function of case temperature
P
tot
= f(T
c
)
)
T
vj
≤ 175 °C, T
c
= 25 °C, V
GE
= 15 V
T
vj
≤ 175 °C
180
160
140
120
100
80
100
10
60
40
20
1
0
1
10
100
1000
0
25
50
75
100
125
150
175
Collector current as a function of case temperature
I
C
= f(T
c
)
Typical output characteristic
I
C
= f(V
CE
)
T
vj
≤ 175 °C, V
GE
≥ 15 V
T
vj
= 25 °C
80
70
60
50
40
30
20
10
0
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
0
1
2
3
4
5
Datasheet
7
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
Typical output characteristic
I
C
= f(V
CE
Typical transfer characteristic
I
C
= f(V
GE
)
)
T
vj
= 175 °C
V
CE
= 20 V
160
120
140
120
100
80
100
80
60
40
20
0
60
40
20
0
0
1
2
3
4
5
3
4
5
6
7
8
Typical collector-emitter saturation voltage as a
function of junction temperature
Gate-emitter threshold voltage as a function of
junction temperature
V
CEsat
= f(T
vj
)
V
GEth
= f(T
vj
)
V
GE
= 15 V
I
C
= 0.4 mA
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
6
5
4
3
2
1
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
Datasheet
8
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
Typical switching times as a function of collector
current
t = f(I
C
)
Typical switching times as a function of gate resistor
t = f(R
G
)
I
C
= 40 A, V
CC
= 400 V, T
vj
= 175 °C, V
GE
= 0/15 V
V
CC
= 400 V, T
vj
= 175 °C, V
GE
= 0/15 V, R
G
= 27 Ω
1000
100
10
1000
100
10
1
1
10
20
30
40
50
60
70
80
9
18
27
36
45
54
63
72
81
Typical switching times as a function of junction
temperature
Typical switching energy losses as a function of
collector current
t = f(T
vj
)
E = f(I
C
)
I
C
= 40 A, V
CC
= 400 V, V
GE
= 0/15 V, R
G
= 27 Ω
V
CC
= 400 V, T
vj
= 175 °C, V
GE
= 0/15 V, R
G
= 27 Ω
1000
100
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
Datasheet
9
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
Typical switching energy losses as a function of gate
resistor
E = f(R
G
)
Typical switching energy losses as a function of
junction temperature
E = f(T
vj
)
I
C
= 40 A, V
CC
= 400 V, T
vj
= 175 °C, V
GE
= 0/15 V
I
C
= 40 A, V
CC
= 400 V, V
GE
= 0/15 V, R
G
= 27 Ω
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
50
75
100
125
150
175
9
18
27
36
45
54
63
72
81
Typical switching energy losses as a function of
collector emitter voltage
Typical gate charge
V
GE
= f(Q
G
)
I
C
= 40 A
E = f(V
CE
)
I
C
= 40 A, T
vj
= 175 °C, V
GE
= 0/15 V, R
G
= 27 Ω
3.0
16
14
12
10
8
2.5
2.0
1.5
1.0
0.5
0.0
6
4
2
0
200
250
300
350
400
450
500
0
20
40
60
80
100
120
Datasheet
10
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
Typical capacitance as a function of collector-emitter
IGBT transient thermal impedance as a function of
voltage
C = f(V
CE
f = 100 kHz, V
GE
= 0 V
pulse width
Z
th(j-c)
= f(t
p
)
D = t
p
/T
)
10000
1
1000
100
10
0.1
0.01
1E-5
1
0.0001
0.001
0.01
0.1
1
0
5
10
15
20
25
30
Diode transient thermal impedance as a function of
pulse width
Typical diode forward current as a function of forward
voltage
Z
th(j-c)
= f(t
p
)
I
F
= f(V
F
)
D = t
p
/T
10
1
160
140
120
100
80
0.1
60
0.01
0.001
40
20
0
1E-7 1E-6 1E-5
0.0001 0.001
0.01
0.1
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Datasheet
11
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
Typical diode forward voltage as a function of
junction temperature
V
F
= f(T
vj
)
Typical reverse recovery time as a function of diode
current slope
t
rr
= f(di
F
/dt)
V
R
= 400 V, I
F
= 20 A
2.5
200
160
120
80
2.0
1.5
1.0
0.5
0.0
40
0
0
25
50
75
100
125
150
175
500
1000
1500
2000
2500
Typical reverse recovery charge as a function of diode
Typical reverse recovery current as a function of
current slope
Q
rr
= f(di
F
/dt)
diode current slope
I
rrm
= f(di
F
/dt)
I
F
= 20 A, V
R
= 400 V
I
F
= 20 A, V
R
= 400 V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
40
30
20
10
0
0.5
500
1000
1500
2000
2500
500
1000
1500
2000
2500
Datasheet
12
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
Typical diode peak rate of fall of reverse recovery
current as a function of diode current slope
di
rr
/dt = f(di
F
/dt)
Typical reverse energy losses as a function of diode
current slope
E
rec
= f(di
F
/dt)
V
R
= 400 V, I
F
= 20 A
V
R
= 400 V, I
F
= 20 A
0
-2000
-4000
-6000
-8000
-10000
1.25
1.00
0.75
0.50
0.25
0.00
500
500
1000
1500
2000
2500
1000
1500
2000
2500
Typical diode current slope as a function of gate
resistor
di
F
/dt = f(R
G
)
V
R
= 400 V, I
F
= 20 A
2500
2250
2000
1750
1500
1250
1000
750
500
9
19
30
40
50
60
71
81
Datasheet
13
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
5 Package outlines
5
Package outlines
P
G-TO247-3-STD-NN4.8
PACKAGE – GROUP
NUMBER:
PG-TO247-3-U04
MILLIMETERS
MIN.
DIMENSIONS
MAX.
5.10
2.51
2.10
1.26
1.90
2.30
1.65
2.06
0.66
21.10
16.85
1.35
0.65
15.90
13.50
2.34
A
A1
A2
b
4.90
2.31
1.90
1.16
b1
b2
b3
b4
c
1.55
1.96
0.59
D
20.90
16.25
1.05
D1
D2
D3
E
0.55
15.70
13.10
2.14
E1
E2
e
5.44
3
N
L
19.80
3.95
20.10
4.30
L1
Figure 1
Datasheet
14
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
6 Testing conditions
6
Testing conditions
V
GE
(t)
I,V
90%
V
GE
t
rr
=
t
a
+
t
b
dI
F
/dt
Q
rr
=
Q
a
+
Q
b
a
b
10%
V
GE
t
Q
a
Q
b
I
C
(t)
dI
90%
I
C
90%
I
C
10%
I
C
10%
I
C
Figure C.
Definition of diode switching
characteristics
t
V
CE
(t)
t
t
t
d(off)
t
f
t
d(on)
t
r
Figure A.
V
GE
(t)
90%
V
GE
Figure D.
10%
V
GE
t
I
C
(t)
CC
2%
I
C
t
V
CE
(t)
Figure E.
Dynamic test circuit
Parasitic inductance L
,
parasitic capacitor C
,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t
2
t
4
E
=
V
CE
x
I
C
x d
t
E
=
V
CE
x
I
C
x d
t
off
on
2%
V
C
C
t
1
t
3
t
t
1
t
2
t
3
t
4
Figure B.
Figure 2
Datasheet
15
Revision 1.30
2022-12-06
IKWH40N65WR6
™
TRENCHSTOP 5
WR6 technology in enhanced creepage and clearance package
Revision history
Revision history
Document revision
Date of release
Description of changes
1.00
1.10
1.20
1.30
2021-05-17
2021-05-18
2021-06-29
2022-12-06
Final datasheet
Update of diagram E = f(Tvj)
Update of diagram E = f(T
vj
)
Update of “DC collector current, limited by T
vjmax
” in table “Maximum
rated values
”
,
f
or 25°C and 100°C
Transient gate-emitter voltage V
GE
in table “Maximum rated values” of
IGBT changed to
30V
Update of diagram “Collector current as a function of case temperature
”
,
I
C
= f(T
c
)
“Forward bias safe operating area” diagram renamed to “Reverse bias
safe operating area”
Correction of package outline dimensions
Change package name to marketing name
Editorial changes
Datasheet
16
Revision 1.30
2022-12-06
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-12-06
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics
(“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Warnings
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies
office.
©
2022 Infineon Technologies AG
All Rights Reserved.
Except as otherwise explicitly approved by Infineon
Technologies in
a written document signed by
Do you have a question about any
aspect of this document?
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
Document reference
IFX-ABA910-004
The data contained in this document is exclusively
intended for technically trained
staff.
It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
