Infineon-Technologies-IPAN70R900P7S
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IPAN70R900P7S
MOSFET
PG-TOꢀ220ꢀFP
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
TheꢀlatestꢀCoolMOS™ꢀP7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtargetꢀcost
sensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,
lighting,ꢀTV,ꢀetc.
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing
towardsꢀveryꢀslimꢀdesigns.
Drain
Pin 2, Tab
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀR
DS(on)
*Q
g
ꢀandꢀR
DS(on)
*E
oss
•ꢀExcellentꢀthermalꢀbehavior
•ꢀIntegratedꢀESDꢀprotectionꢀdiode
Gate
Pin 1
•ꢀLowꢀswitchingꢀlossesꢀ(E
oss
•ꢀProductꢀvalidationꢀacc.ꢀJEDECꢀStandard
)
Source
Pin 3
Benefits
•ꢀCostꢀcompetitiveꢀtechnology
•ꢀLowerꢀtemperature
•ꢀHighꢀESDꢀruggedness
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors
Potentialꢀapplications
RecommendedꢀforꢀFlybackꢀtopologiesꢀforꢀexampleꢀusedꢀinꢀChargers,
Adapters,ꢀLightingꢀApplications,ꢀetc.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j=25°C
R
DS(on),max
Value
700
0.9
Unit
V
Ω
Q
g,typ
6.8
nC
A
I
D,pulse
12.8
0.9
E
oss
@ 400V
V
(GS)th,typ
µJ
V
3
ESD class (HBM)
1C
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
PG-TO 220 FullPAK –
Narrow Lead
IPAN70R900P7S
70S900P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPAN70R900P7S
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPAN70R900P7S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
6.0
3.5
T
C
= 20°C
A
Continuous drain current
1)
Pulsed drain current
2)
I
D
T
C
= 100°C
I
D,pulse
I
AS
–
–
–
–
–
–
12.8
3.6
A
A
T
C
=25°C
Application (Flyback) relevant
avalanche current, single pulse
3)
measured with standard leakage
inductance of transformer of 5
µ
H
MOSFET dv/dt ruggedness
Gate source voltage
dv/dt
V
GS
100
V/ns
V
DS
ꢀ=0…400V
-16
-30
–
–
16
30
static;
V
AC (f>1 Hz)
Power dissipation
P
tot
–
–
–
–
–
–
–
–
17.9
150
3.1
W
°C
A
T
C
=25°C
–
Operating and storage temperature
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
4)
Maximum diode commutation speed
4)
di
f
/dt
T
j
,ꢀ
T
stg
I
S
-40
–
–
–
–
–
T
C
=25°C
T
C
= 25°C
I
S,pulse
12.8
1
A
dv/dt
V/ns
V
DS
ꢀ=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°C
A/
µ
s
V
DS
ꢀ=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°C
50
Insulation withstand voltage
V
ISO
2500
V
V
rms
, T
C
=25°C, t=1min
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
7.0
Thermal resistance, junction
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
80
°C/W leaded
Thermal resistance, junction
– ambient
for SMD version
R
thJA
–
–
–
–
–
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
T
sold
260
°C
1.6 mm (0.063 in.) from case for 10s
1)
DPAK / IPAK equivalent. Limited by T
j max
. T
j
= 20°C. Maximum duty cycle D=0.5
2)
Pulse width t
p
limited by T
j,max
3)
Proven during verification test.
For explanation please read AN – CoolMOS
TM
700V P7.
4)
ꢀ
V
DClink
=400V;ꢀ
V
DS,peak
<
V
(BR)DSS
;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀ
R
G
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPAN70R900P7S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
700
Typ.
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,ꢀ
I
D
=1mA
2.50
3
3.50
V
DS
=
V
GS
,ꢀ
I
D
=0.06mA
–
–
–
10
1
–
V
DS
=700V,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=700V,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
I
DSS
µ
A
µ
A
Gate-source leakage current incl. Zener
diode
I
GSS
R
DS(on)
R
G
–
–
1
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.74
1.53
0.90
–
V
GS
=10V,ꢀ
I
D
=1.1A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=1.1A,ꢀ
T
j
=150°C
Drain-source on-state resistance
Gate resistance
Ω
Ω
–
1.6
–
f
=1ꢀMHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
211
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
C
oss
5.0
Effective output capacitance, energy
related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
13
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance, time
related
2)
177
12
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=0.9A,
R
G
=5.3
Ω
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=0.9A,
R
G
=5.3
Ω
4.7
58
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=0.9A,
R
G
=5.3
Ω
Turn-off delay time
Fall time
t
d(off)
t
f
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=0.9A,
R
G
=5.3
Ω
31
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=400V,ꢀ
I
D
=0.9A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=0.9A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=0.9A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=0.9A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
2.6
Q
g
6.8
Gate plateau voltage
V
plateau
4.4
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPAN70R900P7S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
V
SD
t
rr
–
–
–
–
–
–
–
–
V
V
GS
=0V,ꢀ
I
F
=1.4A,ꢀ
T
j
=25°C
Reverse recovery time
160
0.5
ns
µC
A
V
R
=400V,ꢀ
I
F
=0.9A,ꢀd
i
F
/d
t
=50A/µs
V
R
=400V,ꢀ
I
F
=0.9A,ꢀd
i
F
/d
t
=50A/µs
V
R
=400V,ꢀ
I
F
=0.9A,ꢀd
i
F
/d
t
=50A/µs
Reverse recovery charge
Peak reverse recovery current
Q
rr
I
rrm
7
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPAN70R900P7S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
30
10
2
25
20
15
10
5
1 µs
10
1
10
0
10 µs
100 µs
1 ms
10 ms
DC
10
-1
10
-2
10
-3
0
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
2
10
1
0.5
0.2
10
1
10
0
1 µs
10 µs
100 µs
1 ms
0.1
10
0
0.05
0.02
10 ms
DC
10
-1
10
-2
10
-3
0.01
single pulse
10
-1
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPAN70R900P7S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
14
10
20 V
10 V
8 V
20 V
10 V
8 V
7 V
9
8
7
6
5
4
3
2
1
0
12
7 V
10
6 V
6 V
5.5 V
8
6
5.5 V
5 V
4
5 V
4.5 V
2
4.5 V
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
6
2.0
5 V
6 V
6.5 V
5.5 V
1.8
1.6
1.4
5
4
3
2
1
0
1.2
98%
7 V
1.0
10 V
typ
0.8
0.6
0.4
0.2
0.0
0
5
10
15
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=1.1ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPAN70R900P7S
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
14
10
9
8
7
25 °C
12
10
6
120 V
400 V
8
150 °C
5
4
3
2
1
0
6
4
2
0
0
2
4
6
8
10
12
0
2
4
6
8
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=0.9ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
10
2
840
25 °C
125 °C
820
800
780
760
740
720
700
680
660
640
620
600
10
1
10
0
10
-1
0.0
0.5
1.0
1.5
2.0
-75 -50 -25
0
25
50
75 100
125 150 175
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPAN70R900P7S
Diagramꢀ14:ꢀTyp.ꢀcapacitances
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
10
4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
3
Ciss
10
2
Coss
10
1
Crss
10
0
10
-1
0
100
200
300
400
500
0
100
200
300
400
500
600
700
V
DS
ꢀ[V]
V
DS
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=250ꢀkHz
E
oss
=
f
(V
DS
)
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPAN70R900P7S
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
R
g
1
V
DS
R
g
2
I
F
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPAN70R900P7S
6ꢀꢀꢀꢀꢀPackageꢀOutlines
MILLIMETERS
DIMENSIONS
DOCUMENT NO.
Z8B00180155
MIN.
4.60
2.60
2.47
0.56
1.01
0.46
15.90
9.58
10.40
MAX.
4.80
2.80
2.67
0.69
1.15
0.59
16.10
9.78
10.60
A
A1
A2
b
REVISION
04
SCALE 5:1
b1
c
5mm
0
1
2
3
4
D
D1
E
EUROPEAN PROJECTION
e
2.54
3
N
L
13.45
1.70
3.00
3.25
13.75
1.90
3.20
3.45
L1
¡3
Q
ISSUE DATE
07.11.2016
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAKꢀ-ꢀNarrowꢀLead,ꢀdimensionsꢀinꢀmmꢀ-ꢀIndustrialꢀGrade
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPAN70R900P7S
RevisionꢀHistory
IPAN70R900P7S
Revision:ꢀ2018-02-13,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
Corrected front page text
2017-09-15
2018-02-13
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
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(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2018-02-13
