Infineon-Technologies-IPD60R1K0PFD7S
| Part # | Infineon-Technologies-IPD60R1K0PFD7S |
Download  | Infineon-Technologies-IPD60R1K0PFD7S |
IPD60R1K0PFD7S
MOSFET
DPAK
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
tab
TheꢀlatestꢀCoolMOS™ꢀPFD7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtarget
costꢀsensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,
motorꢀdrive,ꢀlighting,ꢀetc.
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing
towardsꢀveryꢀslimꢀdesigns.
2
1
3
Drain
Pin 2, Tab
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀR
DS(on)
*Q
g
ꢀandꢀR
DS(on)
*E
oss
•ꢀLowꢀswitchingꢀlossesꢀE
oss
,ꢀexcellentꢀthermalꢀbehavior
•ꢀFastꢀbodyꢀdiode
*1
Gate
Pin 1
*2
•ꢀWideꢀrangeꢀportfolioꢀofꢀR
DS(on)
ꢀandꢀpackageꢀvariations
•ꢀIntegratedꢀzenerꢀdiode
Source
Pin 3
*1: Internal body diode
*2: Integrated ESD diode
Benefits
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies
•ꢀExcellentꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀandꢀoptimizeꢀtheꢀdesign
•ꢀHighꢀESDꢀruggedness
Potentialꢀapplications
RecommendedꢀforꢀZVSꢀtopologiesꢀusedꢀinꢀhighꢀdensityꢀchargers,
adapters,ꢀlightingꢀandꢀmotorꢀdrivesꢀapplications,ꢀetc.
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Value
650
1000
6.0
Unit
V
m
Ω
nC
A
Q
g,typ
I
D,pulse
8.8
E
oss
@ 400V
Body diode di
F
/dt
ESD Class (HBM)
0.7
µJ
1300
2
A/µs
–
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPD60R1K0PFD7S
PG-TO 252-3
60S1K0D7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-10-15
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPD60R1K0PFD7S
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-10-15
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPD60R1K0PFD7S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
4.7
3.0
T
C
=25°C
A
Continuous drain current
1)
I
D
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
E
AS
E
AR
I
AS
–
–
–
–
–
–
–
–
–
–
–
–
–
–
8.8
10
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
–
mJ
mJ
A
I
D
=0.9A; V
DD
=50V; see table 10
–
0.05
0.9
120
20
I
D
=0.9A; V
DD
=50V; see table 10
–
–
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
V/ns
V
DS
=0…400V
-20
-30
–
V
static;
30
V
AC (f>1 Hz)
26
W
°C
°C
T
C
=25°C
Storage temperature
-40
-40
–
150
150
–
–
–
Operating junction temperature
Mounting torque
–
Ncm –
Continuous diode forward current
1)
Diode pulse current
2)
I
S
–
4.7
8.8
A
A
T
C
=25°C
I
S,pulse
–
T
C
=25°C
V
DS
=0…400V,ꢀ
I
SD
<=3.3A,ꢀ
T
j
=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt
3)
dv/dt
–
–
70
V/ns
see table 8
V
DS
=0…400V,ꢀ
I
SD
<=3.3A,ꢀ
T
j
=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
di
F
/dt
–
–
–
–
1300 A/
µ
s
n.a.
see table 8
V
ISO
V
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-10-15
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPD60R1K0PFD7S
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
4.8
Thermal resistance, junction – case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction – ambient
R
thJA
62
°C/W device
on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction – ambient
for SMD version
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
R
thJA
–
–
35
–
45
°C/W
Soldering temperature, wave & reflow
soldering allowed
T
sold
260
°C
reflow MSL3
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-10-15
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPD60R1K0PFD7S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,ꢀ
I
D
=1mA
4
4.5
V
DS
=
V
GS
,ꢀ
I
D
=0.05mA
–
–
–
1
1
37
V
DS
=600V,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=600V,ꢀ
V
GS
=0V,ꢀ
T
j
=125°C
Zero gate voltage drain current
1)
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
I
GSS
–
–
1000 nA
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.840 1.000
1.978
V
GS
=10V,ꢀ
I
D
=1.0A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=1.0A,ꢀ
T
j
=150°C
R
DS(on)
R
G
Ω
Ω
–
–
11.0
–
f
=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
230
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
C
oss
6
Effective output capacitance, energy
related
2)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
9
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance, time
related
3)
80
7.7
9
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=10V,ꢀ
I
D
=1.0A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=10V,ꢀ
I
D
=1.0A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
V
DD
=400V,ꢀ
V
GS
=10V,ꢀ
I
D
=1.0A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
42
50
V
DD
=400V,ꢀ
V
GS
=10V,ꢀ
I
D
=1.0A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
1.3
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=400V,ꢀ
I
D
=1.0A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=1.0A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=1.0A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=1.0A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
2.2
Q
g
6.0
Gate plateau voltage
V
plateau
5.6
1)
Maximum specification is defined by calculated six sigma upper confidence bound
2)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-10-15
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPD60R1K0PFD7S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
1.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
–
V
V
GS
=0V,ꢀ
I
F
=1.0A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=1.0A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
–
–
–
44
66
0.16
–
ns
V
R
=400V,ꢀ
I
F
=1.0A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
0.08
3.2
µC
A
V
R
=400V,ꢀ
I
F
=1.0A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-10-15
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPD60R1K0PFD7S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
30
10
1
1 µs
25
20
15
10
5
10
0
10
-1
10
-2
10
-3
10
-4
10 µs
100 µs
1 ms
10 ms
DC
0
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
1
10
1
1 µs
10
0
10
-1
10
-2
10
-3
10
-4
10 µs
0.5
0.2
100 µs
1 ms
10
0
0.1
0.05
0.02
0.01
10 ms
DC
single pulse
10
-1
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-10-15
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPD60R1K0PFD7S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
13
8
20 V
10 V
20 V
10 V
12
8 V
7
6
5
4
3
2
1
0
11
8 V
7 V
10
9
8
7 V
7
6
5
4
3
6 V
5.5 V
6 V
2
5 V
1
0
5.5 V
5 V
4.5 V
4.5 V
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
3.000
2.5
2.800
2.600
2.0
1.5
1.0
0.5
6 V
6.5 V
7 V
10 V
20 V
2.400
2.200
2.000
1.800
1.600
1.400
5.5 V
0
3
6
9
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=1.0ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-10-15
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPD60R1K0PFD7S
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
13
10
25 °C
12
11
10
9
9
8
7
6
5
4
3
2
1
0
120 V
400 V
8
7
150 °C
6
5
4
3
2
1
0
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=1.0ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
1
10
9
8
7
6
5
4
3
2
1
0
10
0
125 °C
25 °C
10
-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=0.9ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-10-15
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPD60R1K0PFD7S
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
690
10
4
660
630
600
570
540
10
3
Ciss
10
2
10
1
Coss
10
0
Crss
10
-1
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
100
200
300
400
500
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-10-15
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPD60R1K0PFD7S
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
R
g
1
V
DS
R
g
2
I
F
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2019-10-15
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPD60R1K0PFD7S
6ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00180313
MILLIMETERS
INCHES
DIM
MIN
2.20
0.00
0.68
0.72
5.13
0.46
0.46
5.98
5.25
6.40
4.70
MAX
2.40
0.15
0.89
1.10
5.50
0.60
0.60
6.22
5.40
6.73
5.60
MIN
MAX
0.094
0.006
0.035
0.043
0.217
0.024
0.024
0.245
0.213
0.265
0.220
0
A
A1
b
0.087
0.000
0.027
0.028
0.202
0.018
0.018
0.235
0.207
0.252
0.185
SCALE
2.5
b2
b3
c
0
2.5
5mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29 (BSC)
4.57 (BSC)
3
0.090 (BSC)
0.180 (BSC)
3
e1
N
ISSUE DATE
07-08-2019
H
9.40
1.38
0.90
0.60
10.48
0.370
0.054
0.035
0.024
0.413
L
1.70
1.25
1.00
0.067
0.049
0.039
REVISION
L3
L4
02
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ252-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2019-10-15
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPD60R1K0PFD7S
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2019-10-15
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPD60R1K0PFD7S
RevisionꢀHistory
IPD60R1K0PFD7S
Revision:ꢀ2019-10-15,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-10-15
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2019ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2019-10-15
