Infineon-Technologies-IPAN60R280PFD7S
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IPAN60R280PFD7S
MOSFET
PG-TOꢀ220ꢀFP
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
TheꢀlatestꢀCoolMOS™ꢀPFD7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtarget
costꢀsensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,
motorꢀdrive,ꢀlighting,ꢀetc.
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing
towardsꢀveryꢀslimꢀdesigns.
Drain
Pin 2
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀR
DS(on)
*Q
g
ꢀandꢀR
DS(on)
*E
oss
•ꢀLowꢀswitchingꢀlossesꢀE
oss
,ꢀexcellentꢀthermalꢀbehavior
•ꢀFastꢀbodyꢀdiode
*1
Gate
Pin 1
*2
•ꢀWideꢀrangeꢀportfolioꢀofꢀR
DS(on)
ꢀandꢀpackageꢀvariations
•ꢀIntegratedꢀzenerꢀdiode
Source
Pin 3
*1: Internal body diode
*2: Integrated ESD diode
Benefits
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies
•ꢀExcellentꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀandꢀoptimizeꢀtheꢀdesign
•ꢀHighꢀESDꢀruggedness
Potentialꢀapplications
RecommendedꢀforꢀZVSꢀtopologiesꢀusedꢀinꢀhighꢀdensityꢀchargers,
adapters,ꢀlightingꢀandꢀmotorꢀdrivesꢀapplications,ꢀetc.
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Value
650
280
15.3
31
Unit
V
m
Ω
nC
A
Q
g,typ
I
D,pulse
E
oss
@ 400V
Body diode di
F
/dt
ESD Class (HBM)
2.0
µJ
1300
2
A/µs
–
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
PG-TO 220 FullPAK –
Narrow Lead
IPAN60R280PFD7S
60S280D7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R280PFD7S
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R280PFD7S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
12
7
T
C
=25°C
A
Continuous drain current
1)
I
D
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
E
AS
E
AR
I
AS
–
–
–
–
–
–
–
–
–
–
–
–
–
–
31
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
–
36
mJ
mJ
A
I
D
=2.5A; V
DD
=50V; see table 10
–
0.18
2.5
120
20
I
D
=2.5A; V
DD
=50V; see table 10
–
–
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
V/ns
V
DS
=0…400V
-20
-30
–
V
static;
30
V
AC (f>1 Hz)
24
W
°C
°C
T
C
=25°C
Storage temperature
-40
-40
–
150
150
50
–
–
Operating junction temperature
Mounting torque
–
Ncm M2.5
screws
Continuous diode forward current
1)
Diode pulse current
2)
I
S
–
12
A
A
T
C
=25°C
T
C
=25°C
I
S,pulse
–
31
V
DS
=0…400V,ꢀ
I
SD
<=8.8A,ꢀ
T
j
=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt
3)
dv/dt
–
–
70
V/ns
see table 8
V
DS
=0…400V,ꢀ
I
SD
<=8.8A,ꢀ
T
j
=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
di
F
/dt
–
–
–
–
1300 A/
µ
s
2500
see table 8
V
ISO
V
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50;
DPAK / IPAK equivalent
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R280PFD7S
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
5.31
80
Thermal resistance, junction – case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction – ambient
R
thJA
°C/W leaded
Thermal resistance, junction – ambient
for SMD version
R
thJA
–
–
–
–
–
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
T
sold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R280PFD7S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,ꢀ
I
D
=1mA
4
4.5
V
DS
=
V
GS
,ꢀ
I
D
=0.18mA
–
–
–
4
1
37
V
DS
=600V,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=600V,ꢀ
V
GS
=0V,ꢀ
T
j
=125°C
Zero gate voltage drain current
1)
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
I
GSS
–
–
1000 nA
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.233 0.280
0.549
V
GS
=10V,ꢀ
I
D
=3.6A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=3.6A,ꢀ
T
j
=150°C
R
DS(on)
R
G
Ω
Ω
–
–
11.0
–
f
=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
656
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
C
oss
15
Effective output capacitance, energy
related
2)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
25
230
18
12
48
8
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance, time
related
3)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=10V,ꢀ
I
D
=3.6A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=10V,ꢀ
I
D
=3.6A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
V
DD
=400V,ꢀ
V
GS
=10V,ꢀ
I
D
=3.6A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
V
DD
=400V,ꢀ
V
GS
=10V,ꢀ
I
D
=3.6A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
3.7
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=400V,ꢀ
I
D
=3.6A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=3.6A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=3.6A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=3.6A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
5.2
Q
g
15.3
5.6
Gate plateau voltage
V
plateau
1)
Maximum specification is defined by calculated six sigma upper confidence bound
2)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R280PFD7S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
1.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
–
V
V
GS
=0V,ꢀ
I
F
=3.6A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=3.6A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
–
–
–
71
107
0.39
–
ns
V
R
=400V,ꢀ
I
F
=3.6A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
0.19
4.9
µC
A
V
R
=400V,ꢀ
I
F
=3.6A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R280PFD7S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
25
10
2
1 µs
10 µs
100 µs
10
1
10
0
20
15
10
5
10
-1
10
-2
10
-3
10
-4
10
-5
1 ms
10 ms
DC
0
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
2
10
1
10
1
10
0
1 µs
0.5
10 µs
0.2
10
0
100 µs
0.1
10
-1
10
-2
10
-3
10
-4
10
-5
0.05
1 ms
0.02
0.01
10 ms
10
-1
single pulse
DC
10
-2
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R280PFD7S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
45
30
20 V
10 V
20 V
10 V
40
8 V
25
20
15
10
5
8 V
35
7 V
30
7 V
25
20
15
6 V
10
5.5 V
6 V
5
5.5 V
5 V
5 V
4.5 V
4.5 V
0
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.800
2.5
0.750
7 V
5.5 V
10 V
20 V
6 V
6.5 V
0.700
0.650
0.600
0.550
0.500
0.450
0.400
2.0
1.5
1.0
0.5
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=3.6ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R280PFD7S
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
45
10
25 °C
9
8
7
6
5
4
3
2
1
0
40
120 V
400 V
35
30
25
150 °C
20
15
10
5
0
0
2
4
6
8
10
12
0
5
10
15
20
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=3.6ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
2
40
35
30
25
20
15
10
5
10
1
125 °C
25 °C
10
0
10
-1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=2.5ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R280PFD7S
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
690
10
5
10
4
660
630
600
570
540
10
3
Ciss
10
2
Coss
10
1
Crss
10
0
10
-1
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
3
2
1
0
0
100
200
300
400
500
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R280PFD7S
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
R
g
1
V
DS
R
g
2
I
F
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R280PFD7S
6ꢀꢀꢀꢀꢀPackageꢀOutlines
MILLIMETERS
DIMENSIONS
DOCUMENT NO.
Z8B00188573
MIN.
4.60
2.60
2.47
0.56
1.01
0.46
15.90
9.58
10.40
MAX.
4.80
2.80
2.67
0.69
1.15
0.59
16.10
9.78
10.60
A
A1
A2
b
REVISION
02
SCALE 5:1
b1
c
5mm
0
1
2
3
4
D
D1
E
EUROPEAN PROJECTION
e
2.54
3
N
L
13.45
1.70
3.00
3.25
13.75
1.91
3.20
3.45
L1
øP
Q
ISSUE DATE
21.03.2019
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAKꢀ-ꢀNarrowꢀLead,ꢀdimensionsꢀinꢀmm
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R280PFD7S
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R280PFD7S
RevisionꢀHistory
IPAN60R280PFD7S
Revision:ꢀ2019-11-29,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2.1
2019-10-14
2019-11-29
Modified current Id and Is ratings
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intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
14
Rev.ꢀ2.1,ꢀꢀ2019-11-29
