Infineon-Technologies-IPB65R065C7
| Part # | Infineon-Technologies-IPB65R065C7 |
Download  | Infineon-Technologies-IPB65R065C7 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
CoolMOS™ꢀC7
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
DataꢀSheet
Rev.ꢀ2.0
Final
PowerꢀManagementꢀ&ꢀMultimarket
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
D²PAK
1ꢀꢀꢀꢀꢀDescription
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
tab
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
CoolMOS™ꢀC7ꢀseriesꢀcombinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJ
MOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.ꢀTheꢀproductꢀportfolio
providesꢀallꢀbenefitsꢀofꢀfastꢀswitchingꢀsuperjunctionꢀMOSFETsꢀoffering
betterꢀefficiency,ꢀreducedꢀgateꢀcharge,ꢀeasyꢀimplementationꢀand
outstandingꢀreliability.
2
1
3
Features
Drain
Pin 2, tab
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness
•ꢀBetterꢀefficiencyꢀdueꢀtoꢀbestꢀinꢀclassꢀFOMꢀR
DS(on)
*E
oss
ꢀandꢀR
DS(on)
*Q
g
•ꢀBestꢀinꢀclassꢀR
DS(on)
ꢀ/package
•ꢀEasyꢀtoꢀuse/drive
Gate
Pin 1
•ꢀPb-freeꢀplating,ꢀhalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20
andꢀJESD22)
Source
Pin 3
Benefits
•ꢀEnablingꢀhigherꢀsystemꢀefficiency
•ꢀEnablingꢀhigherꢀfrequencyꢀ/ꢀincreasedꢀpowerꢀdensityꢀsolutions
•ꢀSystemꢀcostꢀ/ꢀsizeꢀsavingsꢀdueꢀtoꢀreducedꢀcoolingꢀrequirements
•ꢀHigherꢀsystemꢀreliabilityꢀdueꢀtoꢀlowerꢀoperatingꢀtemperatures
Applications
PFCꢀstagesꢀandꢀhardꢀswitchingꢀPWMꢀstagesꢀforꢀe.g.ꢀComputing,ꢀServer,
Telecom,ꢀUPSꢀandꢀSolar.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g.typ
Value
700
65
Unit
V
m
Ω
nC
A
64
I
D,pulse
145
8
E
oss
@400V
Body diode di/dt
µJ
60
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
see Appendix A
IPB65R065C7
PG-TO 263
65C7065
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2013-10-11
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2013-10-11
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min. Typ. Max.
–
–
–
–
33
21
T
C
=25°C
T
C
=100°C
Continuous drain current
1)
I
D
A
A
Pulsed drain current
2)
I
D,pulse
E
AS
E
AR
I
AS
–
–
–
–
–
–
–
–
–
–
–
–
–
–
145
171
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
–
mJ I
D
=10.2A; V
DD
=50V; see table 10
–
0.85 mJ I
D
=10.2A; V
DD
=50V; see table 10
–
10.2
100
20
A
–
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
V/ns
V
DS
=0…400V
-20
-30
–
V
static;
30
V
AC (f>1 Hz)
171
150
150
n.a.
33
W
°C
°C
Ncm
A
T
C
=25°C
Storage temperature
-55
-55
–
–
Operating junction temperature
Mounting torque
–
–
–
Continuous diode forward current
Diode pulse current
2)
I
S
–
T
C
=25°C
T
C
=25°C
I
S,pulse
–
145
A
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt
3)
dv/dt
–
–
1.5
V/ns
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
Insulation withstand voltage
di
f
/dt
–
–
–
–
60
A/
µ
s
V
ISO
n.a.
V
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
1)
Limited by T
j max
.
2)
Pulse width t
p
limited by T
j,max
ꢀ3)
ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀ
R
G
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2013-10-11
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.73
62
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
°C/W device
on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction
– ambient
for SMD version
layer, 70µm thickness) copper
area for drain connection and
cooling. PCB is vertical without air
stream cooling.
R
thJA
–
–
35
–
45
°C/W
Soldering temperature, wave- & reflow
soldering allowed
T
sold
260
°C
reflow MSL1
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2013-10-11
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3
Typ.
–
Max.
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,ꢀ
I
D
=1mA
3.5
4
V
DS
=
V
GS
,ꢀ
I
D
=0.85mA
–
–
–
15
1
–
V
DS
=650,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=650,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
I
GSS
–
–
100
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.058 0.065
0.138
V
GS
=10V,ꢀ
I
D
=17.1A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=17.1A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
–
0.85
–
Ω
f
=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
3020
48
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
C
oss
Effective output capacitance, energy
related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
100
1110
17
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance, time related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=17.1A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=17.1A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
14
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=17.1A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
72
V
DD
=400V,ꢀ
V
GS
=13ꢀV,ꢀ
I
D
=17.1A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
7
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
16
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=400V,ꢀ
I
D
=17.1A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=17.1A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=17.1A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=17.1A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
21
Q
g
64
Gate plateau voltage
V
plateau
5.4
ꢀ1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
ꢀ2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2013-10-11
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
0.9
–
V
V
GS
=0V,ꢀ
I
F
=17.1A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=33A,ꢀd
i
F
/d
t
=60A/µs;
see table 8
–
–
–
800
10
–
–
–
ns
V
R
=400V,ꢀ
I
F
=33A,ꢀd
i
F
/d
t
=60A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=400V,ꢀ
I
F
=33A,ꢀd
i
F
/d
t
=60A/µs;
see table 8
Peak reverse recovery current
30
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2013-10-11
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
180
10
3
1 µs
160
140
120
100
80
100 µs
1 ms
10 µs
10
2
10
1
10 ms
DC
10
0
60
10
-1
10
-2
10
-3
40
20
0
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
0
10 µs
1 µs
100 µs
1 ms
10
2
10
1
0.5
0.2
10 ms
DC
0.1
10
0
10
-1
0.05
10
-1
10
-2
10
-3
0.02
0.01
single pulse
10
-2
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2013-10-11
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
160
100
20 V
8 V
20 V
90
10 V
10 V
140
120
100
80
8 V
80
70
60
50
40
30
20
10
0
7 V
7 V
6 V
5.5 V
5 V
60
6 V
40
5.5 V
20
4.5 V
5 V
4.5 V
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.24
0.16
5.5 V
6 V
6.5 V
7 V
20 V
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.14
0.12
0.10
10 V
98%
0.08
typ
0.06
0.04
0.02
0
20
40
60
80
100
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=17.1ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2013-10-11
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
160
12
11
120 V
400 V
140
120
100
80
25 °C
10
9
8
7
6
5
4
3
2
1
0
150 °C
60
40
20
0
0
2
4
6
8
10
12
0
20
40
60
80
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=17.1ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
2
180
160
140
120
100
80
125 °C
25 °C
10
1
10
0
60
40
20
10
-1
0
0.0
0.5
1.0
1.5
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=10.2ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2013-10-11
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
760
10
5
740
720
700
680
660
640
620
600
580
10
4
Ciss
10
3
Coss
10
2
10
1
Crss
10
0
-60
-20
20
60
100
140
180
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
11
10
9
8
7
6
5
4
3
2
1
0
0
100
200
300
400
500
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2013-10-11
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
6ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
V
DS
R
g
1
V
D
S
(
p
ea
k
)
V
DS
t
rr
V
DS
I
F
t
F
t
S
d
I
F
/ dt
R
g
2
I
F
t
1
0
%
I
rrm
Q
F
Q
S
I
F
dI /
dt
rr
t
rr
=
t
F
+t
S
rr
I
rrm
Q
=
Q
F
+
Q
S
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2013-10-11
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
7ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ263,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2013-10-11
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
8ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2013-10-11
650VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPB65R065C7
RevisionꢀHistory
IPB65R065C7
Revision:ꢀ2013-10-11,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2013-10-11
WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
Editionꢀ2011-08-01
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2011ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
15
Rev.ꢀ2.0,ꢀꢀ2013-10-11
