Infineon-Technologies-IMZ120R350M1H
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IMZ120R350M1H
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Silicon Carbide MOSFET
Features
Drain
pin 1
Very low switching losses
Gate
pin 4
Threshold-free on state characteristic
Benchmark gate threshold voltage,
V
GS(th)
= 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Sense
pin 3
Source
pin 2
Robust body diode for hard commutation
Temperature independent turn-off switching losses
Sense pin for optimized switching performance
Benefits
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Reduction of system complexity and cost
Potential applications
Energy generation
o
Solar string inverter and solar optimizer
Industrial power supplies
o
o
Industrial UPS
Industrial SMPS
Infrastructure
–
Charge
Charger
o
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Note:
the source and sense pins are not exchangeable, their exchange might lead to malfunction
Table 1
Type
Key Performance and Package Parameters
V
DS
I
D
R
DS(on)
T
vj
= 25°C,
I
D
= 2A, V
GS
= 18V
T
vj,max
Marking
Package
T
C
= 25°C,
R
th(j-c,max)
IMZ120R350M1H 1200V
4.7A
350
mΩ
175°C
12M1H350
PG-TO247-4
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 1 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Table of contents
Table of contents
Datasheet
2 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Maximum ratings
1
Maximum ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the
maximum ratings stated in this datasheet.
Table 2
Maximum ratings
Parameter
Symbol
Value
Unit
V
Drain-source voltage,
T
vj
≥ 25°C
V
DSS
1200
DC drain current for
R
th(j-c,max)
, limited by
T
vjmax
,
V
GS
= 18V,
T
C
= 25°C
T
C
= 100°C
I
D
4.7
4.7
A
A
1
Pulsed drain current,
t
p
limited by
T
vjmax
,
V
GS
= 18V
I
D,pulse
13
DC body diode forward current for
R
th(j-c,max)
,
limited by
T
vjmax
,
V
GS
= 0V
T
C
= 25°C
T
C
= 100°C
I
SD
A
A
V
4.7
4.7
1
Pulsed body diode current,
t
p
limited by
T
vjmax
Gate-source voltage
2
I
SD,pulse
13
Max transient voltage, < 1% duty cycle
Recommended turn-on gate voltage
Recommended turn-off gate voltage
Short-circuit withstand time
V
DD
= 800V,
V
DS,peak
< 1200V,
V
GS,on
= 15V,
T
j,start
= 25°C
Power dissipation, limited by
T
vjmax
T
C
= 25°C
V
GS
V
GS,on
V
GS,off
-7
…
23
15
… 18
0
µs
W
t
SC
3
P
tot
60
30
T
C
= 100°C
°C
°C
Virtual junction temperature
Storage temperature
T
vj
–
55… 175
–
55… 150
T
stg
Soldering temperature,
wave soldering only allowed at leads,
1.6mm (0.063 in.) from case for 10 s
Mounting torque, M3 screw
T
sold
260
0.6
°C
M
Nm
Maximum of mounting processes: 3
1
verified by design
2
Important note:
The selection of positive and negative gate-source voltages impacts the long-term behavior
of the device. The design guidelines described in
Application Note
AN2018-09
must be considered to ensure
sound operation of the device over the planned lifetime.
Datasheet
3 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Thermal resistances
2
Thermal resistances
Table 3
Parameter
Value
Unit
Symbol Conditions
min.
typ.
1.9
max.
2.5
MOSFET/body diode
thermal resistance,
junction
–
case
R
th(j-c)
–
–
K/W
K/W
Thermal resistance,
junction
–
ambient
R
th(j-a)
leaded
–
62
Datasheet
4 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Electrical Characteristics
3
Electrical Characteristics
3.1
Static characteristics
Table 4
Static characteristics (at
T
vj
= 25°C, unless otherwise specified)
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Drain-source on-state
resistance
R
DS(on)
V
GS
= 18V,
I
D
= 2A,
T
vj
= 25°C
T
vj
= 100°C
T
vj
= 175°C
V
GS
= 15V,
I
D
= 2A,
T
vj
= 25°C
–
–
–
350
446
662
468
–
–
mΩ
–
450
598
Body diode forward
voltage
V
SD
V
GS
= 0V
, I
SD
= 2A
T
vj
= 25°C
T
vj
= 100°C
T
vj
= 175°C
–
–
–
4.1
4.0
3.9
5.2
–
–
V
Gate-source threshold
voltage
V
GS(th)
(tested after 1 ms pulse at
V
GS
= 20V
)
I
D
= 1mA
, V
DS
=
V
GS
T
vj
= 25°C
T
vj
=175°C
V
3.5
–
4.5
3.6
5.7
–
Zero gate voltage drain
current
I
DSS
V
GS
= 0V
, V
DS
= 1200V
T
vj
= 25°C
T
vj
= 175°C
–
–
–
–
–
–
0.1
0.3
–
20
–
µA
Gate-source leakage
current
I
GSS
V
GS
= 23V,
V
DS
= 0V
V
GS
= -7V,
V
DS
= 0V
V
DS
= 20V
, I
D
= 2A
f
= 1MHz,
V
AC
= 25mV
100
nA
nA
S
–
-100
Transconductance
g
fs
1
–
–
Internal gate resistance
R
G,int
35
Ω
Datasheet
5 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Electrical Characteristics
3.2
Dynamic characteristics
Table 5
Parameter
Dynamic characteristics (at
T
vj
= 25°C, unless otherwise specified)
Value
Symbol Conditions
Unit
min.
typ.
182
10
max.
Input capacitance
Output capacitance
Reverse capacitance
C
oss
stored energy
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
C
oss
C
rss
E
oss
Q
G
pF
µJ
nC
V
DD
= 800V,
V
GS
= 0V,
f
= 1MHz,
V
AC
= 25mV
1
3.7
5.3
Total gate charge
V
DD
= 800V,
I
D
= 2A,
V
GS
= 0/18V, turn-on pulse
1.5
1.2
Gate to source charge
Gate to drain charge
Q
GS,pl
Q
GD
Datasheet
6 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Electrical Characteristics
3.3
Switching characteristics
Table 6
Switching characteristics, Inductive load
4
Symbol Conditions
Parameter
Value
Unit
min.
typ.
max.
MOSFET Characteristics,
T
vj
= 25°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 800V,
I
D
= 2A,
V
GS
= 0/18V,
R
G,ext
= 2Ω,
L
σ
= 40nH,
diode:
body diode at
V
GS
= 0V
see Fig. E
–
–
–
–
–
–
–
4.8
0.7
10.8
19.3
24
–
–
–
–
–
–
–
ns
µJ
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
E
on
E
off
E
tot
4
28
Body Diode Characteristics,
T
vj
= 25°C
Diode reverse recovery
charge
Q
rr
V
DD
= 800V,
I
SD
= 2A,
V
GS
at diode = 0V,
d
i
f
/d
t
= 1000A/µs,
Q
rr
includes also
Q
C
,
see Fig. C
nC
A
–
–
64
–
–
Diode peak reverse
recovery current
I
rrm
0.9
MOSFET Characteristics,
T
vj
= 175°C
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 800V,
I
D
= 2A,
V
GS
= 0/18V,
R
G,ext
= 2Ω,
L
σ
= 40nH,
diode:
body diode at
V
GS
= 0V
see Fig. E
–
–
–
–
–
–
–
4.8
1.7
10.8
19.3
34
–
–
–
–
–
–
–
ns
µJ
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
E
on
E
off
E
tot
5
39
Body Diode Characteristics,
T
vj
= 175°C
Diode reverse recovery
charge
Q
rr
V
DD
= 800V,
I
SD
= 2A,
V
GS
at diode = 0V,
d
i
f
/d
t
= 1000A/µs,
Q
rr
includes also
Q
C
,
see Fig. C
nC
A
–
–
80
1
–
–
Diode peak reverse
recovery current
I
rrm
4
The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test
setup and package.
Datasheet
7 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Electrical characteristic diagrams
4
Electrical characteristic diagrams
14
12
10
8
70
60
50
40
30
20
10
0
not for linear use
6
4
R
t
h
(j-c,max)
R
t
h
(j-c,typ)
2
0
0
25 50 75
100 125 150 175
0
400
800
1200
TC
[
C]
V
DS
[V]
Figure 1
Safe operating area (SOA)
(
V
GS
= 0/18V,
T
c
= 25°C,
T
j
≤ 175°C
)
Figure 2
Power dissipation as a function of case
temperature limited by bond wire
(
P
tot
= f(
T
C
))
6
5
4
3
2
1
0
6
5
4
3
2
1
0
R
t
h
(j-c,typ)
R
t
h
(j-c,max)
R
t
h
(j-c,typ)
R
t
h
(j-c,max)
0
25 50 75
100 125 150 175
0
25 50 75
100 125 150 175
T
C
[
C]
T
C
[
C]
Figure 3
Maximum DC drain to source current as
Figure 4
a function of case temperature limited
by bond wire
(
I
DS
= f(
T
C
))
Maximum source to drain current as a
function of case temperature limited by
bond wire
(
I
SD
= f(
T
C
), V
GS
= 0V)
Datasheet
8 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Electrical characteristic diagrams
6
5
4
3
2
1
0
20
25°C
175°C
15
10
5
0
-40
10
60
110
160
0
5
10
15
20
T
vj
[
C]
V
GS
[V]
Figure 6
Typical gate-source threshold voltage
as a function of junction temperature
(
V
GS(th)
= f(
T
vj
)
, I
DS
= 1mA,
V
GS
=
V
DS
)
Figure 5
Typical transfer characteristic
(
I
DS
= f(
V
GS
),
V
DS
= 20V,
t
P
= 20µs)
20
20
20V
18V
16V
15V
14V
12V
10V
8V
20V
18V
16V
15V
14V
12V
10V
8V
16
12
8
16
12
8
6V
6V
4
4
0
0
0
4
8
12
16
20
0
4
8
12
16
20
V
DS
[V]
V
DS
[V]
Figure 7
Typical output characteristic,
V
GS
as
parameter
Figure 8
Typical output characteristic,
V
GS
as
parameter
(
I
DS
= f(V
DS
),
T
vj
=25°C,
t
P
= 20µs)
(
I
DS
= f(V
DS
),
T
vj
=175°C,
t
P
= 20µs)
Datasheet
9 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Electrical characteristic diagrams
900
18
16
14
12
10
8
VGS = 18V
VGS = 15V
600
300
0
6
4
2
0
-40
10
60
110 160
0
1
2
3
4
5
T
vj
[
C]
Q
G
[nC]
Figure 9
Typical on-resistance as a function of
junction temperature
(
R
DS(on)
= f(
T
vj
), I
DS
= 2A)
Figure 10
Typical gate charge
(
V
GS
= f(
Q
G
),
I
DS
= 2A,
V
DS
= 800V, turn-on
pulse)
6
5
4
3
2
1
0
1000
100
10
Ciss
Coss
Crss
1
1
10
100
1000
-40
10
60
110
160
V
DS
[V]
T
vj
[
C]
Figure 11
Typical capacitance as a function of
drain-source voltage
Figure 12
Typical body diode forward voltage as
function of junction temperature
(
V
SD
=f(
T
vj
),
V
GS
=0V,
I
SD
=2A)
(
C
= f(
V
DS
),
V
GS
= 0V,
f
= 1MHz)
Datasheet
10 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Electrical characteristic diagrams
6
6
5
4
3
2
1
0
V
GS
=18V
V
GS
=18V
V
GS
=15V
V
GS
=15V
5
4
3
2
1
0
V
GS
=0V
V
GS
=-2V
V
GS
=0V
V
GS
=-2V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
SD
[V]
V
SD
[V]
Figure 13
Typical body diode forward current as
Figure 14
Typical body diode forward current as
function of forward voltage,
V
GS
as
parameter
function of forward voltage,
V
GS
as
parameter
(
I
SD
= f(
V
SD
),
T
vj
= 25°C,
t
P
= 20µs)
(
I
SD
= f(
V
SD
),
T
vj
= 175°C,
t
P
= 20µs)
50
40
30
20
10
0
100
80
60
40
20
0
Etot
Eon
Eoff
Etot
Eon
Eoff
25
75
125
T
vj
[
C]
175
0
1
2
3
4
I
D
[A]
Figure 15
Typical switching energy losses as a
function of junction temperature
Figure 16
Typical switching energy losses as a
function of drain-source current
(
E
= f(
I
DS
),
V
DD
= 800V,
V
GS
= 0V/18V,
R
G,ext
= 2
Ω,
T
vj
= 175°C, ind. load, test
circuit in Fig. E, diode: body diode at
V
GS
= 0V)
(
E
= f(
T
vj
),
V
DD
= 800V,
V
GS
= 0V/18V,
R
G,ext
= 2
Ω,
I
D
= 2A, ind. load, test circuit in
Fig. E, diode: body diode at
V
GS
= 0V)
Datasheet
11 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Electrical characteristic diagrams
40
30
20
10
0
100
Etot
td(on)
tr
td(off)
tf
Eon
80
60
40
20
0
Eoff
0
20 40 60 80
100 120
R
G
[Ohm]
0
20 40 60 80
100 120
R
G
[Ohm]
Figure 17
Typical switching energy losses as a
function of gate resistance
Figure 18
Typical switching times as a function of
gate resistor
(
E
= f(
R
G,ext
),
V
DD
= 800V,
V
GS
= 0V/18V,
I
D
= 2A,
T
vj
= 175°C, ind. load, test circuit in
Fig. E,
diode: body diode at
V
GS
= 0V)
(
t
= f(
R
G,ext
),
V
DD
= 800V,
V
GS
= 0V/18V,
I
D
= 2A,
T
vj
= 175°C, ind. load, test circuit in
Fig. E, diode: body diode at
V
GS
= 0V)
4
0.4
0.3
0.2
175°C
25°C
3
2
1
0
0.1
175°C
25°C
0.0
0
2000
4000
6000
0
2000
4000
6000
di
F
/dt[A/µs]
di
F
/dt[A/µs]
Figure 19
Typical reverse recovery charge as a
function of diode current slope
(
Q
rr
= f(d
i
f
/d
t
),
V
DD
= 800V,
V
GS
= 0V/18V,
I
D
= 2A, ind. load, test circuit in Fig.E,
body
diode at
V
GS
= 0V)
Figure 20
Typical reverse recovery current as a
function of diode current slope
(
I
rrm
= f(d
i
f
/d
t
),
V
DD
= 800V,
V
GS
= 0V/18V,
I
D
= 2A, ind. load, test circuit in Fig.E,
body diode at
V
GS
= 0V)
Datasheet
12 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Electrical characteristic diagrams
10.00
1.00
0.10
0.01
0.5
0.2
0.1
0.05
0.02
0.01
S
i
n
g
l
e
P
ulse
i:
1
2
3
4
ri: [K/W]
5.73E-01
τi: [s]
1.67E-01
8.48E-06
1.27E+00 4.93E-01
1.30E-03 9.24E-03
2.48E-04
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
tp [s]
Figure 21
Max. transient thermal resistance (MOSFET/diode)
(
Z
th(j-c,max)
= f(
t
P
), parameter
D
=
t
p
/
T
, thermal equivalent circuit in Fig. D)
Datasheet
13 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Package drawing
5
Package drawing
PG-TO247-4
Figure 22
Package drawing
Datasheet
14 of 17
2.1
2019-12-10
IMZ120R350M1H
CoolSiC™
1200V SiC Trench MOSFET
Test conditions
6
Test conditions
Figure 23
Test conditions
Datasheet
15 of 17
2.1
2019-12-10
IMZ120R350M1H
1200V SiC Trench MOSFET
Revision history
Revision history
Document
version
Date of release
Description of changes
2.0
2.1
2019-08-22
2019-12-10
Final Datasheet
Move the short circuit time from dynamic characteristics table 5 to
maximum ratings table 2.
Update the Figure 12, 13, 14 the body diode forward voltage.
Datasheet
16 of 17
2.1
2019-12-10
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2019.
All Rights Reserved.
Important notice
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
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the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the in
tended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive
Electronics Council.
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Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
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entatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
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