Infineon-Technologies-IPD60R3K4CE
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IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
MOSFET
DPAK
IPAK
IPAKꢀSL
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
tab
tab
tab
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa
2
1
1
2
3
3
price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive
applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest
efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast
switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand
offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.
Drain
Pin 2, Tab
Gate
Pin 1
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀuse/drive
Source
Pin 3
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications
Applications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀLighting.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
I
d.
Value
650
3400
2.6
Unit
V
m
Ω
A
Q
g.typ
4.6
nC
A
I
D,pulse
3.9
E
oss
@400V
0.57
µJ
Typeꢀ/ꢀOrderingꢀCode
IPD60R3K4CE
Package
Marking
RelatedꢀLinks
PG-TO 252
PG-TO 251
PG-TO 251
IPU60R3K4CE
60S3K4CE
see Appendix A
IPS60R3K4CE
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
2.6
1.6
T
C
=25°C
A
Continuous drain current
1)
I
D
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
E
AS
E
AR
I
AR
–
–
–
–
–
–
–
–
–
–
–
–
–
3.9
6
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
–
mJ
mJ
A
I
D
=0.3A; V
DD
=50V; see table 11
–
0.04
0.3
50
I
D
=0.3A; V
DD
=50V; see table 11
–
–
dv/dt
V
GS
V
GS
P
tot
–
V/ns
V
DS
=0…480V
-20
-30
–
20
V
static;
30
V
AC (f>1 Hz)
T
C
=25°C
–
Power dissipation
TO-252
29
W
°C
°C
A
Storage temperature
T
stg
T
j
-40
-40
–
150
150
1.8
4
Operating junction temperature
Continuous diode forward current
Diode pulse current
2)
–
I
S
T
C
=25°C
T
C
=25°C
I
S,pulse
–
A
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 9
Reverse diode dv/dt
3)
dv/dt
di
f
/dt
–
–
–
–
15
V/ns
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 9
Maximum diode commutation speed
500
A/
µ
s
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀꢀTO-252ꢀ/ꢀTO-251
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
4.26
62
Thermal resistance, junction – case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction – ambient
R
thJA
°C/W device
on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction – ambient
for SMD version
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
R
thJA
–
–
35
–
45
°C/W
Soldering temperature, wave & reflow
soldering allowed
T
sold
260
°C
reflow MSL1
1)
Limited by T
j max
. Maximum duty cycle D=0.50
2)
Pulse width t
p
limited by T
j,max
3)
ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀ
R
G
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
2.5
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
V
V
V
GS
=0V,ꢀ
I
D
=0.25mA
V
DS
=
V
GS
,ꢀ
I
D
=0.04mA
3.0
3.5
–
–
–
10
1
–
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
I
GSS
–
–
100
V
GS
=20V,ꢀ
V
DS
=0V
–
–
3.17
8.22
3.40
–
V
GS
=10V,ꢀ
I
D
=0.5A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=0.5A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
15
–
Ω
f
=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
93
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
C
oss
9
Effective output capacitance,
energy related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
6.4
20.6
8
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…480V
Effective output capacitance,
time related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…480V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=0.6A,
R
G
=20
Ω
;ꢀseeꢀtableꢀ10
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=0.6A,
R
G
=20
Ω
;ꢀseeꢀtableꢀ10
10
40
60
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=0.6A,
R
G
=20
Ω
;ꢀseeꢀtableꢀ10
Turn-off delay time
Fall time
t
d(off)
t
f
V
DD
=400V,ꢀ
V
GS
=13ꢀV,ꢀ
I
D
=0.6A,
R
G
=20
Ω
;ꢀseeꢀtableꢀ10
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
0.5
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=480V,ꢀ
I
D
=0.6A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=480V,ꢀ
I
D
=0.6A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=480V,ꢀ
I
D
=0.6A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=480V,ꢀ
I
D
=0.6A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
2.6
Q
g
4.6
Gate plateau voltage
V
plateau
5.4
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀV
o(BR)DSS
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀV
o(BR)DSS
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
–
V
V
GS
=0V,ꢀ
I
F
=0.6A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=0.6A,ꢀd
i
F
/d
t
=100A/µs;
see table 9
–
–
–
160
0.42
5.1
–
–
–
ns
V
R
=400V,ꢀ
I
F
=0.6A,ꢀd
i
F
/d
t
=100A/µs;
see table 9
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=400V,ꢀ
I
F
=0.6A,ꢀd
i
F
/d
t
=100A/µs;
see table 9
Peak reverse recovery current
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipationꢀ(NonꢀFullPAK)
Diagramꢀ2:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)
30
10
1
1 µs
25
20
15
10
5
10 µs
10
0
100 µs
1 ms
DC
10
-1
10
-2
10
-3
0
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(NonꢀFullPAK)
10
1
10
1
1 µs
0.5
10
0
0.2
0.1
10 µs
100 µs
10
0
1 ms
0.05
0.02
DC
10
-1
10
-2
10
-3
0.01
single pulse
10
-1
10
-2
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
5
3.0
20 V
20 V
2.5
2.0
1.5
1.0
0.5
0.0
4
10 V
10 V
8 V
7 V
8 V
3
7 V
6 V
2
5.5 V
6 V
5 V
1
0
5.5 V
4.5 V
5 V
4.5 V
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
12
10
5 V
6.5 V
5.5 V
6 V
7 V
9
8
7
6
10
8
10 V
6
5
98%
4
typ
4
3
2
1
0
2
0
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=0.5ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
5
10
9
8
7
6
5
4
3
2
1
0
25 °C
4
120 V
480 V
3
150 °C
2
1
0
0
2
4
6
8
10
0
1
2
3
4
5
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=0.6ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
2
7
25 °C
125 °C
6
5
4
3
2
1
0
10
1
10
0
10
-1
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=0.3ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
700
10
4
680
660
640
620
600
580
560
540
520
10
3
Ciss
10
2
10
1
Coss
Crss
10
0
-75 -50 -25
0
25
50
75 100
125 150 175
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=0.25ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
0
100
200
300
400
500
600
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
V
DS
R
g
1
V
D
S
(
p
ea
k
)
V
DS
t
rr
V
DS
I
F
t
F
t
S
d
I
F
/ dt
R
g
2
I
F
t
1
0
%
I
rrm
Q
F
Q
S
I
F
dI /
dt
rr
t
rr
=
t
F
+t
S
rr
I
rrm
Q
=
Q
F
+
Q
S
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
6ꢀꢀꢀꢀꢀPackageꢀOutlines
*) mold flash not included
MILLIMETERS
DIM
INCHES
MIN
2.16
0.00
0.64
0.65
5.00
0.46
0.46
5.97
5.02
6.40
4.70
MAX
2.41
0.15
0.89
1.15
5.50
0.60
0.98
6.22
5.84
6.73
5.60
MIN
MAX
0.095
0.006
0.035
0.045
0.217
0.024
0.039
0.245
0.230
0.265
0.220
A
A1
b
0.085
0.000
0.025
0.026
0.197
0.018
0.018
0.235
0.198
0.252
0.185
b2
b3
c
DOCUMENT NO.
Z8B00003328
0
c2
D
SCALE
D1
E
2.0
0
2.0
E1
e
2.29 (BSC)
0.090 (BSC)
0.180 (BSC)
3
4mm
4.57 (BSC)
3
e1
N
EUROPEAN PROJECTION
H
9.40
1.18
0.90
0.51
10.48
0.370
0.046
0.035
0.020
0.413
L
1.70
1.25
1.00
0.067
0.049
0.039
L3
L4
F1
F2
F3
F4
F5
F6
0.417
0.252
0.087
0.228
0.227
0.047
10.60
6.40
2.20
5.80
5.76
1.20
ISSUE DATE
01-09-2015
REVISION
05
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ252,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
DOCUMENT NO.
Z8B00003330
MILLIMETERS
DIM
INCHES
0
MIN
2.16
0.90
0.64
0.65
4.95
0.46
0.46
5.97
5.04
6.35
4.70
MAX
2.41
1.14
0.89
1.15
5.50
0.60
0.89
6.22
5.77
6.73
5.21
MIN
MAX
0.095
0.045
0.035
0.045
0.217
0.024
0.035
0.245
0.227
0.265
0.205
SCALE
A
A1
b
0.085
0.035
0.025
0.026
0.195
0.018
0.018
0.235
0.198
0.250
0.185
2.0
0
2.0
b2
b4
c
4mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29
4.57
3
0.090
0.180
3
e1
N
ISSUE DATE
31-08-2015
L
8.89
0.85
0.89
9.65
2.29
1.37
0.350
0.033
0.035
0.380
0.090
0.054
REVISION
L1
L2
04
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ251,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
DOCUMENT NO.
Z8B00003329
MILLIMETERS
DIM
INCHES
0
MIN
2.18
0.80
0.64
0.65
4.95
0.46
0.46
5.97
5.04
6.35
4.60
MAX
2.40
1.14
0.89
1.15
5.50
0.59
0.89
6.22
5.55
6.73
5.21
MIN
MAX
0.094
0.045
0.035
0.045
0.217
0.023
0.035
0.245
0.219
0.265
0.205
SCALE
A
A1
b
0.086
0.031
0.025
0.026
0.195
0.018
0.018
0.235
0.198
0.250
0.181
2.0
0
2.0
b2
b4
c
4mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29
4.57
3
0.090
0.180
3
e1
N
ISSUE DATE
21-10-2015
L
3.00
0.80
0.88
3.60
1.25
1.28
0.118
0.031
0.035
0.142
0.049
0.050
REVISION
L1
L2
06
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ251,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2016-02-26
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
IPD60R3K4CE,ꢀIPU60R3K4CE,ꢀIPS60R3K4CE
RevisionꢀHistory
IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE
Revision:ꢀ2016-02-26,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2016-02-26
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
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respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
15
Rev.ꢀ2.0,ꢀꢀ2016-02-26
