Infineon-Technologies-IPA60R520E6
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MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
CoolMOS™ꢀE6ꢀ600V
600VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPx60R520E6
DataꢀSheet
Rev.ꢀ2.2
Final
PowerꢀManagementꢀ&ꢀMultimarket
600V CoolMOS
”
E6 Power Transistor
IPP60R520E6, IPA60R520E6
1
Description
CoolMOS
”
is a revolutionary technology for high voltage power
MOSFE
T
s
, designed according to the superjunction (SJ) principle
and pioneered by Infineon
T
e
chnologies. CoolMOS
”
E6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
drain
pin 2
Features
gate
pin 1
•
•
•
•
Extremely low losses due to very low FOM R
dson
*Q
g
and E
oss
Very high commutation ruggedness
Easy to use/drive
JEDEC
1)
qualified, Pb-free plating, halogen free
source
pin 3
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1
Key Performance Parameters
Parameter
V
DS
@
T
j,max
R
DS(on),max
Q
g,typ
Value
650
0.52
23.4
22
Unit
V
!
nC
A
I
D,pulse
E
oss
@ 400V
Body diode d
i
/d
t
2.1
µJ
A/µs
500
Type / Ordering Code
IPA60R520E6
Package
Marking
Related Links
PG-TO220 FullPAK
PG-TO220
6R520E6
IFX CoolMOS Webpage
IFX Design tools
IPP60R520E6
1) J-STD20
and JESD22
Final Data Sheet
2
Rev. 2.2, 2014-12-10
600V CoolMOS
”
E6 Power Transistor
IPx60R520E6
Table of Contents
Table of Contents
1
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Package outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16
2
3
4
5
6
7
8
Final Data Sheet
3
Rev. 2.2, 2014-12-10
600V CoolMOS
”
E6 Power Transistor
IPx60R520E6
Maximum ratings
2
Maximum ratings
at
T
j
= 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Values
Min. Typ.
Max.
Unit Note
/ Test Condition
Continuous drain current
1)
I
D
–
–
8.1
5.1
22
A
T
C
= 25 °C
T
C
= 100°C
T
C
=25 °C
Pulsed drain current
2)
I
D,pulse
E
AS
–
–
–
–
A
Avalanche energy, single pulse
153
mJ
I
D
=1.4 A,
V
DD
=50 V
(see table 21)
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
E
AR
I
AR
–
–
–
–
–
0.23
1.4
50
I
D
=1.3 A,
V
DD
=50 V
–
A
dv/dt
V
GS
–
V/ns
V
DS
=0…480 V
-20
-30
–
20
V
static
30
AC (f>1 Hz)
T
C
=25 °C
Power dissipation for
TO-220
P
tot
–
–
66
W
W
°C
Power dissipation for
TO-220 FullPAK
P
tot
–
29
T
C
=25 °C
Operating and storage temperature
T
j
,
T
stg
-55
–
–
–
150
60
Mounting torque
TO-220
Ncm M3
and M3.5 screws
Mounting torque
TO-220 FullPAK
50
M2.5 screws
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
3)
I
S
–
–
–
–
–
–
7
A
A
T
C
=25 °C
T
C
=25 °C
I
S,pulse
dv/dt
22
15
V/ns
V
DS
=0…400 V,
I
SD
”
I
D
,
T
j
=25 °C
Maximum diode commutation
speed
3)
di
f
/dt
500
A/µs (see
table 22)
1) Limited
by
T
j,max.
Maximum duty cycle D=0.75
2) Pulse
width
t
p
limited by
T
j,max
3) Identical
low side and high side switch with identical
R
G
Final Data Sheet
4
Rev. 2.2, 2014-12-10
600V CoolMOS
”
E6 Power Transistor
IPx60R520E6
Thermal characteristics
3
Thermal characteristics
Table 3
Thermal characteristics TO-220 (IPP60R520E6)
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
1.9
Thermal resistance, junction – case
R
thJC
–
–
–
–
°C/W
Thermal resistance, junction –
ambient
R
thJA
62
leaded
Soldering temperature,
wavesoldering only allowed at
leads
T
sold
–
–
260
°C
1.6 mm (0.063 in.)
from case for 10 s
Table 4
Thermal characteristics TO-220FullPAK (IPA60R520E6)
Symbol Values
Typ.
Parameter
Unit
Note /
Test Condition
Min.
Max.
4.3
Thermal resistance, junction – case
R
thJC
–
–
–
–
°C/W
Thermal resistance, junction –
ambient
R
thJA
80
leaded
Soldering temperature,
wavesoldering only allowed at
leads
T
sold
–
–
260
°C
1.6 mm (0.063 in.)
from case for 10 s
Final Data Sheet
5
Rev. 2.2, 2014-12-10
600V CoolMOS
”
E6 Power Transistor
IPx60R520E6
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at
T
j=25 °C, unless otherwise specified.
Table 5
Static characteristics
Symbol
Parameter
Values
Unit
V
Note / Test Condition
Min.
600
2.5
–
Typ.
Max.
Drain-source breakdown voltage
V
(BR)DSS
–
–
V
GS
=0 V,
I
D
=0.25 mA
V
DS
=
V
GS
,
I
D
=0.23mA
Gate threshold voltage
V
GS(th)
I
DSS
3
–
3.5
1
Zero gate voltage drain current
µA
V
DS
=600 V,
V
GS
=0 V,
T
j
=25 °C
–
10
–
V
DS
=600 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
I
GSS
–
–
–
100
nA
V
GS
=20 V,
V
DS
=0 V
Drain-source on-state resistance
R
DS(on)
0.47
0.52
!
V
GS
=10 V,
I
D
=2.8 A,
T
j
=25 °C
–
–
1.22
9
–
–
V
GS
=10 V,
I
D
=2.8A,
T
j
=150 °C
Gate resistance
R
G
!
f
=1 MHz, open drain
Table 6
Dynamic characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
512
35
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
–
–
pF
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
C
oss
C
o(er)
Effective output capacitance,
energy related
1)
23
V
GS
=0 V,
V
DS
=0…480 V
Effective output capacitance, time
C
o(tr)
related
2)
–
100
–
I
D
=constant,
V
GS
=0 V
V
DS
=0…480V
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
12
10
75
9
–
–
–
–
ns
V
DD
=400 V,
V
GS
=13 V,
I
D
=3.5 A,
R
G
= 6.8
!
Turn-off delay time
Fall time
(see table 20)
1)
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
2)
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
Final Data Sheet
6
Rev. 2.2, 2014-12-10
600V CoolMOS
”
E6 Power Transistor
IPx60R520E6
Electrical characteristics
Table 7
Gate charge characteristics
Symbol
Parameter
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
2.8
12
–
–
–
–
nC
V
DD
=480 V,
I
D
=3.5A,
V
GS
=0 to 10 V
Q
gd
Q
g
23.4
5.4
Gate plateau voltage
V
plateau
V
Table 8
Reverse diode characteristics
Symbol
Parameter
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Diode forward voltage
V
SD
–
0.9
–
V
V
GS
=0 V,
I
F
=3.5A,
T
j
=25 °C
Reverse recovery time
t
rr
–
–
–
260
2.5
18
–
–
–
ns
µC
A
V
R
=400 V,
I
F
=3.5A,
d
i
F
/d
t
=100 A/µs
(see table 22)
Reverse recovery charge
Peak reverse recovery current
Q
rr
I
rrm
Final Data Sheet
7
Rev. 2.2, 2014-12-10
600V CoolMOS
”
E6 Power Transistor
IPx60R520E6
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 9
Power dissipation
TO-220
Power dissipation
TO-220 FullPAK
P
tot
= f(
T
C
)
P
tot
= f(
T
C
)
Table 10
Max. transient thermal impedance
TO-220
Max. transient thermal impedance
TO-220 FullPAK
Z
(thJC)
=f(tp); parameter: D=t
p
/T
Z
(thJC)
=f(tp); parameter: D=t
p
/T
Final Data Sheet
8
Rev. 2.2, 2014-12-10
600V CoolMOS
”
E6 Power Transistor
IPx60R520E6
Electrical characteristics diagrams
Table 11
Safe operating area
T
C
=25 °C
Safe operating area
T
C
=25 °C
TO-220
TO-220 FullPAK
I
D
=f(V
DS
);
T
C
=25 °C; D=0; parameter
t
p
I
D
=f(V
DS
);
T
C
=25 °C; D=0; parameter
t
p
Table 12
Safe operating area
T
C
=80 °C
Safe operating area
T
C
=80 °C
TO-220
TO-220 FullPAK
I
D
=f(V
DS
);
T
C
=80 °C; D=0; parameter
t
p
I
D
=f(V
DS
);
T
C
=80 °C; D=0; parameter
t
p
Final Data Sheet
9
Rev. 2.2, 2014-12-10
600V CoolMOS
”
E6 Power Transistor
IPx60R520E6
Electrical characteristics diagrams
Table 13
Typ. output characteristics
T
C
=25 °C
Typ. output characteristics
T
j
=125 °C
I
D
=f(
V
DS
);
T
j
=25 °C; parameter:
V
GS
I
D
=f(
V
DS
);
T
j
=125 °C; parameter:
V
GS
Table 14
Typ. drain-source on-state resistance
Drain-source on-state resistance
R
DS(on)
=f(
I
D
);
T
j
=125 °C; parameter:
V
GS
R
DS(on)
=f(
T
j
);
I
D
=2.8 A;
V
GS
=10 V
Final Data Sheet
10
Rev. 2.2, 2014-12-10
600V CoolMOS
”
E6 Power Transistor
IPx60R520E6
Electrical characteristics diagrams
Table 15
Typ. transfer characteristics
Typ. gate charge
I
D
=f(
V
GS
);
V
DS
=20V
V
GS
=f(
Q
gate
),
I
D
=3.5 A pulsed
Table 16
Avalanche energy
Drain-source breakdown voltage
E
AS
=f(
T
j
);
I
D
=1.4 A;
V
DD
=50 V
V
BR(DSS)
=f(
T
j
);
I
D
=0.25 mA
Final Data Sheet
11
Rev. 2.2, 2014-12-10
600V CoolMOS
”
E6 Power Transistor
IPx60R520E6
Electrical characteristics diagrams
Table 17
Typ. capacitances
Typ.
C
oss
stored energy
C=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
E
OSS
=f(
V
DS
)
Table 18
Forward characteristics of reverse diode
I
F
=f(
V
SD
); parameter:
T
j
Final Data Sheet
12
Rev. 2.2, 2014-12-10
600V CoolMOS
”
E6 Power Transistor
IPx60R520E6
Test circuits
6
Test circuits
Table 19
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
V
DS
90%
V
DS
V
GS
10%
V
GS
t
d
(
of
f
)
t
d(o
n
)
t
on
t
f
t
r
t
off
Table 20
Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
V
D
I
D
V
DS
V
DS
V
DS
I
D
Table 21
Test circuit and waveform for diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
I
D
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Final Data Sheet
13
Rev. 2.2, 2014-12-10
600V CoolMOS
”
E6 Power Transistor
IPx60R520E6
Package outlines
7
Package outlines
Figure 1
Outlines TO-220, dimensions in mm/inches
Final Data Sheet
14
Rev. 2.2, 2014-12-10
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Final Data Sheet
Rev. 2.
2
, 2014-12-
1
0
600VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPx60R520E6
RevisionꢀHistory
IPx60R520E6
Revision:ꢀ2015-02-09,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
Release final data sheet
–
2011-06-08
2011-09-14
2015-02-09
PG-TO220 FullPAK package outline update (creation:2014-12-10)
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
16
Rev.ꢀ2.2,ꢀꢀ2015-02-09
