Infineon-Technologies-IPA50R140CP

IPA50R140CP  

CoolMOS

TM

Power Transistor  

Features  

Product Summary  

V

!0฀

8M

_Sj  

R

=L”a`#%_Sj  

..)  

)’*-)  

-1  

O

W฀4EHB:M?:;฀8;IJ฀/

=L”a`#

฀?D฀1,ꢀꢀꢁ

 

W฀)EM;IJ฀<?=KH;฀E<฀C;H?J฀/

,+฀

N฀.

Y  

“

Q

Y%fkb  

`<  

W฀2BJH7฀BEM฀=7J;฀9>7H=;

 

W฀”NJH;C;฀:Lꢂ:J฀H7J;:

 

W฀%?=>฀F;7A฀9KHH;DJ฀97F78?B?JO

 

1,ꢃ฀ꢀꢀꢁ฀#-

 

W฀-8ꢃ<H;;฀B;7:฀FB7J?D=ꢄ฀/E%0฀9ECFB?7DJ

ꢀ฀ꢁꢂꢃꢄꢅꢆꢇ฀ꢈꢉꢆꢆ฀ꢈꢄꢉ฀ꢊꢄꢃꢋ฀ꢌꢄꢊꢍꢄꢎꢇꢋ  

)#  

W฀.K7B

!

<?;:฀

ꢈꢄꢉ฀ꢏꢇꢋꢎꢐꢑꢉꢏꢂꢃ฀ꢅꢉꢂꢋꢆ฀ꢂꢍꢍꢃꢏꢌꢂꢑꢏꢄꢇꢐ฀

799EH:?D=฀JE฀'”!”

 

CoolMOS CP is designed for:  

W฀%7H:฀7D:฀IE<JIM?J9>?D=฀0*-0฀<EH฀I;HL;H฀FEM;H฀IKFFB?;I

 

W฀  *฀-# ฀<EH฀฀ꢅ15ꢆ฀+EJ;8EEA฀7:7FJ;Hꢆ฀-!-฀7D:฀) !฀13

 

W฀-4*฀IJ7=;I฀<EH฀0;HL;Hꢆ฀ꢅ:7FJ;H

 

Type  

Package  

Marking  

BI9.)K*-)<I  

I@&MH++)?I  

.K*-)I  

Maximum ratings,

7J฀

T

ꢇꢀꢈ฀Z ꢆ฀KDB;II฀EJ>;HM?I;฀IF;9?<?;:

 

Value  

+,  

Parameter  

Symbol Conditions  

Unit  

 EDJ?DKEKI฀:H7?D฀9KHH;DJ

*#  

I

=  

T

<

ꢇꢀꢈ฀Z

 

9

*.  

T

<

ꢇꢉꢁꢁ฀Z

 

-KBI;:฀:H7?D฀9KHH;DJ

+#  

./  

I

=%bg^eW  

E

9L  

E

9K  

I

9K  

T

<

ꢇꢀꢈ฀Z

 

I

=

ꢇꢊꢋꢌ฀ꢅꢆ฀

V

==

ꢇꢈꢁ฀3

 

I

=

ꢇꢊꢋꢌ฀ꢅꢆ฀

V

==

ꢇꢈꢁ฀3

 

ꢅL7B7D9>;฀;D;H=Oꢆ฀I?D=B;฀FKBI;

 

ꢅL7B7D9>;฀;D;H=Oꢆ฀H;F;J?J?L;฀

t

9K  

/*/  

)’2,  

2′,  

.)  

_C  

9

+#%,#  

+#%,#  

ꢅL7B7D9>;฀9KHH;DJꢆ฀H;F;J?J?L;฀

t

9K  

V

=L

ꢇꢁꢋꢋꢋꢍꢁꢁ฀3

 

*,0#”1฀:

v

(V

t

฀HK==;:D;II

 

:

v

(V

t  

O(`e  

O

V

@L  

w+)  

w,)  

$7J;฀IEKH9;฀LEBJ7=;

 

efSf[U  

ꢅ ฀ꢎ<ꢏꢉ฀%Pꢐ

 

P

faf  

T

<

ꢇꢀꢈ฀Z

 

,-  

ꢃꢈꢈ฀ꢋꢋꢋ฀ꢉꢈꢁ

 

ꢈꢁ

 

-EM;H฀:?II?F7J?ED

 

P

T

ꢆ฀

T

efY  

,F;H7J?D=฀7D:฀IJEH7=;฀J;CF;H7JKH;

 

*EKDJ?D=฀JEHGK;

 

v<  

*ꢀꢋꢈ฀I9H;MI

 

+9C

 

Rev. 2.2  

Page 1  

2018-02-14  

IPA50R140CP  

Maximum ratings,

7J฀

T

ꢇꢀꢈ฀Z ꢆ฀KDB;II฀EJ>;HM?I;฀IF;9?<?;:

 

Value  

*-  

Parameter  

Symbol Conditions  

Unit  

 EDJ?DKEKI฀:?E:;฀<EHM7H:฀9KHH;DJ

*#  

!?E:;฀FKBI;฀9KHH;DJ

+#  

/;L;HI;฀:?E:;฀:

v

(V

t

-#  

I

L  

9

T

<

ꢇꢀꢈ฀Z

 

I

L%bg^eW  

./  

V

v

(V

t  

*.  

O(`e  

Values  

typ.  

Parameter  

Symbol Conditions  

Unit  

min.  

max.  

Thermal characteristics  

R

fZC<  

1>;HC7B฀H;I?IJ7D9;ꢆ฀@KD9J?ED฀ꢃ฀97I;

 

&

&

&

&

,’/. D(P  

/+  

1>;HC7B฀H;I?IJ7D9;ꢆ฀@KD9J?ED฀ꢃ฀

 

S_T[W`f  

R

fZC9  

^WSVWV  

0EB:;H?D=฀J;CF;H7JKH;ꢆ฀

 

M7L;IEB:;H?D=฀EDBO฀7BBEM;:฀7J฀B;7:I

 

ꢉꢋꢑ฀CC฀ꢎꢁꢋꢁꢑꢌ฀?Dꢋꢐ฀

 

<HEC฀97I;฀<EH฀ꢉꢁ฀I

 

T

ea^V  

&

&

+/) v<  

Electrical characteristics,

7J฀

T

ꢇꢀꢈ฀Z ꢆ฀KDB;II฀EJ>;HM?I;฀IF;9?<?;:

 

Static characteristics  

V

“;K#=LL

V

@L

ꢇꢁ฀3ꢆ฀

I

=

ꢇꢀꢈꢁ฀ꢅ

 

!H7?DꢃIEKH9;฀8H;7A:EMD฀LEBJ7=;

 

$7J;฀J>H;I>EB:฀LEBJ7=;

 

.))  

+’.  

&

&

O

V

@L”fZ#  

V

=L

6

V

@L

ꢆ฀

I

=

ꢇꢁꢋꢊꢌ฀Cꢅ

 

,

,’.  

V

=L

ꢇꢈꢁꢁ฀3ꢆ฀

V

@L

ꢇꢁ฀3ꢆ฀

 

T

ꢇꢀꢈ฀Z

 

I

=LL  

6;HE฀=7J;฀LEBJ7=;฀:H7?D฀9KHH;DJ

 

&

&

+

&

x9  

V

=L

ꢇꢈꢁꢁ฀3ꢆ฀

V

@L

ꢇꢁ฀3ꢆ฀

 

T

ꢇꢉꢈꢁ฀Z

 

&

&

&

+)  

&

I

@LL  

V

@L

ꢇꢀꢁ฀3ꢆ฀

V

=L

ꢇꢁ฀3

 

$7J;ꢃIEKH9;฀B;7A7=;฀9KHH;DJ

 

*)) `9  

V

@L

ꢇꢉꢁ฀3ꢆ฀

I

=

ꢇꢉꢍ฀ꢅꢆ฀

 

T

ꢇꢀꢈ฀Z

 

R

=L”a`#  

!H7?DꢃIEKH9;฀EDꢃIJ7J;฀H;I?IJ7D9;

 

)’*,  

)’*-  

“

V

@L

ꢇꢉꢁ฀3ꢆ฀

I

=

ꢇꢉꢍ฀ꢅꢆ฀

 

T

ꢇꢉꢈꢁ฀Z

 

&

)’,+  

&

R

@  

$7J;฀H;I?IJ7D9;

 

f

ꢇꢉ฀*%Pꢆ฀EF;D฀:H7?D

 

ꢃ

ꢀꢋꢀ

 

ꢃ

“

Rev. 2.2  

Page 2  

2018-02-14  

IPA50R140CP  

Values  

typ.  

Parameter  

Symbol Conditions  

Unit  

min.  

max.  

Dynamic characteristics  

&DFKJ฀97F79?J7D9;

 

C

[ee  

&

&

+.-)  

**)  

&

&

b?  

V

@L

ꢇꢁ฀3ꢆ฀

V

=L

ꢇꢉꢁꢁ฀3ꢆ฀

 

f

ꢇꢉ฀*%P

 

C

aee  

,KJFKJ฀97F79?J7D9;

 

“<<;9J?L;฀EKJFKJ฀97F79?J7D9;ꢆ฀;D;H=O฀

 

dW^SfWV

.#  

C

a”Wd#  

&

&

**)  

+,)  

&

&

V

@L

ꢇꢁ฀3ꢆ฀

V

=L

ꢇꢁ฀3฀

 

JE฀ꢍꢁꢁ฀3

 

“<<;9J?L;฀EKJFKJ฀97F79?J7D9;ꢆ฀J?C;฀

 

dW^SfWV

/#  

C

a”fd#  

t

V”a`#  

t

d  

t

V”aXX#  

t

X  

1KHDꢃED฀:;B7O฀J?C;

 

/?I;฀J?C;

 

&

&

&

&

,.  

*-  

1)  

1′)  

&

&

&

&

`e  

V

==

ꢇꢍꢁꢁ฀3ꢆ฀

 

V

@L

ꢇꢉꢁ฀3ꢆ฀

I

=

ꢇꢉꢍ฀ꢅꢆ฀

 

R

@

ꢇꢉꢀꢋꢀ฀

“

 

1KHDꢃE<<฀:;B7O฀J?C;

 

#7BB฀J?C;

 

$7J;฀ >7H=;฀ >7H79J;H?IJ?9I

 

$7J;฀JE฀IEKH9;฀9>7H=;

 

$7J;฀JE฀:H7?D฀9>7H=;

 

$7J;฀9>7H=;฀JEJ7B

 

Q

Ye  

&

&

&

&

**  

*.  

-1  

.’+  

&

&

`<  

Q

YV  

V

==

ꢇꢍꢁꢁ฀3ꢆ฀

I

=

ꢇꢉꢍ฀ꢅꢆ฀

 

V

@L

ꢇꢁ฀JE฀ꢉꢁ฀3

 

Q

Y  

/-  

&

V

b^SfWSg  

$7J;฀FB7J;7K฀LEBJ7=;

 

Reverse Diode  

O

O

V

@L

ꢇꢁ฀3ꢆ฀

I

?

ꢇꢉꢍ฀ꢅꢆ฀

 

T

ꢇꢀꢈ฀Z

 

V

L=  

!?E:;฀<EHM7H:฀LEBJ7=;

 

&

)’2  

*’+  

t

dd  

/;L;HI;฀H;9EL;HO฀J?C;

 

&

&

&

-))  

.’/  

+/  

&

&

&

`e  

x<  

9

V

K

ꢇꢍꢁꢁ฀3ꢆ฀

I

?

6

I

L

ꢆ฀

 

V

i

?

(V

t

ꢇꢉꢁꢁ฀ꢅꢂI

 

Q

dd  

I

dd_  

/;L;HI;฀H;9EL;HO฀9>7H=;

 

-;7A฀H;L;HI;฀H;9EL;HO฀9KHH;DJ

 

)#  

฀’ꢃ01!ꢀꢁ฀7D:฀'”0!ꢀꢀ

 

ꢉꢐ฀

 

)?C?J;:฀EDBO฀8O฀1

 

%_Sj  

+#  

฀-KBI;฀M?:J>฀

t

b

฀B?C?J;:฀8O฀

T

%_Sj  

,#  

฀/;F;J?J?L;฀7L7B7D9>;฀97KI;I฀7::?J?ED7B฀FEM;H฀BEII;I฀J>7J฀97D฀8;฀97B9KB7J;:฀7I

฀

P

9O

6

E

9K

$

f.  

ꢍꢐ฀

 

฀&

L=

“

B

=

ꢆ฀:?ꢂ:J

“

ꢀꢁꢁꢅꢂIꢆ฀3

=<^[`]

ꢇꢍꢁꢁ3ꢆ฀3

bWS]

5O

“;K#=LL

ꢆ฀1

5M

_Sj

ꢆ฀?:;DJ?97B฀BEM฀7D:฀>?=>฀I?:;฀IM?J9>

 

.#  

/#  

0#  

C

C

C

฀?I฀7฀<?N;:฀97F79?J7D9;฀J>7J฀=?L;I฀J>;฀I7C;฀9>7H=?D=฀J?C;฀7I

฀

C

aee

฀M>?B;฀

V

=L

฀?I฀H?I?D=฀<HEC฀ꢁ฀JE฀ꢒꢁꢓ฀

V

=LL’  

฀?I฀7฀<?N;:฀97F79?J7D9;฀J>7J฀=?L;I฀J>;฀I7C;฀IJEH;:฀;D;H=O฀7I

฀

C

aee

฀M>?B;฀

V

=L

฀?I฀H?I?D=฀<HEC฀ꢁ฀JE฀ꢒꢁꢓ฀

V

=LL’  

a”fd#  

a”Wd#  

฀?I฀7฀<?N;:฀97F79?J7D9;฀J>7J฀=?L;I฀J>;฀I7C;฀9>7H=?D=฀J?C;฀7I

฀

C

aee

฀M>?B;฀

V

=L

฀?I฀H?I?D=฀<HEC฀ꢁ฀JE฀ꢒꢁꢓ฀

V

=LL’  

a”fd#  

Rev. 2.2  

Page 3  

2018-02-14  

IPA50R140CP  

1 Power dissipation  

2 Safe operating area  

I

=

6X”

V

=L

ꢐꢄ฀

T

<

ꢇꢀꢈ฀Z ꢄ฀

D

6)  

F7H7C;J;Hꢔ฀

t

b  

P

faf

6X”

T

<

#  

10

2  

35  

30  

25  

20  

15  

10  

5

ꢉ฀I

 

ꢉꢁ฀I

 

B?C?J;:฀8O฀EDꢃIJ7J;

 

dWe[efS`UW  

ꢉꢁꢁ฀I

 

10

1  

ꢉ฀CI

 

ꢉꢁ฀CI

 

10

0  

=<  

10

-1  

0

0

10

0  

10

1  

10

2  

10

3  

50  

100  

150  

T

C

[°C]  

V

DS

[V]  

3 Max. transient thermal impedance  

R

“fZC<#

6X”f

b

ꢐꢄ฀

 

4 Typ. output characteristics  

I

=

6X”

V

=L

ꢐꢄ฀

T

ꢇꢀꢈ฀Z

 

F7H7C;J;Hꢔ฀

D=t

b

(

T  

F7H7C;J;Hꢔ฀

V

@L  

10

1  

75  

60  

ꢀꢁ฀3

 

ꢉꢁ฀3

 

ꢒ฀3

 

)’.  

ꢕ฀3

 

10

0  

)’+  

45  

)’*  

ꢑ฀3

 

)’).  

30  

15  

0

10

-1  

)’)+  

ꢈꢋꢈ฀3

 

)’)*  

ꢈ฀3

 

I?D=B;฀FKBI;

 

ꢍꢋꢈ฀3

 

10

-2  

10

-5  

10

-4  

10

-3  

10

-2  

10

-1  

10

0  

10

1  

0

5

10  

V

DS

[V]  

15  

20  

t

p

[s]  

Rev. 2.2  

Page 4  

2018-02-14  

IPA50R140CP  

6 Typ. drain-source on-state resistance  

5 Typ. output characteristics  

I

=

6X”

V

=L

ꢐꢄ฀

T

ꢇꢉꢈꢁ฀Z

 

F7H7C;J;Hꢔ฀

V

@L  

R

=L”a`#

6X”

I

=

ꢐꢄ฀

T

ꢇꢉꢈꢁ฀Z

 

F7H7C;J;Hꢔ฀

V

@L  

0.8  

0.7  

0.6  

0.5  

50  

40  

30  

20  

10  

0

ꢀꢁ฀3

 

ꢕ฀3

 

ꢉꢁ฀3

 

ꢒ฀3

 

ꢑꢋꢈ฀3

 

ꢕ฀3

 

ꢉꢁ฀3

 

ꢑ฀3

 

ꢑ฀3

 

ꢈꢋꢈ฀3

 

ꢈꢋꢈ฀3

 

0.4  

ꢈ฀3

 

ꢍꢋꢈ฀3

 

0.3  

0.2  

0

10  

20  

30  

I

D

[A]  

40  

50  

60  

0

5

10  

15  

20  

25  

V

DS

[V]  

7 Drain-source on-state resistance  

8 Typ. transfer characteristics  

I

=

6X”

V

@L

ꢐꢄ฀Q

V

=L

m7+m

I

=

m

R

=L”a`#_Sj  

F7H7C;J;Hꢔ฀

T

 

R

=L”a`#

6X”

T

ꢐꢄ฀

I

=

ꢇꢉꢍ฀ꢅꢄ฀

V

@L

ꢇꢉꢁ฀3

 

0.35  

0.3  

90  

75  

60  

45  

30  

15  

0

ꢀꢈ฀Z

 

0.25  

ꢊꢒ฀ꢓ

 

ꢉꢈꢁ฀Z

 

0.2  

fkb  

0.15  

0.1  

0.05  

-60  

-30  

0

30  

60  

90  

120 150 180  

0

3

5

8

10  

T

j

[°C]  

V

GS

[V]  

Rev. 2.2  

Page 5  

2018-02-14  

IPA50R140CP  

9 Typ. gate charge  

V

@L

6X”

Q

YSfW

ꢐꢄ฀

I

=

ꢇꢉꢍ฀ꢅ฀FKBI;:

 

F7H7C;J;Hꢔ฀

V

==  

10 Forward characteristics of reverse diode  

I

?

6X”

V

L=  

#

F7H7C;J;Hꢔ฀

T

 

10

2  

10  

ꢀꢈ฀Z ꢆ฀ꢊꢒꢓ

 

8

ꢉꢁꢁ฀3

 

ꢉꢈꢁ฀Z ꢆ฀ꢊꢒꢓ

 

10

1  

ꢉꢈꢁ฀Z

 

ꢍꢁꢁ฀3

 

ꢀꢈ฀Z

 

6

4

10

0  

2

10

-1  

0

0

0.5  

1

1.5  

2

0

10  

20  

30  

40  

50  

Q

gate

[nC]  

V

SD

[V]  

11 Avalanche energy  

12 Drain-source breakdown voltage  

E

9L

6X”

T

ꢐꢄ฀

I

=

ꢇꢊꢋꢌ฀ꢅꢄ฀

V

==

ꢇꢈꢁ฀3

 

V

;K”=LL#

6X”

T

ꢐꢄ฀

I

=

ꢇꢁꢋꢀꢈ฀Cꢅ

 

580  

560  

540  

520  

500  

480  

460  

440  

700  

600  

500  

400  

300  

200  

100  

0

-60  

-20  

20  

60  

100  

140  

180  

25  

75  

125  

175  

T

j

[°C]  

T

j

[°C]  

Rev. 2.2  

Page 6  

2018-02-14  

IPA50R140CP  

13 Typ. capacitances  

14 Typ. Coss stored energy  

C

6X”

V

=L

ꢐꢄ฀

V

@L

ꢇꢁ฀3ꢄ฀

f

ꢇꢉ฀*%P

 

E

aee

=

X

(V

=L

)  

10

5  

12  

10  

8

10

4  

<[ee  

10

3  

6

<aee  

10

2  

4

10

1  

2

<dee  

10

0  

0

0

0

100  

200  

300  

400  

500  

100  

200  

300  

400  

500  

V

DS

[V]  

V

DS

[V]  

Rev. 2.2  

Page 7  

2018-02-14  

IPA50R140CP  

Definition of diode switching characteristics  

Rev. 2.2  

Page 8  

2018-02-14  

IPA50R140CP  

Outline PG­TO220 FullPAK  

1

2

3

MILLIMETERS  

MIN.  

DIMENSIONS  

MAX.  

4.90  

2.85  

2.86  

0.90  

1.38  

1.51  

1.38  

1.51  

0.63  

16.15  

9.83  

10.65  

DOCUMENT NO.  

A

A1  

A2  

b

4.50  

2.34  

2.42  

0.65  

0.95  

0.95  

0.65  

0.65  

0.40  

15.67  

8.97  

10.00  

Z8B00003319  

REVISION  

07  

b1  

b2  

b3  

b4  

c

SCALE 5:1  

0

1

2

3

4

5mm  

D

EUROPEAN PROJECTION  

D1  

E

e

2.54  

H

28.70  

12.78  

2.83  

29.75  

13.75  

3.45  

L

L1  

øP  

Q

ISSUE DATE  

3.00  

3.30  

27.01.2017  

3.15  

3.50  

Rev. 2.2  

Page 9  

2018-02-14  

500VꢀCoolMOSªꢀCPꢀPowerꢀTransistor  

IPA50R140CP  

RevisionꢀHistory  

IPA50R140CP  

Revision:ꢀ2018-02-26,ꢀRev.ꢀ2.2  

Previous Revision  

Revision Date  

2.2  

Subjects (major changes since last revision)  

Outline PG-TO220 FullPAK update  

2018-02-26  

TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  

AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,  

EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,  

ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  

PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,  

SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.  

TrademarksꢀupdatedꢀAugustꢀ2015  

OtherꢀTrademarks  

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10  

Rev.ꢀ2.2,ꢀꢀ2018-02-26