Infineon-Technologies-IPB027N10N3-G
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IPB027N10N3 G
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3 Power-Transistor
Product Summary
Features
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Value
Parameter
Symbol Conditions
Unit
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Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
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IPB027N10N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
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IPB027N10N3 G
1 Power dissipation
2 Drain current
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300
250
200
150
100
50
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120
100
80
60
40
20
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50
100
150
200
0
50
100
150
200
T
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[°C]
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[°C]
3 Safe operating area
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10
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10
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10
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10
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t
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IPB027N10N3 G
5 Typ. output characteristics
I
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9
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150
100
50
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.
(
0
0
0
0
1
2
40
80
I
D
[A]
120
160
V
DS
[V]
7 Typ. transfer characteristics
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V
9H
g5*g
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R
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8 Typ. forward transconductance
g
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T
V
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Tꢈ
300
250
200
150
100
50
240
200
160
120
80
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Tꢈ
40
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ꢇ
Tꢈ
0
0
0
2
4
6
0
40
80
120
160
V
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IPB027N10N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
=H”`T#
4R”
T
V
ꢄꢉ
V
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4
V
9H
R
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T
V
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6
5
4
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3
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3
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1.5
1
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
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20
40
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80
0.5
1
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2
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IPB027N10N3 G
13 Avalanche characteristics
6H
4R”
t
6J
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R
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14 Typ. gate charge
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10
1
1
0
0
10
100
1000
40
80
Q
gate
[nC]
120
160
t
AV
[µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
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V
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V
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g
105
100
95
V
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S
P
Q
g
ate
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S
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90
-60
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20
60
100
140
180
T
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IPB027N10N3 G
PG-TO263-3: Outline
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IPB027N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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