Infineon-Technologies-IPB009N03L-G
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IPB009N03LꢀG
MOSFET
OptiMOS
ª
3ꢀPower-Transistor,ꢀ30ꢀV
D²-PAKꢀ7pin
Features
•ꢀMOSFETꢀforꢀORingꢀandꢀUninterruptibleꢀPowerꢀSupply
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
1)
ꢀꢀforꢀtargetꢀapplications
•ꢀN-channel
tab
•ꢀLogicꢀlevel
•ꢀUltra-lowꢀon-resistanceꢀ
R
DS(on)
•ꢀ100%ꢀAvalancheꢀtested
1
7
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Drain
Pin 4, tab
Parameter
Value
Unit
V
DS
30
V
Gate
Pin 1
R
DS(on),max
I
D
0.95
180
m
Ω
A
Source
Pin 2,3,5,6,7
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPB009N03L G
PG-TO263-7
009N03L
–
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2016-04-21
OptiMOS
ª
3ꢀPower-Transistor,ꢀ30ꢀV
IPB009N03LꢀG
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2016-04-21
OptiMOS
ª
3ꢀPower-Transistor,ꢀ30ꢀV
IPB009N03LꢀG
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
A
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
–
–
–
–
180
180
180
180
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=4.5ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=4.5ꢀV,ꢀ
T
C
=100ꢀ°C
Continuous drain current
I
D
A
Pulsed drain current
1)
Avalanche current, single pulse
2)
I
D,pulse
I
AS
–
–
–
–
–
–
1260
100
A
T
C
=25ꢀ°C
A
T
C
=25ꢀ°C
Avalanche energy, single pulse
E
AS
610
mJ
I
D
=100ꢀA,ꢀ
R
GS
=25ꢀ
Ω
I
D
=180ꢀA,ꢀ
V
DS
=24ꢀV,ꢀd
i
/d
t
=200ꢀA/µs,
T
j,max
=175ꢀ°C
Reverseꢀdiodeꢀd
v
/d
t
d
v
/d
t
–
–
6
kV/µs
Gate source voltage
Power dissipation
V
GS
P
tot
-20
–
–
–
20
V
–
250
W
T
C
=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case
R
thJC
R
thJA
–
0.6
K/W
K/W
–
–
SMD version, device on PCB,
minimal footprint
–
–
–
–
62
40
SMD version, device on PCB,
6 cm² cooling area
3)
R
thJA
K/W
–
1)
See Diagram 3 for more detailed information
2)
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2016-04-21
OptiMOS
ª
3ꢀPower-Transistor,ꢀ30ꢀV
IPB009N03LꢀG
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
30
1
Typ.
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
–
–
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
2.2
V
DS
=
V
GS
,ꢀ
I
D
=250ꢀµA
–
–
0.1
20
2
200
V
DS
=30ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=30ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
10
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
0.95
0.7
1.3
0.95
V
GS
=4.5ꢀV,ꢀ
I
D
=100ꢀA
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA
R
DS(on)
m
Ω
Gate resistance
R
G
g
fs
–
1.5
–
–
Ω
–
Transconductance
180
370
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=100ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
C
iss
C
oss
C
rss
–
–
–
19000 25000 pF
5700 7600 pF
V
GS
=0ꢀV,ꢀ
V
DS
=15ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=15ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=15ꢀV,ꢀ
f
=1ꢀMHz
Output capacitance
Reverse transfer capacitance
360
26
–
–
pF
ns
V
DD
=15ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
V
DD
=15ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=1.6ꢀ
Ω
14
–
–
–
ns
ns
ns
V
DD
=15ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-off delay time
Fall time
103
22
V
DD
=15ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=1.6ꢀ
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
1)
ꢀ
Values
Typ.
50
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q
gs
–
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=15ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
Q
g(th)
Q
gd
28
–
24
–
Q
sw
46
–
Gate charge total
Q
g
110
2.9
146
Gate plateau voltage
Gate charge total
V
plateau
Q
g
–
–
–
–
227
95
nC
nC
nC
Gate charge total, sync. FET
Output charge
Q
g(sync)
Q
oss
148
V
DD
=15ꢀV,ꢀ
V
GS
=0ꢀV
1)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2016-04-21
OptiMOS
ª
3ꢀPower-Transistor,ꢀ30ꢀV
IPB009N03LꢀG
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
180
1260
1
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
Q
rr
–
A
T
C
=25ꢀ°C
Diode forward voltage
0.82
135
V
V
GS
=0ꢀV,ꢀ
I
F
=100ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=15ꢀV,ꢀ
I
F
=
I
S
,ꢀd
i
F
/d
t
=400ꢀA/µs
Reverse recovery charge
–
nC
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2016-04-21
OptiMOS
ª
3ꢀPower-Transistor,ꢀ30ꢀV
IPB009N03LꢀG
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
300
200
250
200
150
100
50
160
120
80
40
0
0
0
50
100
150
200
0
50
100
150
200
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
4
10
0
0.5
1 µs
10
3
10 µs
100 µs
0.2
10
-1
0.1
10
2
0.05
0.02
DC
1 ms
10
-2
0.01
10 ms
10
1
single pulse
10
0
10
-1
10
-3
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2016-04-21
OptiMOS
ª
3ꢀPower-Transistor,ꢀ30ꢀV
IPB009N03LꢀG
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1000
2.0
5 V
10 V
3.2 V
4.5 V
800
600
400
200
0
1.6
3.5 V
4 V
1.2
0.8
0.4
0.0
4 V
4.5 V
6 V
10 V
5 V
3.5 V
3.2 V
3 V
2.8 V
0
1
2
3
0
40
80
120
160
200
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
1000
500
800
600
400
400
300
200
100
0
200
175 °C
25 °C
0
0
1
2
3
4
5
0
40
80
120
160
200
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2016-04-21
OptiMOS
ª
3ꢀPower-Transistor,ꢀ30ꢀV
IPB009N03LꢀG
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
1.80
2.5
1.60
1.40
1.20
2.0
1.5
1.0
0.5
0.0
98 %
1.00
0.80
typ
0.60
0.40
0.20
0.00
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=100ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
;ꢀ
I
D
=1ꢀmA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
5
10
4
25 °C
175 °C
25 °C, 98%
175 °C, 98%
10
3
10
2
10
1
10
0
Ciss
10
4
10
3
10
2
Coss
Crss
0
10
20
30
0.0
0.5
1.0
1.5
2.0
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2016-04-21
OptiMOS
ª
3ꢀPower-Transistor,ꢀ30ꢀV
IPB009N03LꢀG
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
3
12
15 V
6 V
10
8
24 V
10
2
25 °C
150 °C
100 °C
6
10
1
4
2
10
0
0
10
0
10
1
10
2
10
3
0
50
100
150
200
250
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=100ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
34
33
32
31
30
29
28
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2016-04-21
OptiMOS
ª
3ꢀPower-Transistor,ꢀ30ꢀV
IPB009N03LꢀG
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-7,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2016-04-21
OptiMOS
ª
3ꢀPower-Transistor,ꢀ30ꢀV
IPB009N03LꢀG
RevisionꢀHistory
IPB009N03L G
Revision:ꢀ2016-04-21,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2016-04-21
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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©ꢀ2016ꢀInfineonꢀTechnologiesꢀAG
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Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2016-04-21
