Infineon-Technologies-IPA65R600E6
| Part # | Infineon-Technologies-IPA65R600E6 |
Download  | Infineon-Technologies-IPA65R600E6 |
MOSFET
Metall Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOS
TM
E6 Power Transistor
IPx65R600E6
Data Sheet
Rev. 2.
3
, 201
8
-0
2
–
28
Power Management & Multimarket
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
1
Description
CoolMOS
TM
is a revolutionary technology for high voltage power MOSFETs,
designed according to the superjunction (SJ) principle and pioneered by
Infineon Technologies. CoolMOS
TM
DE series combines the experience of the
leading SJ MOSFET supplier with high class innovation. The resulting devices
provide all benefits of a fast switching SJ
MOSFET while not sacrificing ease
of use.
Extremely low switching and conduction losses make
switching applications even more efficient, more compact, lighter, and
cooler.
Features
Extremely low losses due to very low F O M R
dson
*Q
g
and E
oss
Very high commutation ruggedness
Easy to use/drive
JEDEC
1)
qualified, Pb-free plating, available in Halogen free mold compound
2)
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages
e.g. PC Silverbox, Adapter, LCD & PDP TV, Lightning, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use o fferrite beads on the gate or
separate totem poles is generally recommended.
Table 1
Key Performance Parameters
Parameter
V
DS
@Tj
max
R
DS(on), max
Q
G, typ
Value
700
0.6
23
Unit
V
Ω
nC
A
I
D, pulse
18
E
oss
@ 400V
Body diode di/dt
2
500
µJ
A/µs
Type / Ordering Code
IPD65R600E6
IPP65R600E6
Package
PG-TO252
PG-TO220
PG-TO220 FullPAK
Marking
65E6600
Related links
IFX Design tools
IPA65R600E6
1) J-STD20
and JESD22
2) For
PG-TO252: non-Halogen free (OPN: IPD65R600E6BT); Halogen free (OPN: IPD65R600E6AT)
Rev. 2.3
Page 2
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table of Contents
Rev. 2.3
Page 3
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
2
Maximum ratings
At
T
j
= 25 °C, unless otherwise specified.
Table 2
Parameter
Maximum ratings
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
7.3
Continuous drain current
1)
I
D
–
–
–
–
–
–
–
–
A
T
C
= 25°C
4.6
18
T
C
= 100°C
T
C
= 25°C
Pulsed drain current
2)
I
D, pulse
E
AS
142
I
D
= 1.3A; V
DD
= 50V;
T
C
= 25°C (see
Averlanche energy, single pulse
mJ
0.21
1.3
50
I
D
=1.3 A, V
DD
=50V
Averlanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
E
AR
I
AR
–
–
–
–
–
–
–
A
dv/dt
V
GS
V/ns
V
V
DS
=0…480 V
static
20
-20
-30
–
30
AC (f >1 Hz)
T
C
= 25°C
Power dissipation for
Non FullPAK
P
tot
P
tot
–
–
63
W
W
Power dissipation for
FullPAK
–
28
T
C
= 25°C
150
60
Operating and storage temperature
T
j
, T
stg
-55
–
–
°C
Mounting torque
TO-220
–
Ncm
M3 and M3.5 screws
M2.5 Screws
50
Mounting torque
TO-220 FullPAK
–
–
6.3
18
Continous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
3)
I
S
–
–
–
–
–
–
A
T
C
= 25°C
I
S, pulsed
dv/dt
di
f
/dt
A
T
C
= 25°C
15
V/ns
A/µs
V
DS
=0…480 V, I
SD
≤
I
D
,
T
C
= 125°C
500
Maxumum diode commutation
speed
3)
(see table 22)
1) Limited
by T
j, max.
Maximum duty cycle D=0.75
2) Pulse
width t
p
limited by T
j, max
3) Identical
low side and high side switch with identical R
G
Rev. 2.3
Page 4
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
3
Thermal characteristics
Table 3
Parameter
Thermal characteristics TO-220 (IPP65R600E6)
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
2.0
–
Thermal resistance, junction-case
R
thJC
R
thJA
–
–
°C/W
62
Thermal resistance, junction-
ambient
–
leaded
260
Soldering temperature,
wavesoldering only allowed at leads
T
sold
–
–
°C
1.6mm (0.063 in.) from
case for 10 s
Table 4
Parameter
Thermal characteristics TO-220 FullPAK (IPA65R600E6)
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
4.5
–
Thermal resistance, junction-case
R
thJC
R
thJA
–
–
°C/W
80
Thermal resistance, junction-
ambient
–
leaded
260
Soldering temperature,
wavesoldering only allowed at leads
T
sold
–
–
°C
1.6mm (0.063 in.) from
case for 10 s
Table 5
Parameter
Thermal characteristics TO-252
(IPD65R600E6)
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
–
2.0
62
Thermal resistance, junction-case
R
thJC
–
–
°C/W
Thermal resistance, junction-ambient
R
thJA
–
SMD version, device on
PCB, minimal footprint
35
–
SMD version, device on
PCB, 6cm
2
cooling area
1)
260
Soldering temperature,
T
sold
–
°C
Reflow MSL1
wave- &reflowsoldering only allowed
1) Device
on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for drain connection. PCB is vertical
without air stream cooling.
Rev. 2.3
Page 5
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
4
Electrical characteristics
Electrical characteristics, at T
j
=25°C, unless otherwise specified
Table 6
Parameter
Static characteristics
Symbol
Values
Unit
Note/Test Condition
Min.
650
Typ.
Max.
–
–
Drain-source Breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
V
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 0.21mA
V
DS
=600 V, V
GS
=0V,
T
j
=25°C
2.5
3
3.5
1
–
–
µA
Zero gate Voltage drain current
I
DSS
–
10
–
V
DS
=600 V, V
GS
=0V,
T
j
=150°C
–
–
–
100
0.6
Gate- source leakage current
Drain- source on- state resistance
Gate resistance
I
GSS
nA
V
GS
= 20V, V
DS
= 0V
0.54
Ω
V
GS
= 10V, I
D
=2.1A,
T
j
= 25°C
R
DS(on)
–
–
1.40
10.5
–
–
V
GS
= 10V, I
D
=2.1A,
T
j
= 150°C
R
G
Ω
f= 1MHz, open drain
Table7
Parameter
Dynamic characteristics
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
440
–
–
–
Input capacitance
Output capacitance
C
iss
–
pF
V
GS
= 0V, V
DS
= 100V,
f= 1MHz
–
30
21
C
oss
C
o(er)
–
–
Effective output capacitance,
energy related
1)
V
GS
= 0V,
V
DS
=
0…480
V
88
–
Effective output capacitance,
time related
2)
C
o(tr)
I
D
= const
V
GS
= 0V, V
DS
=0
…480
V
–
–
–
–
10
8
–
–
–
–
Turn- on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
ns
V
DD
=400 V
V
GS
=13 V, I
D
=3.2A,
R
G
= 6.8
Ω
64
11
Turn- off delay time
Fall time
(see table 20)
1) C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
2) C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
Rev. 2.3
Page 6
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 8
Parameter
Gate charge characteristics
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
2.75
–
–
Gate to source charge
Gate to drain charge
Gate charge, total
Q
GS
Q
GD
Q
G
–
nC
V
DD
= 480V, I
D
= 3.2A,
V
GS
=0 to 10 V
–
12
23
5.5
–
–
–
Gate plateau voltage
V
plateau
V
Table 8
Parameter
Reverse diode characteristics
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
0.9
–
Diode forward voltage
V
SD
–
V
V
GS
=0V, I
F
=3.2A,
T
j
=25°C
–
–
–
270
2.0
13
–
–
–
Reverse recovery time
t
rr
ns
nC
A
V
R
=400 V, I
F
=3.2A,
diF/d
t
=100 A/µs
(see table 22)
Reverse recovery charge
Peak reverse recovery current
Q
rr
I
rrm
Rev. 2.3
Page 7
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
5
Electrical characteristics diagrams
Table 10
Power dissipation
Non FullPAK
Power dissipation
FULLPAK
P
tot
= f(T
C
)
P
tot
= f(T
C
)
Table 11
Max. transient thermal impedance
Non FullPAK
Max. transient thermal impedance
Non FullPAK
Z
(thJC)
=f(tp); parameter: D=t
p
/T
Z
(thJC)
=f(tp); parameter: D=t
p
/T
Rev. 2.3
Page 8
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 12
Safe operating area T
C
=25°C
Non FullPAK
Safe operating area T
C
=25°C
FullPAK
I
D
=f(V
DS
); T
C
=25°C; V
GS
> 7V; D=0; parameter t
p
I
D
=f(V
DS
); T
C
=25°C; V
GS
> 7V; D=0; parameter t
p
Table 13
Safe operating area T
C
=80°C
Non FullPAK
Safe operating area T
C
=80°C
FullPAK
I
D
=f(V
DS
); T
C
=80°C; V
GS
> 7V; D=0; parameter t
p
I
D
=f(V
DS
); T
C
=80°C; V
GS
> 7V; D=0; parameter t
p
Rev. 2.3
Page 9
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 14
Typ. output characteristics T
C
=25°C
Typ. output characteristics T
C
=125°C
I
D
=f(V
DS
); T
j
=25°C; parameter: V
GS
I
D
=f(V
DS
); T
j
=125°C; parameter: V
GS
Table 15
Typ. drain-source on-state resistance
Drain-source on-state resistance
R
DS(on)
=f(I
D
); T
j
=125 °C; parameter: V
GS
R
DS(on)
= f(T
j)
; I
D
=4.9A; V
GS
=10V
Rev. 2.3
Page 10
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 16
Typ. transfer characteristics
Typ. gate charge
I
D
=f(V
GS
); V
DS
=20V
V
GS
=f(Q
gate
), I
D
=4.9 A pulsed
Table 17
Avalanche energy
Drain-source breakdown voltage
E
AS
=f(T
j
); I
D
=1.8 A; V
DD
=50 V
V
BR(DSS)
=f(T
j
); I
D
=1.0 mA
Rev. 2.3
Page 11
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 18
Typ. capacitances
Typ. C
OSS
stored energy
C=f(V
DS
); V
GS
= 0 V; f=1 MHz
E
OSS
=f(V
DS
)
Table 19
Forward characteristics of reverse diode
I
F
=
ƒ
(V
SD
); parameter: T
j
Rev. 2.3
Page 12
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
6
Test circuits
Table 20
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
V
DS
90%
V
DS
V
GS
10%
V
GS
t
d(off)
t
r
t
d(on)
t
on
t
f
t
off
Table 11
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
D
V
DS
V
DS
V
DS
I
D
Table 22
Test circuit for diode characteristics
Diode recovery waveform
Rev. 2.3
Page 13
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
7
Package outlines
Figure 1
Outlines TO-252,, dimensions in mm/inches
Rev. 2.3
Page 14
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Figure 2
Outlines TO220, dimensions in mm/inches
Rev. 2.3
Page 15
2018-02-28
650V CoolMOS
TM
E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
1
2
3
MILLIMETERS
DIMENSIONS
MIN.
4.50
2.34
2.42
0.65
0.95
0.95
0.65
0.65
0.40
15.67
8.97
10.00
MAX.
4.90
2.85
2.86
0.90
1.38
1.51
1.38
1.51
0.63
16.15
9.83
10.65
DOCUMENT NO.
A
A1
A2
b
Z8B00003319
REVISION
07
b1
b2
b3
b4
c
SCALE 5:1
0
1
2
3
4
5mm
D
EUROPEAN PROJECTION
D1
E
e
2.54
H
28.70
12.78
2.83
29.75
13.75
3.45
L
L1
øP
Q
ISSUE DATE
3.00
3.30
27.01.2017
3.15
3.50
Figure 3
Outlines TO220 FullPAK, dimensions in mm
Rev. 2.3
Page 16
2018-02-28
650VꢀCoolMOSªꢀE6ꢀPowerꢀTransistor
IPx65R600E6
RevisionꢀHistory
IPx65R600E6
Revision:ꢀ2018-03-04,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.2
2.3
Revised TO220 Full PAK package drawing on page 16
Outline PG-TO-220 FullPAK update
2016-08-04
2018-03-04
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2018ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
17
Rev.ꢀ2.3,ꢀꢀ2018-03-04
