Infineon-Technologies-IPI076N15N5
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IPI076N15N5
MOSFET
OptiMOS
ª
5ꢀPower-Transistor,ꢀ150ꢀV
I²-PAK
Features
tab
•ꢀExcellentꢀgateꢀchargeꢀxꢀ
R
DS(on)
ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀ
R
DS(on)
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Q
rr)
•ꢀ175ꢀ°Cꢀoperatingꢀtemperature
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
1)
ꢀꢀforꢀtargetꢀapplication
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
1
2
3
Drain
Pin 2, Tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
150
7.6
Unit
V
DS
V
Gate
Pin 1
R
DS(on),max
m
Ω
A
Source
Pin 3
I
D
112
96
Q
rr
nC
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPI076N15N5
PG-TO262-3
076N15N5
–
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOS
ª
5ꢀPower-Transistor,ꢀ150ꢀV
IPI076N15N5
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOS
ª
5ꢀPower-Transistor,ꢀ150ꢀV
IPI076N15N5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
A
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
112
79
T
C
=25ꢀ°C
A
Continuous drain current
I
D
T
C
=100ꢀ°C
Pulsed drain current
1)
Avalanche energy, single pulse
2)
Gate source voltage
I
D,pulse
E
AS
–
–
–
–
–
448
130
20
A
T
C
=25ꢀ°C
–
mJ
V
I
D
=100ꢀA,ꢀ
R
GS
=25ꢀ
Ω
V
GS
P
tot
-20
–
–
Power dissipation
214
W
T
C
=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
0.4
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case
R
thJC
R
thJA
–
0.7
K/W
K/W
–
–
Thermal resistance, junction
– ambient,
minimal footprint
–
–
62
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
150
3.0
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
3.8
4.6
V
DS
=
V
GS
,ꢀ
I
D
=160ꢀµA
–
–
0.1
10
1
100
V
DS
=120ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=120ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
1
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
5.9
6.4
7.6
8.4
V
GS
=10ꢀV,ꢀ
I
D
=56ꢀA
V
GS
=8ꢀV,ꢀ
I
D
=28ꢀA
R
DS(on)
m
Ω
Gate resistance
3)
Transconductance
R
G
g
fs
–
1.1
90
1.7
–
Ω
–
45
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=56ꢀA
1)
See Diagram 3
2)
See Diagram 13
3)
Defined by design. Not subject to production test.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOS
ª
5ꢀPower-Transistor,ꢀ150ꢀV
IPI076N15N5
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
C
iss
C
oss
C
rss
–
–
–
3600 4700 pF
V
GS
=0ꢀV,ꢀ
V
DS
=75ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=75ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=75ꢀV,ꢀ
f
=1ꢀMHz
900
21
1200 pF
37
–
pF
ns
V
DD
=75ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=56ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
14
4
V
DD
=75ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=56ꢀA,
R
G,ext
=1.6ꢀ
Ω
–
–
–
ns
ns
ns
V
DD
=75ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=56ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-off delay time
Fall time
20
4
V
DD
=75ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=56ꢀA,
R
G,ext
=1.6ꢀ
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
2)
ꢀ
Values
Typ.
21
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
1)
Switching charge
Gate charge total
1)
Gate plateau voltage
Output charge
1)
Q
gs
–
–
–
–
–
–
–
nC
nC
nC
nC
V
V
DD
=75ꢀV,ꢀ
I
D
=56ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
I
D
=56ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
I
D
=56ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
I
D
=56ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
I
D
=56ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
V
GS
=0ꢀV
Q
gd
10
15
–
Q
sw
Q
g
17
49
61
–
V
plateau
Q
oss
5.7
136
181
nC
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
–
Max.
112
448
1.1
Diode continous forward current
Diode pulse current
I
S
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
t
rr
–
A
T
C
=25ꢀ°C
Diode forward voltage
0.89
69
96
V
V
GS
=0ꢀV,ꢀ
I
F
=56ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=75ꢀV,ꢀ
I
F
=
56ꢀA
,ꢀd
i
F
/d
t
=100ꢀA/µs
V
R
=75ꢀV,ꢀ
I
F
=
56ꢀA
,ꢀd
i
F
/d
t
=100ꢀA/µs
Reverse recovery time
1)
Reverse recovery charge
1)
138
192
ns
nC
Q
rr
1)
Defined by design. Not subject to production test.
2)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOS
ª
5ꢀPower-Transistor,ꢀ150ꢀV
IPI076N15N5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
240
120
200
160
120
80
100
80
60
40
20
0
40
0
0
50
100
150
200
0
50
100
150
200
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
0
1 µs
10 µs
100 µs
0.5
0.2
10
2
10
1
10
0
10
-1
1 ms
10
-1
0.1
10 ms
0.05
0.02
0.01
DC
single pulse
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOS
ª
5ꢀPower-Transistor,ꢀ150ꢀV
IPI076N15N5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
12
5.5 V
10 V
350
300
250
200
150
100
50
8 V
6 V
10
7 V
8 V
8
7 V
10 V
6
4
2
0
6 V
5.5 V
5 V
0
0
1
2
3
4
5
0
50
100
150
200
250
300
350
400
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
250
160
140
120
100
80
200
150
100
60
40
50
20
175 °C
25 °C
0
0
0
2
4
6
8
0
40
80
120
160
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOS
ª
5ꢀPower-Transistor,ꢀ150ꢀV
IPI076N15N5
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
20
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1600 µA
15
160 µA
max
10
typ
5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=56ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
;ꢀparameter:ꢀ
I
D
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
3
25 °C
175 °C
Ciss
25°C max
175°C max
10
3
10
2
10
1
10
0
10
2
10
1
10
0
Coss
Crss
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOS
ª
5ꢀPower-Transistor,ꢀ150ꢀV
IPI076N15N5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
3
10
75 V
8
6
4
2
0
30 V
120 V
10
2
25 °C
100 °C
125 °C
10
1
10
0
10
0
10
1
10
2
10
3
0
20
40
60
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=56ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
165
160
155
150
145
140
135
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOS
ª
5ꢀPower-Transistor,ꢀ150ꢀV
IPI076N15N5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO262-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2016-03-03
OptiMOS
ª
5ꢀPower-Transistor,ꢀ150ꢀV
IPI076N15N5
RevisionꢀHistory
IPI076N15N5
Revision:ꢀ2016-03-03,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2016-03-03
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
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LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2016-03-03
