Infineon-Technologies-IPB160N04S3-H2
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IPB160N04S3-H2
OptiMOS
®
-T
Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
40
2.1
160
V
m
Ω
A
Features
• N-channel – Enhancement mode
PG-TO263-7-3
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Marking
IPB160N04S3-H2
PG-TO263-7-3
3QN04H2
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T
C
=25°C,
V
GS
=10V
1)
I
D
Continuous drain current
160
157
A
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
I
D,pulse
E
AS
T
C
=25 °C
I
D
=80 A
640
898
Avalanche energy, single pulse
Gate source voltage
mJ
V
V
GS
±20
P
tot
T
C
=25 °C
Power dissipation
214
W
°C
T
j
,
T
stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 … +175
55/175/56
Rev. 1.0
page 1
2007-04-16
IPB160N04S3-H2
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
2)
R
thJC
R
thJA
Thermal resistance, junction – case
SMD version, device on PCB
–
–
–
–
–
–
0.7
62
40
K/W
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS(th)
V
V
GS
=0 V,
I
D
= 1 mA
Drain-source breakdown voltage
Gate threshold voltage
40
–
–
V
DS
=
V
GS
,
I
D
=150 µA
2.1
3.0
4.0
V
DS
=40 V,
V
GS
=0 V,
I
DSS
Zero gate voltage drain current
–
–
–
–
1
µA
T
j
=25 °C
V
DS
=40 V,
V
GS
=0 V,
100
T
j
=125 °C
2)
I
GSS
V
V
GS
=20 V,
V
DS
=0 V
GS
=10 V,
I
D
=80 A
Gate-source leakage current
–
–
–
100 nA
R
DS(on)
Drain-source on-state resistance
1.6
2.1
m
Ω
Rev. 1.0
page 2
2007-04-16
IPB160N04S3-H2
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
7400
2000
310
30
9600 pF
2600
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
465
–
–
–
–
ns
16
V
DD
=20 V,
V
GS
=10 V,
I
D
=80 A,
R
G
=3.3
Ω
t
d(off)
t
f
Turn-off delay time
Fall time
46
17
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
38
25
50
45
145
–
nC
Q
gd
V
V
DD
=32 V,
I
D
=80 A,
GS
=0 to 10 V
Q
g
110
5.2
V
plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
I
S
–
–
–
–
160
640
T
C
=25 °C
I
S,pulse
V
GS
=0 V,
I
F
=80 A,
V
SD
Diode forward voltage
–
0.85
1.3
V
T
j
=25 °C
Reverse recovery time
2)
Reverse recovery charge
2)
t
rr
–
–
60
95
–
–
ns
V
R
=20 V,
I
F
=50A,
d
i
F
/d
t
=100 A/µs
Q
rr
nC
1)
Current is limited by bondwire; with an
R
thJC
= 0.7 K/W the chip is able to carry 221 A at 25°C. For detailed
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2007-04-16
IPB160N04S3-H2
1 Power dissipation
2 Drain current
P
tot
= f(
T
C
);
V
GS
≥
6 V
I
D
= f(
T
C
);
V
GS
≥
6 V
250
180
160
140
120
100
80
200
150
100
50
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC
= f(
t
p
)
I
D
= f(
V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
Z
parameter:
D
=
t
p
/
T
10
0
1000
100
10
1 µs
0.5
10 µs
100 µs
10
-1
0.1
0.05
1 ms
0.01
10
-2
single pulse
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.1
1
10
100
t
p
[s]
V
DS
[V]
Rev. 1.0
page 4
2007-04-16
IPB160N04S3-H2
5 Typ. output characteristics
I
D
= f(
V
DS
);
T
j
= 25 °C
parameter:
V
GS
6 Typ. drain-source on-state resistance
DS(on)
= (
I
D
);
T
j
= 25 °C
R
parameter:
V
GS
14
10 V
6 V
5.5 V
6.5 V
7 V
600
7 V
12
10
8
500
400
300
200
100
0
6.5 V
6
6 V
4
5.5 V
5 V
2
10 V
0
0
100
200
300
D
[A]
400
500
600
0
2
4
6
V
DS
[V]
I
7 Typ. transfer characteristics
I
D
= f(
V
GS
);
V
DS
= 6V
parameter:
T
j
8 Typ. drain-source on-state resistance
R
DS(on)
= f(
T
j
);
I
D
= 80 A;
V
GS
= 10 V
3
600
500
400
300
2.5
2
200
1.5
1
175 °C
100
25 °C
-55 °C
0
-60
-20
20
60
T
j
[°C]
100
140
180
2
3
4
5
6
7
8
V
GS
[V]
Rev. 1.0
page 5
2007-04-16
IPB160N04S3-H2
9 Typ. gate threshold voltage
GS(th)
= f(
T
j
);
V
GS
=
V
DS
10 Typ. capacitances
V
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
parameter:
I
D
10
5
10
4
10
3
4
3.5
3
1500µA
Ciss
150µA
2.5
2
Coss
1.5
Crss
1
0
5
10
15
20
25
30
-60
-20
20
60
T
j
[°C]
100
140
180
V
DS
[V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
AS
= f(
t
AV
IF = f(V
SD
)
I
)
parameter:
T
j
parameter: T
j(start)
10
3
1000
10
2
100
10
25°C
100°C
150°C
25 °C
175 °C
10
1
10
0
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
V
SD
[V]
t
AV
[µs]
Rev. 1.0
page 6
2007-04-16
IPB160N04S3-H2
13 Typical avalanche energy
AS
= f(
T
j
)
14 Drain-source breakdown voltage
E
V
BR(DSS)
= f(
T
j
);
I
D
= 1 mA
parameter:
I
D
52
4000
3500
48
44
40
36
32
20 A
3000
2500
2000
40 A
1500
1000
80 A
500
0
-60
-20
20
60
100
140
180
25
75
125
175
T
j
[°C]
T
j
[°C]
15 Typ. gate charge
16 Gate charge waveforms
V
GS
= f(
Q
gate
);
I
D
= 80 A pulsed
parameter:
V
DD
12
V
GS
10
8
Q
g
8 V
32 V
6
4
Q
gate
2
Q
gd
Q
gs
0
0
20
40
60
80
100
120
Q
gate
[nC]
Rev. 1.0
page 7
2007-04-16
IPB160N04S3-H2
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2007
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non
‑
infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.0
page 8
2007-04-16
IPB160N04S3-H2
Revision History
Version
Date
Changes
Rev. 1.0
page 9
2007-04-16
