Infineon-Technologies-IPG20N10S4L35ATMA1
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IPG20N10S4L-35
OptiMOS
™
-T2 Power-Transistor
Product Summary
V
DS
100
35
V
4)
m
W
A
R
DS(on),max
I
D
20
Features
• Dual N-channel Logic Level – Enhancement mode
PG-TDSON-8-4
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPG20N10S4L-35
PG-TDSON-8-4 4N10L35
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current
one channel active
T
C
=25 °C,
V
GS
=10 V
1)
I
D
20
17
80
A
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
one channel active
I
D,pulse
–
Avalanche energy, single pulse
2, 4)
Avalanche current, single pulse
4)
Gate source voltage
E
AS
I
AS
I
D
=10A
60
15
mJ
A
–
V
GS
–
±16
V
Power dissipation
one channel active
P
tot
T
C
=25 °C
43
W
T
j
,
T
stg
Operating and storage temperature
–
-55 … +175
°C
Rev. 1.1
page 1
2012-05-15
IPG20N10S4L-35
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
2)
R
thJC
R
thJA
Thermal resistance, junction – case
SMD version, device on PCB
–
–
–
–
–
3.5
K/W
minimal footprint
100
60
–
–
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
V
GS(th)
V
DS
=
V
GS
,
I
D
= 16µA
Drain-source breakdown voltage
Gate threshold voltage
100
1.1
–
–
V
1.6
2.1
V
DS
=100 V,
V
GS
=0 V,
T
j
=25 °C
Zero gate voltage drain current
4)
I
DSS
–
–
0.01
1
1
µA
V
DS
=100 V,
V
GS
=0 V,
T
j
=125 °C
2)
100
Gate-source leakage current
4)
I
GSS
V
GS
=16 V,
V
DS
=0 V
–
–
–
–
100 nA
Drain-source on-state resistance
4)
R
DS(on)
V
GS
=4.5 V,
I
D
=10 A
V
GS
=10 V,
I
D
=17 A
38
29
45
35
m
W
Rev. 1.1
page 2
2012-05-15
IPG20N10S4L-35
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
4)
Output capacitance
4)
Reverse transfer capacitance
4)
Turn-on delay time
Rise time
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
850
285
30
3
1105 pF
370
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
60
–
–
–
–
ns
2
V
DD
=50 V,
V
GS
=10 V,
I
D
=20 A,
R
G
=11
W
t
d(off)
t
f
Turn-off delay time
Fall time
18
13
Gate Charge Characteristics
2, 4)
Gate to source charge
Gate to drain charge
Q
gs
–
–
–
–
2.9
3.2
3.8
6.4
17.4
–
nC
Q
gd
V
DD
=80 V,
I
D
=20 A,
V
GS
=0 to 10 V
Q
g
Gate charge total
13.4
3.5
V
plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current
2)
one channel active
I
S
–
–
–
–
–
–
20
80
1.3
–
T
C
=25 °C
Diode pulse current
2)
one channel active
I
S,pulse
V
SD
t
rr
–
V
GS
=0 V,
I
F
=17 A,
T
j
=25 °C
Diode forward voltage
1.0
50
75
V
V
R
=50 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/µs
Reverse recovery time
2)
Reverse recovery charge
2, 4)
ns
nC
Q
rr
–
1)
Current is limited by bondwire; with an
R
thJC
= 3.5K/W the chip is able to carry 24A at 25°C.
2)
Specified by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
Per channel
Rev. 1.1
page 3
2012-05-15
IPG20N10S4L-35
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
);
V
GS
≥6 V; one channel active
I
D
=f(
T
C
);
V
GS
≥6 V; one channel active
45
40
35
30
25
20
15
10
5
25
20
15
10
5
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
I
D
=f(
V
DS
);
T
C
=25°C;
D
=0; one channel active
parameter:
t
p
parameter:
D
=
t
p
/
T
10
1
100
1 µs
10 µs
0.5
10
0
10
100 µs
0.1
0.05
10
-1
1
0.01
1 ms
single pulse
10
-2
0.1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.1
1
10
100
t
p
[s]
V
DS
[V]
Rev. 1.1
page 4
2012-05-15
IPG20N10S4L-35
5 Typ. output characteristics
5)
I
D
=f(
V
DS
);
T
j
=25°C
6 Typ. drain-source on-state resistance
5)
R
DS(on)
=f(
I
D
);
T
j
=25°C
parameter:
V
GS
parameter:
V
GS
80
60
40
20
0
90
4 V
10 V
3.5 V
4.5 V
5 V
80
70
60
50
40
30
20
4.5 V
4 V
5 V
3.5 V
10 V
0
1
2
3
4
5
0
20
40
60
80
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
5)
I
D
=f(
V
GS
);
V
DS
=6V
8 Typ. drain-source on-state resistance
5)
R
DS(on)
=f(
T
j
);
I
D
=17A;
V
GS
=10V
parameter:
T
j
80
60
40
20
65
55
45
35
25
15
175 °C
25 °C
-55 °C
0
1
2
3
4
5
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.1
page 5
2012-05-15
IPG20N10S4L-35
10 Typ. Capacitances
5)
9 Typ. gate threshold voltage
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
parameter:
I
D
C
=f(
V
DS
);
V
GS
=0V;
f
=1MHz
2.5
10
4
10
3
10
2
10
1
2
160µA
Ciss
1.5
16µA
Coss
1
0.5
0
Crss
0
5
10
15
20
25
30
-60
-20
20
60
T
j
[°C]
100
140
180
V
DS
[V]
11 Typical forward diode characteristicis
5)
I
F
=f(V
SD
12 Avalanche characteristics
5)
I
A S
= f(
t
AV
)
)
parameter:
T
j
parameter: T
j(start)
10
2
100
10
150 °C
10
1
100 °C
25 °C
25 °C
175 °C
1
10
0
0
0.1
1
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
V
SD
[V]
t
AV
[µs]
Rev. 1.1
page 6
2012-05-15
IPG20N10S4L-35
13 Avalanche energy
5)
14 Drain-source breakdown voltage
E
AS
=f(
T
j
),
I
D
=10A
V
BR(DSS)
=f(
T
j
);
I
D
=1mA
115
60
50
40
30
20
10
0
110
105
100
95
90
-60
-20
20
60
100
140
180
25
50
75
100
125
150
175
T
j
[°C]
T
j
[°C]
15 Typ. gate charge
5)
16 Gate charge waveforms
V
GS
=f(
Q
gate
);
I
D
=20A pulsed
parameter:
V
DD
12
10
8
V
GS
Q
g
20V
80 V
6
V
g
s(th)
4
2
Q
g
(
t
h)
Q
sw
Q
g
d
Q
g
ate
Q
g
s
0
0
3
6
9
12
15
Q
gate
[nC]
Rev. 1.1
page 7
2012-05-15
IPG20N10S4L-35
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2011
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1
page 8
2012-05-15
IPG20N10S4L-35
Revision History
Version
Date
Changes
Revision 1.0
Revision 1.1
29.11.2011
15.05.2012
Final Data Sheet
Update of product marking
Rev. 1.1
page 9
2012-05-15
