Infineon-Technologies-IPD85P04P4-07
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IPD85P04P4-07
OptiMOS
®
-P2 Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
-40
7.3
-85
V
m
W
A
Features
• P-channel – Normal Level – Enhancement mode
• AEC qualified
PG-TO252-3-313
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPD85P04P4-07
PG-TO252-3-313
4P0407
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T
C
=25°C,
V
GS
=-10V
I
D
Continuous drain current
-85
-61
A
T
C
=100°C,
V
GS
=-10V
2)
Pulsed drain current
1)
I
D,pulse
E
AS
I
AS
T
C
=25°C
-340
30
Avalanche energy, single pulse
1)
Avalanche current, single pulse
Gate source voltage
I
D
=-42.5A
mJ
A
–
-85
±20
88
V
GS
P
tot
–
V
T
C
=25 °C
Power dissipation
W
°C
T
j
,
T
stg
–
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
–
–
-55 … +175
55/175/56
Rev. 1.0
page 1
2011-04-18
IPD85P04P4-07
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
2)
R
thJC
R
thJA
Thermal resistance, junction – case
SMD version, device on PCB
–
–
–
–
–
–
–
1.7
62
40
K/W
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0V,
I
D
= -1mA
V
GS(th)
V
DS
=
V
GS
,
I
D
=-150µA
Drain-source breakdown voltage
Gate threshold voltage
-40
–
–
V
-2.0
-3.0
-4.0
V
DS
=-32V,
V
GS
=0V,
T
j
=25°C
I
DSS
Zero gate voltage drain current
–
–
-0.05
-20
-1
µA
V
DS
=-32V,
V
GS
=0V,
T
j
=125°C
2)
-200
I
GSS
V
GS
=-20V,
V
DS
=0V
Gate-source leakage current
–
–
–
-100 nA
R
DS(on)
V
GS
=-10V,
I
D
=-85A
Drain-source on-state resistance
5.3
7.3
m
W
Rev. 1.0
page 2
2011-04-18
IPD85P04P4-07
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
4681
1520
45
6085 pF
2280
V
GS
=0V,
V
DS
=-25V,
f
=1MHz
91
24
–
–
–
–
ns
V
DD
=-20V,
V
GS
=-10V,
I
D
=-85A,
R
G
=3.5
W
15
t
d(off)
t
f
Turn-off delay time
Fall time
34
39
Gate Charge Characteristics
1)
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
26
13
34
26
89
–
nC
Q
gd
V
DD
=-32V,
I
D
=-85A,
V
GS
=0 to -10V
Q
g
69
V
plateau
Gate plateau voltage
-5.5
V
A
Reverse Diode
Diode continous forward current
1)
Diode pulse current
1)
I
S
–
–
–
–
-85
T
C
=25°C
I
S,pulse
-340
V
GS
=0V,
I
F
=-85A,
T
j
=25°C
V
SD
Diode forward voltage
–
-1
-1.3
V
Reverse recovery time
1)
t
rr
–
–
48
54
–
–
ns
V
R
=-20V,
I
F
=-50A,
d
i
F
/d
t
=-100A/µs
Reverse recovery charge
1)
Q
rr
nC
1)
Defined by design. Not subject to production test.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2011-04-18
IPD85P04P4-07
1 Power dissipation
2 Drain current
P
tot
= f(
T
C
);
V
GS
≤ -6V
I
D
= f(
T
C
);
V
GS
= -10V
100
80
60
40
20
0
100
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
4 Max. transient thermal impedance
Z
thJC
= f(
t
p
)
I
D
= f(
V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
parameter:
D
=
t
p
/
T
10
1
1000
1 µs
10
0
0.5
10 µs
100
100 µs
0.1
10
-1
1 ms
0.05
0.01
10
10
-2
single pulse
10
-3
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.1
1
10
100
t
p
[s]
-V
DS
[V]
Rev. 1.0
page 4
2011-04-18
IPD85P04P4-07
5 Typ. output characteristics
I
D
= f(
V
DS
);
T
j
= 25 °C
parameter:
V
GS
6 Typ. drain-source on-state resistance
R
DS(on)
= (
I
D
);
T
j
= 25 °C
parameter:
V
GS
25
-10V
-5V
-5.5V
280
20
15
10
5
-7V
210
140
70
-6V
-6V
-5.5V
-5V
-6.5V
-7V
-10V
0
0
25
50
-I
D
[A]
75
0
1
2
3
4
5
6
-V
DS
[V]
7 Typ. transfer characteristics
I
D
= f(
V
GS
);
V
DS
= -6V
parameter:
T
j
8 Typ. drain-source on-state resistance
R
DS(on)
= f(
T
j
);
I
D
= -85 A;
V
GS
= -10 V
9
8
7
6
5
4
3
280
210
140
70
175 °C
25 °C
-55 °C
0
-60
-20
20
60
100
140
180
2
3
4
5
6
7
8
T
j
[°C]
-V
GS
[V]
Rev. 1.0
page 5
2011-04-18
IPD85P04P4-07
9 Typ. gate threshold voltage
V
GS(th)
= f(
T
j
);
V
GS
=
V
DS
parameter: –
I
D
10 Typ. capacitances
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
4
3.5
3
10
5
10
4
10
3
10
2
10
1
1500µA
Ciss
150µA
Coss
2.5
2
1.5
1
Crss
0
5
10
15
20
25
30
35
40
-60
-20
20
60
T
j
[°C]
100
140
180
-V
DS
[V]
11 Typical forward diode characteristicis
I
F
= f(V
SD
12 Drain-source breakdown voltage
)
V
BR(DSS)
= f(
T
j
);
I
D
= -1 mA
parameter:
T
j
10
3
45
44
43
42
41
40
39
38
37
36
35
10
2
25 °C
175 °C
10
1
10
0
0
0.4
0.8
-V
SD
[V]
1.2
1.6
-60
-20
20
60
100
140
180
T
j
[°C]
Rev. 1.0
page 6
2011-04-18
IPD85P04P4-07
13 Typ. gate charge
V
GS
= f(
Q
gate
);
I
D
= -85 A pulsed
parameter:
V
DD
14 Gate charge waveforms
10
9
8
7
6
5
4
3
2
1
0
8V
V
GS
Q
g
32V
Q
gate
Q
gd
Q
gs
0
10
20
30
40
50
60
70
Q
gate
[nC]
Rev. 1.0
page 7
2011-04-18
IPD85P04P4-07
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2011
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2011-04-18
IPD85P04P4-07
Revision History
Version
Date
Changes
0.1
0.2
1.0
08.03.2010 Initial Target Data Sheet
10.12.2010 Preliminary Data Sheet
15.03.2011 Final Data Sheet
Rev. 1.0
page 9
2011-04-18
