Infineon-Technologies-IPB054N08N3-G
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IPP057N08N3 G
IPI057N08N3 G
IPB054N08N3 G
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3 Power-Transistor
Product Summary
Features
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Value
Parameter
Symbol Conditions
Unit
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IPP057N08N3 G
IPI057N08N3 G
IPB054N08N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R
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IPP057N08N3 G
IPI057N08N3 G
IPB054N08N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
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IPP057N08N3 G
IPI057N08N3 G
IPB054N08N3 G
1 Power dissipation
2 Drain current
P
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#
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180
150
120
90
100
80
60
40
20
0
60
30
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
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4 Max. transient thermal impedance
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10
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10
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10
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10
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V
DS
[V]
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IPP057N08N3 G
IPI057N08N3 G
IPB054N08N3 G
5 Typ. output characteristics
I
9
4R”
V
9H
ꢄꢉ
T
V
ꢏ
ꢌ
ꢇ
Tꢈ
6 Typ. drain-source on resistance
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9
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T
V
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320
20
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280
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240
200
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8
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160
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120
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40
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0
0
0
0
1
2
3
4
5
40
80
120
160
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
9
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V
=H
ꢄꢉ
K
V
9H
g5*g
I
9
g
R
9H”[Z#YMd
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V
8 Typ. forward transconductance
g
R_
4R”
I
9
ꢄꢉ
T
V
ꢏ
ꢌ
ꢇ
Tꢈ
180
150
120
90
160
120
80
60
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ꢇ
Tꢈ
40
ꢌ
ꢇ
Tꢈ
30
0
0
0
2
4
6
8
0
40
80
120
160
V
GS
[V]
I
D
[A]
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IPP057N08N3 G
IPI057N08N3 G
IPB054N08N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
=H”`T#
4R”
T
V
ꢄꢉ
V
=H
4
V
9H
R
9H”[Z#
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T
V
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10
8
4
3
2
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6
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4
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I
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4R”
V
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C
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V
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V
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@1B1=5D5Bꢗ
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2
10
1
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10
1
10
0
0
0
20
40
60
80
0.5
1
1.5
2
V
DS
[V]
V
SD
[V]
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IPP057N08N3 G
IPI057N08N3 G
IPB054N08N3 G
13 Avalanche characteristics
6H
4R”
t
6J
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R
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14 Typ. gate charge
=H
4R”
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100
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6
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Tꢈ
4
2
1
0
0
0.1
1
10
100
1000
20
40
60
t
AV
[µs]
Q
gate
[nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
7G”9HH#
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T
V
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I
9
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90
85
80
75
70
65
60
V
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Q
g
V
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Q
S
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T#
Q
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Q
S
P
Q
g
ate
Q
S
_
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-20
20
60
100
140
180
T
j
[°C]
+
5Fꢓ
ꢅ
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ꢀꢐ
ꢅ
ꢀꢅ
ꢍ
IPP057N08N3 G
IPI057N08N3 G
IPB054N08N3 G
PG-TO263-3 (D²-Pak)
+
5Fꢓ
ꢅ
ꢓꢌ
@175
ꢒ
ꢌ
ꢐ
ꢅ
ꢐ
ꢀꢐ
ꢅ
ꢀꢅ
ꢍ
IPP057N08N3 G
IPI057N08N3 G
IPB054N08N3 G
PG-TO262-3 (I²-Pak)
+
5Fꢓ
ꢅ
ꢓꢌ
@175
ꢎ
ꢌ
ꢐ
ꢅ
ꢐ
ꢀꢐ
ꢅ
ꢀꢅ
ꢍ
IPP057N08N3 G
IPI057N08N3 G
IPB054N08N3 G
PG-TO220-3
+
5Fꢓ
ꢅ
ꢓꢌ
@175
ꢅ
ꢐ
ꢌ
ꢐ
ꢅ
ꢐ
ꢀꢐ
ꢅ
ꢀꢅ
ꢍ
IPP057N08N3 G
IPI057N08N3 G
IPB054N08N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
+
5Fꢓ
ꢅ
ꢓꢌ
@175
ꢅ
ꢅ
ꢌ
ꢐ
ꢅ
ꢐ
ꢀꢐ
ꢅ
ꢀꢅ
ꢍ
