Infineon-Technologies-IPB015N08N5
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MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
OptiMOS
TM
OptiMOS
™
ꢀꢀ5ꢀPower-Transistor,ꢀ80ꢀV
IPB015N08N5
DataꢀSheet
Rev.ꢀ2.1
Final
PowerꢀManagementꢀ&ꢀMultimarket
OptiMOS
ª
ꢀꢀ5ꢀPower-Transistor,ꢀ80ꢀV
IPB015N08N5
D²-PAKꢀ7pin
1ꢀꢀꢀꢀꢀDescription
Features
•ꢀIdealꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsync.ꢀrec.
•ꢀOptimizedꢀtechnologyꢀforꢀDC/DCꢀconverters
•ꢀExcellentꢀgateꢀchargeꢀxꢀ
R
DS(on)
ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀꢀR
DS(on)
tab
1
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀ100%ꢀavalancheꢀtested
7
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
1)
ꢀꢀforꢀtargetꢀapplications
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Drain
Pin 4, tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
Gate
Pin 1
V
DS
80
V
Source
Pin 2,3,5,6,7
R
DS(on),max
I
D
1.5
m
Ω
A
180
207
178
Q
oss
nC
nC
Q
G
(0V..10V)
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPB015N08N5
PG-TO263-7
015N08N5
–
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2015-10-15
OptiMOS
ª
ꢀꢀ5ꢀPower-Transistor,ꢀ80ꢀV
IPB015N08N5
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2015-10-15
OptiMOS
ª
ꢀꢀ5ꢀPower-Transistor,ꢀ80ꢀV
IPB015N08N5
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
A
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
–
–
–
–
180
180
T
C
=25ꢀ°C
A
Continuous drain current
I
D
T
C
=100ꢀ°C
Pulsed drain current
1)
Avalanche energy, single pulse
2)
Gate source voltage
I
D,pulse
E
AS
–
–
–
–
–
720
A
T
C
=25ꢀ°C
–
1230 mJ
I
D
=100ꢀA,ꢀ
R
GS
=25ꢀ
Ω
V
GS
P
tot
-20
–
20
V
–
Power dissipation
375
W
T
C
=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
175
°C
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
0.3
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case
R
thJC
R
thJA
–
0.4
K/W
K/W
–
–
Thermal resistance, junction – ambient,
minimal footprint
–
–
–
–
–
–
62
Thermal resistance, junction – ambient,
6 cm
2
cooling area
3)
R
thJA
T
sold
40
K/W
°C
–
Soldering temperature and reflow
soldering is allowed
260
Reflow MSL1
1)
See Diagram 3 for more detailed information
2)
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2015-10-15
OptiMOS
ª
ꢀꢀ5ꢀPower-Transistor,ꢀ80ꢀV
IPB015N08N5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
80
Typ.
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
–
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
2.2
3
3.8
V
DS
=
V
GS
,ꢀ
I
D
=279ꢀµA
–
–
0.1
10
1
100
V
DS
=80ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=80ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
1
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
1.1
1.5
1.5
1.8
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA
V
GS
=6ꢀV,ꢀ
I
D
=50ꢀA
R
DS(on)
m
Ω
Gate resistance
1)
Transconductance
R
G
g
fs
–
1.5
2.3
–
Ω
–
123
245
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=100ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
1)
ꢀ
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
C
iss
C
oss
C
rss
–
–
–
13000 16900 pF
2000 2600 pF
V
GS
=0ꢀV,ꢀ
V
DS
=40ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=40ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=40ꢀV,ꢀ
f
=1ꢀMHz
Output capacitance
Reverse transfer capacitance
86
33
150
–
pF
ns
V
DD
=40ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
V
DD
=40ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=1.6ꢀ
Ω
32
83
28
–
–
–
ns
ns
ns
V
DD
=40ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-off delay time
Fall time
V
DD
=40ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=1.6ꢀ
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
2)
ꢀ
Values
Typ.
56
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
1)
Switching charge
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
nC
V
V
DD
=40ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=40ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=40ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=40ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=40ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
Q
gd
37
56
Q
sw
58
–
Gate charge total
1)
Q
g
178
4.5
222
Gate plateau voltage
Gate charge total, sync. FET
Output charge
1)
V
plateau
Q
g(sync)
Q
oss
–
153
207
–
nC
nC
276
V
DD
=40ꢀV,ꢀ
V
GS
=0ꢀV
1)
Defined by design. Not subject to production test.
2)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2015-10-15
OptiMOS
ª
ꢀꢀ5ꢀPower-Transistor,ꢀ80ꢀV
IPB015N08N5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
–
Max.
180
720
1.2
Diode continous forward current
Diode pulse current
I
S
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
t
rr
–
A
T
C
=25ꢀ°C
Diode forward voltage
0.86
94
V
V
GS
=0ꢀV,ꢀ
I
F
=100ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=40ꢀV,ꢀ
I
F
=100ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
V
R
=40ꢀV,ꢀ
I
F
=100ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
Reverse recovery time
1)
Reverse recovery charge
1)
188
492
ns
nC
Q
rr
246
1)
Defined by design. Not subject to production test.
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2015-10-15
OptiMOS
ª
ꢀꢀ5ꢀPower-Transistor,ꢀ80ꢀV
IPB015N08N5
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
400
200
180
160
140
120
100
80
350
300
250
200
150
100
50
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
0
1 µs
10 µs
100 µs
1 ms
10
2
10
1
10
0
10
-1
0.5
10 ms
10
-1
0.2
DC
0.1
0.05
0.02
0.01
single pulse
10
-2
10
-1
10
0
10
1
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2015-10-15
OptiMOS
ª
ꢀꢀ5ꢀPower-Transistor,ꢀ80ꢀV
IPB015N08N5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
720
5
6 V
5.5 V
7 V
5 V
10 V
4.5 V
680
640
600
560
520
480
440
400
360
320
280
240
200
160
120
80
4
3
2
1
0
5.5 V
5 V
6 V
7 V
10 V
4.5 V
40
0
0
1
2
3
4
5
0
50
100 150 200 250 300 350 400 450
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
300
300
250
200
150
250
200
150
100
50
100
150 °C
25 °C
50
0
0
0
2
4
6
8
0
40
80
120
160
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2015-10-15
OptiMOS
ª
ꢀꢀ5ꢀPower-Transistor,ꢀ80ꢀV
IPB015N08N5
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
4
4.0
3.5
2790 µA
3
3.0
279 µA
2.5
2
2.0
1.5
1.0
0.5
0.0
max
typ
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=100ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
;ꢀparameter:ꢀ
I
D
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
5
10
3
25 °C
175 °C
25 °C, max
175 °C, max
Ciss
10
4
10
3
10
2
10
1
10
2
10
1
10
0
Coss
Crss
0
20
40
60
80
0.0
0.5
1.0
1.5
2.0
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2015-10-15
OptiMOS
ª
ꢀꢀ5ꢀPower-Transistor,ꢀ80ꢀV
IPB015N08N5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
3
10
8
25 °C
40 V
10
2
10
1
10
0
6
100 °C
150 °C
60 V
20 V
4
2
0
10
0
10
1
10
2
10
3
0
50
100
150
200
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=100ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
90
85
80
75
70
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2015-10-15
OptiMOS
ª
ꢀꢀ5ꢀPower-Transistor,ꢀ80ꢀV
IPB015N08N5
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-7,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2015-10-15
OptiMOS
ª
ꢀꢀ5ꢀPower-Transistor,ꢀ80ꢀV
IPB015N08N5
RevisionꢀHistory
IPB015N08N5
Revision:ꢀ2015-10-15,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
Update package Outline
2014-12-11
2015-10-15
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Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2015-10-15
