Infineon-Technologies-IPA50R380CE
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IPA50R380CE
MOSFET
PG-TOꢀ220ꢀFP
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa
price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive
applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest
efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast
switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand
offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀuse/drive
Drain
Pin 2
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications
Gate
Pin 1
Applications
Source
Pin 3
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀlighting.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
I
D
Value
Unit
550
V
0.38
14.1
24.8
32.4
2.54
Ω
A
Q
g,typ
nC
A
I
D,pulse
E
oss
@ 400V
µJ
Typeꢀ/ꢀOrderingꢀCode
Package
PG-TO 220 FullPAK
Marking
RelatedꢀLinks
IPA50R380CE
5R380CE
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.4,ꢀꢀ2016-07-12
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPA50R380CE
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Final Data Sheet
2
Rev.ꢀ2.4,ꢀꢀ2016-07-12
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPA50R380CE
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
14.1
8.9
T
C
= 25°C
A
Continuous drain current
1)
I
D
T
C
= 100°C
Pulsed drain current
2)
I
D,pulse
E
AS
–
–
–
–
–
–
–
–
–
–
32.4
173
0.26
4.0
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
mJ
mJ
A
I
D
=4A; V
DD
= 50V
I
D
=4A; V
DD
= 50V
–
E
AR
I
AR
dv/dt
50
V/ns
V
DS
ꢀ=0…400V
-20
-30
–
–
20
30
static;
V
Gate source voltage
V
GS
AC (f>1 Hz)
Power disspiation (FullPAK)
Operating and storage temperature
Mounting torque
P
tot
–
–
–
–
–
–
–
–
29.2
150
50
W
T
C
=25°C
T
j
,ꢀ
T
stg
–
-40
°C
–
–
–
–
–
–
Ncm M2.5
screws
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
3)
I
S
5.4
A
A
T
C
=25°C
I
S,pulse
dv/dt
32.4
15
T
C
= 25°C
V/ns
V
DS
ꢀ=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°C
A/
µ
s
V
DS
ꢀ=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°C
Maximum diode commutation speed
3)
di
f
/dt
500
Insulation withstand voltage for TO-220
FullPAK
V
ISO
–
–
2500
V
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀTO220ꢀFullꢀPAK
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
4.28
80
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
T
sold
–
–
260
°C
1.6mm (0.063 in.) from case for 10s
1)
Limited by T
j max
<150°C, Maximum Duty Cycle D = 0.5, TO220 equivalent
2)
Pulse width t
p
limited by T
j,max
3)
ꢀ
V
DClink
=400V;ꢀ
V
DS,peak
<
V
(BR)DSS
;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀ
R
G
Final Data Sheet
3
Rev.ꢀ2.4,ꢀꢀ2016-07-12
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPA50R380CE
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
500
Typ.
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,ꢀ
I
D
=1mA
2.50
3
3.50
V
DS
=
V
GS
,ꢀ
I
D
=0.26mA
–
–
–
10
1
–
V
DS
=500V,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=500V,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage curent
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
I
GSS
–
–
100
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.34
0.89
0.38
–
V
GS
=13V,ꢀ
I
D
=3.2A,ꢀ
T
j
=25°C
V
GS
=13V,ꢀ
I
D
=3.2A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
3
–
Ω
f
=1ꢀMHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
584
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
C
oss
40
Effective output capacitance, energy
related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
32
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance, time
related
2)
133
7.2
5.6
35
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=3.9A,
R
G
=3.4
Ω
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=3.9A,
R
G
=3.4
Ω
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=3.9A,
R
G
=3.4
Ω
Turn-off delay time
Fall time
t
d(off)
t
f
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=3.9A,
R
G
=3.4
Ω
8.6
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
3.1
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=400V,ꢀ
I
D
=3.9A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=3.9A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=3.9A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=3.9A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
13.1
24.8
5.3
Q
g
Gate plateau voltage
V
plateau
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
4
Rev.ꢀ2.4,ꢀꢀ2016-07-12
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPA50R380CE
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.85
207
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
V
SD
t
rr
–
–
–
–
–
–
–
–
V
V
GS
=0V,ꢀ
I
F
=3.9A,ꢀ
T
j
=25°C
Reverse recovery time
ns
µC
A
V
R
=400V,ꢀ
I
F
=3.9A,ꢀd
i
F
/d
t
=100A/µs
V
R
=400V,ꢀ
I
F
=3.9A,ꢀd
i
F
/d
t
=100A/µs
V
R
=400V,ꢀ
I
F
=3.9A,ꢀd
i
F
/d
t
=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
rr
I
rrm
1.7
15.5
Final Data Sheet
5
Rev.ꢀ2.4,ꢀꢀ2016-07-12
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPA50R380CE
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Powerꢀdissipationꢀ(FullPAK)
Max.ꢀtransientꢀthermalꢀimpedanceꢀ(FullPAK)
40
10
1
0.5
30
20
10
0
0.2
10
0
0.1
0.05
0.02
10
-1
0.01
single pulse
10
-2
0
40
80
120
160
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
T
C
ꢀ[°C]
t
p
ꢀ[s]
P
tot
=f(
T
C
)
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Safeꢀoperatingꢀareaꢀ(FullPAK)ꢀTj=25°C
Safeꢀoperatingꢀareaꢀ(FullPAK)ꢀTj=80°C
10
2
10
2
1 µs
1 µs
10
1
10
1
10 µs
10 µs
100 µs
100 µs
1 ms
10
0
10
0
1 ms
10 ms
10 ms
10
-1
10
-1
DC
DC
10
-2
10
-2
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Final Data Sheet
6
Rev.ꢀ2.4,ꢀꢀ2016-07-12
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPA50R380CE
Typ.ꢀoutputꢀcharacteristicsꢀTj=25°C
Typ.ꢀoutputꢀcharacteristicsꢀTj=125°C
40
25
20 V
10 V
35
30
25
20
15
10
5
20 V
20
15
10
5
10 V
8 V
8 V
7 V
7 V
6 V
5.5 V
6 V
5 V
5.5 V
4.5 V
5 V
4.5 V
0
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Typ.ꢀdrain-sourceꢀon-stateꢀresistance
Drain-sourceꢀon-stateꢀresistance
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
5.5 V
6.5 V
7 V
5 V
6 V
98%
typ
1.0
0.8
0.6
10 V
0
5
10
15
20
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=3.2ꢀA;ꢀ
V
GS
=13ꢀV
Final Data Sheet
7
Rev.ꢀ2.4,ꢀꢀ2016-07-12
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPA50R380CE
Typ.ꢀtransferꢀcharacteristics
Typ.ꢀgateꢀcharge
35
10
25 °C
9
8
7
6
5
4
3
2
1
30
120 V
25
20
400 V
150 °C
15
10
5
0
0
0
0
2
4
6
8
10
10
20
30
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=3.9ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Avalancheꢀenergy
Drain-sourceꢀbreakdownꢀvoltage
200
580
180
160
140
120
100
80
560
540
520
500
480
460
440
60
40
20
0
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
T
j
ꢀ[°C]
T
j
ꢀ[°C]
E
AS
=f(
T
j
);ꢀ
I
D
=4ꢀA;ꢀ
V
DD
=50ꢀV
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
8
Rev.ꢀ2.4,ꢀꢀ2016-07-12
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPA50R380CE
Typ.ꢀcapacitances
Typ.ꢀCossꢀstoredꢀenergy
10
4
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
3
Ciss
10
2
Coss
10
1
Crss
10
0
0
100
200
300
400
500
0
100
200
300
400
500
V
DS
ꢀ[V]
V
DS
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
E
oss
=
f
(V
DS
)
Forwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
2
10
1
125 °C
25 °C
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
ꢀ[V]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
9
Rev.ꢀ2.4,ꢀꢀ2016-07-12
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPA50R380CE
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
V
DS
R
g
1
V
D
S
(
p
ea
k
)
V
DS
t
rr
V
DS
I
F
t
F
t
S
d
I
F
/ dt
R
g
2
I
F
t
1
0
%
I
rrm
Q
F
Q
S
I
F
dI /
dt
rr
t
rr
=
t
F
+t
S
rr
I
rrm
Q
=
Q
F
+
Q
S
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
10
Rev.ꢀ2.4,ꢀꢀ2016-07-12
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPA50R380CE
6ꢀꢀꢀꢀꢀPackageꢀOutlines
DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
DIM
MIN
4.50
2.34
2.42
0.65
0.95
1.20
0.65
1.20
0.40
MAX
4.90
2.80
2.86
0.90
1.38
1.50
1.38
1.50
0.63
16.15
9.83
10.65
MIN
MAX
0.193
0.110
0.113
0.035
0.054
0.059
0.054
0.059
0.025
0.636
0.387
0.419
DOCUMENT NO.
Z8B00181328
A
A1
A2
b
0.177
0.092
0.095
0.026
0.037
0.047
0.026
0.047
0.016
0.617
0.353
0.394
0
SCALE
b1
b2
b3
b4
c
2.5
0
2.5
5mm
D
15.67
8.97
EUROPEAN PROJECTION
D1
E
10.00
2.54 (BSC)
0.100 (BSC)
e
e1
N
5.08
3
0.200
3
H
28.70
12.78
2.83
29.75
13.75
3.45
1.130
0.503
0.111
0.118
0.124
1.171
0.541
0.136
0.133
0.138
ISSUE DATE
29-04-2016
L
L1
¡3
Q
REVISION
01
3.00
3.38
3.15
3.50
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAK,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.4,ꢀꢀ2016-07-12
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPA50R380CE
RevisionꢀHistory
IPA50R380CE
Revision:ꢀ2016-07-12,ꢀRev.ꢀ2.4
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
2.3
2.4
Release of final data sheet
2011-06-08
2011-06-16
2014-06-12
2016-06-13
2016-07-12
–
Release of final datasheet
Updated ID ratings, package marking code & package drawing
Changed marking information in page 1
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
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Final Data Sheet
13
Rev.ꢀ2.4,ꢀꢀ2016-07-12
