Infineon-Technologies-IPB039N10N3-G-E8187
| Part # | Infineon-Technologies-IPB039N10N3-G-E8187 |
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IPB039N10N3 G
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Unit
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1 Power dissipation
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9 Drain-source on-state resistance
10 Typ. gate threshold voltage
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11 Typ. capacitances
12 Forward characteristics of reverse diode
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13 Avalanche characteristics
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15 Drain-source breakdown voltage
16 Gate charge waveforms
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IPB039N10N3 G
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IPB039N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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