Infineon-Technologies-IPC100N04S5L-1R9
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IPC100N04S5L-1R9
OptiMOS
™
-5 Power-Transistor
Product Summary
V
DS
40
1.9
100
V
R
DS(on),max
I
D
m
W
A
Features
PG-TDSON-8-34
• OptiMOS™ – power MOSFET for automotive applications
• N-channel – Enhancement mode – Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
1
1
Type
Package
Marking
IPC100N04S5L-1R9
PG-TDSON-8-34 5N04L1R9
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current
1)
I
D
T
C
=25°C,
V
GS
=10V
100
A
T
C
=100°C,
V
GS
=10V
2)
100
Pulsed drain current
2)
I
D,pulse
E
AS
T
C
=25°C
400
130
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
I
D
=50A
mJ
A
I
AS
–
100
V
GS
–
±16
V
P
tot
T
C
=25°C
Power dissipation
100
W
°C
T
j
,
T
stg
Operating and storage temperature
–
-55 … +175
Rev. 1.3
page 1
2017-08-03
IPC100N04S5L-1R9
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics
2)
R
thJC
Thermal resistance, junction – case
–
–
–
–
–
1.5
50
K/W
Thermal resistance, junction –
ambient
6 cm
2
cooling area
3)
R
thJA
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0V,
I
D
= 1mA
V
GS(th)
V
DS
=
V
GS
,
I
D
=50µA
Drain-source breakdown voltage
Gate threshold voltage
40
–
–
V
1.2
1.6
2.0
V
DS
=40V,
V
GS
=0V,
T
j
=25°C
I
DSS
Zero gate voltage drain current
–
–
–
–
1
µA
V
DS
=40V,
V
GS
=0V,
T
j
=125°C
2)
100
I
GSS
V
GS
=16V,
V
DS
=0V
Gate-source leakage current
–
–
–
–
100 nA
R
DS(on)
V
GS
=4.5V,
I
D
=50A
V
GS
=10V,
I
D
=50A
Drain-source on-state resistance
1.8
1.4
2.5
1.9
m
W
Rev. 1.3
page 2
2017-08-03
IPC100N04S5L-1R9
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
3240
730
48
5
4310 pF
970
V
GS
=0V,
V
DS
=25V,
f
=1MHz
72
–
–
–
–
ns
5
V
DD
=20V,
V
GS
=10V,
I
D
=100A,
R
G
=3.5
W
t
d(off)
t
f
Turn-off delay time
Fall time
29
22
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
9
12
19
81
–
nC
Q
gd
13
61
2.7
V
DD
=32V,
I
D
=100A,
V
GS
=0 to 10V
Q
g
V
plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
I
S
–
–
–
–
100
400
T
C
=25°C
I
S,pulse
V
GS
=0V,
I
F
=50A,
T
j
=25°C
V
SD
Diode forward voltage
–
–
–
0.8
51
54
1.1
V
V
R
=20V,
I
F
=50A,
d
i
F
/d
t
=100A/µs
Reverse recovery time
2)
Reverse recovery charge
2)
t
rr
–
–
ns
nC
Q
rr
1)
Current is limited by package; with an
R
thJC
= 1.5 K/W the chip is able to carry 160A at 25°C.
2)
The parameter is not subject to production test- verified by design/characterization.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.3
page 3
2017-08-03
IPC100N04S5L-1R9
1 Power dissipation
2 Drain current
P
tot
= f(
T
C
);
V
GS
= 10 V
I
D
= f(
T
C
);
V
GS
= 10 V
120
100
80
60
40
20
0
120
100
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
C
[
°
C]
T
C
[
°
C]
3 Safe operating area
4 Max. transient thermal impedance
Z
thJC
= f(
t
p
)
I
D
= f(
V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
parameter:
D
=
t
p
/
T
10
1
1000
100
10
1 µs
10 µs
10
0
0.5
0.1
100 µs
10
-1
0.05
150 µs
single pulse
10
-2
10
-3
1
0.1
1
10
100
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.3
page 4
2017-08-03
IPC100N04S5L-1R9
5 Typ. output characteristics
I
D
= f(
V
DS
);
T
j
= 25 °C
parameter:
V
GS
6 Typ. drain-source on-state resistance
R
DS(on)
= f(
I
D
);
T
j
= 25 °C
parameter:
V
GS
400
360
320
12
10
280
2.5 V
8
10 V
2.75 V
240
3.5 V
200
160
120
80
6
3 V
3 V
4
2
0
3.5 V
2.75 V
2.5 V
10 V
40
0
0
1
2
3
0
50 100
150 200 250 300 350 400
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(
V
GS
);
V
DS
= 6V
parameter:
T
j
8 Typ. drain-source on-state resistance
R
DS(on)
= f(
T
j
);
I
D
= 50 A;
V
GS
= 10 V
400
350
300
250
200
150
100
3.5
2.5
1.5
0.5
175
°
C
50
-55
°
C
25
°
C
0
1.5
2
2.5
V
GS
[V]
3
3.5
4
-60
-20
20
60
100
140
180
T
j
[
°
C]
Rev. 1.3
page 5
2017-08-03
IPC100N04S5L-1R9
9 Typ. gate threshold voltage
V
GS(th)
= f(
T
j
);
V
GS
=
V
DS
parameter:
I
D
10 Typ. capacitances
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
10
4
2
Ciss
1.5
500 µA
Coss
10
3
10
2
10
1
50 µA
1
Crss
0.5
0
0
10
20
30
-60
-20
20
60
T
j
[
°
C]
100
140
180
V
DS
[V]
11 Typical forward diode characteristicis
12 Avalanche characteristics
I
A S
= f(
t
AV
IF = f(V
SD
)
)
parameter:
T
j
parameter: T
j(start)
10
3
1000
10
2
100
25 °C
25 °C
175 °C
100 °C
150 °C
10
1
10
10
0
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
V
SD
[V]
t
AV
[µs]
Rev. 1.3
page 6
2017-08-03
IPC100N04S5L-1R9
13 Avalanche energy
14 Drain-source breakdown voltage
E
AS
= f(
T
j
)
V
BR(DSS)
= f(
T
j
);
I
D
= 1 mA
46
300
250
44
42
40
38
36
25 A
200
150
50 A
100
100 A
50
0
-60
-20
20
60
100
140
180
25
75
125
175
T
j
[
°
C]
T
j
[
°
C]
15 Typ. gate charge
16 Gate charge waveforms
V
GS
= f(
Q
gate
);
I
D
= 100 A pulsed
parameter:
V
DD
10
9
8
7
6
5
4
3
2
1
0
V
GS
Q
g
8 V
32 V
V
gs(th)
Q
g(th)
Q
sw
Q
gd
Q
gate
Q
gs
0
10
20
30
40
50
60
Q
gate
[nC]
Rev. 1.3
page 7
2017-08-03
IPC100N04S5L-1R9
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2017
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.3
page 8
2017-08-03
IPC100N04S5L-1R9
Revision History
Version
Date
Changes
Revision 1.0
Revision 1.1
Revision 1.2
14.03.2016 Final Data Sheet
07.09.2016 Detailed package name added
06.12.2016 Update the IDSS for Tj=25°C
Update the Qrr and trr test
Revision 1.3
03.08.2017 condition to IF=50A
Rev. 1.3
page 9
2017-08-03
