Infineon-Technologies-IPB031NE7N3-G
| Part # | Infineon-Technologies-IPB031NE7N3-G |
Download  | Infineon-Technologies-IPB031NE7N3-G |
IPB031NE7N3 G
“%&$
!”#
TM
3 Power-Transistor
Product Summary
Features
V
9H
/-
+&)
)((
J
Q
(
@D9=9J54
D53
8>?
<?
7I
6?
B
CI>3
8B?
>?
EC
B53
D9693
1D9?
>
Q
#451<
6?
B
8978
6B5AE5>3
I
CG9D3
89>7
1>4
ꢀ
ꢁ
ꢂꢀ
ꢁ
3
?
>F5BD5BC
Q
ꢃ
H3
5<<5>D
71D5
3
81B75
H
R
9H”[Z#
@B?
4E3
D
ꢄ
(
&
ꢅ
Q
.5BI
<?
G
?
>ꢆB5C9CD1>3
5
+
9H”[Z#
R
9H”[Z#$YMd
I
9
Y
“
6
Q
‘
ꢆ3
81>>5<ꢇ
>?
B=1<
<5F5<
Q
ꢈ
ꢉ
ꢉ
ꢊ
1F1<1>3
85
D5CD54
Q
)2
ꢆ6B55
@<1D9>7ꢋ
+
?
“
,
3
?
=@<91>D
Q
*
E1<96954
13
3
?
B49>7
D?
$
ꢃ
ꢀ
ꢃ
ꢁ
)#
6?
B
D1B75D
1@@<93
1D9?
>C
Q
“
1<?
75>ꢆ6B55
13
3
?
B49>7
D?
#ꢃ
ꢁ
ꢌ
ꢈ
ꢍ
ꢎ
ꢏ
ꢆꢍ
ꢆꢍ
ꢈ
Type
#)ꢗ
ꢉ
ꢖ
ꢈ
‘
ꢃ
ꢓ
‘
ꢖ
!
Package
Marking
E=%ID*.+%+
(+)C;/C
Maximum ratings,
1D
T
V
ꢐ
ꢍ
ꢑ
Tꢁ
ꢇ
E><5CC
?
D85BG9C5
C@53
96954
Value
Parameter
Symbol Conditions
Unit
T
8
ꢐ
ꢍ
ꢑ
Tꢁ
*#
I
9
ꢁ
?
>D9>E?
EC
4B19>
3
EBB5>D
)((
)((
6
T
8
ꢐ
ꢈ
ꢉ
ꢉ
Tꢁ
)E<C54
4B19>
3
EBB5>D
*#
I
9$aX_Q
E
6H
T
8
ꢐ
ꢍ
ꢑ
Tꢁ
I
9
ꢐ
ꢓ
ꢎ
ꢒ
ꢇ
R
=H
ꢐ
ꢍ
ꢑ
”
,((
ꢒ
F1<1>3
85
5>5B7Iꢇ
C9>7<5
@E<C5
+#
!1D5
C?
EB3
5
F?
<D175
.,(
Y@
J
V
=H
q*(
P
`[`
T
8
ꢐ
ꢍ
ꢑ
Tꢁ
)?
G5B
49CC9@1D9?
>
*),
K
Tꢁ
T
V
ꢇ
T
_`S
(
@5B1D9>7
1>4
CD?
B175
D5=@5B1DEB5
#ꢃ
ꢁ
3
<9=1D93
3
1D57?
BIꢋ
ꢀ
#’
#ꢃ
ꢁ
ꢌ
ꢕ
ꢆꢈ
ꢆꢑ
ꢑ
ꢔꢔꢔ
ꢈ
ꢓ
ꢑ
ꢑ
ꢑ
ꢂꢈ
ꢓ
ꢑ
ꢂꢑ
ꢌ
)#
$
ꢆ,-ꢀ
ꢍ
ꢉ
1>4
$
ꢃ
,ꢀ
ꢍ
ꢍ
*#
,55
697EB5
ꢖ
6?
B
=?
B5
45D19<54
9>6?
B=1D9?
>
+#
,55
697EB5
ꢈ
ꢖ
6?
B
=?
B5
45D19<54
9>6?
B=1D9?
Z
+
5Fꢔ
ꢍ
ꢔꢍ
@175
ꢈ
ꢍ
ꢉ
ꢉ
ꢏ
ꢆꢈ
ꢍ
ꢆꢈ
ꢌ
IPB031NE7N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R
`T@8
-85B=1<
B5C9CD1>3
5ꢇ
:E>3
D9?
>
ꢆ
3
1C5
-85B=1<
B5C9CD1>3
5ꢇ
%
ꢆ
%
%
ꢆ
%
(&/
ꢌ
ꢍ
,(
A’K
R
`T@6
=9>9=1<
6?
?
D@B9>D
ꢌ
3
=
*
3
?
?
<9>7
1B51
,#
:E>3
D9?
>
ꢆ
1=2
95>D
Electrical characteristics,
1D
T
V
ꢐ
ꢍ
ꢑ
Tꢁ
ꢇ
E><5CC
?
D85BG9C5
C@53
96954
Static characteristics
V
“7G#9HH
V
=H”`T#
V
V
=H
ꢐ
ꢉ
.ꢇ
I
9
ꢐ
ꢈ
=ꢒ
ꢀ
B19>ꢆC?
EB3
5
2
B51;4?
G>
F?
<D175
!1D5
D8B5C8?
<4
F?
<D175
/-
%
%
J
9H
4
V
=H
ꢇ
I
9
ꢐ
ꢈ
ꢑ
ꢑ
V
ꢒ
*&+
+&)
+&0
V
9H
ꢐ
ꢓ
ꢑ
.ꢇ
V
=H
ꢐ
ꢉ
.ꢇ
I
9HH
05B?
71D5
F?
<D175
4B19>
3
EBB5>D
%
%
(&)
)(
)
r6
T
V
ꢐ
ꢍ
ꢑ
Tꢁ
V
9H
ꢐ
ꢓ
ꢑ
.ꢇ
V
=H
ꢐ
ꢉ
.ꢇ
)((
T
V
ꢐ
ꢈ
ꢍ
ꢑ
Tꢁ
I
=HH
V
V
=H
ꢐ
ꢍ
ꢉ
.ꢇ
V
9H
ꢐ
ꢉ
.
=H
ꢐ
ꢈ
ꢉ
.ꢇ
I
9
ꢐ
ꢈ
ꢉ
ꢉ
ꢒ
!1D5ꢆC?
EB3
5
<51;175
3
EBB5>D
ꢀ
B19>ꢆC?
EB3
5
?
>ꢆCD1D5
B5C9CD1>3
5
!1D5
B5C9CD1>3
5
%
%
%
)
)(( Z6
R
9H”[Z#
R
=
*&/
)&1
+&)
%
Y
”
“
g
V
9H
g5*g
I
9
g
R
9H”[Z#YMd
ꢇ
I
9
ꢐ
ꢈ
ꢉ
ꢉ
ꢒ
g
R_
I^MZ_O[ZPaO`MZOQ
/-
)-(
%
H
*
,#
ꢀ
5F93
5
?
>
ꢎ
ꢉ
==
H
ꢎ
ꢉ
==
H
ꢈ
ꢔꢑ
==
5@?
HI
)ꢁ
ꢗ
+
ꢎ
G9D8
ꢌ
3
=
ꢄ?
>5
<1I5Bꢇ
ꢓ
ꢉ
V
=
D893
;ꢅ
3
?
@@5B
1B51
6?
B
4B19>
3
?
>>53
D9?
>ꢔ
)ꢁ
ꢗ
9C
F5BD93
1<
9>
CD9<<
19Bꢔ
+
5Fꢔ
ꢍ
ꢔꢍ
@175
ꢍ
ꢍ
ꢉ
ꢉ
ꢏ
ꢆꢈ
ꢍ
ꢆꢈ
ꢌ
IPB031NE7N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
#>@ED
3
1@13
9D1>3
5
(
ED@ED
3
1@13
9D1>3
5
+
5F5BC5
DB1>C65B
3
1@13
9D1>3
5
-EB>ꢆ?
>
45<1I
D9=5
+
9C5
D9=5
C
U__
%
%
%
%
%
%
%
.))(
)+0(
..
0)+( <
)0,(
V
=H
ꢐ
ꢉ
.ꢇ
V
9H
ꢐ
ꢖ
ꢓ
ꢔꢑ
.ꢇ
C
[__
C
^__
t
P”[Z#
t
^
f
ꢐ
ꢈ
&
“
J
11
).
%
%
%
%
Z_
V
V
99
ꢐ
ꢖ
ꢓ
ꢔꢑ
.ꢇ
0-
=H
ꢐ
ꢈ
ꢉ
.ꢇ
I
9
ꢐ
ꢈ
ꢉ
ꢉ
ꢒ
ꢇ
t
P”[RR#
t
R
-EB>ꢆ?
66
45<1I
D9=5
1<<
D9=5
,(
R
=
ꢐ
ꢈ
ꢔꢌ
”
)(
!1D5
ꢁ
81B
S
5
ꢁ
81B13
D5B9CD93
C
-#
!1D5
D?
C?
EB3
5
3
81B75
!1D5
D?
4B19>
3
81B75
,G9D3
89>7
3
81B75
Q
S_
%
%
%
%
%
%
+*
)0
+)
00
-&+
1)
%
Z8
Q
SP
%
V
99
ꢐ
ꢖ
ꢓ
ꢔꢑ
.ꢇ
I
9
ꢐ
ꢈ
ꢉ
ꢉ
ꢒ
ꢇ
Q
_c
Q
S
%
))/
%
V
=H
ꢐ
ꢉ
D?
ꢈ
ꢉ
.
!1D5
3
81B75
D?
D1<
V
XM`QMa
Q
[__
!1D5
@<1D51E
F?
<D175
(
ED@ED
3
81B75
J
V
99
ꢐ
ꢖ
ꢓ
ꢔꢑ
.ꢇ
V
=H
ꢐ
ꢉ
.
)*) Z8
Reverse Diode
I
H
ꢀ
9?
45
3
?
>D9>?
EC
6?
BG1B4
3
EBB5>D
ꢀ
9?
45
@E<C5
3
EBB5>D
%
%
%
%
)((
,((
6
J
T
8
ꢐ
ꢍ
ꢑ
Tꢁ
I
H$aX_Q
V
=H
ꢐ
ꢉ
.ꢇ
I
<
ꢐ
ꢈ
ꢉ
ꢉ
ꢒ
ꢇ
V
H9
ꢀ
9?
45
6?
BG1B4
F?
<D175
%
)&(
)&*
T
V
ꢐ
ꢍ
ꢑ
Tꢁ
t
^^
+
5F5BC5
B53
?
F5BI
D9=5
%
%
-(
/.
%
%
Z_
V
G
ꢐ
ꢖ
ꢓ
ꢔꢑ
.ꢇ
I
<
4
I
H
ꢇ
P
i
<
‘P
t
ꢐ
ꢈ
ꢉ
ꢉ
ꢒ
ꢂV
C
Q
^^
+
5F5BC5
B53
?
F5BI
3
81B75
Z8
-#
,55
697EB5
ꢈ
ꢌ
6?
B
71D5
3
81B75
@1B1=5D5B
4569>9D9?
>
+
5Fꢔ
ꢍ
ꢔꢍ
@175
ꢖ
ꢍ
ꢉ
ꢉ
ꢏ
ꢆꢈ
ꢍ
ꢆꢈ
ꢌ
IPB031NE7N3 G
1 Power dissipation
2 Drain current
P
`[`
4R”
T
8
#
I
9
4R”
T
8
ꢅꢋ
V
=H
“
ꢈ
ꢉ
.
250
120
100
80
60
40
20
0
200
150
100
50
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
9
4R”
V
9H
ꢅꢋ
T
8
ꢐ
ꢍ
ꢑ
Tꢁ
ꢋ
D
4(
@1B1=5D5Bꢘ
t
4 Max. transient thermal impedance
`T@8
4R”
t
#
Z
@1B1=5D5Bꢘ
D
4
t
‘
T
10
3
10
0
<9=9D54
2
I
?
>ꢆCD1D5
ꢈ
V
C
^Q_U_`MZOQ
ꢈ
ꢉ
V
C
(&-
(&*
ꢈ
ꢉ
ꢉ
V
C
10
2
10
1
10
0
ꢈ
=C
10
-1
(&)
ꢈ
ꢉ
=C
98
(&(-
(&(*
(&()
C9>7<5
@E<C5
10
-2
10
-1
10
0
10
1
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
+
5Fꢔ
ꢍ
ꢔꢍ
@175
ꢎ
ꢍ
ꢉ
ꢉ
ꢏ
ꢆꢈ
ꢍ
ꢆꢈ
ꢌ
IPB031NE7N3 G
5 Typ. output characteristics
I
9
4R”
V
9H
ꢅꢋ
T
V
ꢐ
ꢍ
ꢑ
Tꢁ
6 Typ. drain-source on resistance
9H”[Z#
4R”
I
9
ꢅꢋ
T
V
ꢐ
ꢍ
ꢑ
Tꢁ
R
@1B1=5D5Bꢘ
V
=H
@1B1=5D5Bꢘ
V
=H
400
8
ꢓ
.
ꢈ
ꢉ
.
ꢌ
.
ꢑ
ꢔꢑ
.
ꢑ
.
350
300
250
200
150
100
50
7
6
5
4
3
2
1
ꢌ
.
ꢓ
.
ꢈ
ꢉ
.
ꢑ
ꢔꢑ
.
ꢑ
.
ꢎ
ꢔꢑ
.
0
0
0
0
1
2
3
4
5
100
200
300
400
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
9
4R”
V
=H
ꢅꢋ
K
V
9H
g5*g
I
9
g
R
9H”[Z#YMd
@1B1=5D5Bꢘ
T
V
8 Typ. forward transconductance
g
R_
4R”
I
9
ꢅꢋ
T
V
ꢐ
ꢍ
ꢑ
Tꢁ
400
350
300
250
200
150
100
200
150
100
50
50
ꢈ
ꢓ
ꢑ
Tꢁ
ꢍ
ꢑ
Tꢁ
0
0
0
2
4
6
8
0
50
100
150
V
GS
[V]
I
D
[A]
+
5Fꢔ
ꢍ
ꢔꢍ
@175
ꢑ
ꢍ
ꢉ
ꢉ
ꢏ
ꢆꢈ
ꢍ
ꢆꢈ
ꢌ
IPB031NE7N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
=H”`T#
4R”
T
V
ꢅꢋ
V
=H
4
V
9H
R
9H”[Z#
4R”
T
V
ꢅꢋ
I
9
ꢐ
ꢈ
ꢉ
ꢉ
ꢒ
ꢋ
V
=H
ꢐ
ꢈ
ꢉ
.
V
@1B1=5D5Bꢘ
I
9
8
7
6
5
4
3.5
3
ꢈ
ꢑ
ꢑ
ꢉ
V
ꢒ
ꢈ
ꢑ
ꢑ
V
ꢒ
2.5
2
4
YMd
`e
3
1.5
1
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T
j
[°C]
100
140
180
T
j
[°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I
<
4R”
V
H9
C
4R”
V
9H
ꢅꢋ
V
=H
ꢐ
ꢉ
.ꢋ
f
ꢐ
ꢈ
&
“
J
#
@1B1=5D5Bꢘ
T
V
10
5
10
3
10
4
ꢈ
ꢓ
ꢑ
Tꢁ
ꢇ
=1H
8U__
ꢍ
ꢑ
Tꢁ
10
2
ꢈ
ꢓ
ꢑ
Tꢁ
8[__
10
3
ꢍ
ꢑ
Tꢁ
ꢇ
=1H
10
1
8^__
10
2
10
0
0
10
1
0.5
1
1.5
2
(
*(
,(
.(
0(
V
DS
[V]
V
SD
[V]
+
5Fꢔ
ꢍ
ꢔꢍ
@175
ꢌ
ꢍ
ꢉ
ꢉ
ꢏ
ꢆꢈ
ꢍ
ꢆꢈ
ꢌ
IPB031NE7N3 G
13 Avalanche characteristics
6H
4R”
t
6J
ꢅꢋ
R
=H
ꢐ
ꢍ
ꢑ
”
14 Typ. gate charge
=H
4R”
Q
SM`Q
ꢅꢋ
I
9
ꢐ
ꢈ
ꢉ
ꢉ
ꢒ
@E<C54
V
I
@1B1=5D5Bꢘ
T
V”_`M^`#
@1B1=5D5Bꢘ
V
99
1000
12
ꢎ
ꢉ
.
10
8
ꢍ
ꢉ
.
ꢌ
ꢉ
.
100
10
1
6
ꢍ
ꢑ
Tꢁ
ꢈ
ꢉ
ꢉ
Tꢁ
ꢈ
ꢑ
ꢉ
Tꢁ
4
2
0
0
0.1
1
10
100
1000
10000
20
40
60
80
100
t
AV
[µs]
Q
gate
[nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
7G”9HH#
4R”
T
V
ꢅꢋ
I
9
ꢐ
ꢈ
=ꢒ
90
V
=H
Q
g
80
70
60
V
S _”`T#
Q
S
“
`
T#
Q
_c
Q
S
P
Q
g
ate
Q
S
_
-60
-20
20
60
100
140
180
T
j
[°C]
+
5Fꢔ
ꢍ
ꢔꢍ
@175
ꢓ
ꢍ
ꢉ
ꢉ
ꢏ
ꢆꢈ
ꢍ
ꢆꢈ
ꢌ
IPB031NE7N3 G
PG-TO263-3 (D²-Pak)
+
5Fꢔ
ꢍ
ꢔꢍ
@175
ꢕ
ꢍ
ꢉ
ꢉ
ꢏ
ꢆꢈ
ꢍ
ꢆꢈ
ꢌ
IPB031NE7N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
+
5Fꢔ
ꢍ
ꢔꢍ
@175
ꢏ
ꢍ
ꢉ
ꢉ
ꢏ
ꢆꢈ
ꢍ
ꢆꢈ
ꢌ
