Infineon-Technologies-IPA80R650CEXKSA2
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MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
CoolMOS™ꢀCE
800VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor
IPA80R650CE
DataꢀSheet
Rev.ꢀ2.1
Final
PowerꢀManagementꢀ&ꢀMultimarket
800VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor
IPA80R650CE
TO-220ꢀFP
1ꢀꢀꢀꢀꢀDescription
CoolMOS™ꢀCEꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs.ꢀTheꢀhighꢀvoltageꢀcapabilityꢀcombinesꢀsafetyꢀwithꢀperformance
andꢀruggednessꢀtoꢀallowꢀstableꢀdesignsꢀatꢀhighestꢀefficiencyꢀlevel.
CoolMOS™ꢀ800VꢀCEꢀcomesꢀwithꢀselectedꢀpackageꢀchoiceꢀofferingꢀthe
benefitꢀofꢀreducedꢀsystemꢀcostsꢀandꢀhigherꢀpowerꢀdensityꢀdesigns.
Features
•ꢀHighꢀvoltageꢀtechnology
•ꢀExtremeꢀdv/dtꢀrated
•ꢀHighꢀpeakꢀcurrentꢀcapability
•ꢀLowꢀgateꢀcharge
•ꢀLowꢀeffectiveꢀcapacitances
•ꢀPb-freeꢀplating,ꢀRoHSꢀCompliant,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀconsumerꢀgradeꢀapplications
Drain
Pin 2, Tab
Gate
Pin 1
Applications
LEDꢀLightingꢀandꢀAdapterꢀinꢀQRꢀFlybackꢀtopology
Source
Pin 3
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j=25°C
R
DS(on),max
Value
800
650
45
Unit
V
m
Ω
nC
A
Q
g.typ
I
D,pulse
24
E
oss
@400V
Body diode di/dt
3.3
µJ
400
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
PG-TO 220 FullPAK
Marking
RelatedꢀLinks
IPA80R650CE
8R650CE
see Appendix A
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2015-06-23
800VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor
IPA80R650CE
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2015-06-23
800VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor
IPA80R650CE
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
–
–
–
–
8.0
5.1
T
C
= 25°C
A
Continuous drain current
1)
I
D
T
C
= 100°C
Pulsed drain current
2)
I
D,pulse
E
AS
E
AR
I
AR
–
–
–
–
–
–
–
–
–
–
–
–
–
–
24
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
–
340
0.20
1.60
50
mJ
mJ
A
I
D
=1.6A; V
DD
=50V; see table 10
–
I
D
=1.6A; V
DD
=50V; see table 10
–
–
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
V/ns
V
DS
=0…640V
-20
-30
–
20
V
static;
30
V
AC (f>1 Hz)
33
W
°C
°C
T
C
=25°C
Storage temperature
-40
-40
–
150
150
50
–
–
Operating junction temperature
Mounting torque
–
Ncm M2.5
screws
Continuous diode forward current
Diode pulse current
2)
I
S
–
8.0
24
A
A
T
C
=25°C
I
S,pulse
–
T
C
=25°C
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt
3)
dv/dt
di
f
/dt
V
ISO
–
–
–
–
–
–
4
V/ns
A/
µ
s
V
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
400
2500
Insulation withstand voltage for
TO-220FP
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
1)
Limited by T
j max
<150°C.
2)
Pulse width t
p
limited by T
j,max
3)
ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀ
R
G
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2015-06-23
800VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor
IPA80R650CE
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀꢀTO-220ꢀFullPAK
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
3.8
Thermal resistance, junction – case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction – ambient
R
thJA
80
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
T
sold
–
–
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2015-06-23
800VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor
IPA80R650CE
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
800
2.1
Typ.
–
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
V
V
V
GS
=0V,ꢀ
I
D
=0.25mA
V
DS
=
V
GS
,ꢀ
I
D
=0.47mA
3.0
3.9
–
–
–
20
–
V
DS
=800,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=800,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
100
I
GSS
–
–
100
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.56
1.50
0.65
–
V
GS
=10V,ꢀ
I
D
=5.1A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=5.1A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
1.2
–
Ω
f
=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1100
46
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
C
oss
Effective output capacitance,
energy related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
36
99
25
15
72
10
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…480V
Effective output capacitance,
time related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…480V
V
DD
=400V,ꢀ
V
GS
=10V,ꢀ
I
D
=8A,
R
G
=10
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=10V,ꢀ
I
D
=8A,
R
G
=10
Ω
;ꢀseeꢀtableꢀ9
V
DD
=400V,ꢀ
V
GS
=10V,ꢀ
I
D
=8A,
R
G
=10
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
V
DD
=400V,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=8A,
R
G
=10
Ω
;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
6
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=640V,ꢀ
I
D
=8A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=640V,ꢀ
I
D
=8A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=640V,ꢀ
I
D
=8A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=640V,ꢀ
I
D
=8A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
22
Q
g
45
Gate plateau voltage
V
plateau
5.5
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ480V
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ480V
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2015-06-23
800VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor
IPA80R650CE
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
1
–
V
V
GS
=0V,ꢀ
I
F
=8A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=8A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
–
–
–
550
7
–
–
–
ns
V
R
=400V,ꢀ
I
F
=8A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=400V,ꢀ
I
F
=8A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Peak reverse recovery current
24
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2015-06-23
800VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor
IPA80R650CE
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
35
10
2
1 µs
30
25
20
15
10
5
10 µs
10
1
100 µs
1 ms
10
0
10 ms
10
-1
DC
10
-2
10
-3
10
-4
0
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
2
10
1
1 µs
10
1
10
0
10 µs
100 µs
1 ms
10 ms
0.5
10
0
0.2
0.1
10
-1
10
-2
10
-3
10
-4
DC
0.05
0.02
10
-1
0.01
single pulse
10
-2
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2015-06-23
800VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor
IPA80R650CE
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
30
15
20 V
10 V
20 V
10 V
25
20
15
10
5
12
6 V
5.5 V
9
6.5 V
5 V
6
6 V
4.5 V
5.5 V
5 V
3
0
0
0
5
10
15
20
25
0
5
10
15
20
25
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀ
t
p
=10ꢀµs;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=150ꢀ°C;
ꢀt
p
=10ꢀµs;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
2.8
1.60
1.50
1.40
1.30
1.20
1.10
1.00
2.4
2.0
0.90
typ
4.5 V
5 V
5.5 V
6 V
98%
0.80
0.70
0.60
0.50
0.40
0.30
0.20
6.5 V
1.6
20 V
10 V
1.2
0
3
6
9
12
15
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=150ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=5.1ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2015-06-23
800VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor
IPA80R650CE
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
30
10
9
8
25 °C
25
20
15
10
5
160 V
640 V
7
6
5
4
3
2
1
0
150 °C
0
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
45
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;
ꢀt
p
=10ꢀµs;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=8.0ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
2
350
25 °C
150 °C
300
250
200
150
100
50
10
1
10
0
10
-1
0
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀ
t
p
=10ꢀµs;ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=1.6ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2015-06-23
800VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor
IPA80R650CE
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
960
940
920
900
880
860
840
820
800
780
760
740
720
700
680
10
4
Ciss
10
3
10
2
Coss
10
1
Crss
10
0
-75 -50 -25
0
25
50
75 100
125 150 175
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=0.25ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
400
500
600
700
800
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2015-06-23
800VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor
IPA80R650CE
6ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
V
DS
R
g
1
V
D
S
(
p
ea
k
)
V
DS
t
rr
V
DS
I
F
t
F
t
S
d
I
F
/ dt
R
g
2
I
F
t
1
0
%
I
rrm
Q
F
Q
S
I
F
dI /
dt
rr
t
rr
=
t
F
+t
S
rr
I
rrm
Q
=
Q
F
+
Q
S
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2015-06-23
800VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor
IPA80R650CE
7ꢀꢀꢀꢀꢀPackageꢀOutlines
/,..,/*6*45
,0(+*5
),/
MIN
4.50
2.34
2.42
0.65
0.95
0.95
0.65
0.65
0.40
MAX
4.90
2.85
2.86
0.90
1.38
1.51
1.38
1.51
0.63
16.15
9.83
10.65
MIN
MAX
0.193
0.112
0.113
0.035
0.054
0.059
0.054
0.059
0.025
0.636
0.387
0.419
)1(7/*06 01″
Z8B00003319
‘
‘#
‘$
9
0.177
0.092
0.095
0.026
0.037
0.037
0.026
0.026
0.016
0.617
0.353
0.394
0
5(‘.*
9#
9$
9%
9&
;
2.5
0
2.5
5mm
)
15.67
8.97
*7412*’0 241-*(6,10
)#
*
10.00
2.54 (BSC)
0.100 (BSC)
=
=#
0
5.08
3
0.200
3
+
28.70
12.78
2.83
29.75
13.75
3.45
1.130
0.503
0.111
0.116
0.124
1.171
0.541
0.136
0.133
0.138
,557* )’6*
.
05-05-2014
.#
@3
3
4*8,5,10
2.95
3.38
04
3.15
3.50
Dimensions do not include mold flash, protrusions or gate burrs
Figure 1
Outline PG-TO 220 FullPAK, dimensions in mm/inches
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2015-06-23
800V CoolMOS™ CE Power Transistor
IPA80R650CE
8
Appendix A
Table 11
Related Links
Final Data Sheet
14
Rev. 2.1,
2015-06-23
800V CoolMOS™ CE Power Transistor
IPA80R650CE
Revision History
IPA80R650CE
Revision: 2015-06-23, Rev. 2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
2014-09-25
2015-06-23
Continuous current Id update
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Published by
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© 2015 Infineon Technologies AG
All Rights Reserved.
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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
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Final Data Sheet
15
Rev. 2.1,
2015-06-23
