Infineon-Technologies-IPI50R350CP
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IPI50R350CP
CoolMOS
TM
Power Transistor
Features
Product Summary
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Type
Package
Marking
BIB.)K,.)<I
I@&MH+/+
.K,.)I
Maximum ratings,
6H
T
[
ꢄ
ꢅ
ꢆ
X
ꢃ
ICA:
GG
DH=:
FK>G:
GE:
8>;>:
9
Value
*)
Parameter
Symbol Conditions
Unit
I
=
T
<
ꢄ
ꢅ
ꢆ
X
DCH>CIDIG
9F6>C
8IFF:
CH
9
T
<
ꢄ
ꢇ
ꢈ
ꢈ
X
/
-IAG:
9
9F6>C
8IFF:
CH
+#
++
I
=%ae]cV
E
9L
T
<
ꢄ
ꢅ
ꢆ
X
I
=
ꢄ
ꢊ
ꢋꢌ
ꢉ
ꢃ
V
==
ꢄ
ꢆ
ꢈ
3
I
=
ꢄ
ꢊ
ꢋꢌ
ꢉ
ꢃ
V
==
ꢄ
ꢆ
ꢈ
3
ꢉ
J6A6C8=:
:
C:
F<Mꢃ
G>C<A:
EIAG:
ꢉ
J6A6C8=:
:
C:
F<Mꢃ
F:
E:
H>H>J:
t
9K
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E
9K
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I
9K
9
ꢉ
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F:
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H>H>J:
t
9K
*
,
0#
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1
9
v
(U
t
FI<<:
9C:
GG
$
6H:
GDIF8:
JDAH6<:
V
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3
.)
9
v
(U
t
V
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O
u+)
u,)
12
cdRdZT
ꢉ
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%
Nꢐ
T
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ꢄ
ꢅ
ꢆ
X
P
d`d
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F
9>GG>E6H>DC
P
T
[
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T
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ꢇ
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ꢈ
IPI50R350CP
Maximum ratings,
6H
T
[
ꢄ
ꢅ
ꢆ
X
ꢃ
ICA:
GG
DH=:
FK>G:
GE:
8>;>:
9
Value
.’/
Parameter
Symbol Conditions
Unit
I
L
DCH>CIDIG
9>D9:
;DFK6F9
8IFF:
CH
!>D9:
EIAG:
8IFF:
CH
+#
/
:
J:
FG:
9>D9:
9
v
(U
t
-#
9
T
<
ꢄ
ꢅ
ꢆ
X
I
L%ae]cV
++
U
v
(U
t
*.
O(_c
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R
dYC<
1=:
FB
6A
F:
G>GH6C8:
ꢃ
?IC8H>DC
ꢁ
86G:
&
&
&
&
*’-
/+
D(P
1=:
FB
6A
F:
G>GH6C8:
ꢃ
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ꢁ
R
dYC9
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R^SZV_d
0DA9:
F>C<
H:
B
E:
F6HIF:
ꢃ
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ꢋꢑ
B
B
ꢎꢈ
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ꢇ
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G
T
c`]U
&
&
+/) t<
K6J:
GDA9:
F>C<
DCAM
6AADK:
9
6H
A:
69G
Electrical characteristics,
6H
T
[
ꢄ
ꢅ
ꢆ
X
ꢃ
ICA:
GG
DH=:
FK>G:
GE:
8>;>:
9
Static characteristics
V
“;K#=LL
V
V
@L
ꢄ
ꢈ
3
ꢃ
I
=
ꢄ
ꢅ
ꢆ
ꢈ
Z
ꢉ
=L
6
V
@L
ꢃ
I
=
ꢄ
ꢈ
ꢋꢊ
ꢌ
B
ꢉ
!F6>CꢁGDIF8:
7F:
6@9DKC
JDAH6<:
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6H:
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O
V
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,
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V
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3
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V
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3
ꢃ
I
=LL
5:
FD
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JDAH6<:
9F6>C
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CH
&
&
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&
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T
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V
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3
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&
&
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&
T
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X
I
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V
V
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3
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V
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3
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ꢇ
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3
ꢃ
I
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T
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&
T
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R
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IPI50R350CP
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C
Zcc
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86E68>H6C8:
,
IHEIH
86E68>H6C8:
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V
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3
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3
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f
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3
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3
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V
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3
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3
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V
V
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3
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=
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3
Q
X
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Reverse Diode
O
O
V
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3
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I
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t
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3
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Q
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5
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C
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86E68>H6C8:
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6
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C
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IPI50R350CP
1 Power dissipation
2 Safe operating area
I
=
6W”
V
=L
ꢐꢂ
T
<
ꢄ
ꢅ
ꢆ
X
ꢂ
D
6)
E6F6B
:
H:
Fꢕ
t
a
P
d`d
6W”
T
<
#
10
2
100
A>B
>H:
9
7M
DCꢁGH6H:
ꢇ
Z
G
bVcZcdR_TV
80
60
40
20
0
ꢇ
ꢈ
Z
G
10
1
10
0
10
-1
ꢇ
ꢈ
ꢈ
Z
G
ꢇ
B
G
ꢇ
ꢈ
B
G
=<
10
0
10
1
10
2
10
3
0
25
50
75
100
125
150
175
V
DS
[V]
T
C
[°C]
3 Max. transient thermal impedance
Q
“dYC<#
6W”d
a
ꢐꢂ
4 Typ. output characteristics
I
=
6W”
V
=L
ꢐꢂ
T
[
ꢄ
ꢅ
ꢆ
X
E6F6B
:
H:
Fꢕ
D=t
a
(
T
E6F6B
:
H:
Fꢕ
V
@L
10
1
30
ꢅ
ꢈ
3
25
ꢇ
ꢈ
3
10
0
ꢒ
3
20
)’.
ꢌ
3
)’+
ꢑ
3
15
)’*
)’).
10
-1
10
5
)’)+
ꢆ
ꢋꢆ
3
)’)*
ꢆ
3
G>C<A:
EIAG:
ꢍ
ꢋꢆ
3
10
-2
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0
5
10
15
20
t
p
[s]
V
DS
[V]
/
:
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ꢋꢈ
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ꢅ
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IPI50R350CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
=L”`_#
6W”
I
=
ꢐꢂ
T
[
ꢄ
ꢇ
ꢆ
ꢈ
X
I
=
6W”
V
=L
ꢐꢂ
T
[
ꢄ
ꢇ
ꢆ
ꢈ
X
E6F6B
:
H:
Fꢕ
V
@L
20
R
E6F6B
:
H:
Fꢕ
V
@L
4.5
ꢅ
ꢈ
3
4
3.5
3
ꢇ
ꢈ
3
15
ꢇ
ꢈ
3
ꢌ
3
ꢒ
3
ꢌ
3
ꢑ
ꢋꢆ
3
ꢑ
3
ꢆ
ꢋꢆ
3
10
2.5
2
ꢑ
3
ꢆ
3
5
0
ꢆ
ꢋꢆ
3
ꢍ
ꢋꢆ
3
1.5
1
0
0
5
10
15
20
25
5
10
15
20
25
V
DS
[V]
I
D
[A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I
=
6W”
V
@L
ꢐꢂ
O
V
=L
k7+k
I
=
k
R
=L”`_#^Rh
E6F6B
:
H:
Fꢕ
T
[
R
=L”`_#
6W”
T
[
ꢐꢂ
I
=
ꢄ
ꢆ
ꢋꢑ
ꢉ
ꢂ
V
@L
ꢄ
ꢇ
ꢈ
3
0.9
0.8
0.7
0.6
35
30
25
20
15
10
5
ꢅ
ꢆ
X
ꢔ
ꢒ
ꢓ
0.5
ꢇ
ꢆ
ꢈ
X
dia
0.4
0.3
0.2
0.1
0
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
T
j
[°C]
V
GS
[V]
/
:
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ꢅ
ꢋꢈ
E6<:
ꢆ
ꢅ
ꢈ
ꢈ
ꢌ
ꢁꢇ
ꢇ
ꢁꢅ
ꢈ
IPI50R350CP
9 Typ. gate charge
@L
6W”
Q
XRdV
ꢐꢂ
I
=
ꢄ
ꢆ
ꢋꢑ
ꢉ
EIAG:
9
10 Forward characteristics of reverse diode
I
?
6W”
V
L=
V
#
E6F6B
:
H:
Fꢕ
V
==
E6F6B
:
H:
Fꢕ
T
[
10
2
10
ꢅ
ꢆ
X
ꢃ
ꢔ
ꢒ
ꢓ
8
6
4
2
ꢇ
ꢈ
ꢈ
3
ꢇ
ꢆ
ꢈ
X
ꢃ
ꢔ
ꢒ
ꢓ
10
1
ꢇ
ꢆ
ꢈ
X
ꢅ
ꢆ
X
ꢍ
ꢈ
ꢈ
3
10
0
10
-1
0
0
0
0.5
1
1.5
2
5
10
Q
gate
[nC]
15
20
V
SD
[V]
11 Avalanche energy
9L
6W”
T
[
ꢐꢂ
I
=
ꢄ
ꢊ
ꢋꢌ
ꢉ
ꢂ
V
==
ꢄ
ꢆ
ꢈ
3
12 Drain-source breakdown voltage
E
V
;K”=LL#
6W”
T
[
ꢐꢂ
I
=
ꢄ
ꢈ
ꢋꢅ
ꢆ
B
ꢉ
580
560
540
520
500
480
460
440
250
200
150
100
50
0
-60
-20
20
60
100
140
180
25
75
125
175
T
j
[°C]
T
j
[°C]
/
:
Jꢋ
ꢅ
ꢋꢈ
E6<:
ꢑ
ꢅ
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IPI50R350CP
13 Typ. capacitances
14 Typ. Coss stored energy
C
6W”
V
=L
ꢐꢂ
V
@L
ꢄ
ꢈ
3
ꢂ
f
ꢄ
ꢇ
*
%
N
E
`cc
=
W
(V
=L
)
10
4
5
4
3
2
1
<Zcc
10
3
10
2
<`cc
10
1
<bcc
10
0
0
0
0
100
200
300
400
500
100
200
300
400
500
V
DS
[V]
V
DS
[V]
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IPI50R350CP
Definition of diode switching characteristics
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IPI50R350CP
PG-TO262-3-1: Outline
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IPI50R350CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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