Infineon-Technologies-IPB180P04P4-03
| Part # | Infineon-Technologies-IPB180P04P4-03 |
Download  | Infineon-Technologies-IPB180P04P4-03 |
Final Data Sheet
IPB180P04P4-03
OptiMOS
®
-P2 Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
-40
2.8
V
m
W
A
-180
Features
• P-channel – Normal Level – Enhancement mode
PG-TO263-7-3
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Drain
Pin 4, Tab
Gate
Pin 1
Source
Pin 2, 3, 5, 6, 7
Type
Package
Marking
IPB180P04P4-03
PG-TO263-7-3
4QP0403
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T
C
=25°C,
V
GS
=-10V
Continuous drain current
1)
I
D
-180
-131
A
T
C
=100°C,
V
GS
=-10V
2)
Pulsed drain current
2)
I
D,pulse
E
AS
I
AS
T
C
=25°C
-720
90
I
D
=-90A
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
mJ
A
–
-180
V
GS
P
tot
–
±20
V
T
C
=25 °C
Power dissipation
150
W
°C
T
j
,
T
stg
–
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
–
–
-55 … +175
55/175/56
Rev. 1.1
page 1
2018-01-18
Final Data Sheet
Conditions
IPB180P04P4-03
Values
Parameter
Symbol
Unit
min.
typ.
max.
Thermal characteristics
2)
R
thJC
R
thJA
R
thJA
Thermal resistance, junction – case
–
–
–
–
–
–
1.0
62
K/W
Thermal resistance, junction –
ambient, leaded
SMD version, device on PCB
minimal footprint
–
–
–
–
62
40
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0V,
I
D
= -1mA
V
GS(th)
V
DS
=
V
GS
,
I
D
=-410µA
Drain-source breakdown voltage
Gate threshold voltage
-40
–
–
V
-2.0
-3.0
-4.0
V
DS
=-32V,
V
GS
=0V,
T
j
=25°C
I
DSS
Zero gate voltage drain current
–
–
-0.1
-20
-1
µA
V
DS
=-32V,
V
GS
=0V,
T
j
=125°C
2)
-200
I
GSS
V
GS
=-20V,
V
DS
=0V
Gate-source leakage current
–
–
–
-100 nA
R
DS(on)
V
GS
=-10V,
I
D
=-100A
Drain-source on-state resistance
2.0
2.8
m
W
Rev. 1.1
page 2
2018-01-18
Final Data Sheet
Conditions
IPB180P04P4-03
Values
Parameter
Symbol
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
13570
4070
110
48
17640 pF
5290
V
GS
=0V,
V
DS
=-25V,
f
=1MHz
220
–
–
–
–
ns
V
DD
=-20V,
V
GS
=-10V,
I
D
=-180A,
R
G
=3.5
W
31
t
d(off)
t
f
Turn-off delay time
Fall time
72
81
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
70
35
95
70
250
–
nC
V
DD
=-32V,
I
D
=-180A,
V
GS
=0 to -10V
Q
gd
Q
g
190
-5.2
V
plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
I
S
–
–
–
–
-180
-720
T
C
=25°C
I
S,pulse
V
GS
=0V,
I
F
=-100A,
T
j
=25°C
V
SD
Diode forward voltage
–
-1
-1.3
V
Reverse recovery time
2)
t
rr
–
–
83
–
–
ns
V
R
=-20V,
I
F
=-50A,
d
i
F
/d
t
=-100A/µs
Reverse recovery charge
2)
Q
rr
131
nC
1)
Current is limited by bondwire; with an
R
thJC
= 1.0K/W the chip is able to carry -185A at 25°C.
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2018-01-18
Final Data Sheet
2 Drain current
IPB180P04P4-03
1 Power dissipation
P
tot
= f(
T
C
);
V
GS
≤ -6V
I
D
= f(
T
C
);
V
GS
≤ -6V; SMD
160
140
120
100
80
200
180
160
140
120
100
80
60
60
40
40
20
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[
°
C]
T
C
[
°
C]
3 Safe operating area
4 Max. transient thermal impedance
Z
thJC
= f(
t
p
)
I
D
= f(
V
DS
);
T
C
= 25 °C;
D
= 0; SMD
parameter:
t
p
parameter:
D
=
t
p
/
T
10
1
1000
1 µs
10
0
10 µs
100 µs
1 ms
100
0.5
10
-1
0.1
0.05
10
0.01
10
-2
single pulse
10
-3
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.1
1
10
100
t
p
[s]
-V
DS
[V]
Rev. 1.1
page 4
2018-01-18
Final Data Sheet
IPB180P04P4-03
5 Typ. output characteristics
I
D
= f(
V
DS
);
T
j
= 25 °C; SMD
parameter:
V
GS
6 Typ. drain-source on-state resistance
R
DS(on)
= (
I
D
);
T
j
= 25 °C; SMD
parameter:
V
GS
10
720
-10V -8V
V
-5V
-5.5V
-7V
640
560
480
400
320
240
160
80
-6.5V
7
4
1
-6V
-6V
-6.5V
V
-7V
-8V
-10V
0
0
80
-I
D
[A]
160
0
2
4
6
-V
DS
[V]
7 Typ. transfer characteristics
I
D
= f(
V
GS
);
V
DS
= -6V
parameter:
T
j
8 Typ. drain-source on-state resistance
R
DS(on)
= f(
T
j
);
I
D
= -100 A;
V
GS
= -10 V; SMD
720
630
540
450
360
270
3.5
3
2.5
2
180
1.5
1
175 °C
90
-55 °C
25 °C
0
-60
-20
20
60
100
140
180
2
3
4
5
6
7
8
T
j
[
°
C]
-V
GS
[V]
Rev. 1.1
page 5
2018-01-18
Final Data Sheet
IPB180P04P4-03
9 Typ. gate threshold voltage
V
GS(th)
= f(
T
j
);
V
GS
=
V
DS
parameter:
I
D
10 Typ. capacitances
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
10
5
4
3.5
3
Ciss
10
4
10
3
10
2
10
1
Coss
-4100µA
-410µA
2.5
2
1.5
1
Crss
0
5
10
15
20
25
30
-60
-20
20
60
100
140
180
T
j
[
°
C]
-V
DS
[V]
11 Typical forward diode characteristicis
12 Drain-source breakdown voltage
IF = f(V
SD
)
V
BR(DSS)
= f(
T
j
);
I
D
= -1 mA
parameter:
T
j
10
3
45
44
43
42
41
40
39
38
37
36
35
10
2
25 °C
175 °C
10
1
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-60
-20
20
60
100
140
180
-V
SD
[V]
T
j
[
°
C]
Rev. 1.1
page 6
2018-01-18
Final Data Sheet
IPB180P04P4-03
13 Typ. gate charge
14 Gate charge waveforms
V
GS
= f(
Q
gate
);
I
D
= -180 A pulsed
parameter:
V
DD
12
10
8
V
GS
Q
g
-32V
-8V
6
4
2
0
Q
gate
Q
gd
Q
gs
0
20 40 60 80
100 120 140 160 180 200
Q
gate
[nC]
Rev. 1.1
page 7
2018-01-18
Final Data Sheet
IPB180P04P4-03
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2011
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1
page 8
2018-01-18
Final Data Sheet
IPB180P04P4-03
Revision History
Version
Date
Changes
1.0
1.1
27.04.2011 Final Data Sheet
18.01.2018 Condition for Avalanche energy
Rev. 1.1
page 9
2018-01-18
