Infineon-Technologies-IPAW60R380CE
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IPAW60R380CE
MOSFET
PGꢀ-ꢀTO220ꢀFullPAKꢀWideCreepage
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa
price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive
applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest
efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast
switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand
offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀuse/drive
Drain
Pin 2, Tab
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications
•ꢀWideꢀdistanceꢀofꢀ4.25mmꢀbetweenꢀtheꢀleads
Gate
Pin 1
Source
Pin 3
Applications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀlighting.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
I
D.
Value
650
380
15
Unit
V
m
Ω
A
Q
g.typ
32
nC
A
I
D,pulse
30
E
oss
@400V
2.8
µJ
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
PG – TO220 FullPAK
WideCreepage
IPAW60R380CE
60S380CE
see Appendix A
Final Data Sheet
1
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPAW60R380CE
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Final Data Sheet
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2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPAW60R380CE
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
15
9.5
T
C
=25°C
A
Continuous drain current
1)
I
D
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
E
AS
E
AR
I
AR
–
–
–
–
–
–
–
–
–
–
–
–
–
–
30
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation (Full PAK)
Storage temperature
–
210
0.32
1.8
50
mJ
mJ
A
I
D
=1.8A; V
DD
=50V; see table 10
–
I
D
=1.8A; V
DD
=50V; see table 10
–
–
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
V/ns
V
DS
=0…480V
-20
-30
–
20
V
static;
30
V
AC (f>1 Hz)
31
W
°C
°C
T
C
=25°C
-40
-40
–
150
150
50
–
–
Operating junction temperature
Mounting torque
–
Ncm M2.5
screws
Continuous diode forward current
Diode pulse current
2)
I
S
–
10.6
30
A
A
T
C
=25°C
I
S,pulse
–
T
C
=25°C
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt
3)
dv/dt
di
f
/dt
P
tot
–
–
–
–
–
–
–
–
15
V/ns
A/
µ
s
W
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
500
112
2500
Power dissipation (Non FullPAK)
TO-220
–
Insulation withstand voltage for
TO-220FP
V
ISO
V
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
1)
Limited by T
j max
. Maximum duty cycle D=0.50, TO220 equivalent
2)
Pulse width t
p
limited by T
j,max
3)
ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀ
R
G
Final Data Sheet
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600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPAW60R380CE
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀꢀ(FullꢀPAK)
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
4
Thermal resistance, junction – case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction – ambient
R
thJA
80
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
T
sold
–
–
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
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600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPAW60R380CE
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
2.5
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
V
V
V
GS
=0V,ꢀ
I
D
=0.25mA
V
DS
=
V
GS
,ꢀ
I
D
=0.32mA
3.0
3.5
–
–
–
10
1
–
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
I
GSS
–
–
100
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.34
0.89
0.38
–
V
GS
=10V,ꢀ
I
D
=3.8A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=3.8A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
7.5
–
Ω
f
=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
700
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
C
oss
46
Effective output capacitance,
energy related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
30
136
11
9
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…480V
Effective output capacitance,
time related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…480V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=4.8A,
R
G
=3.4
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=4.8A,
R
G
=3.4
Ω
;ꢀseeꢀtableꢀ9
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=4.8A,
R
G
=3.4
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
56
8
V
DD
=400V,ꢀ
V
GS
=13ꢀV,ꢀ
I
D
=4.8A,
R
G
=3.4
Ω
;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
4
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=480V,ꢀ
I
D
=4.8A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=480V,ꢀ
I
D
=4.8A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=480V,ꢀ
I
D
=4.8A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=480V,ꢀ
I
D
=4.8A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
16
Q
g
32
Gate plateau voltage
V
plateau
5.4
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ480V
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ480V
Final Data Sheet
5
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPAW60R380CE
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
–
V
V
GS
=0V,ꢀ
I
F
=4.8A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=4.8A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
–
–
–
290
3.3
21
–
–
–
ns
V
R
=400V,ꢀ
I
F
=4.8A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=400V,ꢀ
I
F
=4.8A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPAW60R380CE
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipationꢀ(FullꢀPAK)
Diagramꢀ2:ꢀSafeꢀoperatingꢀareaꢀ(FullꢀPAK)
35
10
2
1 µs
10 µs
100 µs
30
25
20
15
10
5
10
1
10
0
1 ms
10 ms
DC
10
-1
10
-2
10
-3
10
-4
0
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀareaꢀ(FullꢀPAK)
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(FullꢀPAK)
10
2
10
1
1 µs
10
1
10 µs
0.5
100 µs
1 ms
10
0
10
-1
10
-2
10
-3
10
-4
10
0
0.2
10 ms
0.1
DC
0.05
0.02
10
-1
0.01
single pulse
10
-2
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
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600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPAW60R380CE
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
30
20
20 V
20 V
10 V
10 V
25
8 V
8 V
15
10
5
20
7 V
7 V
15
6 V
5.5 V
6 V
10
5 V
5.5 V
5
4.5 V
5 V
4.5 V
0
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
1.50
1.40
1.30
1.05
0.85
0.65
5.5 V
7 V
5V
6.5 V
10 V
6 V
1.20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.45
98%
typ
0.25
0.05
0
5
10
15
20
25
-40
-15
10
35
60
85
110
135
160
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=3.8ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
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2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPAW60R380CE
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
30
10
25 °C
9
8
25
20
120 V
480 V
7
6
5
4
3
2
1
0
150 °C
15
10
5
0
0
2
4
6
8
10
12
0
10
20
30
40
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=4.8ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
2
250
25 °C
125 °C
200
150
100
50
10
1
10
0
10
-1
0
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=1.8A;ꢀ
V
DD
=50ꢀV
Final Data Sheet
9
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPAW60R380CE
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
700
10
4
680
660
640
620
600
580
560
540
520
10
3
Ciss
10
2
Coss
10
1
Crss
10
0
-40
-15
10
35
60
85
110 135 160
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=0.25ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
4
3
2
1
0
0
100
200
300
400
500
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
10
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPAW60R380CE
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
V
DS
R
g
1
V
D
S
(
p
ea
k
)
V
DS
t
rr
V
DS
I
F
t
F
t
S
d
I
F
/ dt
R
g
2
I
F
t
1
0
%
I
rrm
Q
F
Q
S
I
F
dI /
dt
rr
t
rr
=
t
F
+t
S
rr
I
rrm
Q
=
Q
F
+
Q
S
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
11
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPAW60R380CE
6ꢀꢀꢀꢀꢀPackageꢀOutlines
E
A
A1
P
b3
b2
b5
A2
b
0.381
B A
c
e
DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS
DOCUMENT NO.
Z8B00176938
MILLIMETERS
INCHES
DIM
MIN
4.50
2.34
2.65
0.75
0.98
1.00
3.00
0.40
15.47
MAX
4.90
2.74
2.95
0.90
1.26
1.40
–
MIN
MAX
SCALE
A
A1
A2
b
0.177
0.092
0.104
0.030
0.039
0.039
0.118
0.016
0.609
0.193
0.108
0.116
0.035
0.050
0.055
–
0
2
0
2
b2
b3
b5
c
4 mm
0.60
0.024
0.641
EUROPEAN PROJECTION
D
16.27
11.30
D1
E
9.17
0.361
10.70
0.421
0.445
4.25 (BSC)
3
0.167 (BSC)
3
e
N
H
28.25
12.58
1.70
29.45
13.38
2.30
1.112
0.495
0.067
0.118
0.122
1.159
0.527
0.091
0.130
0.138
ISSUE DATE
28-04-2015
L
L1
¡3
Q
REVISION
01
3.00
3.30
3.10
3.50
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPGꢀ-ꢀTO220ꢀFullPAKꢀWideCreepage,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPAW60R380CE
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
13
2016-03-31
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPAW60R380CE
RevisionꢀHistory
IPAW60R380CE
Revision:ꢀ2016-03-31
Previous Revision
Date
Subjects (major changes since last revision)
Release of final version
2015-10-07
2016-03-31
Modified Id Ratings
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
14
2016-03-31
