Infineon-Technologies-IPD50R1K4CE
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IPD50R1K4CE,ꢀIPU50R1K4CE
MOSFET
DPAK
IPAK
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
tab
tab
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa
2
1
1
2
3
3
price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive
applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest
efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast
switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand
offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.
Drain
Pin 2
Gate
Pin 1
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀuse/drive
Source
Pin 3
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications
Applications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀlighting.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
I
D
Value
550
1.4
Unit
V
Ω
4.8
A
Q
g.typ
8.2
nC
A
I
D,pulse
8.8
E
oss
@400V
0.79
µJ
Typeꢀ/ꢀOrderingꢀCode
IPD50R1K4CE
Package
Marking
RelatedꢀLinks
PG-TO 252
PG-TO 251
50S1K4CE
see Appendix A
IPU50R1K4CE
Final Data Sheet
1
Rev.ꢀ2.4,ꢀꢀ2016-06-13
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD50R1K4CE,ꢀIPU50R1K4CE
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Final Data Sheet
2
Rev.ꢀ2.4,ꢀꢀ2016-06-13
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD50R1K4CE,ꢀIPU50R1K4CE
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
4.8
3.1
T
C
= 25°C
A
Continuous drain current
1)
I
D
T
C
= 100°C
Pulsed drain current
2)
I
D,pulse
E
AS
–
–
–
–
–
–
–
–
–
–
8.8
49
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
mJ
mJ
A
I
D
=1.1A; V
DD
= 50V
E
AR
0.07
1.1
50
I
D
=1.1A; V
DD
= 50V
–
I
AR
dv/dt
V/ns
V
DS
ꢀ=0…400V
-20
-30
–
–
20
30
static;
V
Gate source voltage
V
GS
P
tot
AC (f>1 Hz)
Power dissipation (non FullPAK)
TO-252, TO-251
–
–
42
W
T
C
=25°C
Operating and storage temperature
Continuous diode forward current
Diode pulse current
2)
T
j
,ꢀ
T
stg
I
S
-55
–
–
–
150
3.4
8.8
°C
A
–
–
–
T
C
=25°C
T
C
= 25°C
I
S,pulse
A
V
DS
ꢀ=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°C,
t
cond
<2
µ
s
Reverse diode dv/dt
3)
dv/dt
–
–
–
–
15
V/ns
V
DS
ꢀ=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°C,
t
cond
<2
µ
s
Maximum diode commutation speed
3)
di
f
/dt
500
A/
µ
s
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀDPAK,ꢀIPAK
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction
– case
R
thJC
–
2.95
°C/W –
SMD version, device on PCB,
–
–
–
35
62
–
minimal footprint
Thermal resistance, junction
– ambient
4
)
R
thJA
°C/W
SMD version, device on PCB, 6cm
2
cooling area
4)
Soldering temperature, wave- &
T
sold
–
–
260
°C
reflow MSL 1
reflowsoldering allowed
1)
Limited by T
j max
. Maximum duty cycle D=0.5
2)
Pulse width t
p
limited by T
j,max
3)
ꢀ
V
DClink
=400V;ꢀ
V
DS,peak
<
V
(BR)DSS
;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀ
R
G
4)
Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm
2
copper area (thickness 70
µ
m) for drain connection. PCB
is vertical without air stream cooling.
Final Data Sheet
3
Rev.ꢀ2.4,ꢀꢀ2016-06-13
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD50R1K4CE,ꢀIPU50R1K4CE
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
500
Typ.
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,ꢀ
I
D
=1mA
2.50
3
3.50
V
DS
=
V
GS
,ꢀ
I
D
=0.07mA
–
–
–
10
1
–
V
DS
=500V,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=500V,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage curent
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
I
GSS
–
–
100
V
GS
=20V,ꢀ
V
DS
=0V
–
–
1.26
3.28
1.40
–
V
GS
=13V,ꢀ
I
D
=0.9A,ꢀ
T
j
=25°C
V
GS
=13V,ꢀ
I
D
=0.9A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
7
–
Ω
f
=1ꢀMHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
178
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
C
oss
11
Effective output capacitance, energy
related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
10
36
6.5
6
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance, time
related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=1.1A,
R
G
=5.3
Ω
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=1.1A,
R
G
=5.3
Ω
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=1.1A,
R
G
=5.3
Ω
Turn-off delay time
Fall time
t
d(off)
t
f
23
30
V
DD
=400V,ꢀ
V
GS
=13ꢀV,ꢀ
I
D
=1.1A,
R
G
=5.3
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
1
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=400V,ꢀ
I
D
=1.1A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=1.1A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=1.1A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=1.1A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
4.6
Q
g
8.2
Gate plateau voltage
V
plateau
5.4
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀV
(BR)DSS
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀV
(BR)DSS
Final Data Sheet
4
Rev.ꢀ2.4,ꢀꢀ2016-06-13
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD50R1K4CE,ꢀIPU50R1K4CE
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.83
120
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
V
SD
t
rr
–
–
–
–
–
–
–
–
V
V
GS
=0V,ꢀ
I
F
=1.1A,ꢀ
T
f
=25°C
Reverse recovery time
ns
µC
A
V
R
=400V,ꢀ
I
F
=1.1A,ꢀd
i
F
/d
t
=100A/µs
V
R
=400V,ꢀ
I
F
=1.1A,ꢀd
i
F
/d
t
=100A/µs
V
R
=400V,ꢀ
I
F
=1.1A,ꢀd
i
F
/d
t
=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
rr
I
rrm
0.5
6.8
Final Data Sheet
5
Rev.ꢀ2.4,ꢀꢀ2016-06-13
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD50R1K4CE,ꢀIPU50R1K4CE
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
50
10
2
40
30
20
10
0
10
1
1 µs
10 µs
10
0
100 µs
1 ms
10
-1
10 ms
DC
10
-2
0
40
80
120
160
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
2
10
1
0.5
10
1
10
0
0.2
1 µs
0.1
0.05
0.02
10
0
10 µs
0.01
single pulse
100 µs
1 ms
10
-1
10
-1
10 ms
DC
10
-2
10
-2
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.4,ꢀꢀ2016-06-13
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD50R1K4CE,ꢀIPU50R1K4CE
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristicsꢀTj=25°C
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristicsꢀTj=125°C
12
7
20 V
10 V
6
5
4
3
2
1
0
10
20 V
10 V
8
8 V
8 V
7 V
6
7 V
6 V
4
5.5 V
6 V
5 V
2
0
5.5 V
4.5 V
5 V
4.5 V
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
5.00
4.80
4.60
4.40
4.0
3.5
3.0
5 V
6 V
7 V
4.20
4.00
3.80
3.60
3.40
3.20
3.00
2.80
2.60
2.40
2.20
6.5 V
5.5 V
98%
2.5
typ
2.0
1.5
1.0
0.5
0.0
10 V
0
2
4
6
-50
-25
0
25
50
75
100 125 150 175
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=0.9ꢀA;ꢀ
V
GS
=13ꢀV
Final Data Sheet
7
Rev.ꢀ2.4,ꢀꢀ2016-06-13
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD50R1K4CE,ꢀIPU50R1K4CE
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
10
10
25 °C
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
120 V
400 V
150 °C
0
2
4
6
8
10
0
2
4
6
8
10
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=1.1ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀAvalancheꢀenergy
Diagramꢀ12:ꢀDrain-sourceꢀbreakdownꢀvoltage
60
580
560
540
520
500
480
460
440
40
20
0
0
25
50
75
100
125
150
175
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
E
AS
=f(
T
j
);ꢀ
I
D
=1.1ꢀA;ꢀ
V
DD
=50ꢀV
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
8
Rev.ꢀ2.4,ꢀꢀ2016-06-13
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD50R1K4CE,ꢀIPU50R1K4CE
Diagramꢀ13:ꢀTyp.ꢀcapacitances
Diagramꢀ14:ꢀTyp.ꢀCossꢀstoredꢀenergy
10
4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
3
Ciss
10
2
Coss
10
1
Crss
10
0
0
100
200
300
400
500
0
100
200
300
400
500
V
DS
ꢀ[V]
V
DS
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
E
oss
=
f
(V
DS
)
Diagramꢀ15:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
1
125 °C
10
0
25 °C
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
ꢀ[V]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
9
Rev.ꢀ2.4,ꢀꢀ2016-06-13
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD50R1K4CE,ꢀIPU50R1K4CE
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
V
DS
R
g
1
V
D
S
(
p
ea
k
)
V
DS
t
rr
V
DS
I
F
t
F
t
S
d
I
F
/ dt
R
g
2
I
F
t
1
0
%
I
rrm
Q
F
Q
S
I
F
dI /
dt
rr
t
rr
=
t
F
+t
S
rr
I
rrm
Q
=
Q
F
+
Q
S
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
10
Rev.ꢀ2.4,ꢀꢀ2016-06-13
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD50R1K4CE,ꢀIPU50R1K4CE
6ꢀꢀꢀꢀꢀPackageꢀOutlines
*) mold flash not included
MILLIMETERS
DIM
INCHES
MIN
2.16
0.00
0.64
0.65
5.00
0.46
0.46
5.97
5.02
6.40
4.70
MAX
2.41
0.15
0.89
1.15
5.50
0.60
0.98
6.22
5.84
6.73
5.60
MIN
MAX
0.095
0.006
0.035
0.045
0.217
0.024
0.039
0.245
0.230
0.265
0.220
A
A1
b
0.085
0.000
0.025
0.026
0.197
0.018
0.018
0.235
0.198
0.252
0.185
b2
b3
c
DOCUMENT NO.
Z8B00003328
0
c2
D
SCALE
D1
E
2.0
0
2.0
E1
e
2.29 (BSC)
0.090 (BSC)
0.180 (BSC)
3
4mm
4.57 (BSC)
3
e1
N
EUROPEAN PROJECTION
H
9.40
1.18
0.90
0.51
10.48
0.370
0.046
0.035
0.020
0.413
L
1.70
1.25
1.00
0.067
0.049
0.039
L3
L4
F1
F2
F3
F4
F5
F6
0.417
0.252
0.087
0.228
0.227
0.047
10.60
6.40
2.20
5.80
5.76
1.20
ISSUE DATE
01-09-2015
REVISION
05
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ252,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.4,ꢀꢀ2016-06-13
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD50R1K4CE,ꢀIPU50R1K4CE
DOCUMENT NO.
Z8B00003330
MILLIMETERS
DIM
INCHES
0
MIN
2.16
0.90
0.64
0.65
4.95
0.46
0.46
5.97
5.04
6.35
4.70
MAX
2.41
1.14
0.89
1.15
5.50
0.60
0.89
6.22
5.77
6.73
5.21
MIN
MAX
0.095
0.045
0.035
0.045
0.217
0.024
0.035
0.245
0.227
0.265
0.205
SCALE
A
A1
b
0.085
0.035
0.025
0.026
0.195
0.018
0.018
0.235
0.198
0.250
0.185
2.0
0
2.0
b2
b4
c
4mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29
4.57
3
0.090
0.180
3
e1
N
ISSUE DATE
31-08-2015
L
8.89
0.85
0.89
9.65
2.29
1.37
0.350
0.033
0.035
0.380
0.090
0.054
REVISION
L1
L2
04
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ251,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.4,ꢀꢀ2016-06-13
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD50R1K4CE,ꢀIPU50R1K4CE
RevisionꢀHistory
IPD50R1K4CE, IPU50R1K4CE
Revision:ꢀ2016-06-13,ꢀRev.ꢀ2.4
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
2.3
2.4
Release of final version
2012-09-13
2012-12-05
2013-07-16
2015-11-17
2016-06-13
release of final datasheet
update to Halogen free mold compound
Updated to standard grade qualified & updated package drawing
Updated ID ratings, Zth, SOA and Pd curves
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.4,ꢀꢀ2016-06-13
