Infineon-Technologies-IPA030N10N3-G
| Part # | Infineon-Technologies-IPA030N10N3-G |
Download  | Infineon-Technologies-IPA030N10N3-G |
IPA030N10N3 G
Opti
MOS
TM
3 Power-Transistor
Product Summary
Features
V
DS
100
3
V
• N-channel, normal level
R
DS(on),max
I
D
m
W
A
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
79
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Ideal for high-frequency switching and synchronous rectification
•Halogen-free accoridng to IEC61249-2-21
Type
IPA030N10N3 G
Package
Marking
PG-TO220-FP
030N10N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T
C
=25 °C
2)
I
D
Continuous drain current
79
56
A
T
C
=100 °C
Pulsed drain current
2)
I
D,pulse
E
AS
T
C
=25 °C
316
I
D
=79 A,
R
GS
=25
W
Avalanche energy, single pulse
Gate source voltage
1000
±20
mJ
V
V
GS
P
tot
T
C
=25 °C
Power dissipation
41
W
°C
T
j
,
T
stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 … 175
55/175/56
1)
J-STD20 and JESD22
2)
See figure 3
Rev. 2.2
page 1
2013-08-27
IPA030N10N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R
thJC
Thermal resistance, junction – case
–
–
3.7
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
V
DS
=
V
GS
,
I
D
=270 µA
Drain-source breakdown voltage
Gate threshold voltage
100
2
–
–
V
2.7
3.5
V
DS
=100 V,
V
GS
=0 V,
T
j
=25 °C
I
DSS
Zero gate voltage drain current
–
–
0.1
10
1
µA
V
DS
=100 V,
V
GS
=0 V,
T
j
=125 °C
100
I
GSS
V
GS
=20 V,
V
DS
=0 V
Gate-source leakage current
–
–
1
100 nA
R
DS(on)
V
GS
=10 V,
I
D
=79 A
Drain-source on-state resistance
2.6
3
m
W
V
GS
=6 V,
I
D
=40 A
–
–
3
4.8
–
R
G
Gate resistance
1.9
W
|
V
DS
|>2|
I
D
|
R
DS(on)max
I
D
=79 A
,
g
fs
Transconductance
86
171
–
S
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2013-08-27
IPA030N10N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
–
–
–
–
–
–
–
11100
1940
69
14800 pF
V
GS
=0 V,
V
DS
=50 V,
f
=1 MHz
C
oss
C
rss
t
d(on)
t
r
2580
–
42
–
–
–
–
ns
38
V
DD
=50 V,
V
GS
=10 V,
I
D
=79 A,
R
G,ext
=1.6
W
t
d(off)
t
f
Turn-off delay time
Fall time
112
37
Gate Charge Characteristics
4)
Gate to source charge
Gate to drain charge
Switching charge
Q
gs
–
–
–
–
–
–
47
27
–
nC
Q
gd
–
V
DD
=50 V,
I
D
=79 A,
V
GS
=0 to 10 V
Q
sw
Q
g
41
–
206
–
Gate charge total
155
4.2
205
V
plateau
Q
oss
Gate plateau voltage
Output charge
V
V
DD
=50 V,
V
GS
=0 V
273 nC
Reverse Diode
I
S
Diode continous forward current
Diode pulse current
–
–
–
–
70
A
T
C
=25 °C
I
S,pulse
316
V
GS
=0 V,
I
F
=79 A,
T
j
=25 °C
V
SD
Diode forward voltage
–
0.9
1.2
V
t
rr
Reverse recovery time
–
–
80
–
–
ns
V
R
=50 V,
I
F
=
25
A,
d
i
F
/d
t
=100 A/µs
Q
rr
Reverse recovery charge
190
nC
4)
See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2013-08-27
IPA030N10N3 G
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
)
I
D
=f(
T
C
);
V
GS
≥10 V
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
3
10
1
limited by on-state
resistance
1 µs
10 µs
100 µs
0.5
10
2
10
0
10
-1
10
-2
0.2
1 ms
0.1
10
1
10 ms
0.05
DC
0.02
0.01
10
0
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
p
[s]
V
DS
[V]
Rev. 2.2
page 4
2013-08-27
IPA030N10N3 G
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
6 Typ. drain-source on resistance
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
250
6
7.5 V
10 V
5 V
5.5 V
5
200
150
100
50
4.5 V
4
5 V
6 V
3
2
1
0
7.5 V
4.5 V
10 V
0
0
1
2
3
0
20
40
60
80
100
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
parameter:
T
j
8 Typ. forward transconductance
g
fs
=f(
I
D
);
T
j
=25 °C
250
200
150
100
200
160
120
80
25 °C
175 °C
50
40
0
0
0
2
4
6
8
0
20
40
60
80
100
V
GS
[V]
I
D
[A]
Rev. 2.2
page 5
2013-08-27
IPA030N10N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
parameter:
I
D
R
DS(on)
=f(
T
j
);
I
D
=79 A;
V
GS
=10 V
7
6
5
4
3.5
3
2700 µA
2.5
270 µA
4
98 %
2
1.5
1
3
typ
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I
F
=f(
V
SD
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
)
parameter:
T
j
10
5
10
3
Ciss
10
4
10
3
10
2
10
1
10
2
Coss
25 °C
175 °C, 98%
175 °C
25 °C, 98%
10
1
Crss
10
0
0
0
20
40
60
80
0.5
1
1.5
2
V
DS
[V]
V
SD
[V]
Rev. 2.2
page 6
2013-08-27
IPA030N10N3 G
13 Avalanche characteristics
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=79 A pulsed
parameter:
V
DD
I
AS
=f(
t
AV
);
R
GS
=25
W
parameter:
T
j(start)
100
10
25 °C
8
100 °C
80 V
150 °C
6
50 V
20 V
10
4
2
0
1
1
10
100
1000
0
40
80
Q
gate
[nC]
120
160
t
AV
[µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
110
105
100
95
V
GS
Q
g
V
gs(th)
Q
g(th)
Q
sw
Q
gd
Q
gate
Q
gs
90
-60
-20
20
60
100
140
180
T
j
[°C]
Rev. 2.2
page 7
2013-08-27
IPA030N10N3 G
PG-TO220-FP
Rev. 2.2
page 8
2013-08-27
IPA030N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.2
page 9
2013-08-27
