Infineon-Technologies-IPD95R750P7
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IPD95R750P7
MOSFET
DPAK
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
Theꢀlatestꢀ950VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ950V
superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith
stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears
pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.
tab
Features
2
1
•ꢀBest-in-classꢀFOMꢀR
DS(on)
ꢀ*ꢀE
oss
;ꢀreducedꢀQ
g
,ꢀC
iss
,ꢀandꢀC
oss
•ꢀBest-in-classꢀDPAKꢀR
DS(on)
3
•ꢀBest-in-classꢀV
(GS)th
ꢀofꢀ3VꢀandꢀsmallestꢀꢀV
(GS)th
ꢀvariationꢀofꢀ±0.5V
•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection
•ꢀBest-in-classꢀCoolMOS™ꢀqualityꢀandꢀreliability
•ꢀFullyꢀoptimizedꢀportfolio
Drain
Pin 2
Benefits
•ꢀBest-in-classꢀperformance
*1
Gate
Pin 1
*2
•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower
assemblyꢀcosts
•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel
Source
Pin 3
*1: Internal body diode
*2: Integrated ESD diode
•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures
•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns
Potentialꢀapplications
RecommendedꢀforꢀflybackꢀtopologiesꢀforꢀLEDꢀLighting,ꢀlowꢀpower
ChargersꢀandꢀAdapters,ꢀSmartꢀMeter,ꢀAUXꢀpowerꢀandꢀIndustrialꢀpower.
AlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀandꢀSolarꢀapplications.
ProductꢀValidation:
ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j=25°C
R
DS(on),max
Q
g,typ
Value
950
0.75
23
Unit
V
Ω
nC
A
I
D
9
E
oss
@ 500V
V
GS(th),typ
1.9
3
µJ
V
ESD class (HBM)
2
–
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPD95R750P7
PG-TO 252-3
95R750P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2018-06-04
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R750P7
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2018-06-04
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R750P7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
9
5.5
T
C
=25°C
A
Continuous drain current
1)
I
D
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
E
AS
–
–
–
–
–
–
27
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
18
mJ
mJ
I
D
=1.1A; V
DD
=50V; see table 10
I
D
=1.1A; V
DD
=50V; see table 10
E
AR
0.22
Application (Flyback) relevant
avalanche current, single pulse
3)
measured with standard leakage
inductance of transformer of 10µH
I
AS
–
4.0
–
A
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
–
–
–
–
–
–
–
–
–
100
20
V/ns
V
DS
=0…400V
-20
-30
–
V
static;
30
V
AC (f>1 Hz)
73
W
°C
°C
T
C
=25°C
Storage temperature
-55
-55
–
150
150
–
–
–
Operating junction temperature
Mounting torque
–
Ncm –
Continuous diode forward current
Diode pulse current
2)
I
S
–
6.2
27
A
A
T
C
=25°C
I
S,pulse
–
T
C
=25°C
V
DS
=0…400V,ꢀ
I
SD
<=2.2A,ꢀ
T
j
=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt
4)
dv/dt
–
–
1
V/ns
see table 8
V
DS
=0…400V,ꢀ
I
SD
<=2.2A,ꢀ
T
j
=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
di
F
/dt
–
–
–
–
50
A/
µ
s
see table 8
V
ISO
n.a.
V
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.5
2)
Pulse width t
p
limited by T
j,max
3)
For further explanation please read AN – CoolMOS
TM
700V P7 & 950V P7
4)
Identical low side and high side switch with identical R
G
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2018-06-04
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R750P7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
1.7
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
62
°C/W device
on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction
– ambient
for SMD version
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
R
thJA
–
–
35
–
45
°C/W
Soldering temperature, wave- & reflow
soldering allowed
T
sold
260
°C
reflow MSL1
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2018-06-04
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R750P7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
950
2.5
Typ.
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,ꢀ
I
D
=1mA
3
3.5
V
DS
=
V
GS
,ꢀ
I
D
=0.22mA
–
–
–
10
1
–
V
DS
=950V,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=950V,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
I
GSS
–
–
1000 nA
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.64
1.429
0.75
–
V
GS
=10V,ꢀ
I
D
=4.5A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=4.5A,ꢀ
T
j
=150°C
R
DS(on)
R
G
Ω
–
1
–
Ω
f
=250kHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
712
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
C
oss
11
Effective output capacitance, energy
related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
18
182
8
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance, time
related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=4.5A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=4.5A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
7
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=4.5A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
46
8
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=4.5A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
3
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=760V,ꢀ
I
D
=4.5A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=760V,ꢀ
I
D
=4.5A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=760V,ꢀ
I
D
=4.5A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=760V,ꢀ
I
D
=4.5A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
7
Q
g
23
Gate plateau voltage
V
plateau
4.4
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2018-06-04
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R750P7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
–
V
V
GS
=0V,ꢀ
I
F
=4.5A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=2.2A,ꢀd
i
F
/d
t
=50A/µs;
see table 8
–
–
–
684
5
–
–
–
ns
V
R
=400V,ꢀ
I
F
=2.2A,ꢀd
i
F
/d
t
=50A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=400V,ꢀ
I
F
=2.2A,ꢀd
i
F
/d
t
=50A/µs;
see table 8
Peak reverse recovery current
12
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2018-06-04
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R750P7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
80
10
2
1 µs
10
1
10
0
60
40
20
0
10 µs
100 µs
10
-1
10
-2
10
-3
10
-4
1 ms
10 ms
DC
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
2
10
1
10
1
10
0
1 µs
10 µs
10
0
0.5
100 µs
0.2
10
-1
10
-2
10
-3
10
-4
0.1
1 ms
10 ms
DC
0.05
0.02
10
-1
0.01
single pulse
10
-2
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2018-06-04
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R750P7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
20
12
20 V
10 V
20 V
10 V
8 V
15
9
8 V
7 V
7 V
6 V
6 V
5.5 V
5.5 V
5 V
10
6
3
0
5 V
4.5 V
4.5 V
5
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
2.300
2.5
20 V
10 V
6 V
5.5 V
4.5 V
2.0
1.5
1.0
0.5
1.800
1.300
0.800
4 V
0
3
6
9
12
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=4.5ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2018-06-04
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R750P7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
20
12
10
8
25 °C
15
120 V
760 V
10
6
150 °C
4
5
0
2
0
0
2
4
6
8
10
12
0
5
10
15
20
25
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=4.5ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
2
20
15
10
5
10
1
25 °C
125 °C
10
0
10
-1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=1.1ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2018-06-04
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R750P7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
1100
10
4
1050
1000
950
10
3
Ciss
10
2
Coss
10
1
10
0
Crss
900
850
10
-1
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
8
6
4
2
0
0
100 200 300 400 500 600 700 800 900
1000
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2018-06-04
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R750P7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
R
g
1
V
DS
R
g
2
I
F
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2018-06-04
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R750P7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00003328
MILLIMETERS
DIM
INCHES
MIN
2.16
0.00
0.64
0.65
4,95
0.46
0.40
5.97
5.02
6.35
4.32
MAX
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.21
MIN
MAX
0.095
0.006
0.035
0.045
0.217
0.024
0.039
0.245
0.230
0.265
0.205
0
A
A1
b
0.085
0.000
0.025
0.026
0.195
0.018
0.016
0.235
0.198
0.250
0.185
SCALE
2.5
b2
b3
c
0
2.5
5mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29 (BSC)
0.090 (BSC)
0.180 (BSC)
3
4.57 (BSC)
3
e1
N
ISSUE DATE
05-02-2016
H
9.40
1.18
0.89
0.51
10.48
0.370
0.046
0.035
0.020
0.413
L
1.78
1.27
1.02
0.070
0.050
0.040
REVISION
06
L3
L4
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ252-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2018-06-04
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R750P7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2018-06-04
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPD95R750P7
RevisionꢀHistory
IPD95R750P7
Revision:ꢀ2018-06-04,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
Final
2018-05-30
2018-06-04
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.1,ꢀꢀ2018-06-04
